IRFP150N Todos los transistores

 

IRFP150N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP150N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 160 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 39 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 73.3 nC

Conductancia de drenaje-sustrato (Cd): 1900 pF

Resistencia drenaje-fuente RDS(on): 0.036 Ohm

Empaquetado / Estuche: TO247

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IRFP150N Datasheet (PDF)

1.1. irfp150npbf.pdf Size:1024K _upd-mosfet

IRFP150N
IRFP150N

PD - 95002 IRFP150NPbF • Lead-Free www.irf.com 1 2/11/04 IRFP150NPbF 2 www.irf.com IRFP150NPbF www.irf.com 3 IRFP150NPbF 4 www.irf.com IRFP150NPbF www.irf.com 5 IRFP150NPbF 6 www.irf.com IRFP150NPbF www.irf.com 7 IRFP150NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 1

1.2. irfp150n.pdf Size:135K _international_rectifier

IRFP150N
IRFP150N

PD- 91503C IRFP150N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175C Operating Temperature Fast Switching RDS(on) = 0.036W Fully Avalanche Rated G ID = 42A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, co

 3.1. irfp150pbf.pdf Size:1994K _upd-mosfet

IRFP150N
IRFP150N

PD - 95003 IRFP150PbF • Lead-Free 2/11/04 Document Number: 91203 www.vishay.com 1 IRFP150PbF Document Number: 91203 www.vishay.com 2 IRFP150PbF Document Number: 91203 www.vishay.com 3 IRFP150PbF Document Number: 91203 www.vishay.com 4 IRFP150PbF Document Number: 91203 www.vishay.com 5 IRFP150PbF Document Number: 91203 www.vishay.com 6 IRFP150PbF TO-247AC Package Ou

3.2. irfp150mpbf.pdf Size:1141K _upd-mosfet

IRFP150N
IRFP150N

PD - 96291 IRFP150MPbF Ω • Lead-Free www.irf.com 1 03/01/10 IRFP150MPbF 2 www.irf.com IRFP150MPbF www.irf.com 3 IRFP150MPbF 4 www.irf.com IRFP150MPbF www.irf.com 5 IRFP150MPbF 6 www.irf.com IRFP150MPbF www.irf.com 7 IRFP150MPbF TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) TO-247AC Part Marking Information Data and specifications subject

 3.3. irfp150-1-2-3-fi.pdf Size:487K _st2

IRFP150N
IRFP150N

3.4. irfp150a.pdf Size:261K _fairchild_semi

IRFP150N
IRFP150N

IRFP150A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area TO-3P ? 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolut

 3.5. irfp150.pdf Size:167K _international_rectifier

IRFP150N
IRFP150N

3.6. irfp150pbf.pdf Size:1994K _international_rectifier

IRFP150N
IRFP150N

PD - 95003 IRFP150PbF Lead-Free 2/11/04 Document Number: 91203 www.vishay.com 1 IRFP150PbF Document Number: 91203 www.vishay.com 2 IRFP150PbF Document Number: 91203 www.vishay.com 3 IRFP150PbF Document Number: 91203 www.vishay.com 4 IRFP150PbF Document Number: 91203 www.vishay.com 5 IRFP150PbF Document Number: 91203 www.vishay.com 6 IRFP150PbF TO-247AC Package Outline

3.7. irfp150v.pdf Size:520K _international_rectifier

IRFP150N
IRFP150N

PD - 94459A IRFP150V HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175C Operating Temperature RDS(on) = 24m? G l Fast Switching l Fully Avalanche Rated ID = 47A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

3.8. irfp150a.pdf Size:957K _samsung

IRFP150N
IRFP150N

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? 1 Lower RDS(ON) : 0.032 (Typ.) 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings S

3.9. irfp150 sihfp150.pdf Size:1470K _vishay

IRFP150N
IRFP150N

IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.055 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 175 C Operating Temperature COMPLIANT Qgs (nC) 29 Fast Switching Qgd (nC) 68 Ease of Paralleling Configuration Single Simple Drive Require

Otros transistores... IRFP140N , IRFP141 , IRFP142 , IRFP143 , APT50M38JFLL , IRFP150 , IRFP150A , IRFP150FI , 2SK117 , IRFP151 , IRFP152 , IRFP153 , IRFP22N50A , IRFP230 , IRFP231 , IRFP232 , IRFP233 .

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