FDS86140 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS86140
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 11.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 29 nC
Rise Time (tr): 5.6 nS
Drain-Source Capacitance (Cd): 440 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0098 Ohm
Package: SO-8
FDS86140 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS86140 Datasheet (PDF)
fds86140.pdf
March 2011FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 mFeatures General Description Max rDS(on) = 9.8 m at VGS = 10 V, ID = 11.2 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 16 m at VGS = 6 V, ID = 9 A Semiconductors advanced Power Trench process that has High performance trench technologh for extremely low rDS(on) been optimized f
fds86140.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds86141.pdf
July 2011FDS86141N-Channel Power Trench MOSFET 100 V, 7 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 6 V, ID = 5.5 Abeen especially tailored to minimize the on-state resistance and High performance
fds86106.pdf
July 2011FDS86106N-Channel Power Trench MOSFET 100 V, 3.4 A, 105 mFeatures General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 3.4 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) been optimized
fds86106.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: SP8076 , FDS6994S , SP8013 , FDS8447 , FDS8449 , FDS8449F085 , FDS86106 , SP8010E , P0903BDG , SP8009EL , FDS86141 , SP8005 , FDS86240 , FDS86242 , FDS86252 , FDS8638 , FDS8813NZ .
