MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRFZ44N
  IRFZ44N
  IRFZ44N
 
IRFZ44N
  IRFZ44N
  IRFZ44N
 
IRFZ44N
  IRFZ44N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP09N20H-HF
AP09N20J-HF ..AP2732GK
AP2761I-A ..AP4513GH-A
AP4513GM-HF ..AP85U03GH-HF
AP85U03GM-HF ..AP95T08GP
AP95T10AGI-HF ..APT1003R5BN
APT1003R5CN ..AUIRF1324S
AUIRF1324S-7P ..AUIRL1404Z
AUIRL1404ZL ..BFL4001
BFL4004 ..BLS6G2731S-120
BLS6G2731S-130 ..BSO303PH
BSO303SPH ..BUK545-100A
BUK545-100B ..BUK7908-40AIE
BUK7909-75AIE ..BUP67
BUP68 ..CEB84A4
CEB85A3 ..CEM6188
CEM6426 ..CEU4204
CEU4269 ..DMN5L06DWK
DMN5L06K ..FCH76N60NF
FCI25N60N_F102 ..FDC638APZ
FDC638P ..FDH3632
FDH3632 ..FDMS7672
FDMS7672 ..FDPF12N60NZ
FDPF13N50FT ..FDS8870
FDS8870 ..FQA40N25
FQA44N30 ..FQP3N80C
FQP3P20 ..FRK260H
FRK260R ..FW274
FW282 ..H7P1002DS
H7P1006MD90TZ ..HAT2266H
HAT2267H ..HUF76443P3
HUF76443S3S ..IPB60R099CP
IPB60R099CPA ..IPG20N04S4-09
IPG20N04S4-12 ..IPP180N10N3G
IPP200N15N3G ..IRC830-008
IRC8305 ..IRF530FI
IRF530N ..IRF7241
IRF730 ..IRF820AL
IRF820AS ..IRFB59N10D
IRFB61N15D ..IRFI9540N
IRFI9620G ..IRFP470
IRFP4710 ..IRFS352
IRFS353 ..IRFU024N
IRFU025 ..IRL2203N
IRL2203NL ..IRLR120N
IRLR130A ..IXFB62N80Q3
IXFB70N60Q2 ..IXFK100N25
IXFK102N30P ..IXFN32N100Q3
IXFN32N120 ..IXFT26N50Q
IXFT26N60P ..IXKP13N60C5M
IXKP20N60C5 ..IXTH140P05T
IXTH14N100 ..IXTM15N60
IXTM20N60 ..IXTQ160N075T
IXTQ160N085T ..IXTY08N100P
IXTY08N50D2 ..KHB4D0N65F2
KHB4D0N65P ..KP750B
KP750B1 ..MPF102
MPF4393 ..MTE20N10FP
MTE50N10FP ..MTNK5C3
MTNK5N3 ..NDP6051L
NDP6060 ..NTLJS3113P
NTLJS4114N ..PHB8N50E
PHB8ND50E ..PMZ760SN
PN4091 ..R6006ANX
R6008ANX ..RFT2P03L
RFT3055LE ..RJK6012DPE
RJK6013DPE ..RW1A030AP
RW1C015UN ..SE3406
SE3407 ..SIF2N65C
SIF2N65D ..SML20L100
SML20S56 ..SPA08N80C3
SPA11N60C3 ..SSE90N08-08
SSE90N10-14 ..SSM3J313T
SSM3J314T ..SSM6P25TU
SSM6P26TU ..STB25NM60ND
STB26NM60N ..STD4NK50Z-1
STD4NK50ZD ..STFI20NK50Z
STFW12N120K5 ..STP10N62K3
STP10NA40 ..STP4N150
STP4N20 ..STS5PF30L
STS6NF20V ..STY60NM50
STY60NM60 ..TK4P60DB
TK50F15J1 ..TPC8213-H
TPC8214-H ..TPCS8303
TPCT4201 ..UTT4425
UTT4815 ..ZXMN2088DE6
ZXMN20B28K ..ZXMS6006SG
 
IRFZ44N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFZ44N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFZ44N

Type of IRFZ44N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 83

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 41

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFZ44N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.024

Package: TO220AB

Equivalent transistors for IRFZ44N

IRFZ44N PDF doc:

1.1. irfz44ns_1.pdf Size:57K _philips

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device features very Ptot Total power dissipation 110 W low on-state resistance and has Tj Junction temperature 175 ?C integral zener diodes giving ESD RDS(ON) Drain-source on-state 22 m? protection up to 2kV. It is intended for resistance VGS = 10 V use in switched mode power supplies and general purpose switching applications. PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source vo

1.2. irfz44n_1.pdf Size:52K _philips

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-state resistance Ptot Total power dissipation 110 W and has integral zener diodes giving Tj Junction temperature 175 ?C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 22 m? intended for use in switched mode resistance VGS = 10 V power supplies and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drai

1.3. irfz44ns_1.pdf Size:57K _international_rectifier

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device features very Ptot Total power dissipation 110 W low on-state resistance and has Tj Junction temperature 175 ?C integral zener diodes giving ESD RDS(ON) Drain-source on-state 22 m? protection up to 2kV. It is intended for resistance VGS = 10 V use in switched mode power supplies and general purpose switching applications. PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source vo

1.4. irfz44ns.pdf Size:151K _international_rectifier

IRFZ44N
IRFZ44N
PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET® Power MOSFET Low-profile through-hole (IRFZ44NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175? Description G Advanced HEXFET® Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, S combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable D 2 Pak TO-262 for high current applications because of its low internal

1.5. irfz44n_1.pdf Size:52K _international_rectifier

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-state resistance Ptot Total power dissipation 110 W and has integral zener diodes giving Tj Junction temperature 175 ?C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 22 m? intended for use in switched mode resistance VGS = 10 V power supplies and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drai

1.6. irfz44n.pdf Size:100K _international_rectifier

IRFZ44N
IRFZ44N
PD - 94053 IRFZ44N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 17.5m? G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C

1.7. irfz44n.pdf Size:145K _inchange_semiconductor

IRFZ44N
IRFZ44N
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 49 A IDM Drain Current-Single Pluse (tp?10?s) 160 A PD Total Dissipation @TC=25? 94 W Max. Operating Junction Temperature 175 ? TJ Storage Temperature -55~175 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARA

See also transistors datasheet: IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 , IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , 2SK2837 , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL .

Keywords

 IRFZ44N Datasheet  IRFZ44N Datenblatt  IRFZ44N RoHS  IRFZ44N Distributor
 IRFZ44N Application Notes  IRFZ44N Component  IRFZ44N Circuit  IRFZ44N Schematic
 IRFZ44N Equivalent  IRFZ44N Cross Reference  IRFZ44N Data Sheet  IRFZ44N Fiche Technique

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