FDS8870 Todos los transistores

 

FDS8870 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS8870

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 48 nS

Cossⓘ - Capacitancia de salida: 900 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm

Encapsulados: SO-8

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FDS8870 datasheet

 ..1. Size:684K  fairchild semi
fds8870.pdf pdf_icon

FDS8870

April 2007 tm FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2m Features General Description rDS(on) = 4.2m , VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 4.9m , VGS = 4.5V, ID = 17A either synchronous or conventional switching PWM controllers. It has been optimized for l

 ..2. Size:477K  onsemi
fds8870.pdf pdf_icon

FDS8870

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:622K  fairchild semi
fds8876.pdf pdf_icon

FDS8870

April 2007 tm FDS8876 N-Channel PowerTrench MOSFET 30V, 12.5A, 8.2m Features General Description rDS(on) = 8.2m , VGS = 10V, ID = 12.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 10.2m , VGS = 4.5V, ID = 11.4A either synchronous or conventional switching PWM controllers. It has been optimize

 8.2. Size:652K  fairchild semi
fds8878.pdf pdf_icon

FDS8870

December 2008 FDS8878 N-Channel PowerTrench MOSFET 30V, 10.2A, 14m Features General Description rDS(on) = 14m , VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 17m , VGS = 4.5V, ID = 9.3A either synchronous or conventional switching PWM controllers. It has been optimized for

Otros transistores... SP632S , FDS8817NZ , SP4412 , FDS8840NZ , FDS8842NZ , FDS8858CZ , SP4401 , SP3906 , IRFP450 , SP3903 , FDS8876 , SP3902 , FDS8878 , SP3901 , FDS8880 , SP3900 , FDS8882 .

 

 

 


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