IRGS14C40L - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGS14C40L
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 125 W
|Vce|ⓘ - Tensión máxima colector-emisor: 400 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 2800 nS
Coesⓘ - Capacitancia de salida, typ: 100 pF
Paquete / Cubierta: D2PAK
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IRGS14C40L Datasheet (PDF)
irgs14c40l.pdf
IRGS14C40LIRGSL14C40LIgnition IGBTIRGB14C40LIGBT with on-chip Gate-Emitter and Gate-Collector clampsTERMINAL DIAGRAMCollector CES = C C CE(on) R1 GateR2 L(min)
irgs14b40l.pdf
LIRGS14B40LINSULATED GATE BIPOLAR TRANSISTOR 14A, Voltage Clamped400V IGBTCo l l ect o rRgGat eRg e2Em it te rD PakMIN TYP MAX UNITS CONDITIONSVCL COLLECTOR - EMITTER CLAMPING VOLTAGE 370 400 430 V RG =1 kOhm , Ic =7AVECAV EMITTER - COLLECTOR AVALANCHE VOLTAGE 24 30 V Ic = -10mA, 25 CVGE(TH) GATE - EMITTER THRESHOLD VOLTAGE 0.75 1.8 2.2 V Ic = 1 mAIC25 CONTINUOU
irgs10b60kd.pdf
PD - 94925IRGB10B60KDPbFIRGS10B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL10B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 12A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics.tsc > 10s, TJ=150C Positive V
irgs15b60k.pdf
PD - 96358IRGS15B60KPbFINSULATED GATE BIPOLAR TRANSISTORFeatures CVCES = 600V Low VCE (on) Non Punch Through IGBT Technology.IC = 15A, TC=100C 10s Short Circuit Capability.G Square RBSOA. Positive VCE (on) Temperature Coefficient. tsc > 10s, TJ=150CE Lead-Freen-channelVCE(on) typ. = 1.8VBenefits Benchmark Efficiency for Motor Control.
irgs15b60kd.pdf
PD - 95194IRGB15B60KDPbFIRGS15B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL15B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 15A, TC=100C 10s Short Circuit Capability. Square RBSOA.Gtsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive V
Otros transistores... IRG4ZC71KD , IRG4ZH50KD , IRG4ZH70UD , IRG4ZH71KD , IRGBC20S , IRGBC30S , IRGBC40S , IRGS14B40L , SGP30N60 , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 .
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