All MOSFET. FTK7N65DD Datasheet

 

FTK7N65DD Datasheet and Replacement


   Type Designator: FTK7N65DD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO263
 

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FTK7N65DD Datasheet (PDF)

 7.1. Size:578K  first silicon
 ftk7n65p f dd.pdf pdf_icon

FTK7N65DD

SEMICONDUCTORFTK7N65P/F/DDTECHNICAL DATA7.0 Amps, 650 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pulse

 8.1. Size:247K  first silicon
 ftk7n60p f dd.pdf pdf_icon

FTK7N65DD

SEMICONDUCTORFTK7N60P / F / DDTECHNICAL DATAPower MOSFET7.0 Amps, 600 VoltsN-CHANNEL MOSFET P :1DESCRIPTIONTO-220The FTK 7N60 is a high voltage MOSFET and is designed tohave better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanchecharacteristics. This power MOSFET is usually used at high speedF :s

Datasheet: FTK840P , FTK840F , FTK84D , FTK7N60DD , FTK7N60F , FTK7N60P , FTK7N65P , FTK7N65F , IRF9640 , FTK75N75 , FTK10N65DD , FTK10N65F , FTK10N65P , FTK123 , FTK630P , FTK630F , FTK7000 .

History: SQJA60EP

Keywords - FTK7N65DD MOSFET datasheet

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