STA6610 Datasheet. Specs and Replacement
Type Designator: STA6610 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14.4 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: PDIP8
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STA6610 substitution
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STA6610 datasheet
sta6610.pdf
S TA6610 S amHop Microelectronics C orp. Nov.24 2006 Dual N-Channel E nhancement Mode Field E ffect Transistor F E ATUR E S PR ODUC T S UMMAR Y S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 23 @ VG S = 10V S urface Mount Package. 30V 7.6A 35 @ VG S = 4.5V E S D Protected. D1 D1 D2 D2 8 7 6 5 P DIP -8 1 1 2 3 4 S 1 G 1 ... See More ⇒
sta6611.pdf
STA6611 SamHop Microelectronics Corp. Nov. 22, 2006 Dual Enhancement Mode Field Effect Transistor ( N and P Channel) PRODUCT SUMMARY (N-Channel) (P-Channel) PRODUCT SUMMARY VDSS ID RDS(ON) ( m ) Max VDSS ID RDS(ON) ( m ) Max 23 @ VGS = 10V 35 @ VGS = -10V -30V -6.6A 30V 7.6A 30 @ VGS = 4.5V 55 @ VGS = -4.5V D1 D1 D2 D2 8 7 6 5 P DIP -8 1 1 2 3 4 S 1 G 1 S 2 G 2 ABSOLUTE ... See More ⇒
sta6620.pdf
S TA6620 S amHop Microelectronics C orp. Nov. 24 2006 Dual N-Channel E nhancement Mode Field E ffect Transistor F E ATUR E S PR ODUC T S UMMAR Y S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 25 @ VG S = 10V S urface Mount Package. 40V 7A 42 @ VG S = 4.5V E S D Protected. D1 D1 D2 D2 8 7 6 5 P DIP -8 1 2 3 4 1 S 1 G 1 S... See More ⇒
Detailed specifications: FDS6675BZ, FDS6676AS, STA6620, FDS6679AZ, FDS6680AS, STA6611, FDS6681Z, FDS6682, IRF1404, FDS6690AS, STA4470, FDS6692A, SP8651, FDS6699S, SP8611, FDS6892A, FDS6898A
Keywords - STA6610 MOSFET specs
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