All MOSFET. IRFP150N Datasheet


IRFP150N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP150N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 42 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 110(max) nC

Rise Time (tr): 56 nS

Drain-Source Capacitance (Cd): 450 pF

Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm

Package: TO247AC

IRFP150N Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRFP150N Datasheet (PDF)

0.1. irfp150n.pdf Size:135K _international_rectifier


PD- 91503CIRFP150NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.036W Fully Avalanche RatedGID = 42ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefi

0.2. irfp150npbf.pdf Size:1024K _international_rectifier


PD - 95002IRFP150NPbF 12/11/04IRFP150NPbF2 3IRFP150NPbF4 5IRFP150NPbF6 7IRFP150NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1

 0.3. irfp150n.pdf Size:241K _inchange_semiconductor


isc N-Channel MOSFET Transistor IRFP150NIIRFP150NFEATURESStatic drain-source on-resistance:RDS(on)36mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Datasheet: IRFP140N , IRFP141 , IRFP142 , IRFP143 , APT50M38JFLL , IRFP150 , IRFP150A , IRFP150FI , 2SK117 , IRFP151 , IRFP152 , IRFP153 , IRFP22N50A , IRFP230 , IRFP231 , IRFP232 , IRFP233 .


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