All MOSFET. IRF510 Datasheet

 

IRF510 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF510

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 8.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.54 Ohm

Package: TO220AB

IRF510 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF510 Datasheet (PDF)

0.1. irf510.pdf Size:151K _fairchild_semi

IRF510
IRF510

0.2. irf510a.pdf Size:252K _fairchild_semi

IRF510
IRF510

IRF510AAdvanced Power MOSFETFEATURESBVDSS = 100 Vn Avalanche Rugged TechnologyRDS(on) = 0.4 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = 5.6 An Improved Gate Chargen Extended Safe Operating AreaTO-220n 175C Operating Temperaturen Lower Leakage Current : 10 A (Max.) @ VDS = 100Vn Lower RDS(ON) : 0.289 (Typ.)1231.Gate 2. Drain 3. Sour

 0.3. irf510pbf.pdf Size:239K _international_rectifier

IRF510
IRF510

PD - 95364IRF510PbF Lead-Free6/10/04Document Number: 91015 www.vishay.com1IRF510PbFDocument Number: 91015 www.vishay.com2IRF510PbFDocument Number: 91015 www.vishay.com3IRF510PbFDocument Number: 91015 www.vishay.com4IRF510PbFDocument Number: 91015 www.vishay.com5IRF510PbFDocument Number: 91015 www.vishay.com6IRF510PbFTO-220AB Package Outline

0.4. irf510s.pdf Size:325K _international_rectifier

IRF510
IRF510

PD - 95540IRF510SPbF Lead-FreeSMD-2207/21/04Document Number: 91016 www.vishay.com1IRF510SPbFDocument Number: 91016 www.vishay.com2IRF510SPbFDocument Number: 91016 www.vishay.com3IRF510SPbFDocument Number: 91016 www.vishay.com4IRF510SPbFDocument Number: 91016 www.vishay.com5IRF510SPbFDocument Number: 91016 www.vishay.com6IRF510SPbFPeak Diode

 0.5. irf510.pdf Size:175K _international_rectifier

IRF510
IRF510

0.6. irf510a.pdf Size:937K _samsung

IRF510
IRF510

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.6 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximu

0.7. irf510pbf sihf510.pdf Size:201K _vishay

IRF510
IRF510

IRF510, SiHF510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 8.3 Fast SwitchingQgs (nC) 2.3 Ease of ParallelingQgd (nC) 3.8 Simple Drive RequirementsConfiguration Single Compli

0.8. irf510strlpbf irf510strrpbf sihf510s.pdf Size:196K _vishay

IRF510
IRF510

IRF510S, SiHF510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 8.3 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.3 175 C Operating TemperatureQgd (nC) 3.8 Fast Switching Ea

0.9. irf510 sihf510.pdf Size:151K _infineon

IRF510
IRF510

IRF510, SiHF510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 8.3 Fast SwitchingQgs (nC) 2.3 Ease of ParallelingQgd (nC) 3.8 Simple Drive RequirementsConfiguration Single Compli

Datasheet: IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , IRF4905 , IRF4905L , IRF4905S , FDS4435 , IRF510A , IRF510S , IRF511 , IRF512 , IRF513 , IRF520 , IRF520A , IRF520FI .

 

 
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