All MOSFET. SP632S Datasheet

 

SP632S MOSFET. Datasheet pdf. Equivalent


   Type Designator: SP632S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 144 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: DFN5X6

 SP632S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SP632S Datasheet (PDF)

 ..1. Size:99K  samhop
 sp632s.pdf

SP632S SP632S

GreenProductSP632SaS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.16 @ VGS=10VSuface Mount Package.60V 10A24 @ VGS=4.5VPIN 1 5 6 7 8DFN 5x6 1 2 3 4ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwi

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