MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRFZ44N
  IRFZ44N
  IRFZ44N
 
IRFZ44N
  IRFZ44N
  IRFZ44N
 
IRFZ44N
  IRFZ44N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF190N60E
FCPF20N60 ..FDD10N20LZ
FDD120AN15A0 ..FDMA520PZ
FDMA530PZ ..FDMS8025S
FDMS8026S ..FDPF12N50UT
FDPF12N60NZ ..FDS9936A
FDS9945 ..FQB7P20TM_F085
FQB8N60C ..FQPF9N25C
FQPF9N50C ..FRX130H1
FRX130H2 ..H5N3005LD
H5N3005LS ..HAT2140H
HAT2141H ..HUF75623P3
HUF75631P3 ..IPB052N04NG
IPB054N06N3G ..IPD30N08S2-22
IPD30N08S2L-21 ..IPL60R385CP
IPP015N04NG ..IPW50R140CP
IPW50R199CP ..IRF3315S
IRF340 ..IRF6626
IRF6628 ..IRF7504
IRF7506 ..IRF9642
IRF9643 ..IRFH5303
IRFH5304 ..IRFP240FI
IRFP241 ..IRFR5305
IRFR540Z ..IRFS9232
IRFS9233 ..IRFY120
IRFY120C ..IRLHS2242
IRLHS6242 ..IRLWZ44A
IRLZ10 ..IXFH24N50Q
IXFH24N80P ..IXFL34N100
IXFL36N110P ..IXFR18N90P
IXFR200N10P ..IXFX20N120P
IXFX21N100F ..IXTA60N20T
IXTA62N15P ..IXTH60N25
IXTH67N08MA ..IXTP2N80
IXTP2N80P ..IXTT50P10
IXTT52N30P ..KF3N50DZ
KF3N50FS ..KP103L
KP103M ..MCH6336
MCH6337 ..MTBA5C10AQ8
MTBA5C10Q8 ..MTN3418S3
MTN3434G6 ..NDB5060L
NDB508A ..NTD4906N
NTD4909N ..NUS3116MT
NUS5530MN ..PMBF5484
PMBF5485 ..PSMN3R4-30PL
PSMN3R5-30LL ..RFD16N05LSM
RFD16N05SM ..RJK0853DPB
RJK0854DPB ..RRQ045P03
RRR015P03 ..SDF130JDA-D
SDF130JDA-S ..SFT1423
SFT1431 ..SMG2391P
SMG2398N ..SML50B26
SML50B30 ..SPB20N60C3
SPB20N60S5 ..SSG4224
SSG4228 ..SSM3K102TU
SSM3K104TU ..SSP4N80A
SSP4N80AS ..STB438A
STB438S ..STD5N20
STD5N20-1 ..STF8234
STF8236 ..STL80N75F6
STL85N6F3 ..STP200NF04L
STP20N06 ..STP652F
STP656F ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A60U
TK12A65D ..TPC6130
TPC6201 ..TPCA8A09-H
TPCA8A10-H ..UT3418
UT3419 ..ZVN2110A
ZVN2110G ..ZXMS6005SG
ZXMS6006DG ..ZXMS6006SG
 
IRFZ44N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFZ44N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFZ44N

Type of IRFZ44N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 83

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 41

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFZ44N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.024

Package: TO220AB

Equivalent transistors for IRFZ44N

IRFZ44N PDF doc:

1.1. irfz44ns_1.pdf Size:57K _philips

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device features very Ptot Total power dissipation 110 W low on-state resistance and has Tj Junction temperature 175 ?C integral zener diodes giving ESD RDS(ON) Drain-source on-state 22 m? protection up to 2kV. It is intended for resistance VGS = 10 V use in switched mode power supplies and general purpose switching applications. PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source vo

1.2. irfz44n_1.pdf Size:52K _philips

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-state resistance Ptot Total power dissipation 110 W and has integral zener diodes giving Tj Junction temperature 175 ?C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 22 m? intended for use in switched mode resistance VGS = 10 V power supplies and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drai

1.3. irfz44ns_1.pdf Size:57K _international_rectifier

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device features very Ptot Total power dissipation 110 W low on-state resistance and has Tj Junction temperature 175 ?C integral zener diodes giving ESD RDS(ON) Drain-source on-state 22 m? protection up to 2kV. It is intended for resistance VGS = 10 V use in switched mode power supplies and general purpose switching applications. PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source vo

1.4. irfz44ns.pdf Size:151K _international_rectifier

IRFZ44N
IRFZ44N
PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET® Power MOSFET Low-profile through-hole (IRFZ44NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175? Description G Advanced HEXFET® Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, S combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable D 2 Pak TO-262 for high current applications because of its low internal

1.5. irfz44n_1.pdf Size:52K _international_rectifier

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-state resistance Ptot Total power dissipation 110 W and has integral zener diodes giving Tj Junction temperature 175 ?C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 22 m? intended for use in switched mode resistance VGS = 10 V power supplies and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drai

1.6. irfz44n.pdf Size:100K _international_rectifier

IRFZ44N
IRFZ44N
PD - 94053 IRFZ44N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 17.5m? G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C

1.7. irfz44n.pdf Size:145K _inchange_semiconductor

IRFZ44N
IRFZ44N
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 49 A IDM Drain Current-Single Pluse (tp?10?s) 160 A PD Total Dissipation @TC=25? 94 W Max. Operating Junction Temperature 175 ? TJ Storage Temperature -55~175 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARA

See also transistors datasheet: IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 , IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , 2SK2837 , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL .

Keywords

 IRFZ44N Datasheet  IRFZ44N Datenblatt  IRFZ44N RoHS  IRFZ44N Distributor
 IRFZ44N Application Notes  IRFZ44N Component  IRFZ44N Circuit  IRFZ44N Schematic
 IRFZ44N Equivalent  IRFZ44N Cross Reference  IRFZ44N Data Sheet  IRFZ44N Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages