All MOSFET. FDS6294 Datasheet

 

FDS6294 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDS6294
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 3 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 13 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 10 nC
   Rise Time (tr): 4 nS
   Drain-Source Capacitance (Cd): 323 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0113 Ohm
   Package: SO-8

 FDS6294 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS6294 Datasheet (PDF)

 ..1. Size:367K  fairchild semi
fds6294.pdf

FDS6294
FDS6294

February 2007tmFDS6294 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers.

 ..2. Size:140K  onsemi
fds6294.pdf

FDS6294
FDS6294

November 2003FDS629430V N-Channel Fast Switching PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for

 8.1. Size:598K  fairchild semi
fds6299s.pdf

FDS6294
FDS6294

November 2007tmFDS6299S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6299S is designed to replace a single SO-8 21 A, 30 V. RDS(ON) = 3.9 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 5.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

 8.2. Size:353K  fairchild semi
fds6298.pdf

FDS6294
FDS6294

April 2007FDS6298 tm30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 12 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been

 8.3. Size:281K  onsemi
fds6298.pdf

FDS6294
FDS6294

FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET Features General Description 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V This N-Channel MOSFET has been designed RDS(ON) = 12 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC Low gate charge (10nC @ VGS=5V) converters using either synchronous or conventional switching PWM contro

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDS5672 | FDS8882 | IRF540

 

 
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