FDS8870. Аналоги и основные параметры
Наименование производителя: FDS8870
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
|VGSth|ⓘ - Пороговое напряжение включения: 2.5 V
Qg ⓘ - Общий заряд затвора: 85 nC
tr ⓘ - Время нарастания: 48 ns
Cossⓘ - Выходная емкость: 900 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0042 Ohm
Тип корпуса: SO-8
Аналог (замена) для FDS8870
- подборⓘ MOSFET транзистора по параметрам
FDS8870 даташит
fds8870.pdf
April 2007 tm FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2m Features General Description rDS(on) = 4.2m , VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 4.9m , VGS = 4.5V, ID = 17A either synchronous or conventional switching PWM controllers. It has been optimized for l
fds8870.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds8876.pdf
April 2007 tm FDS8876 N-Channel PowerTrench MOSFET 30V, 12.5A, 8.2m Features General Description rDS(on) = 8.2m , VGS = 10V, ID = 12.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 10.2m , VGS = 4.5V, ID = 11.4A either synchronous or conventional switching PWM controllers. It has been optimize
fds8878.pdf
December 2008 FDS8878 N-Channel PowerTrench MOSFET 30V, 10.2A, 14m Features General Description rDS(on) = 14m , VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 17m , VGS = 4.5V, ID = 9.3A either synchronous or conventional switching PWM controllers. It has been optimized for
Другие MOSFET... SP632S , FDS8817NZ , SP4412 , FDS8840NZ , FDS8842NZ , FDS8858CZ , SP4401 , SP3906 , IRFP450 , SP3903 , FDS8876 , SP3902 , FDS8878 , SP3901 , FDS8880 , SP3900 , FDS8882 .
History: AP4439GM-HF
History: AP4439GM-HF
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