Справочник MOSFET. FDS6294

 

FDS6294 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS6294
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 323 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0113 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для FDS6294

 

 

FDS6294 Datasheet (PDF)

 ..1. Size:367K  fairchild semi
 fds6294.pdf

FDS6294 FDS6294

February 2007tmFDS6294 30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers.

 ..2. Size:140K  onsemi
 fds6294.pdf

FDS6294 FDS6294

November 2003FDS629430V N-Channel Fast Switching PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 14.4 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for

 8.1. Size:598K  fairchild semi
 fds6299s.pdf

FDS6294 FDS6294

November 2007tmFDS6299S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6299S is designed to replace a single SO-8 21 A, 30 V. RDS(ON) = 3.9 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 5.1 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

 8.2. Size:353K  fairchild semi
 fds6298.pdf

FDS6294 FDS6294

April 2007FDS6298 tm30V N-Channel Fast Switching PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 12 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been

 8.3. Size:281K  onsemi
 fds6298.pdf

FDS6294 FDS6294

FDS6298 30V N-Channel Fast Switching PowerTrench MOSFET Features General Description 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V This N-Channel MOSFET has been designed RDS(ON) = 12 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC Low gate charge (10nC @ VGS=5V) converters using either synchronous or conventional switching PWM contro

Другие MOSFET... STB434S , FDS4897C , STB432S , FDS4935A , FDS4935BZ , FDS5351 , FDS5670 , FDS5672 , AO4468 , STB416D , FDS6298 , STB31L01 , FDS6574A , FDS6670AS , STA6968 , FDS6673BZ , FDS6673BZF085 .

 

 
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