All Transistors Datasheet



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2N22
  2N22
  2N22
 
2N22
  2N22
  2N22
 
2N22
  2N22
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2N22 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N22 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N22

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.12

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 20

Maximum collector current |Ic max|, A: 0.02

Maksimalna temperatura (Tj), °C: 100

Transition frequency (ft), MHz: 5

Collector capacitance (Cc), pF: 33

Forward current transfer ratio (hFE), min: 19

Noise Figure, dB: -

Package of 2N22 transistor: TO7

2N22 Equivalent Transistors - Cross-Reference Search

2N22 PDF doc:

1.1. 2n220.pdf Size:336K _rca

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1.2. 2n2205.pdf Size:160K _rca

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1.3. 2n2270.pdf Size:420K _rca

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1.4. 2n2206.pdf Size:292K _rca

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1.5. 2n2273.pdf Size:304K _rca

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1.6. mtp2n2222a.pdf Size:238K _motorola

2N22
2N22
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO 40 Vdc 3 Collector–Base Voltage VCBO 75 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO 6.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 40 — Vdc (IC = 10 mAdc, IB = 0) Col

1.7. p2n2222a.pdf Size:238K _motorola

2N22
2N22
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO 40 Vdc 3 Collector–Base Voltage VCBO 75 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO 6.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO 40 — Vdc (IC = 10 mAdc, IB = 0) Col

1.8. 2n2219_2n2219a_3.pdf Size:55K _philips

2N22
2N22
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2219; 2N2219A NPN switching transistors 1997 Sep 03 Product specification Supersedes data of 1997 May 07 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2219; 2N2219A FEATURES PINNING • High current (max. 800 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • High-speed switching • DC and VHF/UHF amplification, for 2N2219 only. 1 handbook, halfpage 3 2 DESCRIPTION 2 NPN switching transistor in a TO-39 metal package. PNP complement: 2N2905 and 2N2905A. 1 3 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N2219 - 60 V 2N2219A - 75 V VCEO collector-emitter voltage open base 2N2219 - 30 V 2N2219A - 40 V IC collector current (DC) - 800 mA Ptot total power diss

1.9. 2n2222_2n2222a_cnv_2.pdf Size:53K _philips

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2N22
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors 1997 May 29 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING • High current (max. 800 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • Linear amplification and switching. DESCRIPTION 3 handbook, halfpage 1 2 NPN switching transistor in a TO-18 metal package. 2 PNP complement: 2N2907A. 3 MAM264 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N2222 - 60 V 2N2222A - 75 V VCEO collector-emitter voltage open base 2N2222 - 30 V 2N2222A - 40 V IC collector current (DC) - 800 mA Ptot total power dissipation Tamb ? 25 °C - 500 mW hFE DC current gain IC = 10 m

1.10. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N22
2N22
2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are sili- con planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of collector cur- rent, low leakage currents and low saturation volt- ages. 2N2218/2N2219 approved to CECC 50002- TO-39 TO-18 100, 2N2221/2N2222 approved to CECC 50002-101 available on request. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-base Voltage (IE =0) 60 V VCEO Collector-emitter Voltage (IB = 0) 30 V VEBO Emitter-base Voltage (IC =0) 5 V IC Collector Current 0.8 A Pto t Total Power Dissipation at T ? 25 °C amb for 2N2218 and 2N2219 0.8 W for 2N2221 and 2N2222 0.5 W at Tcase ? 25 °C for 2N2218 and 2N2219 3 W for 2N2221 and

1.11. 2n2219a_2n2222a.pdf Size:166K _st

2N22
2N22
2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 75 V CBO E V Collector-Emitter Voltage (I = 0) 40 V CEO B VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 0.6 A ICM Collector Peak Current (tp < 5 ms) 0.8 A Ptot Total Dissipation at Tamb ? 25 oC 0.8 W for 2N2219A 0.5 W for 2N2222A at T ? 25 oC C 3 W for 2N2219A 1.8 W for 2N2222A o Tstg Storage Temperature -65 to 175 C o Tj Max. Operating Junction Temperature 175 C 1/7 February 2003 2N2219

1.12. 2n2222a_2n2219a.pdf Size:168K _st

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2N22
2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 75 V CBO E V Collector-Emitter Voltage (I = 0) 40 V CEO B VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 0.6 A ICM Collector Peak Current (tp < 5 ms) 0.8 A Ptot Total Dissipation at Tamb ? 25 oC 0.8 W for 2N2219A 0.5 W for 2N2222A at T ? 25 oC C 3 W for 2N2219A 1.8 W for 2N2222A o Tstg Storage Temperature -65 to 175 C o Tj Max. Operating Junction Temperature 175 C 1/7 February 2003 2N2219

1.13. 2n2221a_2n2222a.pdf Size:116K _central

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2N22
DATA SHEET 2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 800 mA Power Dissipation PD 400 mW Power Dissipation (TC=25°C) PD 1.2 W Operating and Storage Junction Temperature TJ,Tstg -65 to +200 °C Thermal Resistance ?JA 438 °C/W Thermal Resistance ?JC 146 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2221A 2N2222A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=60V 10 10 nA ICBO VCB=60V, TA=150°C 10 10 µA IEBO VEB=3.0V 10 10 nA ICEV VCE=60V, VEB=3.0V 10 10 nA BVCBO IC=10µA 75 75 V BVCEO IC=10mA 40 40 V BVEBO IE=10µA 6.0 6.0 V VCE(SAT) IC=150mA, IB=15mA 0.3 0.

1.14. 2n2218-a_2n2219-a.pdf Size:56K _central

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2N22
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.15. 2n2219a(to-39).pdf Size:327K _mcc

2N22
2N22
MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2N2219A CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 SWITCHING Features Features TRANSISTOR • Collector - Base Voltage 75 V • Collector - Current 800 mA • Medium Current, Bipolar Transistor SMALL SIGNAL • Marking: Type number BIPOLAR • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates NPN SILICON RoHS Compliant. See ordering information) TO-39 ABSOLUTE MAXIMUM RATINGS Collector - Emitter Voltage VCEO 50 Vdc Collector - Base Voltage VCBO 75 Vdc Emitter - Base Voltage VEBO 6 Vdc Collector Current - Continuous IC 800 mAdc Total Device Dissipation @ TA = 25 °C PD 0.8 WATTS ° Derate above 25 °C 4.6 mW/°C ° ° Total Device Dissipation @ TC = 25 °C PD 1.0 WATTS ° Derate above 25 °C 17.0 mW/°C ° ° Operating Junction&Storage Temperature Range TJ, Tstg - 55 to +200 °C ° Thermal Characteristics CHARACTERISTIC SYMBOL MAX UNIT Thermal Resistanc

1.16. 2n2222_2n2222a(to-18).pdf Size:232K _mcc

2N22
2N22
MCC 2N2222 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2N2222A Phone: (818) 701-4933 Fax: (818) 701-4939 Features • High current (max.800mA) • Low voltage (max.40V) NPN Switching • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage TO-18 2N2222 30 V 2N2222A 40 VCBO Collector-Base Voltage 2N2222 60 V 2N2222A 75 VEBO Emitter-Base Voltage 2N2222 5.0 V 2N2222A 6.0 IC Collector Current (DC) 800 mA ICM Peak Collector Current 800 mA IBM Peak Base Current 200 mA O TJ Operating Junction Temperature -55 to +150 C O TSTG Storage Temperature -55 to +150 C Thermal Characteristics Symbol Rating Max Unit Total power Dissipation Ptot TA 25 500 mW TC 25 1.2 W RJC Thermal Resistance, Junction to Case 146 K/W RJA Thermal Resistance, Junction to Ambient 350 K/W E

1.17. p2n2222a-d.pdf Size:164K _onsemi

2N22
2N22
P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25°C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc 3 Emitter--Base Voltage VEBO 6.0 Vdc EMITTER Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA =25°C PD 625 mW Derate above 25°C 5.0 mW/°C TO--92 Total Device Dissipation @ TC =25°C PD 1.5 W CASE 29 Derate above 25°C 12 mW/°C STYLE 17 Operating and Storage Junction TJ, Tstg --55 to °C Temperature Range +150 1 1 2 2 3 THERMAL CHARACTERISTICS 3 STRAIGHT LEAD BENT LEAD Characteristic Symbol Max Unit BULK PACK TAPE & REEL AMMO PACK Thermal Resistance, Junction to Ambient R?JA 200 °C/W Thermal Resistance, Junction to Case R?JC 83.3 °C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Funct

1.18. 2n2270.pdf Size:366K _no

2N22
2N22

1.19. 2n2222aua.pdf Size:186K _optek

2N22
2N22

1.20. 2n2222aub.pdf Size:250K _optek

2N22
2N22
Product Bulletin JANTX, JANTXV, 2N2222AUB September 1996 Surface Mount NPN General Purpose Transistor Type JANTX, JANTXV, 2N2222AUB Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V •Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V •Miniature package to minimize circuit Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0 board area Collector Current-Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA •Hermetically sealed Operating Junction Temperature (T ). . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C J •Qualification per MIL-S-19500/255 Storage Junction Temperature (T ) . . . . . . . . . . . . . . . . . . . . .

1.21. 2n2243a.pdf Size:11K _semelab

2N22
2N22
2N2243A Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can be processed in accordance with the 0.74 (0.029) requirements of BS, CECC and JAN, 1.14 (0.045) 0.71 (0.028) JANTX, JANTXV and JANS specifications 0.86 (0.034) 45° TO39 (TO205AD) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 80 V IC(CONT) 1 A hFE @ 10/0.15 (VCE / IC) 40 120 - ft 50M Hz PD 0.8 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice

1.22. 2n2221.pdf Size:10K _semelab

2N22
2N22
2N2221 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.8A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 1 2 TO18 (TO206AA) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 30 V IC(CONT) 0.8 A hFE @ 10/0.15 (VCE / IC) 40 120 - ft 250M Hz PD 0.5 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no

1.23. 2n2223a.pdf Size:18K _semelab

2N22
2N22
2N2223A SEME LAB MECHANICAL DATA Dimensions in mm (inches) DUAL NPN TRANSISTOR 8.51 (0.335) 9.40 (0.370) IN TO77 HERMETIC PACKAGE 7.75 (0.305) 8.51 (0.335) FEATURES 1.02 • Silicon Planar Epitaxial NPN Transistor (0.040) Max. • High Rel and Screening Options Available. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 5 (0.100) 0.74 (0.029) 3 6 1.14 (0.045) 2 1 45? 0.71 (0.028) 0.86 (0.034) TO77 METAL PACKAGE PIN 1 – Collector PIN 4 – Emitter PIN 2 – Base PIN 5 – Base PIN 3 – Emitter PIN 6 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO Collector – Emitter Voltage 60V VCER Collector – Emitter Voltage 80V VCBO Collector – Base Voltage 100V VEBO Emitter – Base Voltage 7V IC Collector Current 500mA TJ , Tstg Operating and Storage Junction Temperature Range –65 to +200°C Per Side Total Device PD Total Device Dissipation @ TA = 25°C 0.5W 0.6W Derate above 25°C 2.86mW/°C 3.43mW/°C PD Total Device Dissip

1.24. 2n2218a_19a.pdf Size:208K _cdil

2N22
2N22
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2218A 2N2219A TO-39 Switching And Linear Application DC And VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2218A,19A UNIT Collector -Emitter Voltage VCEO 40 V Collector -Base Voltage VCBO 75 V Emitter -Base Voltage VEBO 6.0 V Collector Current Continuous IC 800 mA Power Dissipation @Ta=25 degC PD 800 mW Derate Above 25deg C 4.57 mW/deg C @ Tc=25 degC PD 3.0 W Derate Above 25deg C 17.1 mW/deg C Operating And Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VALUE MIN MAX UNIT Collector -Emitter Voltage VCEO IC=10mA,IB=0 40 - V Collector -Base Voltage VCBO IC=10uA.IE=0 75 - V Emitter-Base Voltage VEBO IE=10uA, IC=0 6.0 - V Collector-Cut off Current ICBO VCB=60V, IE=0 - 10 nA Ta=150 deg C VCB=6

1.25. 2n2221_2.pdf Size:267K _cdil

2N22
2N22
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package Switching and Linear Application DC and VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N2221, 22 UNIT VCEO Collector Emitter Voltage 30 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5V IC Collector Current Continuous 800 mA PD Power Dissipation @Ta=25?C 500 mW Derate Above 25?C 2.28 mW/?C PD Power Dissipation @ Tc=25?C 1.2 W Derate Above 25?C 6.85 mW/?C Tj, Tstg -65 to +200 Operating and Storage Junction ?C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION VALUE MIN MAX UNIT BVCEO IC=10mA,IB=0 Collector Emitter Breakdown Voltage 30 V BVCBO Collector Base Breakdown Voltage IC=10µA.IE=0 60 V BVEBOf Emitter Base Breakdown Voltage IE=10µA, IC=0 5

1.26. 2n2221a_22a.pdf Size:222K _cdil

2N22
2N22
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221A 2N2222A TO-18 Switching And Linear Application DC And VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2221A,22A UNIT Collector -Emitter Voltage VCEO 40 V Collector -Base Voltage VCBO 75 V Emitter -Base Voltage VEBO 6.0 V Collector Current Continuous IC 800 mA Power Dissipation @Ta=25 degC PD 500 mW Derate Above 25deg C 2.28 mW/deg C @ Tc=25 degC PD 1.2 W Derate Above 25deg C 6.85 mW/deg C Operating And Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VALUE MIN MAX UNIT Collector -Emitter Voltage VCEO IC=10mA,IB=0 40 - V Collector -Base Voltage VCBO IC=10uA.IE=0 75 - V Emitter-Base Voltage VEBO IE=10uA, IC=0 6.0 - V Collector-Cut off Current ICBO VCB=60V, IE=0 - 10 nA Ta=150 deg C VCB=6

1.27. 2n2270.pdf Size:224K _cdil

2N22
2N22
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2270 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 45 V Collector Emitter Voltage, RBE < 10 VCER 60 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 7.0 V IC Collector Current Continuous 1.0 A Power Dissipation @ Ta=25?C PD 1.0 W Derate Above 25?C 5.71 mW/ ?C Power Dissipation @ Tc=25?C PD 5.0 W Derate Above 25?C 28.6 mW/ ?C Operating and Storage Junction Tj, Tstg - 65 to +200 ?C Temperature Range THERMAL RESISTANCE Rth (j-a) Junction to Ambient in free air 175 ?C/W Junction to Case Rth (j-c) 35 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT VCEO IC=1mA, IB=0 Collector Emitter Voltage 45 V VCER Collector Emitter Voltage IC=1mA, RBE=10? 60 V Collector Base Voltag

1.28. p2n2222_a.pdf Size:240K _cdil

2N22
2N22
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222 P2N2222A EBC TO-92 Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL 2222 2222A UNIT Collector -Emitter Voltage VCEO 30 40 V Collector -Base Voltage VCBO 60 75 V Emitter -Base Voltage VEBO 5.0 6.0 V Collector Current Continuous IC 600 mA Power Dissipation @Ta=25 degC PD 625 mW 5 Derate Above 25deg C mW/deg C @ Tc=25 degC PD 1.5 W 12 Derate Above 25deg C mW/deg C Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 83.3 deg C/W Junction to Ambient Rth(j-a) 200 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2222 2222A UNIT Collector -Emitter

1.29. 2n2218_2n2219.pdf Size:58K _microsemi

2N22
2N22
TECHNICAL DATA NPN SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 Devices Qualified Level JAN 2N2218 2N2219 JANTX 2N2218A 2N2219A JANTXV 2N2218AL 2N2219AL JANS MAXIMUM RATINGS 2N2218 2N2218A; L Ratings Symbol Unit 2N2219 2N2219A; L Collector-Emitter Voltage 30 50 Vdc VCEO Collector-Base Voltage 60 75 Vdc VCBO TO- 39* (TO-205AD) Emitter-Base Voltage 5.0 6.0 Vdc VEBO 2N2218, 2N2218A Collector Current 800 mAdc IC 2N2219, 2N2219A Total Power Dissipation @ T = +250C(1) 0.8 W A PT @ T = +250C(2) 3.0 W C 0 Operating & Storage Junction Temp. Range -55 to +200 C Top, Tstg THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 0 Thermal Resistance, Junction-to-Case 59 C/W R?JC TO-5* 1) Derate linearly 4.6 mW/0C above T > +250C A 2N2218AL, 2) Derate linearly 17.0 mW/0C above T > +250C C 2N2219AL *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise

See also transistors datasheet: 2N2195S , 2N2196 , 2N2196A , 2N2196B , 2N2197 , 2N2198 , 2N2199 , 2N21A , 2N2907 , 2N220 , 2N2200 , 2N2201 , 2N2202 , 2N2203 , 2N2204 , 2N2205 , 2N2206 .

Keywords

 2N22 Datasheet  2N22 Datenblatt  2N22 RoHS  2N22 Distributor
 2N22 Application Notes  2N22 Component  2N22 Circuit  2N22 Schematic
 2N22 Equivalent  2N22 Cross Reference  2N22 Data Sheet  2N22 Fiche Technique

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