All MOSFET. IRFZ44N Datasheet

 

IRFZ44N Datasheet and Replacement


   Type Designator: IRFZ44N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 49 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 63(max) nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
   Package: TO220AB
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IRFZ44N Datasheet (PDF)

 ..1. Size:150K  international rectifier
irfz44npbf.pdf pdf_icon

IRFZ44N

PD - 94787IRFZ44NPbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 17.5m Fully Avalanche RatedG Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely

 ..2. Size:100K  international rectifier
irfz44n.pdf pdf_icon

IRFZ44N

PD - 94053IRFZ44NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 17.5mG Fast Switching Fully Avalanche RatedID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

 ..3. Size:52K  philips
irfz44n 1.pdf pdf_icon

IRFZ44N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s

 ..4. Size:1138K  cn evvo
irfz44n.pdf pdf_icon

IRFZ44N

IRFZ44N 60V N-Channel MOSFETDGeneral DescriptionThe IRFZ44NS/IRFZ44N uses advanced trench technologyand design to provide excellent RDS(ON) with low gate cha rg e.GIt ca n be used in a wide variety of applications.SN-Channel MOSFETProduct Summary60VVDS ID (at VGS=-10V) 50A RDS(ON) (at VGS=10V)

Datasheet: IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 , IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , 60N06 , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL .

Keywords - IRFZ44N MOSFET datasheet

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