IRFZ44N MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFZ44N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 94 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 49 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 63(max) nC
Rise Time (tr): 60 nS
Drain-Source Capacitance (Cd): 360 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0175 Ohm
Package: TO220AB
IRFZ44N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFZ44N Datasheet (PDF)
..1. irfz44n 1.pdf 
Size:52K _international_rectifier
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s
..2. irfz44n.pdf Size:100K _international_rectifier
PD - 94053IRFZ44NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 17.5mG Fast Switching Fully Avalanche RatedID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan
..3. irfz44n 1.pdf Size:52K _philips
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s
..4. irfz44n.pdf Size:100K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.032(Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor
0.1. irfz44ns 1.pdf Size:57K _international_rectifier
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat
0.2. irfz44npbf.pdf Size:226K _international_rectifier
PD - 94787BIRFZ44NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 17.5ml Fully Avalanche RatedGl Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveex
0.3. irfz44ns irfz44nl.pdf Size:151K _international_rectifier
PD - 94153IRFZ44NSIRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0175DescriptionGAdvanced HEXFET Power MOSFETs from InternationalID = 49ARectifier utilize advanced processing techniques to achievee
0.4. irfz44nlpbf irfz44nspbf.pdf Size:334K _international_rectifier
IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D
0.5. irfz44ns 1.pdf Size:57K _philips
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat
0.6. irfz44npbf.pdf Size:150K _infineon
PD - 94787IRFZ44NPbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 17.5m Fully Avalanche RatedG Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely
0.7. irfz44nspbf irfz44nlpbf.pdf Size:334K _infineon
IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D
0.8. lirfz44n.pdf Size:252K _lrc
LESHAN RADIO COMPANY, LTD.55V N-Channel Mode MOSFET VDS=55V LIRFZ44NRDS(ON), Vgs@10V, Ids@25A =17.5m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche RatedTO-220DGSAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 49ID @ TC = 10
0.9. irfz44npbf.pdf Size:824K _cn_vbsemi
IRFZ44NPBFwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim
0.10. irfz44ns.pdf Size:1459K _cn_vbsemi
IRFZ44NSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source
0.11. irfz44ns.pdf Size:257K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFZ44NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4435 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
