IRF510 Todos los transistores

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IRF510 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF510

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 20 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 4 V

Corriente continua de drenaje (Id): 5.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.54 Ohm

Empaquetado / Estuche: TO220AB

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IRF510 Datasheet (PDF)

1.1. irf510pbf.pdf Size:201K _upd

IRF510
IRF510

IRF510, SiHF510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 0.54 RoHS* • 175 °C Operating Temperature COMPLIANT Qg (Max.) (nC) 8.3 • Fast Switching Qgs (nC) 2.3 • Ease of Paralleling Qgd (nC) 3.8 • Simple Drive Requirements Configuration Single • Compli

1.2. irf510strlpbf irf510strrpbf.pdf Size:196K _upd

IRF510
IRF510

IRF510S, SiHF510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 • Surface Mount RDS(on) ()VGS = 10 V 0.54 • Available in Tape and Reel Qg (Max.) (nC) 8.3 • Dynamic dV/dt Rating • Repetitive Avalanche Rated Qgs (nC) 2.3 • 175 °C Operating Temperature Qgd (nC) 3.8 • Fast Switching • Ea

 1.3. irf510.pdf Size:151K _fairchild_semi

IRF510
IRF510

1.4. irf510a.pdf Size:252K _fairchild_semi

IRF510
IRF510

IRF510A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS(on) = 0.4 ? n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 5.6 A n Improved Gate Charge n Extended Safe Operating Area TO-220 n 175C Operating Temperature n Lower Leakage Current : 10 ?A (Max.) @ VDS = 100V n Lower RDS(ON) : 0.289 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absol

 1.5. irf510pbf.pdf Size:239K _international_rectifier

IRF510
IRF510

PD - 95364 IRF510PbF Lead-Free 6/10/04 Document Number: 91015 www.vishay.com 1 IRF510PbF Document Number: 91015 www.vishay.com 2 IRF510PbF Document Number: 91015 www.vishay.com 3 IRF510PbF Document Number: 91015 www.vishay.com 4 IRF510PbF Document Number: 91015 www.vishay.com 5 IRF510PbF Document Number: 91015 www.vishay.com 6 IRF510PbF TO-220AB Package Outline Dimen

1.6. irf510s.pdf Size:325K _international_rectifier

IRF510
IRF510

PD - 95540 IRF510SPbF Lead-Free SMD-220 7/21/04 Document Number: 91016 www.vishay.com 1 IRF510SPbF Document Number: 91016 www.vishay.com 2 IRF510SPbF Document Number: 91016 www.vishay.com 3 IRF510SPbF Document Number: 91016 www.vishay.com 4 IRF510SPbF Document Number: 91016 www.vishay.com 5 IRF510SPbF Document Number: 91016 www.vishay.com 6 IRF510SPbF Peak Diode Reco

1.7. irf510.pdf Size:175K _international_rectifier

IRF510
IRF510

1.8. irf510a.pdf Size:937K _samsung

IRF510
IRF510

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.289 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

Otros transistores... IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , IRF4905 , IRF4905L , IRF4905S , FDS4435 , IRF510A , IRF510S , IRF511 , IRF512 , IRF513 , IRF520 , IRF520A , IRF520FI .

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