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IRFBC40 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFBC40

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Drain Current |Id|: 6.2 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO220AB

IRFBC40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFBC40 PDF doc:

1.1. irfbc40.pdf Size:288K _st

IRFBC40
IRFBC40

IRFBC40 N - CHANNEL 600V - 1.0 ? - 6.2 A - TO-220 PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRFBC40 600 V < 1.2 ? 6.2 A TYPICAL R = 1.0 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 DESCRIPTION 2 This power MOSFET is designed using the 1 companys consolidated strip layout-based MESH OVERLAY? process. T

1.2. irfbc40a.pdf Size:200K _international_rectifier

IRFBC40
IRFBC40

SMPS MOSFET IRFBC40APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 1.2? 6.2A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche

1.3. irfbc40as.pdf Size:609K _international_rectifier

IRFBC40
IRFBC40

PD - 95545 IRFBC40ASPbF Lead-Free 7/22/04 Document Number: 91113 www.vishay.com 1 IRFBC40ASPbF Document Number: 91113 www.vishay.com 2 IRFBC40ASPbF Document Number: 91113 www.vishay.com 3 IRFBC40ASPbF Document Number: 91113 www.vishay.com 4 IRFBC40ASPbF Document Number: 91113 www.vishay.com 5 IRFBC40ASPbF Document Number: 91113 www.vishay.com 6 IRFBC40ASPbF Document N

1.4. irfbc40lc.pdf Size:167K _international_rectifier

IRFBC40
IRFBC40

1.5. irfbc40.pdf Size:178K _international_rectifier

IRFBC40
IRFBC40

1.6. irfbc40s.pdf Size:350K _international_rectifier

IRFBC40
IRFBC40

PD - 91016A IRFBC40S/L HEXFET Power MOSFET Surface Mount (IRFBC40S) D Low-profile through-hole (IRFBC40L) VDSS = 600V Available in Tape & Reel (IRFBC40S) Dynamic dv/dt Rating RDS(on) = 1.2? 150C Operating Temperature G Fast Switching ID = 6.2A Fully Avalanche Rated S Description Third generation HEXFETs from international Rectifier provide the designer with the best combi

1.7. irfbc40s-l.pdf Size:377K _international_rectifier

IRFBC40
IRFBC40

PD - 95546 IRFBC40S/LPbF Lead-Free 7/22/04 Document Number: 91116 www.vishay.com 1 IRFBC40S/LPbF Document Number: 91116 www.vishay.com 2 IRFBC40S/LPbF Document Number: 91116 www.vishay.com 3 IRFBC40S/LPbF Document Number: 91116 www.vishay.com 4 IRFBC40S/LPbF Document Number: 91116 www.vishay.com 5 IRFBC40S/LPbF Document Number: 91116 www.vishay.com 6 IRFBC40S/LPbF Doc

1.8. irfbc40pbf.pdf Size:2166K _international_rectifier

IRFBC40
IRFBC40

PD - 94955 IRFBC40PbF Lead-Free 01/29/04 Document Number: 91115 www.vishay.com 1 IRFBC40PbF Document Number: 91115 www.vishay.com 2 IRFBC40PbF Document Number: 91115 www.vishay.com 3 IRFBC40PbF Document Number: 91115 www.vishay.com 4 IRFBC40PbF Document Number: 91115 www.vishay.com 5 IRFBC40PbF Document Number: 91115 www.vishay.com 6 IRFBC40PbF TO-220AB Package Outlin

1.9. irfbc40lc_sihfbc40lc.pdf Size:209K _vishay

IRFBC40
IRFBC40

IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 1.2 Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Configuration Single

1.10. irfbc40s_sihfbc40s_irfbc40l_sihfbc40l.pdf Size:264K _vishay

IRFBC40
IRFBC40

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S) RDS(on) (?)VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S) Qgs (nC) 8.3 Dynamic dV/dt Rating Qgd (n

1.11. irfbc40as_sihfbc40as.pdf Size:361K _vishay

IRFBC40
IRFBC40

IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (?)VGS = 10 V 1.2 Low Gate Charge Qg results in Simple Drive Requirement Qg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 10 Ruggedness Qgd (nC) 20 Fully Characterized Capacitance and Avalanche Voltage Con

1.12. irfbc40_sihfbc40.pdf Size:1614K _vishay

IRFBC40
IRFBC40

IRFBC40, SiHFBC40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.2 RoHS* Fast Switching Qg (Max.) (nC) 60 COMPLIANT Ease of Paralleling Qgs (nC) 8.3 Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-2

1.13. irfbc40a_sihfbc40a.pdf Size:208K _vishay

IRFBC40
IRFBC40

IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) (?)VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 42 COMPLIANT Ruggedness Qgs (nC) 10 Fully Characterized Capacitance and Qgd (nC) 20 Avalanche Voltage and Current Configuration Single

1.14. irfbc40_irfbc42.pdf Size:73K _harris_semi

IRFBC40
IRFBC40

IRFBC40, Semiconductor IRFBC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, January 1998 N-Channel Power MOSFETs Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power • rDS(ON) = 1.2Ω and 1.6Ω MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown

Datasheet: IRFBC20L , IRFBC20S , IRFBC30 , IRFBC30A , IRFBC30AS , IRFBC30L , IRFBC30S , IRFBC32 , J113 , IRFBC40A , IRFBC40AS , IRFBC40L , IRFBC40S , IRFBC42 , IRFBE20 , IRFBE30 , IRFBF20 .

 


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