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2N22 Transistor (IC) Datasheet. Cross Reference Search. 2N22 Equivalent

Type Designator: 2N22

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.12

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 20

Maximum collector current |Ic max|, A: 0.02

Maksimalna temperatura (Tj), °C: 100

Transition frequency (ft), MHz: 5

Collector capacitance (Cc), pF: 33

Forward current transfer ratio (hFE), min: 19

Noise Figure, dB: -

Package of 2N22 transistor: TO7

2N22 Transistor Equivalent Substitute - Cross-Reference Search

2N22 PDF:

1.1. 2n220.pdf Size:336K _rca

2N22
2N22

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1.2. 2n2206.pdf Size:292K _rca

2N22
2N22

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1.3. 2n2270.pdf Size:420K _rca

2N22
2N22

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1.4. 2n2205.pdf Size:160K _rca

2N22
2N22

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1.5. 2n2273.pdf Size:304K _rca

2N22
2N22

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1.6. mtp2n2222a.pdf Size:238K _motorola

2N22
2N22

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO 40 Vdc 3 Collector–Base Voltage VCBO 75 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO 6.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC 600 mAdc

1.7. p2n2222a.pdf Size:238K _motorola

2N22
2N22

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO 40 Vdc 3 Collector–Base Voltage VCBO 75 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO 6.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC 600 mAdc

1.8. 2n2219_2n2219a_3.pdf Size:55K _philips

2N22
2N22

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2219; 2N2219A NPN switching transistors 1997 Sep 03 Product specification Supersedes data of 1997 May 07 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2219; 2N2219A FEATURES PINNING • High current (max. 800 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1

1.9. 2n2222_2n2222a_cnv_2.pdf Size:53K _philips

2N22
2N22

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors 1997 May 29 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING • High current (max. 800 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 emitter 2 ba

1.10. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N22
2N22

2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are sili- con planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of col

1.11. 2n2219a_2n2222a.pdf Size:166K _st

2N22
2N22

2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage cur

1.12. 2n2222a_2n2219a.pdf Size:168K _st

2N22
2N22

2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage cur

1.13. 2n2218-a_2n2219-a.pdf Size:56K _central

2N22
2N22

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.14. 2n2221a_2n2222a.pdf Size:116K _central

2N22
2N22

DATA SHEET 2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO

1.15. 2n2222_2n2222a(to-18).pdf Size:232K _mcc

2N22
2N22

MCC 2N2222 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2N2222A Phone: (818) 701-4933 Fax: (818) 701-4939 Features • High current (max.800mA) • Low voltage (max.40V) NPN Switching • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol Ra

1.16. 2n2219a(to-39).pdf Size:327K _mcc

2N22
2N22

MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2N2219A CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 SWITCHING Features Features TRANSISTOR • Collector - Base Voltage 75 V • Collector - Current 800 mA • Medium Current, Bipolar Transistor SMALL SIGNAL • Marking: Type number BIPOLAR • Lead Free Finish/RoHS Compliant(Note 1) ("P

1.17. p2n2222a-d.pdf Size:164K _onsemi

2N22
2N22

P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25°C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc 3 Emitter--Base Voltage VEBO 6.0 Vdc EMITTER Collector Current -- Continuous IC 600 mAdc Total Device Dis

1.18. 2n2270.pdf Size:366K _no

2N22
2N22

1.19. 2n2222aub.pdf Size:250K _optek

2N22
2N22

Product Bulletin JANTX, JANTXV, 2N2222AUB September 1996 Surface Mount NPN General Purpose Transistor Type JANTX, JANTXV, 2N2222AUB Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V •Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . .

1.20. 2n2222aua.pdf Size:186K _optek

2N22
2N22

1.21. 2n2221.pdf Size:10K _semelab

2N22
2N22

2N2221 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.8A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV

1.22. 2n2243a.pdf Size:11K _semelab

2N22
2N22

2N2243A Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ca

1.23. 2n2223a.pdf Size:18K _semelab

2N22
2N22

2N2223A SEME LAB MECHANICAL DATA Dimensions in mm (inches) DUAL NPN TRANSISTOR 8.51 (0.335) 9.40 (0.370) IN TO77 HERMETIC PACKAGE 7.75 (0.305) 8.51 (0.335) FEATURES 1.02 • Silicon Planar Epitaxial NPN Transistor (0.040) Max. • High Rel and Screening Options Available. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 5 (0.100) 0.74 (0.029) 3 6 1.14 (0.045) 2

1.24. 2n2243.pdf Size:57K _advanced-semi

2N22
2N22

SILICON NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 39 The 2N2243 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS I 1.0 A (PEA ) V 80 V P 2.8 W @ T = 25 C T -65 C to +200 C 1 = E I ER 2 = BASE 3 = C LLEC R T -65 C to +200 C θ 62.5 C/W θ θ θ CHARACTERISTICS = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO I = 25

1.25. 2n2221_2.pdf Size:267K _cdil

2N22
2N22

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package Switching and Linear Application DC and VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N2221, 22 UNIT VCEO Collector Emitter Voltage 30 V VCBO Collector Bas

1.26. p2n2222_a.pdf Size:240K _cdil

2N22
2N22

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222 P2N2222A EBC TO-92 Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL 2222 2222A UNIT Collecto

1.27. 2n2270.pdf Size:224K _cdil

2N22
2N22

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2270 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 45 V Collector Emitter Voltage, RBE < 10 VCER 60 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 7.0 V IC Collec

1.28. 2n2218a_19a.pdf Size:208K _cdil

2N22
2N22

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2218A 2N2219A TO-39 Switching And Linear Application DC And VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2218A,19A UNIT Collector -Emitter Voltage VCEO 40 V Collector -Base Voltage VCBO 75 V Emitter -Base Voltage VEBO 6.0 V Col

1.29. 2n2221a_22a.pdf Size:222K _cdil

2N22
2N22

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221A 2N2222A TO-18 Switching And Linear Application DC And VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2221A,22A UNIT Collector -Emitter Voltage VCEO 40 V Collector -Base Voltage VCBO 75 V Emitter -Base Voltage VEBO 6.0 V Col

1.30. 2n2218_2n2219.pdf Size:58K _microsemi

2N22
2N22

TECHNICAL DATA NPN SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 Devices Qualified Level JAN 2N2218 2N2219 JANTX 2N2218A 2N2219A JANTXV 2N2218AL 2N2219AL JANS MAXIMUM RATINGS 2N2218 2N2218A; L Ratings Symbol Unit 2N2219 2N2219A; L Collector-Emitter Voltage 30 50 Vdc VCEO Collector-Base Voltage 60 75 Vdc VCBO TO- 39* (TO-205AD) Emitter-Base

1.31. 2n2222au.pdf Size:326K _first_silicon

2N22
2N22

SEMICONDUCTOR 2N2222AU TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-323/SC-70 package which 3 is designed for low power surface mount applications. Features 1 2 compliance with RoHS requirements. • We declare that the material of product SC-70 / SOT– 323 ORDERING INFO

1.32. 2n2222ae.pdf Size:462K _first_silicon

2N22
2N22

SEMICONDUCTOR 2N2222AE TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier 3 applications. They are housed in the SC-89 package which is designed for low power surface mount applications. 1 Features 2 compliance with RoHS requirements. • We declare that the material of product SC-89 ORDERING INFORMATION COLLECTOR

1.33. 2n2222as.pdf Size:446K _first_silicon

2N22
2N22

SEMICONDUCTOR 2N2222AS TECHNICAL DATA General Purpose Transistor NPN Silicon 3 compliance with RoHS requirements. • We declare that the material of product 2 1 ORDERING INFORMATION † SOT–23 Device Maring Shipping 2N2222AS 1P 3000 / Tape & Reel COLLECTOR 3 1 MAXIMUM RATINGS (TA = 25°C) BASE Rating Symbol Max Unit 2 Collector-Emitter Voltage VCEO 40 Vdc EMITTER Col

1.34. 2n2221a_2n2221al_2n2221aua_2n2221aub_2n2222a_2n2222al_2n2222aua_2n2222aub.pdf Size:377K _aeroflex

2N22
2N22

Radiation Hardened NPN Silicon Switching Transistors 2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB 2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUB Features • Qualified to MIL-PRF-19500/255 • Levels: Commerical JANS JANSM-3K Rads (Si) JANSD-l0K Rads (Si) JANSP-30K Rads (Si) JANSL-50K Rads (Si) JANSR-l00K Rads (Si) • TO-18 (TO-206AA), Surface mount UA & UB Packages Absolute Maximum Ra

See also transistors datasheet: 2N2195S , 2N2196 , 2N2196A , 2N2196B , 2N2197 , 2N2198 , 2N2199 , 2N21A , 2N2907 , 2N220 , 2N2200 , 2N2201 , 2N2202 , 2N2203 , 2N2204 , 2N2205 , 2N2206 .

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