IRFS640A Datasheet and Replacement
Type Designator: IRFS640A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 210 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220F
IRFS640A substitution
IRFS640A Datasheet (PDF)
irfs640a.pdf

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ. )1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
irf640b irfs640b.pdf

November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to
irfs640b.pdf

November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to
Datasheet: IRFS625 , IRFS630 , IRFS630A , IRFS632 , IRFS634 , IRFS634A , IRFS635 , IRFS640 , IRFZ24N , IRFS642 , IRFS644 , IRFS644A , IRFS645 , IRFS650A , IRFS654A , IRFS710A , IRFS720 .
History: HYG064N08NA1B | FDWS9520L-F085
Keywords - IRFS640A MOSFET datasheet
IRFS640A cross reference
IRFS640A equivalent finder
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History: HYG064N08NA1B | FDWS9520L-F085



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