All MOSFET. IRF3205 Datasheet

 

IRF3205 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF3205

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 98 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO220AB

IRF3205 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF3205 Datasheet (PDF)

1.1. irf3205lpbf irf3205spbf.pdf Size:280K _upd

IRF3205
IRF3205

PD - 95106 IRF3205SPbF IRF3205LPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 8.0mΩ G l Fully Avalanche Rated l Lead-Free ID = 110A… S Descriptiסn Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques t

1.2. irf3205a irf3205h.pdf Size:596K _upd

IRF3205
IRF3205

RoHS IRF3205 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (110A, 55Volts) DESCRIPTION The Nell IRF3205 is a three-terminal silicon device with current conduction capability D D of 110A, fast switching speed, low on-state resistance, breakdown voltage rating of 55V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient

 1.3. irf3205pbf.pdf Size:215K _upd

IRF3205
IRF3205

PD-94791B IRF3205PbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 8.0mΩ G l Fully Avalanche Rated l Lead-Free ID = 110A… S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

1.4. irf3205zpbf irf3205zlpbf irf3205zspbf.pdf Size:379K _upd

IRF3205
IRF3205

PD - 95129A IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF Features l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l 175°C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 6.5mΩ l Lead-Free G Description ID = 75A S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve e

 1.5. irf3205s.pdf Size:160K _international_rectifier

IRF3205
IRF3205

PD - 94149 IRF3205S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance

1.6. irf3205 .pdf Size:97K _international_rectifier

IRF3205
IRF3205

PD-91279E IRF3205 HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.7. irf3205.pdf Size:92K _international_rectifier

IRF3205
IRF3205

PD-91279E IRF3205 HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.8. irf3205z.pdf Size:181K _international_rectifier

IRF3205
IRF3205

PD - 94653 AUTOMOTIVE MOSFET IRF3205Z HEXFET Power MOSFET Features D ? Advanced Process Technology VDSS = 55V ? Ultra Low On-Resistance ? 175C Operating Temperature RDS(on) = 6.5m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techni

1.9. irf3205.pdf Size:450K _first_silicon

IRF3205
IRF3205

SEMICONDUCTOR IRF3205 TECHNICAL DATA N-Channel Power MOSFET (55V/120A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25℃) Parameter Symbol Rating Unit 1.Gate

Datasheet: IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRFP250N , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 .

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