STA6610 Todos los transistores

 ..1. Size:114K  samhop
 sta6610.pdf

S TA6610 S amHop Microelectronics C orp. Nov.24 2006 Dual N-Channel E nhancement Mode Field E ffect Transistor F E ATUR E S PR ODUC T S UMMAR Y S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 23 @ VG S = 10V S urface Mount Package. 30V 7.6A 35 @ VG S = 4.5V E S D Protected. D1 D1 D2 D2 8 7 6 5 P DIP -8 1 1 2 3 4 S 1 G 1

 8.1. Size:177K  samhop
 sta6611.pdf

STA6611 SamHop Microelectronics Corp. Nov. 22, 2006 Dual Enhancement Mode Field Effect Transistor ( N and P Channel) PRODUCT SUMMARY (N-Channel) (P-Channel) PRODUCT SUMMARY VDSS ID RDS(ON) ( m ) Max VDSS ID RDS(ON) ( m ) Max 23 @ VGS = 10V 35 @ VGS = -10V -30V -6.6A 30V 7.6A 30 @ VGS = 4.5V 55 @ VGS = -4.5V D1 D1 D2 D2 8 7 6 5 P DIP -8 1 1 2 3 4 S 1 G 1 S 2 G 2 ABSOLUTE

 9.1. Size:113K  samhop
 sta6620.pdf

S TA6620 S amHop Microelectronics C orp. Nov. 24 2006 Dual N-Channel E nhancement Mode Field E ffect Transistor F E ATUR E S PR ODUC T S UMMAR Y S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 25 @ VG S = 10V S urface Mount Package. 40V 7A 42 @ VG S = 4.5V E S D Protected. D1 D1 D2 D2 8 7 6 5 P DIP -8 1 2 3 4 1 S 1 G 1 S