MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF9540
  IRF9540
  IRF9540
 
IRF9540
  IRF9540
  IRF9540
 
IRF9540
  IRF9540
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AP02N40K-HF
AP02N40P ..AP2306GN-HF
AP2307GN-HF ..AP4411GM
AP4412GM ..AP6683GYT-HF
AP6800GEO ..AP94T07GP-HF
AP94T07GP1-HF ..AP9976GM
AP9976GP ..APT50M60JN
APT50M85JVFR ..AUIRFP4668
AUIRFP4768 ..BF556C
BF805 ..BLF6G27LS-75
BLF6G27S-45 ..BSC120N03MSG
BSC123N08NS3G ..BSZ12DN20NS3G
BSZ130N03LSG ..BUK7520-55A
BUK7523-75A ..BUK9616-75B
BUK9618-30 ..CEB01N65
CEB01N6G ..CEF740G
CEF80N15 ..CEP85N75
CEP85N75V ..DMG9926UDM
DMG9926USD ..EKV550
EMH1303 ..FDB6030L
FDB6035AL ..FDD8444L_F085
FDD8444_F085 ..FDMC8622
FDMC86240 ..FDP18N20F
FDP18N50 ..FDS6375
FDS6570A ..FK14UM-10
FK14UM-9 ..FQD5N60C
FQD5P10 ..FQT1N60C
FQT1N80 ..FRX130H4
FRX130R1 ..H5N2509PF
H5N2510DL ..HAT2105T
HAT2108R ..HUF75343G3
HUF75343P3 ..IPB048N06LG
IPB049N06L3G ..IPD30N06S2-15
IPD30N06S2-23 ..IPI90R340C3
IPI90R500C3 ..IPU075N03LG
IPU090N03LG ..IRF3315L
IRF3315S ..IRF6629
IRF6631 ..IRF7507
IRF7507(N) ..IRF9643
IRF9910 ..IRFH5306
IRFH5406 ..IRFP240FI
IRFP241 ..IRFR5305
IRFR540Z ..IRFS9233
IRFS9240 ..IRFY130C
IRFY140 ..IRLHS6342
IRLHS6376 ..IRLZ14A
IRLZ20 ..IXFH26N50
IXFH26N50P ..IXFL38N100Q2
IXFL39N90 ..IXFR20N120P
IXFR20N80P ..IXFX220N15P
IXFX220N17T2 ..IXTA6N50D2
IXTA6N50P ..IXTH67N10
IXTH67N10MA ..IXTP2R4N50P
IXTP300N04T2 ..IXTT60N20L2
IXTT64N25P ..KF3N50IZ
KF3N60D ..KP501A
KP501B ..MCH6342
MCH6344 ..MTBA5C10Q8
MTBA5N10FP ..MTN3484J3
MTN3484V8 ..NDB6020
NDB6020P ..NTD4906N
NTD4909N ..NUD4700
NUS3116MT ..PMBF4416A
PMBF5484 ..PSMN3R3-40YS
PSMN3R4-30PL ..RFD16N05L
RFD16N05LSM ..RJK0852DPB
RJK0853DPB ..RRQ030P03
RRQ045P03 ..SDF250JAB
SDF26N50 ..SGM3055
SGS100MA010D1 ..SMK1260WF
SMK1265F ..SML60H20
SML60J35 ..SPP18P06PH
SPP20N60C3 ..SSH4N70
SSH4N70A ..SSM6J25FE
SSM6J26FE ..SST4117
SST4118 ..STD17N05L
STD17N05L-1 ..STF11NM60ND
STF11NM80 ..STK2N80
STK2NA60 ..STP23NM60ND
STP24NF10 ..STP7NK30Z
STP7NK40Z ..STW15NK90Z
STW15NM60ND ..TK14A55D
TK150F04K3 ..TPC8030
TPC8031-H ..TPCC8102
TPCC8103 ..UT4812
UT4812Z ..ZVN4310G
ZVN4424A ..ZXMS6006SG
 
IRF9540 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF9540 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF9540

Type of IRF9540 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 19

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF9540 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.2

Package:

Equivalent transistors for IRF9540

IRF9540 PDF doc:

1.1. irf9540s.pdf Size:321K _international_rectifier

IRF9540
IRF9540
PD - 95699 IRF9540SPbF • Lead-Free 9/10/04 Document Number: 91079 www.vishay.com 1 IRF9540SPbF Document Number: 91079 www.vishay.com 2 IRF9540SPbF Document Number: 91079 www.vishay.com 3 IRF9540SPbF Document Number: 91079 www.vishay.com 4 IRF9540SPbF Document Number: 91079 www.vishay.com 5 IRF9540SPbF Document Number: 91079 www.vishay.com 6 IRF9540SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent

1.2. irf9540n.pdf Size:125K _international_rectifier

IRF9540
IRF9540
PD - 91437B IRF9540N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175°C Operating Temperature Fast Switching RDS(on) = 0.117? P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 TO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Dr

1.3. irf9540ns.pdf Size:286K _international_rectifier

IRF9540
IRF9540
PD - 91483D IRF9540NS/L HEXFET® Power MOSFET l Advanced Process Technology D l Surface Mount (IRF9540S) VDSS = -100V l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature RDS(on) = 0.117? l Fast Switching G l P-Channel ID = -23A l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in Pak TO-262 any existing surface mount package. The D2Pak is suitable D 2 for high current applications because of its low in

1.4. irf9540.pdf Size:926K _international_rectifier

IRF9540
IRF9540
PD - 94884 IRF9540PbF • Lead-Free 12/11/03 Document Number: 91078 www.vishay.com 1 IRF9540PbF Document Number: 91078 www.vishay.com 2 IRF9540PbF Document Number: 91078 www.vishay.com 3 IRF9540PbF Document Number: 91078 www.vishay.com 4 IRF9540PbF Document Number: 91078 www.vishay.com 5 IRF9540PbF Document Number: 91078 www.vishay.com 6 IRF9540PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15

1.5. irf9540s_sihf9540s.pdf Size:172K _vishay

IRF9540
IRF9540
IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 • Surface Mount RDS(on) (?)VGS = - 10 V 0.20 • Available in Tape and Reel Qg (Max.) (nC) 61 • Dynamic dV/dt Rating • Repetitive Avalanche Rated Qgs (nC) 14 • P-Channel Qgd (nC) 29 • 175 °C Operating Temperature • Fast Switching Configuration Single • Compliant to RoHS Directive 2002/95/EC S DESCRIPTION Third generation Power MOSFETs from Vishay provide the D2PAK (TO-263) designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest D possible on-resistance in any existing surface mount G D package. The D2PAK (TO-263) is suitable for high current S P-Channel MOSFET applications because of its low

1.6. irf9540_sihf9540.pdf Size:202K _vishay

IRF9540
IRF9540
IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 100 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.20 RoHS* • P-Channel COMPLIANT Qg (Max.) (nC) 61 • 175 °C Operating Temperature Qgs (nC) 14 • Fast Switching Qgd (nC) 29 • Ease of Paralleling Configuration Single • Simple Drive Requirements S • Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION G Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D D G commercial-industrial applications at power dissipation P-Channel MOSFET levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9540PbF Lead (Pb)-f

See also transistors datasheet: IRF9530 , IRF9530N , IRF9530NL , IRF9530NL , IRF9530NS , IRF9531 , IRF9532 , IRF9533 , IRF640 , IRF9540N , IRF9540NL , IRF9540NS , IRF9541 , IRF9542 , IRF9543 , IRF9610 , IRF9610S .

Keywords

 IRF9540 Datasheet  IRF9540 Datenblatt  IRF9540 RoHS  IRF9540 Distributor
 IRF9540 Application Notes  IRF9540 Component  IRF9540 Circuit  IRF9540 Schematic
 IRF9540 Equivalent  IRF9540 Cross Reference  IRF9540 Data Sheet  IRF9540 Fiche Technique

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