IRF9540 PDF and Equivalents Search

PD - 94884 IRF9540PbF Lead-Free 12/11/03 Document Number 91078 www.vishay.com 1 IRF9540PbF Document Number 91078 www.vishay.com 2 IRF9540PbF Document Number 91078 www.vishay.com 3 IRF9540PbF Document Number 91078 www.vishay.com 4 IRF9540PbF Document Number 91078 www.vishay.com 5 IRF9540PbF Document Number 91078 www.vishay.com 6 IRF9540PbF TO-220AB Package O... See More ⇒

IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power Features MOSFETs 19A, 100V These are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200 field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava... See More ⇒

IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.20 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 61 175 C Operating Temperature Qgs (nC) 14 Fast Switching Qgd (nC) 29 Ease of Paralleling Configuration Single Simple Drive Requir... See More ⇒

IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.20 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 61 175 C Operating Temperature Qgs (nC) 14 Fast Switching Qgd (nC) 29 Ease of Paralleling Configuration Single Simple Drive Requir... See More ⇒

WWW.ALLDATASHEET.COM Copyright Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from www.AllDataSheet.com 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com ... See More ⇒

IRF9540 P-Channel MOSFET Description This P-Channel MOSFET uses advanced trench technology and design to provide excellent R with low gate charge. DS(on) It can be used in a wide variety of applications. Features 1) V =-100V,I =-20A,R ... See More ⇒

PD - 94790A IRF9540NPbF Lead-Free www.irf.com 1 01/23/04 IRF9540NPbF 2 www.irf.com IRF9540NPbF www.irf.com 3 IRF9540NPbF 4 www.irf.com IRF9540NPbF www.irf.com 5 IRF9540NPbF 6 www.irf.com IRF9540NPbF www.irf.com 7 IRF9540NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) ... See More ⇒

PD - 97626 AUTOMOTIVE GRADE AUIRF9540N Features l Advanced Planar Technology D l Dynamic dV/dT Rating V(BR)DSS -100V l 175 C Operating Temperature l Fast Switching RDS(on) max. 0.117 G l Fully Avalanche Rated l Repetitive Avalanche Allowed ID -23A S up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description S Specifically designed for Automotive ap... See More ⇒

PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150 C Operating Temperature l Fast Switching RDS(on) = 117m l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF9540NS/L ID = -23A S l P-Channel l Lead-Free D Description D Features of this design are a 150... See More ⇒

PD - 95699 IRF9540SPbF Lead-Free 9/10/04 Document Number 91079 www.vishay.com 1 IRF9540SPbF Document Number 91079 www.vishay.com 2 IRF9540SPbF Document Number 91079 www.vishay.com 3 IRF9540SPbF Document Number 91079 www.vishay.com 4 IRF9540SPbF Document Number 91079 www.vishay.com 5 IRF9540SPbF Document Number 91079 www.vishay.com 6 IRF9540SPbF Peak Diode R... See More ⇒

PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150 C Operating Temperature l Fast Switching RDS(on) = 117m l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF9540NS/L ID = -23A S l P-Channel l Lead-Free D Description D Features of this design are a 150... See More ⇒

PD - 91437B IRF9540N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature Fast Switching RDS(on) = 0.117 P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a... See More ⇒

PD - 91483D IRF9540NS/L HEXFET Power MOSFET l Advanced Process Technology D l Surface Mount (IRF9540S) VDSS = -100V l Low-profile through-hole (IRF9540L) l 175 C Operating Temperature RDS(on) = 0.117 l Fast Switching G l P-Channel ID = -23A l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques t... See More ⇒

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IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 0.20 Available in Tape and Reel Qg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 14 P-Channel Qgd (nC) 29 175 C Operating Temperature Fast... See More ⇒

IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 0.20 Available in Tape and Reel Qg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 14 P-Channel Qgd (nC) 29 175 C Operating Temperature Fast... See More ⇒

Silicon P-Channel Power MOSFET Description The IRF9540NS uses advanced technology and design to provide excellent R . It can be used in a wide variety of applications. DS(ON) General Features V =-110V, I =-35A DS D Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Schematic diagram Application Power switching application... See More ⇒

INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF9540N,IIRF9540N FEATURES Static drain-source on-resistance RDS(on) 0.117 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extr... See More ⇒