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IRFP150N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP150N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 39 A

Maximum Junction Temperature (Tj): 175 °C

Drain-Source Capacitance (Cd): 1900 pF

Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm

Package: TO247

IRFP150N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFP150N PDF doc:

1.1. irfp150n.pdf Size:135K _international_rectifier

IRFP150N
IRFP150N

PD- 91503C IRFP150N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175°C Operating Temperature Fast Switching RDS(on) = 0.036W Fully Avalanche Rated G ID = 42A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, co

3.1. irfp150-1-2-3-fi.pdf Size:487K _st2

IRFP150N
IRFP150N

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3.2. irfp150a.pdf Size:261K _fairchild_semi

IRFP150N
IRFP150N

IRFP150A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area TO-3P ? 175 C Operating Temperature µA (Max.) @ VDS = 100V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolut

3.3. irfp150.pdf Size:167K _international_rectifier

IRFP150N
IRFP150N

3.4. irfp150pbf.pdf Size:1994K _international_rectifier

IRFP150N
IRFP150N

PD - 95003 IRFP150PbF • Lead-Free 2/11/04 Document Number: 91203 www.vishay.com 1 IRFP150PbF Document Number: 91203 www.vishay.com 2 IRFP150PbF Document Number: 91203 www.vishay.com 3 IRFP150PbF Document Number: 91203 www.vishay.com 4 IRFP150PbF Document Number: 91203 www.vishay.com 5 IRFP150PbF Document Number: 91203 www.vishay.com 6 IRFP150PbF TO-247AC Package Outline

3.5. irfp150v.pdf Size:520K _international_rectifier

IRFP150N
IRFP150N

PD - 94459A IRFP150V HEXFET® Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 24m? G l Fast Switching l Fully Avalanche Rated ID = 47A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

3.6. irfp150a.pdf Size:957K _samsung

IRFP150N
IRFP150N

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V ? 1 Lower RDS(ON) : 0.032 (Typ.) 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings S

3.7. irfp150_sihfp150.pdf Size:1470K _vishay

IRFP150N
IRFP150N

IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 • Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.055 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 • 175 °C Operating Temperature COMPLIANT Qgs (nC) 29 • Fast Switching Qgd (nC) 68 • Ease of Paralleling Configuration Single • Simple Drive Require

Datasheet: IRFP140N , IRFP141 , IRFP142 , IRFP143 , APT50M38JFLL , IRFP150 , IRFP150A , IRFP150FI , 2SK117 , IRFP151 , IRFP152 , IRFP153 , IRFP22N50A , IRFP230 , IRFP231 , IRFP232 , IRFP233 .

 


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