All IGBT. IRGS14C40L Datasheet

 

IRGS14C40L IGBT. Datasheet pdf. Equivalent

Type Designator: IRGS14C40L

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 400

Collector-Emitter saturation Voltage |Vcesat|, V: 1.55

Maximum Collector Current |Ic|, A: 14

Maximum Junction Temperature (Tj), °C: 150

Package: D2PAK

IRGS14C40L Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGS14C40L Datasheet (PDF)

0.1. irgs14c40l.pdf Size:160K _international_rectifier

IRGS14C40L IRGS14C40L

 IRGS14C40L IRGSL14C40L Ignition IGBT IRGB14C40L IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector • CES = • • C C • • CE(on) R1 • Gate R2 • L(min) •

8.1. irgs14b40l.pdf Size:50K _international_rectifier

IRGS14C40L IRGS14C40L

 L IRGS14B40L INSULATED GATE BIPOLAR TRANSISTOR 14A, Voltage Clamped 400V IGBT Co l l ect o r Rg Gat e Rg e 2 Em it te r D Pak MIN TYP MAX UNITS CONDITIONS VCL COLLECTOR - EMITTER CLAMPING VOLTAGE 370 400 430 V RG =1 kOhm , Ic =7A VECAV EMITTER - COLLECTOR AVALANCHE VOLTAGE 24 30 V Ic = -10mA, 25 C VGE(TH) GATE - EMITTER THRESHOLD VOLTAGE 0.75 1.8 2.2 V Ic = 1 mA IC25 CONTINUOU

 9.1. irgs10b60kd.pdf Size:111K _international_rectifier

IRGS14C40L IRGS14C40L

PD - 94925 IRGB10B60KDPbF IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL10B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 12A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G • Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10µs, TJ=150°C • Positive V

9.2. irgs15b60kd.pdf Size:332K _international_rectifier

IRGS14C40L IRGS14C40L

PD - 95194 IRGB15B60KDPbF IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 15A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G tsc > 10µs, TJ=150°C • Ultrasoft Diode Reverse Recovery Characteristics. • Positive V

 9.3. irgs15b60k.pdf Size:259K _international_rectifier

IRGS14C40L IRGS14C40L

PD - 96358 IRGS15B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. IC = 15A, TC=100°C • 10µs Short Circuit Capability. G • Square RBSOA. • Positive VCE (on) Temperature Coefficient. tsc > 10µs, TJ=150°C E • Lead-Free n-channel VCE(on) typ. = 1.8V Benefits • Benchmark Efficiency for Motor Control.

Datasheet: IRG4ZC71KD , IRG4ZH50KD , IRG4ZH70UD , IRG4ZH71KD , IRGBC20S , IRGBC30S , IRGBC40S , IRGS14B40L , 10N40C1D , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 .

 

 
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