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IRF3205 Specs and Replacement

The IRF3205 is an N-channel MOSFET widely used in power electronics for switching. It features a low on-resistance of 8 mΩ and can handle continuous drain currents up to 110A, making it suitable for high-current applications. Its fast switching speed and robust thermal performance allow efficient operation in motor drivers, power supplies, and DC-DC converters. The TO-220 package ensures easy mounting and heat dissipation. Proper gate drive voltage is critical to fully turn on the MOSFET and minimize power loss.


   Type Designator: IRF3205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 101 nS
   Cossⓘ - Output Capacitance: 781 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220AB
 

 IRF3205 substitution

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IRF3205 Specs

 ..1. Size:92K  international rectifier
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IRF3205

PD-91279E IRF3205 HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 8.0m G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan... See More ⇒

 ..2. Size:215K  international rectifier
irf3205pbf.pdf pdf_icon

IRF3205

PD-94791B IRF3205PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching RDS(on) = 8.0m G l Fully Avalanche Rated l Lead-Free ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e... See More ⇒

 ..3. Size:450K  first silicon
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IRF3205

SEMICONDUCTOR IRF3205 TECHNICAL DATA N-Channel Power MOSFET (55V/120A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25 ) Parameter Symbol Rating Unit 1.Gate ... See More ⇒

 ..4. Size:663K  cn minos
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IRF3205

Silicon N-Channel Power MOSFET Description IRF3205, the silicon N-channel Enhanced MOSFETS, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for Synchronous Rectification, inverter systems ,high speed switching and general purpose applications. KEY CHARACTERISTICS... See More ⇒

Detailed specifications: IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , 10N65 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 .

Keywords - IRF3205 MOSFET specs

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