MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF9540
  IRF9540
  IRF9540
 
IRF9540
  IRF9540
  IRF9540
 
IRF9540
  IRF9540
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2737
2SK2738 ..2SK3131
2SK3132 ..2SK3625
2SK363 ..2SK427
2SK429L ..3N202
3N203 ..4N70K
4N80 ..AO4627
AO4629 ..AOD2606
AOD2610 ..AON3818
AON4420L ..AOP609
AOT10N60 ..AOW15S65
AOW20C60 ..AP15T20AGH-HF
AP15T20GH-HF ..AP3989I
AP3989P ..AP4933GM-HF
AP4936GM ..AP9412BGM-HF
AP9412CGM-HF ..AP9962AGD
AP9962AGH ..APT10086BVFR
APT10086BVR ..APT50M80JLC
APT50M85B2VFR ..AUIRF7103Q
AUIRF7207Q ..BF1101R
BF1101WR ..BLF404
BLF521 ..BSC019N02KSG
BSC019N04NSG ..BSS138K
BSS138L ..BUK662R4-40C
BUK662R5-30C ..BUK9277-55A
BUK9504-40A ..BUZ64
BUZ71 ..CED4060AL
CED40N10 ..CEP08N8
CEP09N7G ..CPH6341
CPH6347 ..DMP2240UW
DMP22D6UT ..FDA28N50F
FDA33N25 ..FDD3672
FDD3672 ..FDMA7632
FDMA7632 ..FDMS9620S
FDN302P ..FDQ7236AS
FDQ7238AS ..FDS9934C
FDS9934C ..FQB44N10
FQB47P06 ..FQPF17N40
FQPF17N40 ..FRM240R
FRM244D ..H02N60I
H02N60J ..HAT1094C
HAT1095C ..HITJ0204MP
HITJ0302MP ..IPA50R399CP
IPA50R520CP ..IPB80N06S2L-07
IPB80N06S2L-09 ..IPI200N25N3G
IPI22N03S4L-15 ..IPP60R750E6
IPP60R950C6 ..IRF1324L
IRF1324S ..IRF6215
IRF6215L ..IRF7343I
IRF7343Q ..IRF8734
IRF8736 ..IRFD9120
IRFD9210 ..IRFM210A
IRFM214A ..IRFR025
IRFR1010Z ..IRFS5615
IRFS5620 ..IRFU3711Z
IRFU3806 ..IRL520
IRL520A ..IRLSL3034
IRLSL3036 ..IXFH110N15T2
IXFH110N25T ..IXFK32N100Q3
IXFK32N50Q ..IXFN73N30
IXFN73N30Q ..IXFV110N25T
IXFV110N25TS ..IXTA1N100P
IXTA1N120P ..IXTH26P20P
IXTH27N35MA ..IXTP10P50P
IXTP110N055P ..IXTQ62N15P
IXTQ64N25P ..J113
J174 ..KMB012N40DA
KMB014P30QA ..KTK598V
KTK697TV ..MTB12N04J3
MTB12P04J3 ..MTN13N50E3
MTN13N50FP ..MTP3J15N3
MTP3J15Y3 ..NDT3055
NDT3055L ..NTMFS5844NL
NTMS10P02 ..PHP2N50E
PHP2N60E ..PSMN018-80YS
PSMN020-100YS ..RD07MVS1
RD07MVS1B ..RJK0353DPA
RJK0353DSP ..RP1L055SN
RP1L080SN ..SDF044JAA-D
SDF044JAA-S ..SFR9034
SFR9110 ..SMG2329P
SMG2330N ..SML5030AN
SML5030BN ..SPD06N60C3
SPD06N80C3 ..SSG4502C
SSG4502CE ..SSM3K15AMFV
SSM3K15CT ..SSP7434N
SSP7436N ..STB7NK80Z-1
STB80N20M5 ..STD7NM80
STD7NM80-1 ..STH7NA60FI
STH7NA80 ..STP15N05L
STP15N05LFI ..STP5N95K3
STP5NA50 ..STU60N55F3
STU65N3LLH5 ..TF252TH
TF256 ..TK80S04K3L
TK80S06K3L ..TPCA8046-H
TPCA8047-H ..UP672
UP9971 ..WTC2305
WTC2305DS ..ZXMP10A16K
ZXMP10A17E6 ..ZXMS6006SG
 
IRF9540 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF9540 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF9540

Type of IRF9540 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 19

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF9540 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.2

Package: TO220AB

Equivalent transistors for IRF9540

IRF9540 PDF doc:

1.1. irf9540s.pdf Size:321K _international_rectifier

IRF9540
IRF9540
PD - 95699 IRF9540SPbF • Lead-Free 9/10/04 Document Number: 91079 www.vishay.com 1 IRF9540SPbF Document Number: 91079 www.vishay.com 2 IRF9540SPbF Document Number: 91079 www.vishay.com 3 IRF9540SPbF Document Number: 91079 www.vishay.com 4 IRF9540SPbF Document Number: 91079 www.vishay.com 5 IRF9540SPbF Document Number: 91079 www.vishay.com 6 IRF9540SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent

1.2. irf9540n.pdf Size:125K _international_rectifier

IRF9540
IRF9540
PD - 91437B IRF9540N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175°C Operating Temperature Fast Switching RDS(on) = 0.117? P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 TO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Dr

1.3. irf9540ns.pdf Size:286K _international_rectifier

IRF9540
IRF9540
PD - 91483D IRF9540NS/L HEXFET® Power MOSFET l Advanced Process Technology D l Surface Mount (IRF9540S) VDSS = -100V l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature RDS(on) = 0.117? l Fast Switching G l P-Channel ID = -23A l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in Pak TO-262 any existing surface mount package. The D2Pak is suitable D 2 for high current applications because of its low in

1.4. irf9540.pdf Size:926K _international_rectifier

IRF9540
IRF9540
PD - 94884 IRF9540PbF • Lead-Free 12/11/03 Document Number: 91078 www.vishay.com 1 IRF9540PbF Document Number: 91078 www.vishay.com 2 IRF9540PbF Document Number: 91078 www.vishay.com 3 IRF9540PbF Document Number: 91078 www.vishay.com 4 IRF9540PbF Document Number: 91078 www.vishay.com 5 IRF9540PbF Document Number: 91078 www.vishay.com 6 IRF9540PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15

1.5. irfp9140-43_irf9540-43.pdf Size:378K _samsung

IRF9540
IRF9540


1.6. irf9540s_sihf9540s.pdf Size:172K _vishay

IRF9540
IRF9540
IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 • Surface Mount RDS(on) (?)VGS = - 10 V 0.20 • Available in Tape and Reel Qg (Max.) (nC) 61 • Dynamic dV/dt Rating • Repetitive Avalanche Rated Qgs (nC) 14 • P-Channel Qgd (nC) 29 • 175 °C Operating Temperature • Fast Switching Configuration Single • Compliant to RoHS Directive 2002/95/EC S DESCRIPTION Third generation Power MOSFETs from Vishay provide the D2PAK (TO-263) designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest D possible on-resistance in any existing surface mount G D package. The D2PAK (TO-263) is suitable for high current S P-Channel MOSFET applications because of its low

1.7. irf9540_sihf9540.pdf Size:202K _vishay

IRF9540
IRF9540
IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 100 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.20 RoHS* • P-Channel COMPLIANT Qg (Max.) (nC) 61 • 175 °C Operating Temperature Qgs (nC) 14 • Fast Switching Qgd (nC) 29 • Ease of Paralleling Configuration Single • Simple Drive Requirements S • Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION G Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D D G commercial-industrial applications at power dissipation P-Channel MOSFET levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9540PbF Lead (Pb)-f

See also transistors datasheet: IRF9530 , IRF9530N , APT5015BLC , IRF9530NL , IRF9530NS , IRF9531 , IRF9532 , IRF9533 , IRF640 , IRF9540N , IRF9540NL , IRF9540NS , IRF9541 , IRF9542 , IRF9543 , IRF9610 , IRF9610S .

Keywords

 IRF9540 Datasheet  IRF9540 Datenblatt  IRF9540 RoHS  IRF9540 Distributor
 IRF9540 Application Notes  IRF9540 Component  IRF9540 Circuit  IRF9540 Schematic
 IRF9540 Equivalent  IRF9540 Cross Reference  IRF9540 Data Sheet  IRF9540 Fiche Technique

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