MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRFZ44N
  IRFZ44N
  IRFZ44N
 
IRFZ44N
  IRFZ44N
  IRFZ44N
 
IRFZ44N
  IRFZ44N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AP18T10GH-HF
AP18T10GI ..AP4036AGYT-HF
AP4085I ..AP55T06GS-HF
AP55T10GH-HF ..AP9450GYT-HF
AP9451GG-HF ..AP9970GK-HF
AP9970GP-HF ..APT40M35PVR
APT40M42JN ..AUIRFB3206
AUIRFB3207 ..BF1208
BF1208D ..BLF6G15L-500H
BLF6G15LS-500H ..BSC052N03LS
BSC052N03SG ..BSS84L
BSS84LT1 ..BUK7215-55A
BUK72150-55A ..BUK9520-55
BUK9520-55A ..BUZ902DP
BUZ902P ..CEDF634
CEDF640 ..CEP3100
CEP3120 ..DMC4028SSD
DMC4040SSD ..EC3A04B
EC4401C ..FDB120N10
FDB12N50F ..FDD5N50
FDD5N50F ..FDMC7660
FDMC7660 ..FDP025N06
FDP030N06 ..FDS3992
FDS3992 ..FDV305N
FDY1002PZ ..FQD12P10TM_F085
FQD13N06 ..FQPF5N40
FQPF5N40 ..FRS140D
FRS140H ..H12N65F
H2301N ..HAT2033R
HAT2036R ..HUF75307D3
HUF75307D3S ..IPA65R600E6
IPA65R660CFD ..IPD068P03L3G
IPD075N03LG ..IPI60R385CP
IPI60R520CP ..IPP80N06S2-09
IPP80N06S2-H5 ..IRF1607
IRF1902 ..IRF635
IRF636A ..IRF7416Q
IRF741FI ..IRF9520N
IRF9520NL ..IRFF310
IRFF320 ..IRFP044
IRFP044N ..IRFR224A
IRFR2307Z ..IRFS721
IRFS722 ..IRFU9120N
IRFU9121 ..IRL630S
IRL631 ..IRLU2908
IRLU3103 ..IXFH150N17T
IXFH150N17T2 ..IXFK48N60Q3
IXFK50N50 ..IXFP4N100P
IXFP4N100PM ..IXFV26N60P
IXFV26N60PS ..IXTA26P20P
IXTA28P065T ..IXTH36P10
IXTH36P15P ..IXTP180N085T
IXTP180N10T ..IXTT100N25P
IXTT10N100D ..JANSR2N7402
JANSR2N7403 ..KMB6D0DN30QA
KMB6D0DN30QB ..KU2307K
KU2307Q ..MTB30N06J3
MTB30N06Q8 ..MTN2328N3
MTN2342N3 ..MTP4835V8
MTP50P03HDL ..NTB5605P
NTB60N06 ..NTP6413AN
NTR0202PL ..PHP7N60E
PHP80N06LT ..PSMN102-200Y
PSMN130-200D ..RF1S30P05SM
RF1S30P06SM ..RJK03C0DPA
RJK03C1DPB ..RQJ0303PGDQA
RQJ0304DQDQA ..SDF120JAB-U
SDF120JDA-D ..SFT1423
SFT1431 ..SMG5409
SMK0160 ..SML50L47
SML50M60BFN ..SPI15N60C3
SPI15N60CFD ..SSG4940N
SSG4940NC ..SSM3K36FS
SSM3K36MFV ..SSR3055A
SSR3055LA ..STD10NM60ND
STD10NM65N ..STE150N10
STE15N100 ..STI24NM65N
STI26NM60N ..STP19N06
STP19N06FI ..STP60NS04ZB
STP62NS04Z ..STV4NA60
STV4NA80 ..TK100F06K3
TK10A50D ..TPC6008-H
TPC6009-H ..TPCA8102
TPCA8103 ..UT2N10
UT3006 ..WTU1333
WTX1012 ..ZXMP6A17E6
ZXMP6A17G ..ZXMS6006SG
 
IRFZ44N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFZ44N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFZ44N

Type of IRFZ44N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 83

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 41

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFZ44N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.024

Package: TO220AB

Equivalent transistors for IRFZ44N

IRFZ44N PDF doc:

1.1. irfz44ns_1.pdf Size:57K _philips

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device features very Ptot Total power dissipation 110 W low on-state resistance and has Tj Junction temperature 175 ?C integral zener diodes giving ESD RDS(ON) Drain-source on-state 22 m? protection up to 2kV. It is intended for resistance VGS = 10 V use in switched mode power supplies and general purpose switching applications. PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source vo

1.2. irfz44n_1.pdf Size:52K _philips

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-state resistance Ptot Total power dissipation 110 W and has integral zener diodes giving Tj Junction temperature 175 ?C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 22 m? intended for use in switched mode resistance VGS = 10 V power supplies and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drai

1.3. irfz44ns_1.pdf Size:57K _international_rectifier

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device features very Ptot Total power dissipation 110 W low on-state resistance and has Tj Junction temperature 175 ?C integral zener diodes giving ESD RDS(ON) Drain-source on-state 22 m? protection up to 2kV. It is intended for resistance VGS = 10 V use in switched mode power supplies and general purpose switching applications. PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source vo

1.4. irfz44ns.pdf Size:151K _international_rectifier

IRFZ44N
IRFZ44N
PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET® Power MOSFET Low-profile through-hole (IRFZ44NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175? Description G Advanced HEXFET® Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, S combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable D 2 Pak TO-262 for high current applications because of its low internal

1.5. irfz44n_1.pdf Size:52K _international_rectifier

IRFZ44N
IRFZ44N
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-state resistance Ptot Total power dissipation 110 W and has integral zener diodes giving Tj Junction temperature 175 ?C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 22 m? intended for use in switched mode resistance VGS = 10 V power supplies and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drai

1.6. irfz44n.pdf Size:100K _international_rectifier

IRFZ44N
IRFZ44N
PD - 94053 IRFZ44N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 17.5m? G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C

1.7. irfz44n.pdf Size:145K _inchange_semiconductor

IRFZ44N
IRFZ44N
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 49 A IDM Drain Current-Single Pluse (tp?10?s) 160 A PD Total Dissipation @TC=25? 94 W Max. Operating Junction Temperature 175 ? TJ Storage Temperature -55~175 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARA

See also transistors datasheet: IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 , IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , 2SK2837 , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL .

Keywords

 IRFZ44N Datasheet  IRFZ44N Datenblatt  IRFZ44N RoHS  IRFZ44N Distributor
 IRFZ44N Application Notes  IRFZ44N Component  IRFZ44N Circuit  IRFZ44N Schematic
 IRFZ44N Equivalent  IRFZ44N Cross Reference  IRFZ44N Data Sheet  IRFZ44N Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages