IRFP260 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP260
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 280 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 46 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm
Package: TO3P
IRFP260 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP260 Datasheet (PDF)
1.1. irfp260pbf.pdf 
Size:1340K _international_rectifier
PD- 95915 IRFP260PbF • Lead-Free 9/27/04 Document Number: 91215 www.vishay.com 1 IRFP260PbF Document Number: 91215 www.vishay.com 2 IRFP260PbF Document Number: 91215 www.vishay.com 3 IRFP260PbF Document Number: 91215 www.vishay.com 4 IRFP260PbF Document Number: 91215 www.vishay.com 5 IRFP260PbF Document Number: 91215 www.vishay.com 6 IRFP260PbF Peak Diode Recovery dv/dt
1.2. irfp260.pdf Size:168K _international_rectifier
1.3. irfp260n.pdf Size:122K _international_rectifier
PD - 94004A IRFP260N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching RDS(on) = 0.04? G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
1.4. irfp260_sihfp260.pdf Size:1762K _vishay
IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.055 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 230 COMPLIANT • Fast Switching Qgs (nC) 42 • Ease of Paralleling Qgd (nC) 110 • Simple Drive Requirements Configuration Single • Compliant to RoHS Dire
Datasheet: IRFP250 , IRFP250A , IRFP251 , IRFP252 , IRFP253 , IRFP254 , IRFP254A , IRFP255 , BUZ11 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , IRFP340A , IRFP341 .
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