STF2458A MOSFET. Datasheet pdf. Equivalent
Type Designator: STF2458A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.67 W
Maximum Drain-Source Voltage |Vds|: 24 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 10 A
Total Gate Charge (Qg): 34 nC
Drain-Source Capacitance (Cd): 274 pF
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: TDFN2X5
STF2458A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STF2458A Datasheet (PDF)
stf2458a.pdf
GreerrPPrPrProSTF2458AaS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.10.0 @ VGS=4.5VSuface Mount Package.10.5 @ VGS=4.0V24V 10A 11.0 @ VGS=3.7V ESD Protected.12.0 @ VGS=3.1V15.5 @ VGS=2.5VBott
stf2458.pdf
GreenProductSTF2458aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.9.5 @ VGS=4.5VSuface Mount Package.10.2 @ VGS=4.0V 24V 10A 10.4 @ VGS=3.7V ESD Protected.11.5 @ VGS=3.1V14.0 @ VGS=2.5VG2Bottom Drain
stf2459a.pdf
GreenProductSTF2459AaS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.6.2 @ VGS=10VSuface Mount Package.7.5 @ VGS=4.5V ESD Protected.8.0 @ VGS=4.0V 24V 12A8.6 @ VGS=3.7V10.3 @ VGS=3.1V16.3 @ VGS=2.5V
stf2456.pdf
GreerrPPrPrProdSTF2456aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.18.5 @ VGS=4.5VSuface Mount Package.20.0 @ VGS=4.0V24V 7.0A 20.5 @ VGS=3.7V ESD Protected.22.5 @ VGS=3.1V28.0 @ VGS=2.5VG2
stf2454a.pdf
GreenProductSTF2454AaS mHop Microelectronics C orp.Ver 3.2Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.14.0 @ VGS=4.5VSuface Mount Package.14.3 @ VGS=4.0V24V 8.6A 14.5 @ VGS=3.7V ESD Protected.16.5 @ VGS=3.1V20.0 @ VGS=2.5VBottom Drain Co
stf2454.pdf
GreenProductSTF2454aS mHop Microelectronics C orp.Ver 2.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.14.0 @ VGS=4.5VSuface Mount Package.14.3 @ VGS=4.0V24V 8.0A 14.5 @ VGS=3.7V ESD Protected.16.5 @ VGS=3.1V20.0 @ VGS=2.5VG2Bottom Drain
stf2455.pdf
GreenProductSTF2455aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.6.2 @ VGS=4.5VSuface Mount Package.6.3 @ VGS=4.0V 24V 13A 6.5 @ VGS=3.7V ESD Protected.7.0 @ VGS=3.1V8.5 @ VGS=2.5VD DDDG GST D
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SP632S | FDS6692A | FDS3572 | FDS6298 | FDS8880
