Справочник IGBT. IRGS14C40L

 

IRGS14C40L - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IRGS14C40L
   Тип транзистора: IGBT + Built-in Zener Diodes
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 125
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 400
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 20
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.2
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 2.2
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 2800
   Емкость коллектора типовая (Cc), pf: 100
   Общий заряд затвора (Qg), typ, nC: 27
   Тип корпуса: D2PAK

 Аналог (замена) для IRGS14C40L

 

 

IRGS14C40L Datasheet (PDF)

 ..1. Size:160K  international rectifier
 irgs14c40l.pdf

IRGS14C40L IRGS14C40L

IRGS14C40LIRGSL14C40LIgnition IGBTIRGB14C40LIGBT with on-chip Gate-Emitter and Gate-Collector clampsTERMINAL DIAGRAMCollector CES = C C CE(on) R1 GateR2 L(min)

 8.1. Size:50K  international rectifier
 irgs14b40l.pdf

IRGS14C40L IRGS14C40L

LIRGS14B40LINSULATED GATE BIPOLAR TRANSISTOR 14A, Voltage Clamped400V IGBTCo l l ect o rRgGat eRg e2Em it te rD PakMIN TYP MAX UNITS CONDITIONSVCL COLLECTOR - EMITTER CLAMPING VOLTAGE 370 400 430 V RG =1 kOhm , Ic =7AVECAV EMITTER - COLLECTOR AVALANCHE VOLTAGE 24 30 V Ic = -10mA, 25 CVGE(TH) GATE - EMITTER THRESHOLD VOLTAGE 0.75 1.8 2.2 V Ic = 1 mAIC25 CONTINUOU

 9.1. Size:111K  international rectifier
 irgs10b60kd.pdf

IRGS14C40L IRGS14C40L

PD - 94925IRGB10B60KDPbFIRGS10B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL10B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 12A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics.tsc > 10s, TJ=150C Positive V

 9.2. Size:259K  international rectifier
 irgs15b60k.pdf

IRGS14C40L IRGS14C40L

PD - 96358IRGS15B60KPbFINSULATED GATE BIPOLAR TRANSISTORFeatures CVCES = 600V Low VCE (on) Non Punch Through IGBT Technology.IC = 15A, TC=100C 10s Short Circuit Capability.G Square RBSOA. Positive VCE (on) Temperature Coefficient. tsc > 10s, TJ=150CE Lead-Freen-channelVCE(on) typ. = 1.8VBenefits Benchmark Efficiency for Motor Control.

 9.3. Size:332K  international rectifier
 irgs15b60kd.pdf

IRGS14C40L IRGS14C40L

PD - 95194IRGB15B60KDPbFIRGS15B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL15B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 15A, TC=100C 10s Short Circuit Capability. Square RBSOA.Gtsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive V

Другие IGBT... IRG4ZC71KD , IRG4ZH50KD , IRG4ZH70UD , IRG4ZH71KD , IRGBC20S , IRGBC30S , IRGBC40S , IRGS14B40L , IRGP4063 , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 .

 

 
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