FTK7N65DD MOSFET. Datasheet pdf. Equivalent
Type Designator: FTK7N65DD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 142 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 105 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO263
FTK7N65DD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTK7N65DD PDF doc:
3.1. ftk7n65p_f_dd.pdf 
Size:578K _first_silicon
SEMICONDUCTOR FTK7N65P/F/DD TECHNICAL DATA 7.0 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P : Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse
4.1. ftk7n60p_f_dd.pdf Size:247K _first_silicon
SEMICONDUCTOR FTK7N60P / F / DD TECHNICAL DATA Power MOSFET 7.0 Amps, 600 Volts N-CHANNEL MOSFET P : 1 DESCRIPTION TO-220 The FTK 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed F : s
Datasheet: FTK840P , FTK840F , FTK84D , FTK7N60DD , FTK7N60F , FTK7N60P , FTK7N65P , FTK7N65F , FDS4435 , FTK75N75 , FTK10N65DD , FTK10N65F , FTK10N65P , FTK123 , FTK630P , FTK630F , FTK7000 .
