IRFBC40 Datasheet and Replacement
Type Designator: IRFBC40
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id| ⓘ - Maximum Drain Current: 6.2
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Qg ⓘ - Total Gate Charge: 60(max)
nC
tr ⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 160
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2
Ohm
Package:
TO220AB
-
MOSFET ⓘ Cross-Reference Search
IRFBC40 Datasheet (PDF)
..2. Size:2166K international rectifier
irfbc40pbf.pdf 
PD - 94955IRFBC40PbF Lead-Free01/29/04Document Number: 91115 www.vishay.com1IRFBC40PbFDocument Number: 91115 www.vishay.com2IRFBC40PbFDocument Number: 91115 www.vishay.com3IRFBC40PbFDocument Number: 91115 www.vishay.com4IRFBC40PbFDocument Number: 91115 www.vishay.com5IRFBC40PbFDocument Number: 91115 www.vishay.com6IRFBC40PbFTO-220AB Package O
..3. Size:288K st
irfbc40.pdf
IRFBC40N - CHANNEL 600V - 1.0 - 6.2 A - TO-220PowerMESH MOSFETTYPE VDSS RDS(on) IDIRFBC40 600 V
..4. Size:1614K vishay
irfbc40 sihfbc40.pdf
IRFBC40, SiHFBC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Fast SwitchingQg (Max.) (nC) 60COMPLIANT Ease of ParallelingQgs (nC) 8.3Qgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
..5. Size:1617K vishay
irfbc40pbf sihfbc40.pdf
IRFBC40, SiHFBC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Fast SwitchingQg (Max.) (nC) 60COMPLIANT Ease of ParallelingQgs (nC) 8.3Qgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
..6. Size:1566K infineon
irfbc40 sihfbc40.pdf
IRFBC40, SiHFBC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2RoHS* Fast SwitchingQg (Max.) (nC) 60COMPLIANT Ease of ParallelingQgs (nC) 8.3Qgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
..7. Size:73K harris semi
irfbc40 irfbc42.pdf
IRFBC40,SemiconductorIRFBC426.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,January 1998 N-Channel Power MOSFETsFeatures Description 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 1.2 and 1.6MOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the breakdown
..8. Size:284K inchange semiconductor
irfbc40.pdf
iscN-Channel MOSFET Transistor IRFBC40FEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
0.1. Size:609K international rectifier
irfbc40aspbf.pdf
PD - 95545IRFBC40ASPbF Lead-Free7/22/04Document Number: 91113 www.vishay.com1IRFBC40ASPbFDocument Number: 91113 www.vishay.com2IRFBC40ASPbFDocument Number: 91113 www.vishay.com3IRFBC40ASPbFDocument Number: 91113 www.vishay.com4IRFBC40ASPbFDocument Number: 91113 www.vishay.com5IRFBC40ASPbFDocument Number: 91113 www.vishay.com6IRFBC40ASPbFDocum
0.2. Size:200K international rectifier
irfbc40a.pdf
SMPS MOSFETIRFBC40APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 1.2 6.2Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Aval
0.4. Size:377K international rectifier
irfbc40spbf irfbc40lpbf.pdf
PD - 95546IRFBC40S/LPbF Lead-Free7/22/04Document Number: 91116 www.vishay.com1IRFBC40S/LPbFDocument Number: 91116 www.vishay.com2IRFBC40S/LPbFDocument Number: 91116 www.vishay.com3IRFBC40S/LPbFDocument Number: 91116 www.vishay.com4IRFBC40S/LPbFDocument Number: 91116 www.vishay.com5IRFBC40S/LPbFDocument Number: 91116 www.vishay.com6IRFBC40S/LPbF
0.5. Size:189K international rectifier
irfbc40apbf.pdf
SMPS MOSFETIRFBC40APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 1.2 6.2Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Aval
0.6. Size:350K international rectifier
irfbc40s irfbc40l.pdf
PD - 91016AIRFBC40S/LHEXFET Power MOSFET Surface Mount (IRFBC40S)D Low-profile through-hole (IRFBC40L) VDSS = 600V Available in Tape & Reel (IRFBC40S) Dynamic dv/dt RatingRDS(on) = 1.2 150C Operating TemperatureG Fast SwitchingID = 6.2A Fully Avalanche RatedSDescriptionThird generation HEXFETs from international Rectifier provide the designer with thebes
0.7. Size:264K vishay
irfbc40s sihfbc40s irfbc40l sihfbc40l.pdf
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S)RDS(on) ()VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S)Qgs (nC) 8.3 Dynamic dV/dt
0.8. Size:361K vishay
irfbc40as sihfbc40as.pdf
IRFBC40AS, SiHFBC40ASVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 1.2 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 10RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanche
0.9. Size:209K vishay
irfbc40lc sihfbc40lc.pdf
IRFBC40LC, SiHFBC40LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 1.2 Enhanced 30 V, VGS RatingRoHS*Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche RatedConf
0.10. Size:387K vishay
irfbc40aspbf sihfbc40as.pdf
IRFBC40AS, SiHFBC40ASVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 1.2 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 10RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanche
0.11. Size:290K vishay
irfbc40spbf sihfbc40l sihfbc40s.pdf
IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600 Definition Surface Mount (IRFBC40S, SiHFBC40S)RDS(on) ()VGS = 10 V 1.2 Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)Qg (Max.) (nC) 60 Available in Tape and Reel (IRFBC40S, SiHFBC40S)Qgs (nC) 8.3 Dynamic dV/dt
0.12. Size:208K vishay
irfbc40a sihfbc40a.pdf
IRFBC40A, SiHFBC40AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 42COMPLIANTRuggednessQgs (nC) 10 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfigurati
0.13. Size:986K vishay
irfbc40lpbf.pdf
IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface Mount (IRFBC40S/SiHFBC40S)VDS (V) 600Available Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)RDS(on) ()VGS = 10 V 1.2RoHS* Available in Tape and Reel (IRFBC20S,COMPLIANTQg (Max.) (nC) 60SiHFBC20S)Qgs (nC) 8.3 Dynamic dV/dt RatingQgd (nC) 30 15
0.14. Size:210K vishay
irfbc40lc irfbc40lcpbf sihfbc40lc.pdf
IRFBC40LC, SiHFBC40LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 1.2 Enhanced 30 V, VGS RatingRoHS*Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC) 19 Repetitive Avalanche RatedConf
0.15. Size:284K inchange semiconductor
irfbc40a.pdf
iscN-Channel MOSFET Transistor IRFBC40AFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
0.16. Size:322K inchange semiconductor
irfbc40l.pdf
iscN-Channel MOSFET Transistor IRFBC40LFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
0.17. Size:278K inchange semiconductor
irfbc40as.pdf
iscN-Channel MOSFET Transistor IRFBC40ASFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Datasheet: IRFBC20L
, IRFBC20S
, IRFBC30
, IRFBC30A
, IRFBC30AS
, IRFBC30L
, IRFBC30S
, IRFBC32
, MMIS60R580P
, IRFBC40A
, IRFBC40AS
, IRFBC40L
, IRFBC40S
, IRFBC42
, IRFBE20
, IRFBE30
, IRFBF20
.
Keywords - IRFBC40 MOSFET datasheet
IRFBC40 cross reference
IRFBC40 equivalent finder
IRFBC40 lookup
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