IRFS640A MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFS640A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 43 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9.8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 44 nC
Rise Time (tr): 16 nS
Drain-Source Capacitance (Cd): 210 pF
Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm
Package: TO220F
IRFS640A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFS640A Datasheet (PDF)
irfs640a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ. )1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
irf640b irfs640b.pdf
November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to
irfs640b.pdf
November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to
Datasheet: IRFS625 , IRFS630 , IRFS630A , IRFS632 , IRFS634 , IRFS634A , IRFS635 , IRFS640 , AO4407 , IRFS642 , IRFS644 , IRFS644A , IRFS645 , IRFS650A , IRFS654A , IRFS710A , IRFS720 .
