IRFP150N MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP150N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 42 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 110(max) nC
Rise Time (tr): 56 nS
Drain-Source Capacitance (Cd): 450 pF
Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm
Package: TO247AC
IRFP150N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP150N Datasheet (PDF)
irfp150n.pdf
PD- 91503CIRFP150NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.036W Fully Avalanche RatedGID = 42ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefi
irfp150npbf.pdf
PD - 95002IRFP150NPbF Lead-Freewww.irf.com 12/11/04IRFP150NPbF2 www.irf.comIRFP150NPbFwww.irf.com 3IRFP150NPbF4 www.irf.comIRFP150NPbFwww.irf.com 5IRFP150NPbF6 www.irf.comIRFP150NPbFwww.irf.com 7IRFP150NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1
irfp150npbf.pdf
PD - 95002IRFP150NPbF Lead-Freewww.irf.com 12/11/04IRFP150NPbF2 www.irf.comIRFP150NPbFwww.irf.com 3IRFP150NPbF4 www.irf.comIRFP150NPbFwww.irf.com 5IRFP150NPbF6 www.irf.comIRFP150NPbFwww.irf.com 7IRFP150NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1
irfp150n.pdf
isc N-Channel MOSFET Transistor IRFP150NIIRFP150NFEATURESStatic drain-source on-resistance:RDS(on)36mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
irfp150mpbf.pdf
PD - 96291IRFP150MPbF Lead-Freewww.irf.com 103/01/10IRFP150MPbF2 www.irf.comIRFP150MPbFwww.irf.com 3IRFP150MPbF4 www.irf.comIRFP150MPbFwww.irf.com 5IRFP150MPbF6 www.irf.comIRFP150MPbFwww.irf.com 7IRFP150MPbFTO-247AC Package Outline (Dimensions are shown in millimeters (inches))TO-247AC Part Marking InformationData and specifications subject
irfp150v.pdf
PD - 94459AIRFP150VHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 24mGl Fast Switchingl Fully Avalanche RatedID = 47ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-re
irfp150pbf.pdf
PD - 95003IRFP150PbF Lead-Free2/11/04Document Number: 91203 www.vishay.com1IRFP150PbFDocument Number: 91203 www.vishay.com2IRFP150PbFDocument Number: 91203 www.vishay.com3IRFP150PbFDocument Number: 91203 www.vishay.com4IRFP150PbFDocument Number: 91203 www.vishay.com5IRFP150PbFDocument Number: 91203 www.vishay.com6IRFP150PbFTO-247AC Package Ou
irfp150a.pdf
IRFP150AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 43 A Improved Gate Charge Extended Safe Operating AreaTO-3P 175 C Operating TemperatureA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.032 (Typ.) 1231.Gate 2. Drain 3. Source
irfp150a.pdf
Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 43 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V 1 Lower RDS(ON) : 0.032 (Typ.)231.Gate 2. Drain 3. SourceAbsolute Maximum R
irfp150 sihfp150.pdf
IRFP150, SiHFP150Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 0.055 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 140 175 C Operating TemperatureCOMPLIANTQgs (nC) 29 Fast SwitchingQgd (nC) 68 Ease of ParallelingConfiguration Single S
irfp150pbf.pdf
PD - 95003IRFP150PbF Lead-Freewww.irf.com 12/11/04IRFP150PbF2 www.irf.comIRFP150PbFwww.irf.com 3IRFP150PbF4 www.irf.comIRFP150PbFwww.irf.com 5IRFP150PbF6 www.irf.comIRFP150PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2.
irfp150mpbf.pdf
PD - 96291IRFP150MPbF Lead-Freewww.irf.com 103/01/10IRFP150MPbF2 www.irf.comIRFP150MPbFwww.irf.com 3IRFP150MPbF4 www.irf.comIRFP150MPbFwww.irf.com 5IRFP150MPbF6 www.irf.comIRFP150MPbFwww.irf.com 7IRFP150MPbFTO-247AC Package Outline (Dimensions are shown in millimeters (inches))TO-247AC Part Marking InformationData and specifications subject
irfp150a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
irfp150a.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP150AFEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)Fast Switching100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode
irfp150.pdf
iscN-Channel MOSFET Transistor IRFP150FEATURESLow drain-source on-resistance:RDS(ON) 55m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
irfp150m.pdf
isc N-Channel MOSFET Transistor IRFP150MIIRFP150MFEATURESStatic drain-source on-resistance:RDS(on)36mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
Datasheet: IRFP140N , IRFP141 , IRFP142 , IRFP143 , APT50M38JFLL , IRFP150 , IRFP150A , IRFP150FI , 6N60 , IRFP151 , IRFP152 , IRFP153 , IRFP22N50A , IRFP230 , IRFP231 , IRFP232 , IRFP233 .
History: IRF540N
