MOSFET Datasheet


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IRFZ44N
  IRFZ44N
  IRFZ44N
 
IRFZ44N
  IRFZ44N
  IRFZ44N
 
IRFZ44N
  IRFZ44N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB150N10
FDB15N50 ..FDD8778
FDD8780 ..FDMS8460
FDMS86101 ..FDS4435BZ
FDS4435BZ_F085 ..FK20VS-5
FK20VS-6 ..FQP16N25
FQP17N40 ..FRE460H
FRE460R ..FSL430D
FSL430R ..H7N0312LD
H7N0312LM ..HAT2187WP
HAT2188WP ..HUF76132P3
HUF76132S3S ..IPB120N06S4-H1
IPB123N10N3G ..IPD60R600CP
IPD60R600E6 ..IPP076N12N3G
IPP080N03LG ..IRC150
IRC220 ..IRF3711ZS
IRF3717 ..IRF6725M
IRF6726M ..IRF7755G
IRF7756G ..IRFB3207Z
IRFB3207ZG ..IRFI4410ZG
IRFI460 ..IRFP352
IRFP353 ..IRFS231
IRFS232 ..IRFSL3806
IRFSL38N20D ..IRFZ34NS
IRFZ35 ..IRLM014A
IRLM110A ..IXBH20N160
IXBH40N140 ..IXFH58N20Q
IXFH5N100P ..IXFN102N30P
IXFN106N20 ..IXFR64N50Q3
IXFR64N60P ..IXFX52N60Q2
IXFX55N50 ..IXTC36P15P
IXTC62N15P ..IXTK150N15P
IXTK160N20 ..IXTP60N28TM-A
IXTP62N15P ..IXTV22N60PS
IXTV230N085T ..KF70N06P
KF7N50D ..KP731V
KP737A ..MMBF4391L
MMBF4392 ..MTD6N15
MTD6N20E ..MTN5N60I3
MTN5N60J3 ..NDD04N60Z
NDD05N50Z ..NTGD3148N
NTGD4161P ..OM5N100SA
OM6N100SA ..PML260SN
PML340SN ..PSMN7R0-100XS
PSMN7R0-30YL ..RFL1N10L
RFP10P03L ..RJK2006DPF
RJK2006DPJ ..RSQ045N03
RSR010N10 ..SDF350
SDF360JEA ..SGM0410S
SGM2305A ..SMK0825F
SMK0825FC ..SML6040HN
SML6045AN ..SPD30N03S2L-10G
SPD30N03S2L-20G ..SSG4801
SSG4825P ..SSM3K17FU
SSM3K301T ..SSP7N80A
SSP80N06A ..STB7N52K3
STB7NK80Z ..STD6NF10
STD6NK50Z ..STH14N50
STH14N50FI ..STM4605
STM4615 ..STP24NM60N
STP24NM65N ..STP7N20
STP7N20FI ..STT4660
STT468A ..STW14NK50Z
STW15N50 ..TK15H50C
TK15J50D ..TPC8039-H
TPC8040-H ..TPCF8004
TPCF8101 ..UT6401
UT6402 ..ZVNL120A
ZVNL120G ..ZXMS6006SG
 
IRFZ44N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFZ44N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFZ44N

Type of IRFZ44N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 83

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 41

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFZ44N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.024

Package: TO220AB

Equivalent transistors for IRFZ44N

IRFZ44N PDF doc:

1.1. irfz44ns_1.pdf Size:57K _philips

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device features very Ptot Total power dissipation 110 W low on-state resistance and has Tj Junction temperature 175 ?C integral zener diodes giving ESD RDS(ON) Drain-source on-state 22 m? protection up to 2kV. It is intended for resistance VGS = 10 V use in switched mode power supplies and general purpose switching applications. PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source vo

1.2. irfz44n_1.pdf Size:52K _philips

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-state resistance Ptot Total power dissipation 110 W and has integral zener diodes giving Tj Junction temperature 175 ?C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 22 m? intended for use in switched mode resistance VGS = 10 V power supplies and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drai

1.3. irfz44ns_1.pdf Size:57K _international_rectifier

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device features very Ptot Total power dissipation 110 W low on-state resistance and has Tj Junction temperature 175 ?C integral zener diodes giving ESD RDS(ON) Drain-source on-state 22 m? protection up to 2kV. It is intended for resistance VGS = 10 V use in switched mode power supplies and general purpose switching applications. PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source vo

1.4. irfz44ns.pdf Size:151K _international_rectifier

IRFZ44N
IRFZ44N
PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET® Power MOSFET Low-profile through-hole (IRFZ44NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175? Description G Advanced HEXFET® Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, S combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable D 2 Pak TO-262 for high current applications because of its low internal

1.5. irfz44n_1.pdf Size:52K _international_rectifier

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-state resistance Ptot Total power dissipation 110 W and has integral zener diodes giving Tj Junction temperature 175 ?C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 22 m? intended for use in switched mode resistance VGS = 10 V power supplies and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drai

1.6. irfz44n.pdf Size:100K _international_rectifier

IRFZ44N
IRFZ44N
PD - 94053 IRFZ44N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 17.5m? G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C

1.7. irfz44n.pdf Size:145K _inchange_semiconductor

IRFZ44N
IRFZ44N
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 49 A IDM Drain Current-Single Pluse (tp?10?s) 160 A PD Total Dissipation @TC=25? 94 W Max. Operating Junction Temperature 175 ? TJ Storage Temperature -55~175 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARA

See also transistors datasheet: IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 , IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , 2SK2837 , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL .

Keywords

 IRFZ44N Datasheet  IRFZ44N Datenblatt  IRFZ44N RoHS  IRFZ44N Distributor
 IRFZ44N Application Notes  IRFZ44N Component  IRFZ44N Circuit  IRFZ44N Schematic
 IRFZ44N Equivalent  IRFZ44N Cross Reference  IRFZ44N Data Sheet  IRFZ44N Fiche Technique

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