All MOSFET. IRF3205 Datasheet

 

IRF3205 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF3205

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 98 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 146 nC

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO220AB

IRF3205 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF3205 Datasheet (PDF)

1.1. irf3205zpbf irf3205zlpbf irf3205zspbf.pdf Size:379K _upd

IRF3205
IRF3205

PD - 95129A IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF Features l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l 175°C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 6.5mΩ l Lead-Free G Description ID = 75A S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve e

1.2. irf3205a irf3205h.pdf Size:596K _upd

IRF3205
IRF3205

RoHS IRF3205 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (110A, 55Volts) DESCRIPTION The Nell IRF3205 is a three-terminal silicon device with current conduction capability D D of 110A, fast switching speed, low on-state resistance, breakdown voltage rating of 55V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient

 1.3. irf3205lpbf irf3205spbf.pdf Size:280K _upd

IRF3205
IRF3205

PD - 95106 IRF3205SPbF IRF3205LPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 8.0mΩ G l Fully Avalanche Rated l Lead-Free ID = 110A… S Descriptiסn Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques t

1.4. irf3205pbf.pdf Size:215K _upd

IRF3205
IRF3205

PD-94791B IRF3205PbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 8.0mΩ G l Fully Avalanche Rated l Lead-Free ID = 110A… S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e

 1.5. auirf3205zstrl.pdf Size:330K _update-mosfet

IRF3205
IRF3205

PD - 97542 AUTOMOTIVE GRADE AUIRF3205Z AUIRF3205ZS Features ● Advanced Process Technology HEXFET® Power MOSFET ● Ultra Low On-Resistance ● 175°C Operating Temperature D V(BR)DSS 55V ● Fast Switching RDS(on) max. 6.5mΩ ● Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 110A ● Lead-Free, RoHS Compliant S ● Automotive Qualified * ID (Package Li

1.6. irf3205s.pdf Size:160K _international_rectifier

IRF3205
IRF3205

PD - 94149 IRF3205S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance

1.7. irf3205.pdf Size:92K _international_rectifier

IRF3205
IRF3205

PD-91279E IRF3205 HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.8. irf3205z.pdf Size:181K _international_rectifier

IRF3205
IRF3205

PD - 94653 AUTOMOTIVE MOSFET IRF3205Z HEXFET Power MOSFET Features D ? Advanced Process Technology VDSS = 55V ? Ultra Low On-Resistance ? 175C Operating Temperature RDS(on) = 6.5m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techni

1.9. irf3205 .pdf Size:97K _international_rectifier

IRF3205
IRF3205

PD-91279E IRF3205 HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.10. irf3205zs.pdf Size:258K _inchange_semiconductor

IRF3205
IRF3205

Isc N-Channel MOSFET Transistor IRF3205ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

1.11. irf3205strlpbf.pdf Size:206K _inchange_semiconductor

IRF3205
IRF3205

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205STRLPBF ·DESCRIPTION ·Drain Current I =110A@ T =25℃ D C ·Drain Source Voltage : V = 55V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMU

1.12. irf3205s.pdf Size:206K _inchange_semiconductor

IRF3205
IRF3205

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205S ·DESCRIPTION ·Drain Current I =110A@ T =25℃ D C ·Drain Source Voltage : V = 55V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATI

1.13. irf3205.pdf Size:246K _inchange_semiconductor

IRF3205
IRF3205

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205,IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM R

1.14. irf3205z.pdf Size:246K _inchange_semiconductor

IRF3205
IRF3205

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205Z,IIRF3205Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

1.15. irf3205.pdf Size:450K _first_silicon

IRF3205
IRF3205

SEMICONDUCTOR IRF3205 TECHNICAL DATA N-Channel Power MOSFET (55V/120A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25℃) Parameter Symbol Rating Unit 1.Gate

Datasheet: IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRFP250N , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 .

 

 
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