All Transistors. 2N22 Datasheet

 

2N22 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N22

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.12 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 100 °C

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 33 pF

Forward Current Transfer Ratio (hFE), MIN: 19

Noise Figure, dB: -

Package: TO7

2N22 Transistor Equivalent Substitute - Cross-Reference Search

 

 

2N22 Datasheet (PDF)

1.1. 2n220.pdf Size:336K _rca

2N22

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1.2. 2n2206.pdf Size:292K _rca

2N22

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 1.3. 2n2270.pdf Size:420K _rca

2N22

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1.4. 2n2205.pdf Size:160K _rca

2N22

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 1.5. 2n2273.pdf Size:304K _rca

2N22

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1.6. 2n2222ac1b.pdf Size:563K _upd

2N22
2N22

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 • High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VE

1.7. 2n2222ahr.pdf Size:1138K _upd

2N22
2N22

2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS 1 2 BVCEO min 40 V 50 V 3 IC (max) 0.8 A TO-18 3 3 hFE at 10 V - 150 mA 100 4 1 1 2 2 • Hermetic packages LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid. • Up to 100 krad(Si) low dose ratee Description Figure 1. Internal schematic

1.8. 2n2222ac1a.pdf Size:563K _upd

2N22
2N22

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 • High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VE

1.9. p2n2222ag.pdf Size:165K _upd

2N22
2N22

P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25°C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc 3 Emitter--Base Voltage VEBO 6.0 Vdc EMITTER Collector Current -- Continuous IC 600 mAdc Total Devi

1.10. 2n2222ac3b.pdf Size:86K _upd

2N22
2N22

SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C • High Speed Saturated Switching • Hermetic LCC3 Ceramic package. • Variant B to MIL-PRF-19500/255 outline • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Bas

1.11. 2n2218al.pdf Size:161K _upd

2N22
2N22

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN-SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2219 JAN 2N2218A 2N2219A JANTX 2N2218AL 2N2219AL

1.12. 2n2221aubc.pdf Size:137K _upd

2N22
2N22

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2222A JAN 2N2221AL 2N2222AL JANTX 2N2221AUA 2N2222AUA JANTXV 2N2221AUB 2N2222AUB JANS 2N2221AUBC * 2N2222AUBC * * Available to JANS quality le

1.13. 2n2218x.pdf Size:10K _upd

2N22

2N2218X Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 30V dia. IC = 0.8A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

1.14. 2n2222ac3a.pdf Size:86K _upd

2N22
2N22

SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C • High Speed Saturated Switching • Hermetic LCC3 Ceramic package. • Variant B to MIL-PRF-19500/255 outline • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Bas

1.15. 2n2222aubc.pdf Size:138K _upd

2N22
2N22

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM – 3K Rads (Si) 2N2221A 2N2222A JANSD – 10K Rads (Si) 2N2221AL 2N2222AL JANSP – 30K Rads (Si) 2N2221AUA 2N2222AUA

1.16. 2n2221ax.pdf Size:19K _upd

2N22
2N22

2N2221AX MECHANICAL DATA HIGH SPEED SWITCHING BIPOLAR NPN Dimensions in mm (inches) TRANSISTOR IN A HERMETICALLY 5.84 (0.230) 5.31 (0.209) SEALED TO-18 PACKAGE 4.95 (0.195) 4.52 (0.178) FEATURES • SILICON NPN TRANSISTOR • METAL CASE (JEDEC TO-18) • HIGH SPEED SWITCHING 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. APPLICATIONS: SUITABLE FOR HIGH SPEED SWITC

1.17. 2n2218ax.pdf Size:11K _upd

2N22

2N2218AX Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 40V dia. IC = 0.8A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100)

1.18. 2n2270al.pdf Size:10K _upd

2N22

2N2270AL Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a 7.75 (0.305) 8.51 (0.335) Hermetically sealed TO5 Metal Package. 6.10 (0.240) 6.60 (0.260) 0.89 (0.035)max. 38.00 Bipolar NPN Device. (1.5) 0.41 (0.016) min. 0.53 (0.021) dia. VCEO = 45V 5.08 (0.200) IC = 1.0A typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ca

1.19. 2n2222ac3c.pdf Size:86K _upd

2N22
2N22

SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C • High Speed Saturated Switching • Hermetic LCC3 Ceramic package. • Variant B to MIL-PRF-19500/255 outline • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Bas

1.20. 2n2221al.pdf Size:138K _upd

2N22
2N22

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM – 3K Rads (Si) 2N2221A 2N2222A JANSD – 10K Rads (Si) 2N2221AL 2N2222AL JANSP – 30K Rads (Si) 2N2221AUA 2N2222AUA

1.21. mtp2n2222a.pdf Size:238K _motorola

2N22
2N22

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO 40 Vdc 3 Collector–Base Voltage VCBO 75 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO 6.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC 600 mAdc

1.22. p2n2222a.pdf Size:238K _motorola

2N22
2N22

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO 40 Vdc 3 Collector–Base Voltage VCBO 75 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO 6.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC 600 mAdc

1.23. 2n2219 2n2219a 3.pdf Size:55K _philips

2N22
2N22

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2219; 2N2219A NPN switching transistors 1997 Sep 03 Product specification Supersedes data of 1997 May 07 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2219; 2N2219A FEATURES PINNING • High current (max. 800 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1

1.24. 2n2222 2n2222a cnv 2.pdf Size:53K _philips

2N22
2N22

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors 1997 May 29 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING • High current (max. 800 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 emitter 2 ba

1.25. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N22
2N22

2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are sili- con planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of col

1.26. 2n2219a 2n2222a.pdf Size:166K _st

2N22
2N22

2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage cur

1.27. 2n2222a 2n2219a.pdf Size:168K _st

2N22
2N22

2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage cur

1.28. 2n2218-a 2n2219-a.pdf Size:56K _central

2N22

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.29. 2n2221a 2n2222a.pdf Size:116K _central

2N22
2N22

DATA SHEET 2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO

1.30. 2n2222 2n2222a(to-18).pdf Size:232K _mcc

2N22
2N22

MCC 2N2222 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2N2222A Phone: (818) 701-4933 Fax: (818) 701-4939 Features • High current (max.800mA) • Low voltage (max.40V) NPN Switching • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol Ra

1.31. 2n2219a(to-39).pdf Size:327K _mcc

2N22
2N22

MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2N2219A CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 SWITCHING Features Features TRANSISTOR • Collector - Base Voltage 75 V • Collector - Current 800 mA • Medium Current, Bipolar Transistor SMALL SIGNAL • Marking: Type number BIPOLAR • Lead Free Finish/RoHS Compliant(Note 1) ("P

1.32. p2n2222a-d.pdf Size:164K _onsemi

2N22
2N22

P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25°C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc 3 Emitter--Base Voltage VEBO 6.0 Vdc EMITTER Collector Current -- Continuous IC 600 mAdc Total Device Dis

1.33. 2n2270.pdf Size:366K _no

2N22
2N22

1.34. 2n2222aub.pdf Size:250K _optek

2N22
2N22

Product Bulletin JANTX, JANTXV, 2N2222AUB September 1996 Surface Mount NPN General Purpose Transistor Type JANTX, JANTXV, 2N2222AUB Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V •Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . .

1.35. 2n2222aua.pdf Size:186K _optek

2N22
2N22

1.36. 2n2221.pdf Size:10K _semelab

2N22

2N2221 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.8A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV

1.37. 2n2243a.pdf Size:11K _semelab

2N22

2N2243A Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ca

1.38. 2n2223a.pdf Size:18K _semelab

2N22
2N22

2N2223A SEME LAB MECHANICAL DATA Dimensions in mm (inches) DUAL NPN TRANSISTOR 8.51 (0.335) 9.40 (0.370) IN TO77 HERMETIC PACKAGE 7.75 (0.305) 8.51 (0.335) FEATURES 1.02 • Silicon Planar Epitaxial NPN Transistor (0.040) Max. • High Rel and Screening Options Available. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 5 (0.100) 0.74 (0.029) 3 6 1.14 (0.045) 2

1.39. rt2n22m.pdf Size:164K _isahaya

2N22
2N22

 RT2N22M Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit:mm DESCRIPTION 2.1 RT2N22M is composite transistor with built-in 1.25 bias resistor. ① ⑤ FEATURE ② Built-in bias resistor (R1=22kΩ) Mini package for easy mounting ③ ④ APPLICATION Inverted circuit, Switching circuit, Interface circui

1.40. 2n2243.pdf Size:57K _advanced-semi

2N22

SILICON NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 39 The 2N2243 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS I 1.0 A (PEA ) V 80 V P 2.8 W @ T = 25 C T -65 C to +200 C 1 = E I ER 2 = BASE 3 = C LLEC R T -65 C to +200 C θ 62.5 C/W θ θ θ CHARACTERISTICS = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO I = 25

1.41. 2n2221 2.pdf Size:267K _cdil

2N22
2N22

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package Switching and Linear Application DC and VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N2221, 22 UNIT VCEO Collector Emitter Voltage 30 V VCBO Collector Bas

1.42. p2n2222 a.pdf Size:240K _cdil

2N22
2N22

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222 P2N2222A EBC TO-92 Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL 2222 2222A UNIT Collecto

1.43. 2n2270.pdf Size:224K _cdil

2N22
2N22

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2270 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 45 V Collector Emitter Voltage, RBE < 10 VCER 60 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 7.0 V IC Collec

1.44. 2n2218a 19a.pdf Size:208K _cdil

2N22
2N22

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2218A 2N2219A TO-39 Switching And Linear Application DC And VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2218A,19A UNIT Collector -Emitter Voltage VCEO 40 V Collector -Base Voltage VCBO 75 V Emitter -Base Voltage VEBO 6.0 V Col

1.45. 2n2221a 22a.pdf Size:222K _cdil

2N22
2N22

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221A 2N2222A TO-18 Switching And Linear Application DC And VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2221A,22A UNIT Collector -Emitter Voltage VCEO 40 V Collector -Base Voltage VCBO 75 V Emitter -Base Voltage VEBO 6.0 V Col

1.46. 2n2218 2n2219.pdf Size:58K _microsemi

2N22
2N22

TECHNICAL DATA NPN SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 Devices Qualified Level JAN 2N2218 2N2219 JANTX 2N2218A 2N2219A JANTXV 2N2218AL 2N2219AL JANS MAXIMUM RATINGS 2N2218 2N2218A; L Ratings Symbol Unit 2N2219 2N2219A; L Collector-Emitter Voltage 30 50 Vdc VCEO Collector-Base Voltage 60 75 Vdc VCBO TO- 39* (TO-205AD) Emitter-Base

1.47. 2n2222au.pdf Size:326K _first_silicon

2N22
2N22

SEMICONDUCTOR 2N2222AU TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-323/SC-70 package which 3 is designed for low power surface mount applications. Features 1 2 compliance with RoHS requirements. • We declare that the material of product SC-70 / SOT– 323 ORDERING INFO

1.48. 2n2222ae.pdf Size:462K _first_silicon

2N22
2N22

SEMICONDUCTOR 2N2222AE TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier 3 applications. They are housed in the SC-89 package which is designed for low power surface mount applications. 1 Features 2 compliance with RoHS requirements. • We declare that the material of product SC-89 ORDERING INFORMATION COLLECTOR

1.49. 2n2222as.pdf Size:446K _first_silicon

2N22
2N22

SEMICONDUCTOR 2N2222AS TECHNICAL DATA General Purpose Transistor NPN Silicon 3 compliance with RoHS requirements. • We declare that the material of product 2 1 ORDERING INFORMATION † SOT–23 Device Maring Shipping 2N2222AS 1P 3000 / Tape & Reel COLLECTOR 3 1 MAXIMUM RATINGS (TA = 25°C) BASE Rating Symbol Max Unit 2 Collector-Emitter Voltage VCEO 40 Vdc EMITTER Col

1.50. 2n2221a 2n2221al 2n2221aua 2n2221aub 2n2222a 2n2222al 2n2222aua 2n2222aub.pdf Size:377K _aeroflex

2N22
2N22

Radiation Hardened NPN Silicon Switching Transistors 2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB 2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUB Features • Qualified to MIL-PRF-19500/255 • Levels: Commerical JANS JANSM-3K Rads (Si) JANSD-l0K Rads (Si) JANSP-30K Rads (Si) JANSL-50K Rads (Si) JANSR-l00K Rads (Si) • TO-18 (TO-206AA), Surface mount UA & UB Packages Absolute Maximum Ra

Datasheet: 2N2195S , 2N2196 , 2N2196A , 2N2196B , 2N2197 , 2N2198 , 2N2199 , 2N21A , 2N2907 , 2N220 , 2N2200 , 2N2201 , 2N2202 , 2N2203 , 2N2204 , 2N2205 , 2N2206 .

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