IRFZ44N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 94787BIRFZ44NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 17.5ml Fully Avalanche RatedGl Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveex

PD - 94053IRFZ44NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 17.5mG Fast Switching Fully Avalanche RatedID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s

PD - 94787IRFZ44NPbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 17.5m Fully Avalanche RatedG Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely

IRFZ44NPBFwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50DTO-220ABGSDSGN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.032(Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

PD - 94153IRFZ44NSIRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0175DescriptionGAdvanced HEXFET Power MOSFETs from InternationalID = 49ARectifier utilize advanced processing techniques to achievee

PD-96391AAUTOMOTIVE GRADEAUIRFZ44NSAUIRFZ44NLHEXFET Power MOSFETFeaturesD Advanced Planar TechnologyV(BR)DSS55V Low On-Resistance Dynamic dV/dT RatingRDS(on) max.17.5m 175C Operating Temperature G Fast SwitchingS ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDDescription

AUTOMOTIVE GRADE AUIRFZ44N Features HEXFET Power MOSFET Advanced Planar Technology VDSS Low On-Resistance 55V Dynamic dv/dt Rating RDS(on) max. 175C Operating Temperature 17.5m Fast Switching ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Desc

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

LESHAN RADIO COMPANY, LTD.55V N-Channel Mode MOSFET VDS=55V LIRFZ44NRDS(ON), Vgs@10V, Ids@25A =17.5m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche RatedTO-220DGSAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 49ID @ TC = 10

IRFZ44NSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source

isc N-Channel MOSFET Transistor IRFZ44NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS