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IRF510 MOSFET (IC) Datasheet. Cross Reference Search. IRF510 Equivalent

Type Designator: IRF510

Type of IRF510 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 20

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5.6

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF510 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.54

Package: TO220AB

IRF510 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF510 PDF doc:

1.1. irf510.pdf Size:151K _fairchild_semi

IRF510
IRF510

1.2. irf510a.pdf Size:252K _fairchild_semi

IRF510
IRF510

IRF510A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS(on) = 0.4 ? n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 5.6 A n Improved Gate Charge n Extended Safe Operating Area TO-220 n 175C Operating Temperature n Lower Leakage Current : 10 ?A (Max.) @ VDS = 100V n Lower RDS(ON) : 0.289 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absol

1.3. irf510pbf.pdf Size:239K _international_rectifier

IRF510
IRF510

PD - 95364 IRF510PbF Lead-Free 6/10/04 Document Number: 91015 www.vishay.com 1 IRF510PbF Document Number: 91015 www.vishay.com 2 IRF510PbF Document Number: 91015 www.vishay.com 3 IRF510PbF Document Number: 91015 www.vishay.com 4 IRF510PbF Document Number: 91015 www.vishay.com 5 IRF510PbF Document Number: 91015 www.vishay.com 6 IRF510PbF TO-220AB Package Outline Dimen

1.4. irf510s.pdf Size:325K _international_rectifier

IRF510
IRF510

PD - 95540 IRF510SPbF Lead-Free SMD-220 7/21/04 Document Number: 91016 www.vishay.com 1 IRF510SPbF Document Number: 91016 www.vishay.com 2 IRF510SPbF Document Number: 91016 www.vishay.com 3 IRF510SPbF Document Number: 91016 www.vishay.com 4 IRF510SPbF Document Number: 91016 www.vishay.com 5 IRF510SPbF Document Number: 91016 www.vishay.com 6 IRF510SPbF Peak Diode Reco

1.5. irf510.pdf Size:175K _international_rectifier

IRF510
IRF510

1.6. irf510a.pdf Size:937K _samsung

IRF510
IRF510

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.289 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

See also transistors datasheet: IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , IRF4905 , IRF4905L , IRF4905S , FDS4435 , IRF510A , IRF510S , IRF511 , IRF512 , IRF513 , IRF520 , IRF520A , IRF520FI .

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