MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRFZ44N
  IRFZ44N
  IRFZ44N
 
IRFZ44N
  IRFZ44N
  IRFZ44N
 
IRFZ44N
  IRFZ44N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRF7669L2TR
AUIRF7675M2 ..BF1201
BF1201R ..BLF6G10-200RN
BLF6G10-45 ..BSC032N03SG
BSC034N03LSG ..BSS83
BSS83P ..BUK7105-40ATE
BUK7107-40ATC ..BUK9514-30
BUK9514-55 ..BUZ80FI
BUZ90 ..CED6601
CED6861 ..CEP14G04
CEP14N5 ..DMB54D0UDW
DMB54D0UDW ..DMP3130L
DMP3160L ..FDB035N10A
FDB039N06 ..FDD4141
FDD4141_F085 ..FDMC3020DC
FDMC3020DC ..FDN359AN
FDN359BN ..FDS2672
FDS2672_F085 ..FDT86102LZ
FDT86102LZ ..FQB8N60C
FQB8P10 ..FQPF2N80
FQPF2N80 ..FRM9140H
FRM9140R ..H05N60F
H06N60E ..HAT1132R
HAT1139H ..HN4K03JU
HP4410DY ..IPA60R450E6
IPA60R520C6 ..IPD031N06L3G
IPD034N06N3G ..IPI50R380CE
IPI50R399CP ..IPP80N03S4L-04
IPP80N04S2-04 ..IRF1405ZS
IRF1405ZS-7P ..IRF630A
IRF630FI ..IRF7404Q
IRF7406 ..IRF9335
IRF9358 ..IRFE9110
IRFE9120 ..IRFN140
IRFN150 ..IRFR1N60A
IRFR210 ..IRFS640
IRFS640A ..IRFU9010
IRFU9012 ..IRL541
IRL5602S ..IRLU110A
IRLU120A ..IXFH13N50
IXFH13N80 ..IXFK44N50F
IXFK44N50P ..IXFP12N50PM
IXFP130N10T ..IXFV18N60PS
IXFV18N90P ..IXTA220N055T7
IXTA220N075T ..IXTH31N15MA
IXTH31N15MB ..IXTP15N25MB
IXTP15N30MA ..IXTR170P10P
IXTR200N10P ..JANSR2N7272
JANSR2N7275 ..KMB2D0N60SA
KMB3D0P30SA ..KU054N03D
KU056N03Q ..MTB20N03Q8
MTB20N06J3 ..MTN2302V3
MTN2304M3 ..MTP4411M3
MTP4411Q8 ..NTA4001N
NTA4151P ..NTMS5838NL
NTMS5P02 ..PHP50N03LT
PHP50N06LT ..PSMN045-80YS
PSMN050-80PS ..RF1K49093
RF1K49154 ..RJK0391DPA
RJK0392DPA ..RQA0009SXAQS
RQA0009TXDQS ..SDF10N100JED
SDF10N100SXH ..SFS9630
SFS9634 ..SMG2390N
SMG2391P ..SML50B22
SML50B26 ..SPD50P03LG
SPI07N60C3 ..SSG4842N
SSG4874N ..SSM3K310T
SSM3K311T ..SSPS7332N
SSPS7333P ..STB9NK60ZD
STB9NK70Z-1 ..STD90N03L
STD90N03L-1 ..STHV82FI
STI10N62K3 ..STP17NK40ZFP
STP180N10F3 ..STP60N05FI
STP60N06 ..STV18N20
STV240N75F3 ..TJ40S04M3L
TJ50S06M3L ..TK9A55DA
TK9A60D ..TPCA8064-H
TPCA8065-H ..UT2305
UT2305A ..WTK6680
WTK9410 ..ZXMP3F36N8
ZXMP3F37DN8 ..ZXMS6006SG
 
IRFZ44N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFZ44N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFZ44N

Type of IRFZ44N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 83

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 41

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFZ44N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.024

Package: TO220AB

Equivalent transistors for IRFZ44N

IRFZ44N PDF doc:

1.1. irfz44ns_1.pdf Size:57K _philips

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device features very Ptot Total power dissipation 110 W low on-state resistance and has Tj Junction temperature 175 ?C integral zener diodes giving ESD RDS(ON) Drain-source on-state 22 m? protection up to 2kV. It is intended for resistance VGS = 10 V use in switched mode power supplies and general purpose switching applications. PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source vo

1.2. irfz44n_1.pdf Size:52K _philips

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-state resistance Ptot Total power dissipation 110 W and has integral zener diodes giving Tj Junction temperature 175 ?C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 22 m? intended for use in switched mode resistance VGS = 10 V power supplies and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drai

1.3. irfz44ns_1.pdf Size:57K _international_rectifier

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device features very Ptot Total power dissipation 110 W low on-state resistance and has Tj Junction temperature 175 ?C integral zener diodes giving ESD RDS(ON) Drain-source on-state 22 m? protection up to 2kV. It is intended for resistance VGS = 10 V use in switched mode power supplies and general purpose switching applications. PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source vo

1.4. irfz44ns.pdf Size:151K _international_rectifier

IRFZ44N
IRFZ44N
PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET® Power MOSFET Low-profile through-hole (IRFZ44NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175? Description G Advanced HEXFET® Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, S combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable D 2 Pak TO-262 for high current applications because of its low internal

1.5. irfz44n_1.pdf Size:52K _international_rectifier

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-state resistance Ptot Total power dissipation 110 W and has integral zener diodes giving Tj Junction temperature 175 ?C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 22 m? intended for use in switched mode resistance VGS = 10 V power supplies and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drai

1.6. irfz44n.pdf Size:100K _international_rectifier

IRFZ44N
IRFZ44N
PD - 94053 IRFZ44N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 17.5m? G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C

1.7. irfz44n.pdf Size:145K _inchange_semiconductor

IRFZ44N
IRFZ44N
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 49 A IDM Drain Current-Single Pluse (tp?10?s) 160 A PD Total Dissipation @TC=25? 94 W Max. Operating Junction Temperature 175 ? TJ Storage Temperature -55~175 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARA

See also transistors datasheet: IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 , IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , 2SK2837 , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL .

Keywords

 IRFZ44N Datasheet  IRFZ44N Datenblatt  IRFZ44N RoHS  IRFZ44N Distributor
 IRFZ44N Application Notes  IRFZ44N Component  IRFZ44N Circuit  IRFZ44N Schematic
 IRFZ44N Equivalent  IRFZ44N Cross Reference  IRFZ44N Data Sheet  IRFZ44N Fiche Technique

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