IRF3205 datasheet, аналоги, основные параметры
IRF3205 - это N-канальный МОП-транзистор, широко используемый в силовой электронике для коммутации. Он имеет низкое сопротивление при включении (8mOм) и может выдерживать непрерывные токи стока до 110А, что делает его пригодным для применения в системах с высоким током. Его высокая скорость переключения и высокие тепловые характеристики обеспечивают эффективную работу в приводах двигателей, источниках питания и DC-DC преобразователях. Корпус TO220 обеспечивает простоту монтажа и отвод тепла. Правильное напряжение на затворе имеет решающее значение для полного включения МОП-транзистора и минимизации потерь мощности.
Наименование производителя: IRF3205 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 101 ns
Cossⓘ - Выходная емкость: 781 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: TO220AB
📄📄 Копировать
Аналог (замена) для IRF3205
- подборⓘ MOSFET транзистора по параметрам
IRF3205 даташит
..1. Size:92K international rectifier
irf3205.pdf 
PD-91279E IRF3205 HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 8.0m G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan
..2. Size:215K international rectifier
irf3205pbf.pdf 
PD-94791B IRF3205PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching RDS(on) = 8.0m G l Fully Avalanche Rated l Lead-Free ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e
..3. Size:450K first silicon
irf3205.pdf 
SEMICONDUCTOR IRF3205 TECHNICAL DATA N-Channel Power MOSFET (55V/120A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25 ) Parameter Symbol Rating Unit 1.Gate
..4. Size:663K cn minos
irf3205.pdf 
Silicon N-Channel Power MOSFET Description IRF3205, the silicon N-channel Enhanced MOSFETS, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for Synchronous Rectification, inverter systems ,high speed switching and general purpose applications. KEY CHARACTERISTICS
..5. Size:246K inchange semiconductor
irf3205.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205 IIRF3205 FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R
0.1. Size:379K international rectifier
irf3205zpbf irf3205zlpbf irf3205zspbf.pdf 
PD - 95129A IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 6.5m l Lead-Free G Description ID = 75A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e
0.2. Size:330K international rectifier
auirf3205zstrl.pdf 
PD - 97542 AUTOMOTIVE GRADE AUIRF3205Z AUIRF3205ZS Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175 C Operating Temperature D V(BR)DSS 55V Fast Switching RDS(on) max. 6.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 110A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Li
0.3. Size:303K international rectifier
irf3205z irf3205zs irf3205zl.pdf 
PD - 94653B IRF3205Z AUTOMOTIVE MOSFET IRF3205ZS IRF3205ZL Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 6.5m G Description ID = 75A Specifically designed for Automotive applications, S this HEXFET Power MOS
0.4. Size:280K international rectifier
irf3205spbf irf3205lpbf.pdf 
PD - 95106 IRF3205SPbF IRF3205LPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching RDS(on) = 8.0m G l Fully Avalanche Rated l Lead-Free ID = 110A S Descripti n Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques t
0.5. Size:280K international rectifier
irf3205lpbf irf3205spbf.pdf 
PD - 95106 IRF3205SPbF IRF3205LPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching RDS(on) = 8.0m G l Fully Avalanche Rated l Lead-Free ID = 110A S Descripti n Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques t
0.6. Size:205K international rectifier
auirf3205.pdf 
PD - 97741 AUTOMOTIVE GRADE AUIRF3205 Features HEXFET Power MOSFET l Advanced Planar Technology D l Low On-Resistance V(BR)DSS 55V l Dynamic dV/dT Rating RDS(on) max. 8.0m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 110A l Fully Avalanche Rated S ID (Package Limited) 75A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Complian
0.7. Size:181K international rectifier
irf3205z.pdf 
PD - 94653 AUTOMOTIVE MOSFET IRF3205Z HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 6.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest
0.8. Size:160K international rectifier
irf3205s.pdf 
PD - 94149 IRF3205S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 8.0m G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- res
0.9. Size:379K international rectifier
irf3205zpbf irf3205zspbf irf3205zlpbf.pdf 
PD - 95129A IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 6.5m l Lead-Free G Description ID = 75A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e
0.10. Size:707K infineon
auirf3205z auirf3205zs.pdf 
AUIRF3205Z AUTOMOTIVE GRADE AUIRF3205ZS HEXFET Power MOSFET Features VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) max. 6.5m 175 C Operating Temperature ID (Silicon Limited) 110A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Qualified *
0.11. Size:596K nell
irf3205a irf3205h.pdf 
RoHS IRF3205 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (110A, 55Volts) DESCRIPTION The Nell IRF3205 is a three-terminal silicon device with current conduction capability D D of 110A, fast switching speed, low on-state resistance, breakdown voltage rating of 55V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient
0.12. Size:885K cn minos
irf3205s.pdf 
60V N-Channel Power MOSFET DESCRIPTION The IRF3205S uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply KEY CHARACTERISTICS V = 60V,I =120A DS D R
0.13. Size:206K inchange semiconductor
irf3205strlpbf.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205STRLPBF DESCRIPTION Drain Current I =110A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMU
0.14. Size:258K inchange semiconductor
irf3205zs.pdf 
Isc N-Channel MOSFET Transistor IRF3205ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
0.15. Size:246K inchange semiconductor
irf3205z.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205Z IIRF3205Z FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM
0.16. Size:206K inchange semiconductor
irf3205s.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3205S DESCRIPTION Drain Current I =110A@ T =25 D C Drain Source Voltage V = 55V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATI
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