All MOSFET. IRF9540 Datasheet

 

IRF9540 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF9540

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 19 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 61(max) nC

Rise Time (tr): 73 nS

Drain-Source Capacitance (Cd): 590 pF

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

Package: TO220AB

IRF9540 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9540 Datasheet (PDF)

..1. irf9540.pdf Size:926K _international_rectifier

IRF9540
IRF9540

PD - 94884IRF9540PbF Lead-Free12/11/03Document Number: 91078 www.vishay.com1IRF9540PbFDocument Number: 91078 www.vishay.com2IRF9540PbFDocument Number: 91078 www.vishay.com3IRF9540PbFDocument Number: 91078 www.vishay.com4IRF9540PbFDocument Number: 91078 www.vishay.com5IRF9540PbFDocument Number: 91078 www.vishay.com6IRF9540PbFTO-220AB Package O

..2. irf9540 rf1s9540sm.pdf Size:99K _fairchild_semi

IRF9540
IRF9540

IRF9540, RF1S9540SMData Sheet January 200219A, 100V, 0.200 Ohm, P-Channel Power FeaturesMOSFETs 19A, 100VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

..3. irf9540 sihf9540.pdf Size:202K _vishay

IRF9540
IRF9540

IRF9540, SiHF9540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 61 175 C Operating TemperatureQgs (nC) 14 Fast SwitchingQgd (nC) 29 Ease of ParallelingConfiguration Single Simple Drive Requir

..4. irf9540 irf9541 irf9542 irf9543.pdf Size:352K _no

IRF9540
IRF9540

WWW.ALLDATASHEET.COM Copyright Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.AllDataSheet.com100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com

0.1. irf9540n.pdf Size:125K _international_rectifier

IRF9540
IRF9540

PD - 91437BIRF9540NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.117 P-ChannelG Fully Avalanche RatedID = -23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

0.2. irf9540s.pdf Size:321K _international_rectifier

IRF9540
IRF9540

PD - 95699IRF9540SPbF Lead-Free9/10/04Document Number: 91079 www.vishay.com1IRF9540SPbFDocument Number: 91079 www.vishay.com2IRF9540SPbFDocument Number: 91079 www.vishay.com3IRF9540SPbFDocument Number: 91079 www.vishay.com4IRF9540SPbFDocument Number: 91079 www.vishay.com5IRF9540SPbFDocument Number: 91079 www.vishay.com6IRF9540SPbFPeak Diode R

 0.3. irf9540npbf.pdf Size:922K _international_rectifier

IRF9540
IRF9540

PD - 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)

0.4. irf9540nlpbf irf9540nspbf.pdf Size:326K _international_rectifier

IRF9540
IRF9540

PD - 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150

 0.5. irf9540ns.pdf Size:286K _international_rectifier

IRF9540
IRF9540

PD - 91483DIRF9540NS/LHEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRF9540S)VDSS = -100Vl Low-profile through-hole (IRF9540L)l 175C Operating TemperatureRDS(on) = 0.117l Fast SwitchingGl P-ChannelID = -23Al Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques t

0.6. irfp9140-43 irf9540-43.pdf Size:378K _samsung

IRF9540
IRF9540

0.7. irf9540pbf sihf9540.pdf Size:203K _vishay

IRF9540
IRF9540

IRF9540, SiHF9540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 61 175 C Operating TemperatureQgs (nC) 14 Fast SwitchingQgd (nC) 29 Ease of ParallelingConfiguration Single Simple Drive Requir

0.8. irf9540s sihf9540s.pdf Size:172K _vishay

IRF9540
IRF9540

IRF9540S, SiHF9540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface Mount RDS(on) ()VGS = - 10 V 0.20 Available in Tape and ReelQg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 14 P-ChannelQgd (nC) 29 175 C Operating Temperature Fast

0.9. irf9540s irf9540spbf sihf9540s.pdf Size:197K _vishay

IRF9540
IRF9540

IRF9540S, SiHF9540SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface Mount RDS(on) ()VGS = - 10 V 0.20 Available in Tape and ReelQg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 14 P-ChannelQgd (nC) 29 175 C Operating Temperature Fast

0.10. irf9540npbf.pdf Size:922K _infineon

IRF9540
IRF9540

PD - 94790AIRF9540NPbF Lead-Freewww.irf.com 101/23/04IRF9540NPbF2 www.irf.comIRF9540NPbFwww.irf.com 3IRF9540NPbF4 www.irf.comIRF9540NPbFwww.irf.com 5IRF9540NPbF6 www.irf.comIRF9540NPbFwww.irf.com 7IRF9540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)

0.11. irf9540nspbf irf9540nlpbf.pdf Size:326K _infineon

IRF9540
IRF9540

PD - 96030IRF9540NSPbFIRF9540NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 117ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF9540NS/LID = -23ASl P-Channell Lead-FreeDDescriptionDFeatures of this design are a 150

0.12. irf9540n.pdf Size:273K _inchange_semiconductor

IRF9540
IRF9540

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF9540N,IIRF9540NFEATURESStatic drain-source on-resistance:RDS(on)0.117Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extr

Datasheet: IRF9530 , IRF9530N , APT5015BLC , IRF9530NL , IRF9530NS , IRF9531 , IRF9532 , IRF9533 , IRF1404 , IRF9540N , IRF9540NL , IRF9540NS , IRF9541 , IRF9542 , IRF9543 , IRF9610 , IRF9610S .

 

 
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