March 2011FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 mFeatures General Description Max rDS(on) = 9.8 m at VGS = 10 V, ID = 11.2 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 16 m at VGS = 6 V, ID = 9 A Semiconductors advanced Power Trench process that has High performance trench technologh for extremely low rDS(on) been optimized f

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

July 2011FDS86141N-Channel Power Trench MOSFET 100 V, 7 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 6 V, ID = 5.5 Abeen especially tailored to minimize the on-state resistance and High performance

July 2011FDS86106N-Channel Power Trench MOSFET 100 V, 3.4 A, 105 mFeatures General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 3.4 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) been optimized

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur