FDS6294 Datasheet. Specs and Replacement

Type Designator: FDS6294  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 323 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm

Package: SO-8

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FDS6294 datasheet

 ..1. Size:367K  fairchild semi
 fds6294.pdf pdf_icon

FDS6294

February 2007 tm FDS6294 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. ... See More ⇒

 ..2. Size:140K  onsemi
 fds6294.pdf pdf_icon

FDS6294

November 2003 FDS6294 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for ... See More ⇒

 8.1. Size:598K  fairchild semi
 fds6299s.pdf pdf_icon

FDS6294

November 2007 tm FDS6299S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6299S is designed to replace a single SO-8 21 A, 30 V. RDS(ON) = 3.9 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 5.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low ... See More ⇒

 8.2. Size:353K  fairchild semi
 fds6298.pdf pdf_icon

FDS6294

April 2007 FDS6298 tm 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 12 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been ... See More ⇒

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Detailed specifications: STB434S, FDS4897C, STB432S, FDS4935A, FDS4935BZ, FDS5351, FDS5670, FDS5672, 8N65, STB416D, FDS6298, STB31L01, FDS6574A, FDS6670AS, STA6968, FDS6673BZ, FDS6673BZF085

Keywords - FDS6294 MOSFET specs

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