FDS86140 Datasheet. Specs and Replacement

Type Designator: FDS86140  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.6 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm

Package: SO-8

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FDS86140 datasheet

 ..1. Size:250K  fairchild semi
 fds86140.pdf pdf_icon

FDS86140

March 2011 FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 m Features General Description Max rDS(on) = 9.8 m at VGS = 10 V, ID = 11.2 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 16 m at VGS = 6 V, ID = 9 A Semiconductor s advanced Power Trench process that has High performance trench technologh for extremely low rDS(on) been optimized f... See More ⇒

 ..2. Size:354K  onsemi
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FDS86140

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.1. Size:250K  fairchild semi
 fds86141.pdf pdf_icon

FDS86140

July 2011 FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 6 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and High performance ... See More ⇒

 8.1. Size:257K  fairchild semi
 fds86106.pdf pdf_icon

FDS86140

July 2011 FDS86106 N-Channel Power Trench MOSFET 100 V, 3.4 A, 105 m Features General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) been optimized ... See More ⇒

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Detailed specifications: SP8076, FDS6994S, SP8013, FDS8447, FDS8449, FDS8449F085, FDS86106, SP8010E, 13N50, SP8009EL, FDS86141, SP8005, FDS86240, FDS86242, FDS86252, FDS8638, FDS8813NZ

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