STF2458A MOSFET Datasheet: N-Ch, 24V, 10A. Full specification with pinout and replacement list

STF2458A Specs and Replacement

Type Designator: STF2458A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.67 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 274 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TDFN2X5

STF2458A substitution

- MOSFET ⓘ Cross-Reference Search

STF2458A datasheet

..1. Size:87K samhop
stf2458a.pdf pdf_icon

Gree r r P Pr Pr Pro STF2458A a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 10.0 @ VGS=4.5V Suface Mount Package. 10.5 @ VGS=4.0V 24V 10A 11.0 @ VGS=3.7V ESD Protected. 12.0 @ VGS=3.1V 15.5 @ VGS=2.5V Bott... See More ⇒

7.1. Size:100K samhop
stf2458.pdf pdf_icon

Green Product STF2458 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 9.5 @ VGS=4.5V Suface Mount Package. 10.2 @ VGS=4.0V 24V 10A 10.4 @ VGS=3.7V ESD Protected. 11.5 @ VGS=3.1V 14.0 @ VGS=2.5V G2 Bottom Drain ... See More ⇒

8.1. Size:96K samhop
stf2459a.pdf pdf_icon

Green Product STF2459A a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 6.2 @ VGS=10V Suface Mount Package. 7.5 @ VGS=4.5V ESD Protected. 8.0 @ VGS=4.0V 24V 12A 8.6 @ VGS=3.7V 10.3 @ VGS=3.1V 16.3 @ VGS=2.5V ... See More ⇒

8.2. Size:92K samhop
stf2456.pdf pdf_icon

Gree r r P Pr Pr Prod STF2456 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 18.5 @ VGS=4.5V Suface Mount Package. 20.0 @ VGS=4.0V 24V 7.0A 20.5 @ VGS=3.7V ESD Protected. 22.5 @ VGS=3.1V 28.0 @ VGS=2.5V G2 ... See More ⇒