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FTK7N65DD MOSFET (IC) Datasheet. Cross Reference Search. FTK7N65DD Equivalent

Type Designator: FTK7N65DD

Type of FTK7N65DD transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 142

Maximum drain-source voltage |Uds|, V: 650

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 7

Maximum junction temperature (Tj), ┬░C: 150

Rise Time of FTK7N65DD transistor (tr), nS: 60

Drain-source Capacitance (Cd), pF: 105

Maximum drain-source on-state resistance (Rds), Ohm: 1.4

Package: TO263

FTK7N65DD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FTK7N65DD PDF doc:

3.1. ftk7n65p_f_dd.pdf Size:578K _first_silicon

FTK7N65DD
FTK7N65DD

´╗┐SEMICONDUCTOR FTK7N65P/F/DD TECHNICAL DATA 7.0 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P : Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse

4.1. ftk7n60p_f_dd.pdf Size:247K _first_silicon

FTK7N65DD
FTK7N65DD

´╗┐SEMICONDUCTOR FTK7N60P / F / DD TECHNICAL DATA Power MOSFET 7.0 Amps, 600 Volts N-CHANNEL MOSFET P : 1 DESCRIPTION TO-220 The FTK 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed F : s

See also transistors datasheet: FTK840P , FTK840F , FTK84D , FTK7N60DD , FTK7N60F , FTK7N60P , FTK7N65P , FTK7N65F , FDS4435 , FTK75N75 , FTK10N65DD , FTK10N65F , FTK10N65P , FTK123 , FTK630P , FTK630F , FTK7000 .

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