MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2222A/DAmplifier TransistorsNPN SiliconP2N2222ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO 40 Vdc 3CollectorBase Voltage VCBO 75 VdcCASE 2904, STYLE 17EmitterBase Voltage VEBO 6.0 VdcTO92 (TO226AA)Collector Current Conti

DISCRETE SEMICONDUCTORSDATA SHEETM3D1252N2222; 2N2222ANPN switching transistors1997 May 29Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors 2N2222; 2N2222AFEATURES PINNING High current (max. 800 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitte

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N2219; 2N2219ANPN switching transistors1997 Sep 03Product specificationSupersedes data of 1997 May 07File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors 2N2219; 2N2219AFEATURES PINNING High current (max. 800 mA)PIN DESCRIPTION Low voltage (max. 40

2N2222AHRHi-Rel 40 V, 0.8 A NPN transistorDatasheet - production dataFeaturesParameter ESCC JANS12 BVCEO min 40 V 50 V3IC (max) 0.8 A TO-1833hFE at 10 V - 150 mA 10041122 Hermetic packagesLCC-3UB ESCC and JANS qualifiedPin 4 in UB is connected to the metallic lid. Up to 100 krad(Si) low dose rateeDescriptionFigure 1. Internal schematic

2N2219A2N2222AHIGH SPEED SWITCHESPRELIMINARY DATADESCRIPTION The 2N2219A and 2N2222A are silicon PlanarEpitaxial NPN transistors in Jedec TO-39 (for2N2219A) and in Jedec TO-18 (for 2N2222A)metal case. They are designed for high speedswitching application at collector current up to500mA, and feature useful current gain over awide range of collector current, low leakage

2N2219A2N2222AHIGH SPEED SWITCHESPRELIMINARY DATADESCRIPTION The 2N2219A and 2N2222A are silicon PlanarEpitaxial NPN transistors in Jedec TO-39 (for2N2219A) and in Jedec TO-18 (for 2N2222A)metal case. They are designed for high speedswitching application at collector current up to500mA, and feature useful current gain over awide range of collector current, low leakage

2N2218-2N22192N2221-2N2222HIGH-SPEED SWITCHESDESCRIPTIONThe 2N2218, 2N2219, 2N2221 and 2N2222 are sili-con planar epitaxial NPN transistors in JedecTO-39 (for 2N2218 and 2N2219) and in JedecTO-18 (for 2N2221 and 2N2222) metal cases. Theyare designed for high-speed switching applicationsat collector currents up to 500 mA, and feature use-ful current gain over a wide range of

DATA SHEET2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25C) SYMBOL UNITS Collector-Base Voltage VCBO 75 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage

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MCC2N2222Micro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112N2222APhone: (818) 701-4933Fax: (818) 701-4939Features High current (max.800mA) Low voltage (max.40V) NPN Switching Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates TransistorsRoHS Compliant. See ordering information) Maximum Ratings

MCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth 2N2219ACA 91311Phone: (818) 701-4933Fax: (818) 701-4939SWITCHINGFeaturesFeaturesTRANSISTOR Collector - Base Voltage 75 V Collector - Current 800 mA Medium Current, Bipolar TransistorSMALL SIGNAL Marking: Type number BIPOLAR Lead Free Finish/RoHS Complian

P2N2222AAmplifier TransistorsNPN SiliconFeatures These are Pb--Free Devices*http://onsemi.comCOLLECTOR1MAXIMUM RATINGS (TA =25C unless otherwise noted)Characteristic Symbol Value Unit2BASECollector--Emitter Voltage VCEO 40 VdcCollector--Base Voltage VCBO 75 Vdc3Emitter--Base Voltage VEBO 6.0 VdcEMITTERCollector Current -- Continuous IC 600 mAdcTotal Devi

P2N2222AAmplifier TransistorsNPN SiliconFeatures These are Pb--Free Devices*http://onsemi.comCOLLECTOR1MAXIMUM RATINGS (TA =25C unless otherwise noted)Characteristic Symbol Value Unit2BASECollector--Emitter Voltage VCEO 40 VdcCollector--Base Voltage VCBO 75 Vdc3Emitter--Base Voltage VEBO 6.0 VdcEMITTERCollector Current -- Continuous IC 600 mAdcTotal Devi

Product Bulletin JANTX, JANTXV, 2N2222AUBSeptember 1996Surface Mount NPN General Purpose TransistorType JANTX, JANTXV, 2N2222AUBFeature Absolute Maximum Ratings (TA = 25o C unless otherwise noted)Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 VCeramic surface mount packageCollector-Emitter Voltage. . . . . . .

2N2223ASEMELABMECHANICAL DATADimensions in mm (inches)DUAL NPN TRANSISTOR 8.51 (0.335)9.40 (0.370)IN TO77 HERMETIC PACKAGE7.75 (0.305)8.51 (0.335)FEATURES1.02 Silicon Planar Epitaxial NPN Transistor(0.040)Max. High Rel and Screening Options Available.0.41 (0.016)0.53 (0.021)5.08(0.200)2.54(0.100)42.545(0.100)0.74 (0.029)3 61.14 (0.

2N2243ADimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VE

2N2218XDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 0.8A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

2N2218AXDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 40V dia.IC = 0.8A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100)

2N2221AXMECHANICAL DATA HIGH SPEED SWITCHING BIPOLAR NPN Dimensions in mm (inches) TRANSISTOR IN A HERMETICALLY 5.84 (0.230)5.31 (0.209)SEALED TO-18 PACKAGE 4.95 (0.195)4.52 (0.178)FEATURES SILICON NPN TRANSISTOR METAL CASE (JEDEC TO-18) HIGH SPEED SWITCHING 0.48 (0.019)0.41 (0.016)dia.2.54 (0.100)Nom.APPLICATIONS: SUITABLE FOR HIGH SPEED SWITC

SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C High Speed Saturated Switching Hermetic LCC3 Ceramic package. Variant B to MIL-PRF-19500/255 outline Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VEBO Emitter Bas

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 High Speed Saturated Switching Hermetic Surface Mounted Package. Ideally suited for High Speed Switching and General Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 75V VCEO Collector Emitter Voltage 50V VE

2N2270ALDimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar NPN Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar NPN Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 45V 5.08 (0.200)IC = 1.0A typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 ca

2N2221Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPN Device. VCEO = 30V 0.48 (0.019)0.41 (0.016)dia.IC = 0.8A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JAN

RT2N22M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N22M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circui

SILICON NPN TRANSISTORDESCRIPTION:PACKAGE STYLE TO- 39The 2N2243 is Designed for GeneralPurpose Amplifier and SwitchingApplications.MAXIMUM RATINGSI 1.0 A (PEA )V 80 VP 2.8 W @ T = 25 C T -65 C to +200 C1 = E I ER 2 = BASE3 = C LLEC R T -65 C to +200 C 62.5 C/WCHARACTERISTICS = 25 CSYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITSBVCEO I = 25

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222P2N2222AEBCTO-92Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL 2222 2222A UNITColle

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR SWITCHING TRANSISTORS 2N22212N2222TO-18Metal Can PackageSwitching and Linear Application DC and VHF Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N2221, 22 UNITVCEOCollector Emitter Voltage 30 VVCBOCollector

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR SWITCHING TRANSISTORS 2N2218A2N2219ATO-39Switching And Linear Application DC And VHF Amplifier ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N2218A,19A UNITCollector -Emitter Voltage VCEO 40 VCollector -Base Voltage VCBO 75 VEmitter -Base Voltage VEBO 6.0 V

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221A2N2222ATO-18Switching And Linear Application DC And VHF Amplifier ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N2221A,22A UNITCollector -Emitter Voltage VCEO 40 VCollector -Base Voltage VCBO 75 VEmitter -Base Voltage VEBO 6.0 V

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N2270TO-39Metal Can PackageAmplifier TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 45 VCollector Emitter Voltage, RBE

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM 3K Rads (Si) 2N2221A 2N2222A JANSD 10K Rads (Si) 2N2221AL 2N2222AL JANSP 30K Rads (Si) 2N2221AUA 2N2222AUA

TECHNICAL DATA NPN SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 Devices Qualified Level JAN 2N2218 2N2219 JANTX 2N2218A 2N2219A JANTXV 2N2218AL 2N2219AL JANS MAXIMUM RATINGS 2N2218 2N2218A; L Ratings Symbol Unit 2N2219 2N2219A; L Collector-Emitter Voltage 30 50 Vdc VCEO Collector-Base Voltage 60 75 Vdc VCBO TO- 39* (TO-205AD) Emitter-B

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN-SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2219 JAN2N2218A 2N2219A JANTX2N2218AL 2N2219AL

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN-SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2219 JAN2N2218A 2N2219A JANTX2N2218AL 2N2219AL

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM 3K Rads (Si) 2N2221A 2N2222A JANSD 10K Rads (Si) 2N2221AL 2N2222AL JANSP 30K Rads (Si) 2N2221AUA 2N2222AUA

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2222A JAN2N2221AL 2N2222AL JANTX2N2221AUA 2N2222AUA JANTXV2N2221AUB 2N2222AUB JANS 2N2221AUBC * 2N2222AUBC * * Available to JANS quality le

2N2222A Rev.G .Aug.-2018 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features I , V CBO CE(sat)Low Leakage current, Low collector saturation voltage enabling low voltage operation. / Applications General purpose amplifier.

2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Sy

SEMICONDUCTOR2N2222AETECHNICAL DATAGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifier3applications. They are housed in the SC-89 package whichis designed for low power surface mount applications.1Features 2compliance with RoHS requirements. We declare that the material of product SC-89ORDERING INFORMATIONCOLLECTOR

SEMICONDUCTOR2N2222ASTECHNICAL DATAGeneral Purpose TransistorNPN Silicon3compliance with RoHS requirements. We declare that the material of product 21ORDERING INFORMATION SOT23Device Maring Shipping 2N2222AS 1P 3000 / Tape & ReelCOLLECTOR31MAXIMUM RATINGS (TA = 25C)BASERating Symbol Max Unit2Collector-Emitter Voltage VCEO 40 VdcEMITTERCol

SEMICONDUCTOR2N2222AUTECHNICAL DATAGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-323/SC-70 package which 3is designed for low power surface mount applications.Features 12compliance with RoHS requirements. We declare that the material of product SC-70 / SOT 323 ORDERING INFO

Radiation Hardened NPN Silicon Switching Transistors2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUBFeatures Qualified to MIL-PRF-19500/255 Levels: CommericalJANSJANSM-3K Rads (Si) JANSD-l0K Rads (Si) JANSP-30K Rads (Si) JANSL-50K Rads (Si) JANSR-l00K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB PackagesAbsolute Maximum Ra

2N2222ANPN / DescriptionsTO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features / Applications ICBO, VCE(sat)Low Leakage current, Low collector saturation voltage enabling low voltage operation.General purpose amplifier. / Equivalent Circuit