IRF9540 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF9540 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 19 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 73 nS
Cossⓘ - Capacitancia de salida: 590 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Encapsulados: TO220AB
📄📄 Copiar
Búsqueda de reemplazo de IRF9540 MOSFET
- Selecciónⓘ de transistores por parámetros
IRF9540 datasheet
..1. Size:926K international rectifier
irf9540.pdf 
PD - 94884 IRF9540PbF Lead-Free 12/11/03 Document Number 91078 www.vishay.com 1 IRF9540PbF Document Number 91078 www.vishay.com 2 IRF9540PbF Document Number 91078 www.vishay.com 3 IRF9540PbF Document Number 91078 www.vishay.com 4 IRF9540PbF Document Number 91078 www.vishay.com 5 IRF9540PbF Document Number 91078 www.vishay.com 6 IRF9540PbF TO-220AB Package O
..2. Size:99K fairchild semi
irf9540 rf1s9540sm.pdf
IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power Features MOSFETs 19A, 100V These are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200 field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava
..3. Size:202K vishay
irf9540 sihf9540.pdf
IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.20 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 61 175 C Operating Temperature Qgs (nC) 14 Fast Switching Qgd (nC) 29 Ease of Paralleling Configuration Single Simple Drive Requir
..4. Size:203K vishay
irf9540pbf sihf9540.pdf
IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.20 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 61 175 C Operating Temperature Qgs (nC) 14 Fast Switching Qgd (nC) 29 Ease of Paralleling Configuration Single Simple Drive Requir
..5. Size:352K no
irf9540 irf9541 irf9542 irf9543.pdf
WWW.ALLDATASHEET.COM Copyright Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from www.AllDataSheet.com 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com
..6. Size:1188K cn evvo
irf9540.pdf
IRF9540 P-Channel MOSFET Description This P-Channel MOSFET uses advanced trench technology and design to provide excellent R with low gate charge. DS(on) It can be used in a wide variety of applications. Features 1) V =-100V,I =-20A,R
0.1. Size:922K international rectifier
irf9540npbf.pdf
PD - 94790A IRF9540NPbF Lead-Free www.irf.com 1 01/23/04 IRF9540NPbF 2 www.irf.com IRF9540NPbF www.irf.com 3 IRF9540NPbF 4 www.irf.com IRF9540NPbF www.irf.com 5 IRF9540NPbF 6 www.irf.com IRF9540NPbF www.irf.com 7 IRF9540NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185)
0.2. Size:823K international rectifier
auirf9540n.pdf
PD - 97626 AUTOMOTIVE GRADE AUIRF9540N Features l Advanced Planar Technology D l Dynamic dV/dT Rating V(BR)DSS -100V l 175 C Operating Temperature l Fast Switching RDS(on) max. 0.117 G l Fully Avalanche Rated l Repetitive Avalanche Allowed ID -23A S up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description S Specifically designed for Automotive ap
0.3. Size:326K international rectifier
irf9540nspbf irf9540nlpbf.pdf
PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150 C Operating Temperature l Fast Switching RDS(on) = 117m l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF9540NS/L ID = -23A S l P-Channel l Lead-Free D Description D Features of this design are a 150
0.4. Size:321K international rectifier
irf9540s.pdf
PD - 95699 IRF9540SPbF Lead-Free 9/10/04 Document Number 91079 www.vishay.com 1 IRF9540SPbF Document Number 91079 www.vishay.com 2 IRF9540SPbF Document Number 91079 www.vishay.com 3 IRF9540SPbF Document Number 91079 www.vishay.com 4 IRF9540SPbF Document Number 91079 www.vishay.com 5 IRF9540SPbF Document Number 91079 www.vishay.com 6 IRF9540SPbF Peak Diode R
0.5. Size:326K international rectifier
irf9540nlpbf irf9540nspbf.pdf
PD - 96030 IRF9540NSPbF IRF9540NLPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150 C Operating Temperature l Fast Switching RDS(on) = 117m l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF9540NS/L ID = -23A S l P-Channel l Lead-Free D Description D Features of this design are a 150
0.6. Size:125K international rectifier
irf9540n.pdf
PD - 91437B IRF9540N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature Fast Switching RDS(on) = 0.117 P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a
0.7. Size:286K international rectifier
irf9540ns.pdf
PD - 91483D IRF9540NS/L HEXFET Power MOSFET l Advanced Process Technology D l Surface Mount (IRF9540S) VDSS = -100V l Low-profile through-hole (IRF9540L) l 175 C Operating Temperature RDS(on) = 0.117 l Fast Switching G l P-Channel ID = -23A l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques t
0.9. Size:197K vishay
irf9540s irf9540spbf sihf9540s.pdf
IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 0.20 Available in Tape and Reel Qg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 14 P-Channel Qgd (nC) 29 175 C Operating Temperature Fast
0.10. Size:172K vishay
irf9540s sihf9540s.pdf
IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 0.20 Available in Tape and Reel Qg (Max.) (nC) 61 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 14 P-Channel Qgd (nC) 29 175 C Operating Temperature Fast
0.11. Size:262K cn minos
irf9540ns.pdf
Silicon P-Channel Power MOSFET Description The IRF9540NS uses advanced technology and design to provide excellent R . It can be used in a wide variety of applications. DS(ON) General Features V =-110V, I =-35A DS D Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Schematic diagram Application Power switching application
0.12. Size:273K inchange semiconductor
irf9540n.pdf
INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF9540N,IIRF9540N FEATURES Static drain-source on-resistance RDS(on) 0.117 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extr
Otros transistores... IRF9530, IRF9530N, APT5015BLC, IRF9530NL, IRF9530NS, IRF9531, IRF9532, IRF9533, 50N06, IRF9540N, IRF9540NL, IRF9540NS, IRF9541, IRF9542, IRF9543, IRF9610, IRF9610S
