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SP632S Specs and Replacement

Type Designator: SP632S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 144 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: DFN5X6

SP632S substitution

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SP632S datasheet

 ..1. Size:99K  samhop
 sp632s.pdf pdf_icon

SP632S

Green Product SP632S a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 16 @ VGS=10V Suface Mount Package. 60V 10A 24 @ VGS=4.5V PIN 1 5 6 7 8 DFN 5x6 1 2 3 4 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwi... See More ⇒

Detailed specifications: SP8009EL, FDS86141, SP8005, FDS86240, FDS86242, FDS86252, FDS8638, FDS8813NZ, IRF1010E, FDS8817NZ, SP4412, FDS8840NZ, FDS8842NZ, FDS8858CZ, SP4401, SP3906, FDS8870

Keywords - SP632S MOSFET specs

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