MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF9540
  IRF9540
  IRF9540
 
IRF9540
  IRF9540
  IRF9540
 
IRF9540
  IRF9540
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP09N20H-HF
AP09N20J-HF ..AP2732GK
AP2761I-A ..AP4513GH-A
AP4513GM-HF ..AP85U03GH-HF
AP85U03GM-HF ..AP95T08GP
AP95T10AGI-HF ..APT1003R5BN
APT1003R5CN ..AUIRF1324S
AUIRF1324S-7P ..AUIRL1404Z
AUIRL1404ZL ..BFL4001
BFL4004 ..BLS6G2731S-120
BLS6G2731S-130 ..BSO303PH
BSO303SPH ..BUK545-100A
BUK545-100B ..BUK7908-40AIE
BUK7909-75AIE ..BUP67
BUP68 ..CEB84A4
CEB85A3 ..CEM6188
CEM6426 ..CEU4204
CEU4269 ..DMN5L06DWK
DMN5L06K ..FCH76N60NF
FCI25N60N_F102 ..FDC638APZ
FDC638P ..FDH3632
FDH3632 ..FDMS7672
FDMS7672 ..FDPF12N60NZ
FDPF13N50FT ..FDS8870
FDS8870 ..FQA40N25
FQA44N30 ..FQP3N80C
FQP3P20 ..FRK260H
FRK260R ..FW274
FW282 ..H7P1002DS
H7P1006MD90TZ ..HAT2266H
HAT2267H ..HUF76443P3
HUF76443S3S ..IPB60R099CP
IPB60R099CPA ..IPG20N04S4-09
IPG20N04S4-12 ..IPP180N10N3G
IPP200N15N3G ..IRC830-008
IRC8305 ..IRF530FI
IRF530N ..IRF7241
IRF730 ..IRF820AL
IRF820AS ..IRFB59N10D
IRFB61N15D ..IRFI9540N
IRFI9620G ..IRFP470
IRFP4710 ..IRFS352
IRFS353 ..IRFU024N
IRFU025 ..IRL2203N
IRL2203NL ..IRLR120N
IRLR130A ..IXFB62N80Q3
IXFB70N60Q2 ..IXFK100N25
IXFK102N30P ..IXFN32N100Q3
IXFN32N120 ..IXFT26N50Q
IXFT26N60P ..IXKP13N60C5M
IXKP20N60C5 ..IXTH140P05T
IXTH14N100 ..IXTM15N60
IXTM20N60 ..IXTQ160N075T
IXTQ160N085T ..IXTY08N100P
IXTY08N50D2 ..KHB4D0N65F2
KHB4D0N65P ..KP750B
KP750B1 ..MPF102
MPF4393 ..MTE20N10FP
MTE50N10FP ..MTNK5C3
MTNK5N3 ..NDP6051L
NDP6060 ..NTLJS3113P
NTLJS4114N ..PHB8N50E
PHB8ND50E ..PMZ760SN
PN4091 ..R6006ANX
R6008ANX ..RFT2P03L
RFT3055LE ..RJK6012DPE
RJK6013DPE ..RW1A030AP
RW1C015UN ..SE3406
SE3407 ..SIF2N65C
SIF2N65D ..SML20L100
SML20S56 ..SPA08N80C3
SPA11N60C3 ..SSE90N08-08
SSE90N10-14 ..SSM3J313T
SSM3J314T ..SSM6P25TU
SSM6P26TU ..STB25NM60ND
STB26NM60N ..STD4NK50Z-1
STD4NK50ZD ..STFI20NK50Z
STFW12N120K5 ..STP10N62K3
STP10NA40 ..STP4N150
STP4N20 ..STS5PF30L
STS6NF20V ..STY60NM50
STY60NM60 ..TK4P60DB
TK50F15J1 ..TPC8213-H
TPC8214-H ..TPCS8303
TPCT4201 ..UTT4425
UTT4815 ..ZXMN2088DE6
ZXMN20B28K ..ZXMS6006SG
 
IRF9540 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF9540 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF9540

Type of IRF9540 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 19

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF9540 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.2

Package:

Equivalent transistors for IRF9540

IRF9540 PDF doc:

1.1. irf9540s.pdf Size:321K _international_rectifier

IRF9540
IRF9540
PD - 95699 IRF9540SPbF • Lead-Free 9/10/04 Document Number: 91079 www.vishay.com 1 IRF9540SPbF Document Number: 91079 www.vishay.com 2 IRF9540SPbF Document Number: 91079 www.vishay.com 3 IRF9540SPbF Document Number: 91079 www.vishay.com 4 IRF9540SPbF Document Number: 91079 www.vishay.com 5 IRF9540SPbF Document Number: 91079 www.vishay.com 6 IRF9540SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent

1.2. irf9540n.pdf Size:125K _international_rectifier

IRF9540
IRF9540
PD - 91437B IRF9540N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175°C Operating Temperature Fast Switching RDS(on) = 0.117? P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 TO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Dr

1.3. irf9540ns.pdf Size:286K _international_rectifier

IRF9540
IRF9540
PD - 91483D IRF9540NS/L HEXFET® Power MOSFET l Advanced Process Technology D l Surface Mount (IRF9540S) VDSS = -100V l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature RDS(on) = 0.117? l Fast Switching G l P-Channel ID = -23A l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in Pak TO-262 any existing surface mount package. The D2Pak is suitable D 2 for high current applications because of its low in

1.4. irf9540.pdf Size:926K _international_rectifier

IRF9540
IRF9540
PD - 94884 IRF9540PbF • Lead-Free 12/11/03 Document Number: 91078 www.vishay.com 1 IRF9540PbF Document Number: 91078 www.vishay.com 2 IRF9540PbF Document Number: 91078 www.vishay.com 3 IRF9540PbF Document Number: 91078 www.vishay.com 4 IRF9540PbF Document Number: 91078 www.vishay.com 5 IRF9540PbF Document Number: 91078 www.vishay.com 6 IRF9540PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15

1.5. irf9540s_sihf9540s.pdf Size:172K _vishay

IRF9540
IRF9540
IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 • Surface Mount RDS(on) (?)VGS = - 10 V 0.20 • Available in Tape and Reel Qg (Max.) (nC) 61 • Dynamic dV/dt Rating • Repetitive Avalanche Rated Qgs (nC) 14 • P-Channel Qgd (nC) 29 • 175 °C Operating Temperature • Fast Switching Configuration Single • Compliant to RoHS Directive 2002/95/EC S DESCRIPTION Third generation Power MOSFETs from Vishay provide the D2PAK (TO-263) designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest D possible on-resistance in any existing surface mount G D package. The D2PAK (TO-263) is suitable for high current S P-Channel MOSFET applications because of its low

1.6. irf9540_sihf9540.pdf Size:202K _vishay

IRF9540
IRF9540
IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 100 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.20 RoHS* • P-Channel COMPLIANT Qg (Max.) (nC) 61 • 175 °C Operating Temperature Qgs (nC) 14 • Fast Switching Qgd (nC) 29 • Ease of Paralleling Configuration Single • Simple Drive Requirements S • Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION G Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D D G commercial-industrial applications at power dissipation P-Channel MOSFET levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9540PbF Lead (Pb)-f

See also transistors datasheet: IRF9530 , IRF9530N , IRF9530NL , IRF9530NL , IRF9530NS , IRF9531 , IRF9532 , IRF9533 , IRF640 , IRF9540N , IRF9540NL , IRF9540NS , IRF9541 , IRF9542 , IRF9543 , IRF9610 , IRF9610S .

Keywords

 IRF9540 Datasheet  IRF9540 Datenblatt  IRF9540 RoHS  IRF9540 Distributor
 IRF9540 Application Notes  IRF9540 Component  IRF9540 Circuit  IRF9540 Schematic
 IRF9540 Equivalent  IRF9540 Cross Reference  IRF9540 Data Sheet  IRF9540 Fiche Technique

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