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IRF3205 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF3205

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 150

Предельно допустимое напряжение сток-исток (Uds): 55

Предельно допустимое напряжение затвор-исток (Ugs): 10

Максимально допустимый постоянный ток стока (Id): 98

Максимальная температура канала (Tj): 150

Время нарастания (tr):

Выходная емкость (Cd), pf:

Сопротивление сток-исток открытого транзистора (Rds), Ohm: 0.008

Тип корпуса: TO220AB

Аналог (замена) для IRF3205

IRF3205 PDF doc:

1.1. irf3205s.pdf Size:160K _international_rectifier

IRF3205
IRF3205

PD - 94149 IRF3205S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance

1.2. irf3205_.pdf Size:97K _international_rectifier

IRF3205
IRF3205

PD-91279E IRF3205 HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.3. irf3205.pdf Size:92K _international_rectifier

IRF3205
IRF3205

PD-91279E IRF3205 HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.4. irf3205z.pdf Size:181K _international_rectifier

IRF3205
IRF3205

PD - 94653 AUTOMOTIVE MOSFET IRF3205Z HEXFET Power MOSFET Features D ? Advanced Process Technology VDSS = 55V ? Ultra Low On-Resistance ? 175C Operating Temperature RDS(on) = 6.5m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techni

1.5. irf3205.pdf Size:450K _first_silicon

IRF3205
IRF3205

SEMICONDUCTOR IRF3205 TECHNICAL DATA N-Channel Power MOSFET (55V/120A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25℃) Parameter Symbol Rating Unit 1.Gate

Другие MOSFET... IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRFP250N , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 .

 


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Список транзисторов

Обновления

MOSFET: IXFH50N50P3 | IXFQ50N50P3 | IXFT50N50P3 | IPF06N03LA | IPS06N03LA | IPU06N03LA | IPD06N03LA | 2SK1202 | SIHFD123 | IRFD123 | IRF630MFP | SSM70T03J | SSM70T03H | AP9916J | AP9916H |
 

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