All MOSFET. SP632S Datasheet

 

SP632S Datasheet and Replacement


   Type Designator: SP632S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 32 nC
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 144 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: DFN5X6
 

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SP632S Datasheet (PDF)

 ..1. Size:99K  samhop
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SP632S

GreenProductSP632SaS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.16 @ VGS=10VSuface Mount Package.60V 10A24 @ VGS=4.5VPIN 1 5 6 7 8DFN 5x6 1 2 3 4ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwi

Datasheet: SP8009EL , FDS86141 , SP8005 , FDS86240 , FDS86242 , FDS86252 , FDS8638 , FDS8813NZ , IRF530 , FDS8817NZ , SP4412 , FDS8840NZ , FDS8842NZ , FDS8858CZ , SP4401 , SP3906 , FDS8870 .

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