IRFS640A Datasheet. Specs and Replacement

Type Designator: IRFS640A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO220F

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IRFS640A substitution

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IRFS640A datasheet

 ..1. Size:508K  samsung
 irfs640a.pdf pdf_icon

IRFS640A

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Lower RDS(ON) 0.144 (Typ. ) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic ... See More ⇒

 7.1. Size:301K  1
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IRFS640A

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 7.2. Size:916K  fairchild semi
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IRFS640A

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 7.3. Size:922K  fairchild semi
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IRFS640A

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Detailed specifications: IRFS625, IRFS630, IRFS630A, IRFS632, IRFS634, IRFS634A, IRFS635, IRFS640, TK10A60D, IRFS642, IRFS644, IRFS644A, IRFS645, IRFS650A, IRFS654A, IRFS710A, IRFS720

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.