FDS8870 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS8870
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 85 nC
Rise Time (tr): 48 nS
Drain-Source Capacitance (Cd): 900 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm
Package: SO-8
FDS8870 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS8870 Datasheet (PDF)
fds8870.pdf
April 2007tmFDS8870N-Channel PowerTrench MOSFET 30V, 18A, 4.2mFeatures General Description rDS(on) = 4.2m, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 4.9m, VGS = 4.5V, ID = 17Aeither synchronous or conventional switching PWM controllers. It has been optimized for l
fds8870.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds8876.pdf
April 2007tmFDS8876N-Channel PowerTrench MOSFET 30V, 12.5A, 8.2mFeatures General Description rDS(on) = 8.2m, VGS = 10V, ID = 12.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 10.2m, VGS = 4.5V, ID = 11.4Aeither synchronous or conventional switching PWM controllers. It has been optimize
fds8878.pdf
December 2008FDS8878N-Channel PowerTrench MOSFET 30V, 10.2A, 14mFeatures General Description rDS(on) = 14m, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 17m, VGS = 4.5V, ID = 9.3Aeither synchronous or conventional switching PWM controllers. It has been optimized for
fds8874.pdf
April 2007tmFDS8874N-Channel PowerTrench MOSFET 30V, 16A, 5.5mFeatures General Description rDS(on) = 5.5m, VGS = 10V, ID = 16A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.0m, VGS = 4.5V, ID = 15Aeither synchronous or conventional switching PWM controllers. It has been optimized for l
Datasheet: SP632S , FDS8817NZ , SP4412 , FDS8840NZ , FDS8842NZ , FDS8858CZ , SP4401 , SP3906 , 75N75 , SP3903 , FDS8876 , SP3902 , FDS8878 , SP3901 , FDS8880 , SP3900 , FDS8882 .
