MOSFET Datasheet

Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF190N60E
FCPF20N60 ..FDD10N20LZ
FDD120AN15A0 ..FDMA520PZ
FDPF12N60NZ ..FDS9936A
FDS9945 ..FQB7P20TM_F085
FQPF9N50C ..FRX130H1
FRX130H2 ..H5N3005LD
H5N3005LS ..HAT2140H
HAT2141H ..HUF75623P3
HUF75631P3 ..IPB052N04NG
IPB054N06N3G ..IPD30N08S2-22
IPD30N08S2L-21 ..IPL60R385CP
IPP015N04NG ..IPW50R140CP
IPW50R199CP ..IRF3315S
IRF340 ..IRF6626
IRF6628 ..IRF7504
IRF7506 ..IRF9642
IRF9643 ..IRFH5303
IRFH5304 ..IRFP240FI
IRFP241 ..IRFR5305
IRFR540Z ..IRFS9232
IRFS9233 ..IRFY120
IRFY120C ..IRLHS2242
IXFH24N80P ..IXFL34N100
IXFL36N110P ..IXFR18N90P
IXFR200N10P ..IXFX20N120P
IXFX21N100F ..IXTA60N20T
IXTA62N15P ..IXTH60N25
KF3N50FS ..KP103L
KP103M ..MCH6336
MCH6337 ..MTBA5C10AQ8
MTBA5C10Q8 ..MTN3418S3
MTN3434G6 ..NDB5060L
NDB508A ..NTD4906N
NTD4909N ..NUS3116MT
NUS5530MN ..PMBF5484
PMBF5485 ..PSMN3R4-30PL
RJK0854DPB ..RRQ045P03
RRR015P03 ..SDF130JDA-D
SDF130JDA-S ..SFT1423
SFT1431 ..SMG2391P
SMG2398N ..SML50B26
SML50B30 ..SPB20N60C3
SPB20N60S5 ..SSG4224
SSG4228 ..SSM3K102TU
STB438S ..STD5N20
STD5N20-1 ..STF8234
STF8236 ..STL80N75F6
STL85N6F3 ..STP200NF04L
STP20N06 ..STP652F
STP656F ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A60U
TK12A65D ..TPC6130
TPC6201 ..TPCA8A09-H
TPCA8A10-H ..UT3418
UT3419 ..ZVN2110A
ZVN2110G ..ZXMS6005SG
IRFP260 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.

IRFP260 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFP260

Type of IRFP260 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 280

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 46

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFP260 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.055

Package: TO3P

Equivalent transistors for IRFP260

IRFP260 PDF doc:

1.1. irfp260n.pdf Size:122K _international_rectifier

PD - 94004A IRFP260N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching RDS(on) = 0.04? G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous

1.2. irfp260pbf.pdf Size:1340K _international_rectifier

PD- 95915 IRFP260PbF • Lead-Free 9/27/04 Document Number: 91215 1 IRFP260PbF Document Number: 91215 2 IRFP260PbF Document Number: 91215 3 IRFP260PbF Document Number: 91215 4 IRFP260PbF Document Number: 91215 5 IRFP260PbF Document Number: 91215 6 IRFP260PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent ISD Ri

1.3. irfp260.pdf Size:168K _international_rectifier


1.4. irfp260_sihfp260.pdf Size:1762K _vishay

IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.055 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 230 COMPLIANT • Fast Switching Qgs (nC) 42 • Ease of Paralleling Qgd (nC) 110 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D TO-247AC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-247AC package is preferred for S D commercial-industrial applications where higher power G S levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 N-Channel MOSFET package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safe

See also transistors datasheet: IRFP250 , IRFP250A , IRFP251 , IRFP252 , IRFP253 , IRFP254 , IRFP254A , IRFP255 , BUZ11 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , IRFP340A , IRFP341 .


 IRFP260 Datasheet  IRFP260 Datenblatt  IRFP260 RoHS  IRFP260 Distributor
 IRFP260 Application Notes  IRFP260 Component  IRFP260 Circuit  IRFP260 Schematic
 IRFP260 Equivalent  IRFP260 Cross Reference  IRFP260 Data Sheet  IRFP260 Fiche Technique

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