IRFBC40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFBC40
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO220AB

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IRFBC40 Datasheet (PDF)

..1. Size:178K international rectifier
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..2. Size:2166K international rectifier
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PD - 94955IRFBC40PbF Lead-Free01/29/04Document Number: 91115 www.vishay.com1IRFBC40PbFDocument Number: 91115 www.vishay.com2IRFBC40PbFDocument Number: 91115 www.vishay.com3IRFBC40PbFDocument Number: 91115 www.vishay.com4IRFBC40PbFDocument Number: 91115 www.vishay.com5IRFBC40PbFDocument Number: 91115 www.vishay.com6IRFBC40PbFTO-220AB Package O

..3. Size:288K st
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IRFBC40N - CHANNEL 600V - 1.0 - 6.2 A - TO-220PowerMESH MOSFETTYPE VDSS RDS(on) IDIRFBC40 600 V

..4. Size:1614K vishay
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IRFBC40, SiHFBC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Fast SwitchingQg (Max.) (nC) 60COMPLIANT Ease of ParallelingQgs (nC) 8.3Qgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

..5. Size:1617K vishay
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..6. Size:1566K infineon
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..7. Size:73K harris semi
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IRFBC40,SemiconductorIRFBC426.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,January 1998 N-Channel Power MOSFETsFeatures Description 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 1.2 and 1.6MOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the breakdown

..8. Size:284K inchange semiconductor
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iscN-Channel MOSFET Transistor IRFBC40FEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

0.1. Size:609K international rectifier
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PD - 95545IRFBC40ASPbF Lead-Free7/22/04Document Number: 91113 www.vishay.com1IRFBC40ASPbFDocument Number: 91113 www.vishay.com2IRFBC40ASPbFDocument Number: 91113 www.vishay.com3IRFBC40ASPbFDocument Number: 91113 www.vishay.com4IRFBC40ASPbFDocument Number: 91113 www.vishay.com5IRFBC40ASPbFDocument Number: 91113 www.vishay.com6IRFBC40ASPbFDocum

0.2. Size:200K international rectifier
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SMPS MOSFETIRFBC40APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 1.2 6.2Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Aval

0.3. Size:167K international rectifier
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0.4. Size:377K international rectifier
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PD - 95546IRFBC40S/LPbF Lead-Free7/22/04Document Number: 91116 www.vishay.com1IRFBC40S/LPbFDocument Number: 91116 www.vishay.com2IRFBC40S/LPbFDocument Number: 91116 www.vishay.com3IRFBC40S/LPbFDocument Number: 91116 www.vishay.com4IRFBC40S/LPbFDocument Number: 91116 www.vishay.com5IRFBC40S/LPbFDocument Number: 91116 www.vishay.com6IRFBC40S/LPbF

0.5. Size:189K international rectifier
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0.6. Size:350K international rectifier
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PD - 91016AIRFBC40S/LHEXFET Power MOSFET Surface Mount (IRFBC40S)D Low-profile through-hole (IRFBC40L) VDSS = 600V Available in Tape & Reel (IRFBC40S) Dynamic dv/dt RatingRDS(on) = 1.2 150C Operating TemperatureG Fast SwitchingID = 6.2A Fully Avalanche RatedSDescriptionThird generation HEXFETs from international Rectifier provide the designer with thebes

0.7. Size:264K vishay
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IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S)RDS(on) ()VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S)Qgs (nC) 8.3 Dynamic dV/dt

0.8. Size:361K vishay
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IRFBC40AS, SiHFBC40ASVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 1.2 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 10RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanche

0.9. Size:209K vishay
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IRFBC40LC, SiHFBC40LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 1.2 Enhanced 30 V, VGS RatingRoHS*Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche RatedConf

0.10. Size:387K vishay
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0.11. Size:290K vishay
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0.12. Size:208K vishay
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IRFBC40A, SiHFBC40AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 42COMPLIANTRuggednessQgs (nC) 10 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfigurati

0.13. Size:986K vishay
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IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface Mount (IRFBC40S/SiHFBC40S)VDS (V) 600Available Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)RDS(on) ()VGS = 10 V 1.2RoHS* Available in Tape and Reel (IRFBC20S,COMPLIANTQg (Max.) (nC) 60SiHFBC20S)Qgs (nC) 8.3 Dynamic dV/dt RatingQgd (nC) 30 15

0.14. Size:210K vishay
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0.15. Size:284K inchange semiconductor
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iscN-Channel MOSFET Transistor IRFBC40AFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

0.16. Size:322K inchange semiconductor
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iscN-Channel MOSFET Transistor IRFBC40LFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

0.17. Size:278K inchange semiconductor
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iscN-Channel MOSFET Transistor IRFBC40ASFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Otros transistores... IRFBC20L , IRFBC20S , IRFBC30 , IRFBC30A , IRFBC30AS , IRFBC30L , IRFBC30S , IRFBC32 , MMIS60R580P , IRFBC40A , IRFBC40AS , IRFBC40L , IRFBC40S , IRFBC42 , IRFBE20 , IRFBE30 , IRFBF20 .