FDS8870 Todos los transistores

 

FDS8870 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS8870
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 85 nC
   trⓘ - Tiempo de subida: 48 nS
   Cossⓘ - Capacitancia de salida: 900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: SO-8
 

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FDS8870 Datasheet (PDF)

 ..1. Size:684K  fairchild semi
 fds8870.pdf pdf_icon

FDS8870

April 2007tmFDS8870N-Channel PowerTrench MOSFET 30V, 18A, 4.2mFeatures General Description rDS(on) = 4.2m, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 4.9m, VGS = 4.5V, ID = 17Aeither synchronous or conventional switching PWM controllers. It has been optimized for l

 ..2. Size:477K  onsemi
 fds8870.pdf pdf_icon

FDS8870

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:622K  fairchild semi
 fds8876.pdf pdf_icon

FDS8870

April 2007tmFDS8876N-Channel PowerTrench MOSFET 30V, 12.5A, 8.2mFeatures General Description rDS(on) = 8.2m, VGS = 10V, ID = 12.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 10.2m, VGS = 4.5V, ID = 11.4Aeither synchronous or conventional switching PWM controllers. It has been optimize

 8.2. Size:652K  fairchild semi
 fds8878.pdf pdf_icon

FDS8870

December 2008FDS8878N-Channel PowerTrench MOSFET 30V, 10.2A, 14mFeatures General Description rDS(on) = 14m, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 17m, VGS = 4.5V, ID = 9.3Aeither synchronous or conventional switching PWM controllers. It has been optimized for

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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