SP632S MOSFET. Datasheet pdf. Equivalent
Type Designator: SP632S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3.1 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 32 nC
Rise Time (tr): 27 nS
Drain-Source Capacitance (Cd): 144 pF
Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm
Package: DFN5X6
SP632S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SP632S Datasheet (PDF)
sp632s.pdf
GreenProductSP632SaS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.16 @ VGS=10VSuface Mount Package.60V 10A24 @ VGS=4.5VPIN 1 5 6 7 8DFN 5x6 1 2 3 4ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDS6298 | FDS8880 | FDS6692A | FDS3572