STA6610 Datasheet and Replacement
Type Designator: STA6610
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 7.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 13 nC
tr ⓘ - Rise Time: 14.4 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: PDIP8
STA6610 substitution
STA6610 Datasheet (PDF)
sta6610.pdf

S TA6610S amHop Microelectronics C orp.Nov.24 2006Dual N-Channel E nhancement Mode Field E ffect TransistorF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.23 @ VG S = 10VS urface Mount Package.30V7.6A35 @ VG S = 4.5VE S D Protected.D1 D1 D2 D28 7 6 5P DIP -81 1 2 3 4S 1 G 1
sta6611.pdf

STA6611SamHop Microelectronics Corp.Nov. 22, 2006Dual Enhancement Mode Field Effect Transistor ( N and P Channel)PRODUCT SUMMARY (N-Channel) (P-Channel)PRODUCT SUMMARYVDSS ID RDS(ON) ( m ) Max VDSS ID RDS(ON) ( m ) Max23 @ VGS = 10V 35 @ VGS = -10V-30V -6.6A30V 7.6A30 @ VGS = 4.5V 55 @ VGS = -4.5VD1 D1 D2 D28 7 6 5P DIP -81 1 2 3 4S 1 G 1 S 2 G 2ABSOLUTE
sta6620.pdf

S TA6620S amHop Microelectronics C orp.Nov. 24 2006Dual N-Channel E nhancement Mode Field E ffect TransistorF E ATUR E SPR ODUC T S UMMAR YS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.25 @ VG S = 10VS urface Mount Package.40V 7A42 @ VG S = 4.5VE S D Protected.D1 D1 D2 D28 7 6 5P DIP -81 2 3 41S 1 G 1 S
Datasheet: FDS6675BZ , FDS6676AS , STA6620 , FDS6679AZ , FDS6680AS , STA6611 , FDS6681Z , FDS6682 , IRF540 , FDS6690AS , STA4470 , FDS6692A , SP8651 , FDS6699S , SP8611 , FDS6892A , FDS6898A .
Keywords - STA6610 MOSFET datasheet
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