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8050
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100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC536SP
2SC537 .. 2SC5819
2SC582 .. 2SC690M
2SC691 .. 2SC90
2SC900 .. 2SD1065S
2SD1066 .. 2SD1257A
2SD1258 .. 2SD1446
2SD1447 .. 2SD1667
2SD1667Q .. 2SD1854
2SD1855 .. 2SD21
2SD2100 .. 2SD2449
2SD2453 .. 2SD365A
2SD366 .. 2SD594
2SD596 .. 2SD794-O
2SD794-R .. 2STF1550
2STF2220 .. 40261
40262 .. 40837
40850 .. A747A
A747B .. ACY23
ACY23V .. AF170
AF171 .. ASY85
ASY86 .. BC158C
BC158V .. BC250
BC250A .. BC340-6
BC341 .. BC487
BC487-18 .. BC817-16
BC817-16L .. BC860
BC860A .. BCW14
BCW14K .. BCW98B
BCW98C .. BCY72QF
BCY76 .. BD233
BD233-10 .. BD371D-6
BD372 .. BD618
BD619 .. BD952F
BD953 .. BDW24
BDW24A .. BDY12-10
BDY12-16 .. BF241C
BF241D .. BF432
BF432L .. BF870EA
BF870S .. BFQ38S
BFQ39 .. BFS505
BFS51 .. BFV97N
BFV98 .. BFY86A
BFY86B .. BLY17
BLY17A .. BSS82BL
BSS82C .. BSX61
BSX62 .. BTB9435L3
BTC1510E3 .. BU209A
BU210 .. BUF405AFI
BUF405AFP .. BUS21C
BUS21D .. BUW74
BUW75 .. BUY78
BUY79 .. CD9012GHI
CD9012J .. CIL148B
CIL148C .. CL155B
CL155C .. CPS1545B
CPS1550B .. CSA952M
CSA952M9AW .. CSC2611
CSC2655 .. CTP1033
CTP1034 .. D29J10
D29J2 .. D42CU11
D42CU12 .. D64TS5
D64VE3 .. DT34-300
DT34-400 .. DTC014EUB
DTC014YEB .. DTL3425
DTL3426 .. ECG2327
ECG2328 .. ED1601D
ED1601E .. ET1550
ET1551 .. FE4016
FE4017 .. FMC4A
FMC5A .. FPC1317
FPC1318 .. FXT551
FXT551SM .. GE10022
GE10023 .. GET2484
GET2904 .. GSDR10025I
GSDR15020 .. GT405B
GT405G .. HEPS3021
HEPS3024 .. HSE125
HSE127 .. IMT1A
IMT2A .. K2105
K2105A .. KRA122S
KRA152F .. KRC114
KRC114M .. KRC864F
KRC864U .. KSB744A-O
KSB744A-R .. KSC3953
KSC3953C .. KSD986
KSD986-O .. KT209L
KT209M .. KT343B
KT343V .. KT640B-2
KT640V-2 .. KT817A9
KT817B .. KT9144A9
KT9145A9 .. KTC2983D
KTC2983L .. KTX215U
KTX216U .. MD1128
MD1129 .. MJ13332
MJ13333 .. MJE13003-P
MJE13003B .. MJF16206
MJF16210 .. MMBR941BLT3
MMBR941LT1 .. MMBTA43LT1
MMBTA44 .. MP1547
MP1547A .. MP601
MP601A .. MPS3710
MPS3711 .. MPSW3725
MPSW42 .. MT0492
MT0493 .. NA21YX
NA21YY .. NB021FJ
NB021FK .. NB213XY
NB213Y .. NKT224
NKT225 .. NR421FE
NR421FF .. NTE2426
NTE2427 .. P213A
P213B .. PDTA113ZE
PDTA113ZM .. PMD13K40
PMD13K60 .. PT902
PT902-1 .. RCA6341
RCA8203 .. RN1905
RN1905AFS .. RN2911
RN2911AFS .. S2818
S2818A .. SE6023
SE6062 .. SM2176
SM2177 .. SRC1205E
SRC1205EF .. STD1802
STD1802T4-A .. T1250
T1251 .. TBC557
TBC558 .. TIP31C
TIP31CE3 .. TIX3034
TIX3035 .. TN5129
TN5130 .. TR01042
TR01062-1 .. UN1216S
UN1217Q .. UP1753
UP1851 .. ZTX1053A
ZTX1055A .. ZTX531
ZTX531K .. ZXTPS720MC
 
8050 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

8050 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 8050

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 9

Forward current transfer ratio (hFE), min: 85

Noise Figure, dB: -

Package of 8050 transistor: TO92

8050 Equivalent Transistors - Cross-Reference Search

8050 PDF doc:

1.1. tpc8050-h_en_datasheet_090630.pdf Size:207K _toshiba2

8050
8050
TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.3 m? (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V Gate-source voltage VGSS 20 V JEDEC ? DC (Note 1) ID 11 Drain current A JEITA ? Pulsed (Note 1) IDP 44 Drain power dissipation (t = 10 s) TOSHIBA 2-6J1B PD 1.9 W (Note 2a) Weight: 0.085g (typ.) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Single-pulse avalan

1.2. tpca8050-h.pdf Size:185K _toshiba2

8050
8050
TPCA8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPCA8050-H Switching Regulator Applications Unit: mm Motor Drive Applications 1.27 0.4 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595 Small gate charge: QSW = 10 nC (typ.) 1 A Low drain-source ON-resistance: RDS (ON) = 9.0 m? (typ.) High forward transfer admittance: |Yfs| = 70 S (typ.) 5.0 0.2 Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 4.25 0.2 Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V 8 5 Gate-source voltage VGSS 20 V DC (Note 1) ID 24 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) IDP 72 JEDEC ? Drain power dissipation (Tc = 25?

1.3. fdms8050.pdf Size:331K _fairchild_semi

8050
8050
August 2014 FDMS8050 N-Channel PowerTrench® MOSFET 30 V, 200 A, 0.65 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A improve the overall efficiency and to minimize switch node Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low rDS(on) conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on). and high efficiency MSL1 robust package design Applications 100% UIL tested OringFET RoHS Compliant Synchronous Rectifier Bottom Top Pin 1 S S D S Pin 1 S G D S D S D D D D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous TC = 25 °C 200 ID -Conti

1.4. ss8050.pdf Size:157K _fairchild_semi

8050
8050
SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100A, IE=0 40 V BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 V BVEBO Emitter-Base Breakdown Voltage IE=100A, IC=0 6 V ICBO Collector Cut-off Current VCB=35V, IE=0 100 nA IEBO Emitter Cut-off Current VEB=6V, IC=0 100 nA hFE1 DC Curren

1.5. ss8050.pdf Size:62K _samsung

8050
8050
SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. Complimentary to SS8550 Collector Current IC=1.5A Collector Dissipation:PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1.5 A Collector Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0 25 V Emitter-Base Breakdown Voltage BVEBO IE=100 , IC=0 V 6 Collector Cut-off Current ICBO VCB=35V, IE=0 100 nA Emitter Cut-off Current IEBO VEB=6V, IC=0 100 nA DC Current Gain hFE1 VCE=1V, IC=5mA 45 135 hFE2 VCE=1V, IC=100mA 85 1

1.6. he8050.pdf Size:216K _utc

8050
8050
UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR ? DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. ? FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25V *Complimentary to UTC HE8550 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 HE8050L-x-AB3-R HE8050G-x-AB3-R SOT-89 B C E Tape Reel HE8050L-x-AE3-R HE8050G-x-AE3-R SOT-23 E B C Tape Reel HE8050L-x-T92-B HE8050G-x-T92-B TO-92 E C B Tape Box HE8050L-x-T92-K HE8050G-x-T92-K TO-92 E C B Bulk HE8050L-x-T9N-B HE8050G-x-T9N-B TO-92NL E C B Tape Box HE8050L-x-T9N-K HE8050G-x-T9N-K TO-92NL E C B Bulk Note: Pin Assignment: B: Base C: Collector E: Emitter www.unisonic.com.tw 1 of 5 QW-R211-018. F Copyright © 2014 Unisonic Te

1.7. 8050s.pdf Size:207K _utc

8050
8050
UNISONIC TECHNOLOGIES CO., LTD 8050S NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR ? DESCRIPTION The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. ? FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20V *Complementary to UTC 8550S ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 8050SL-x-AE3-R 8050SG-x-AE3-R SOT-23 E B C Tape Reel 8050SL-x-T92-B 8050SG-x-T92-B TO-92 E C B Tape Box 8050SL-x-T92-K 8050SG-x-T92-K TO-92 E C B Bulk ? MARKING INFORMATION PACKAGE MARKING SOT-23 TO-92 www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R206-001.H 8050S NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collecto

1.8. s8050.pdf Size:173K _utc

8050
8050
UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR ? DESCRIPTION The UTC S8050 is a low voltage high current small signal 1 NPN transistor, designed for Class B push-pull audio amplifier TO-92 and general purpose applications. ? FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to S8550 ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 S8050L-x-T92-B S8050G-x-T92-B TO-92 E B C Tape Box S8050L-x-T92-K S8050G-x-T92-K TO-92 E B C Bulk Note: Pin Assignment: E: Emitter B: Base C: Collector ? MARKING INFORMATION PACKAGE MARKING TO-92 www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R201-013.D S8050 NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Co

1.9. he8050l.pdf Size:19K _utc

8050
8050
UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to UTC HE8550 TO-92L 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Dissipation(Ta=25C) Pc 1 W Collector Current Ic 1.5 A Junction Temperature Tj 150 C Storage Temperature TSTG -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=100A,IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO I

1.10. utc8050s.pdf Size:23K _utc

8050
8050
UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V TO-92 *Complementary to UTC 8550S 1:EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Dissipation(Ta=25 ) Pc 1 W Collector Current Ic 800 mA Junction Temperature Tj 150 C Storage Temperature TSTG -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=100A,IE=0 30 V Collector-Emitter Breakdown Voltage BVCEO Ic=1mA,IB=0 20 V Emitter-Ba

1.11. sps8050.pdf Size:199K _auk

8050
8050
SPS8050 Semiconductor Semiconductor NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6?(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code SPS8050 SPS8050 TO-92 Outline Dimensions unit : mm 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9104-002 1 SPS8050 Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 12 V Emitter-base voltage VEBO 6.5 V Collector current IC 1.5 A Collector dissipation PC 625 mW Junction temperature TJ 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO IC=50µA, IE=0 15 - - V Collecto

1.12. sts8050.pdf Size:237K _auk

8050
8050
STS8050 NPN Silicon Transistor Descriptions PIN Connection • High current application C • Radio in class B push-pull operation B Feature E • Complementary pair with STS8550 TO-92 Ordering Information Type NO. Marking Package Code STS8050 STS8050 TO-92 Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 6 V Collector current IC 800 mA Emitter current IE -800 mA Collector power dissipation PC 625 mW Junction temperature TJ 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO IC=500?A, IE=0 30 - - V Collector-emitter breakdown voltage BVCEO IC=1mA, IB=0 25 - - V Collector cut-off current ICBO VCB=15V, IE=0 - - 50 nA DC current gain hFE* VCE=1V, IC=50mA 85 - 300 - Collector-emitter saturation

1.13. s8050.pdf Size:192K _secos

8050
8050
S8050 NPN Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8550 B 1.200 1.400 1 Base C 0.890 1.110 2 Collector Current: IC=0.5A Emitter D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.600 S Top View B 12 L 0.890 1.020 S 2.100 2.500 MARKING: J3Y V G V 0.450 0.600 All Dimension in mm C H J D K O MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown volt

1.14. ss8050t.pdf Size:105K _secos

8050
8050
SS8050T NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM : 1 W Collector Current ICM : 1.5 A 1 Collector-base voltage 2 3 V(BR)CBO : 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg : - 55 C ~ + 150 C 1. EMITTER 2 2. BASS 3 . COLLECTOR 3 O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 25 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100?A, I =0 E C Collector cut-off current I V =40 V , I =0 0.1 CBO CB E ?A Collector cut-off current I V =20V , I =0 0.1 CEO CE B ?A Emitter cut-off current I V =5V, I =0 0.1 EBO EB C ?A H V =1V, I = 100mA 85 400 FE(1) CE C DC current gain H V =1V, I = 800mA 40 FE(2) CE

1.15. m8050.pdf Size:365K _secos

8050
8050
M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A ? Power dissipation L 3 3 Top View C B MARKING 1 1 2 Product Marking Code 2 K E M8050 Y11 D H J F G PACKAGE INFORMATION Millimeter Millimeter Package MPQ Leader Size REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18 SOT-23 3K 7 inch B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 CLASSIFICATION OF hFE(2) Collector Product-Rank M8050-L ?? Range 80-300 ?? Base ?? Emitter MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 6 V Collector Current - Continuous IC 0.8 A Collector Power Dissipation PC 0.2 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELE

1.16. s8050t.pdf Size:386K _secos

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8050
S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current: IC = 0.5 A 1 2 3 2.54 0.1 1: Emitter 2: Base 3: Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 5 V mA Collector Currrent IC 500 Total Power Dissipation PD 625 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base Breakdown Voltage V(BR)CBO 40 - - V IC = 100 ?A, IE = 0 Collector-emitter Breakdown Voltage V(BR)CEO 25 - - V IC = 0.1 mA, IB = 0 Emitter-base Breakdown Voltage V(BR)EBO 5 - - V IE = 100 ?A

1.17. ss8050.pdf Size:310K _secos

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SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L ? Complimentary to SS8550 3 3 Top View ? Power Dissipation C B 1 1 2 PCM : 0.3W 2 K E ? Collector Current ICM : 1.5A D Collector H J ? Collector - Base Voltage F G ?? V(BR)CBO : 40V ? Operating & Storage junction temperature Millimeter Millimeter REF. REF. Min. Max. Min. Max. TJ, TSTG : -55? ~ +150? ?? A 2.70 3.04 G - 0.18 Base B 2.10 2.80 H 0.40 0.60 MARKING : Y1 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 ?? Emitter MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 1.5 A Collector Power Dissapation PC 0.3 W Junction, Storage Temperature TJ, TSTG 15

1.18. 8050sst.pdf Size:331K _secos

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8050
8050SST 1.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? General Purpose Switching and Amplification. G H ?Emitter ?Collector ?Base J CLASSIFICATION OF hFE (1) A D Millimeter Product-Rank 8050SST-B 8050SST-C 8050SST-D REF. B Min. Max. A 4.40 4.70 Range 85~160 120~200 160~300 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ?? ?? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 1.5 A Collector Power Dissipation PC 1 W Thermal Resistance From Junction to Ambient R?JA 125 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECT

1.19. ss8050w.pdf Size:258K _secos

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SS8050W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM : 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM : 1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO : 40 V S Top View B K 0.350 0.500 Operating & storage junction temperature 1 2 L 0.590 0.720 O O Tj, Tstg : - 55 C ~ + 150 C S 2.000 2.400 V G V 0.280 0.420 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 25 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100?A, I =0 E C Collector cut-off current I V =40 V , I =0 0.1 CBO CB E ?A Collector cut-off cu

1.20. cn8050_cn8550_c_d.pdf Size:227K _cdil

8050
8050
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS CN8050 NPN CN8550 PNP TO-92 Plastic Package C B E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 6.0 V IC Collector Current 800 mA ICM Peak Collector Current 1.0 A IB Base Current 100 mA Power Dissipation@ Ta=25?C *Ptot 625 mW Tj Junction Temperature 150 ?C Tstg Storage Temperature Range - 55 to +150 ?C THERMAL RESISTANCE *Rth (j-a) Junction to Ambient in free air 200 K/W * Valid provided that leads are kept at ambient temperature at a distance of 2mm from case. ELECTRICAL CHARACTERISTICS (Ta=25?C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS VCEO IC=2mA, IB=0 Collector Emitter Voltage 25 V VCBO Collector Base Voltage IC=10µA, IE=0 40 V VEBO Emitter Base Voltage IE=100µA, IC=0 6 V hF

1.21. cmbt8050.pdf Size:132K _cdil

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8050
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION (NPN) 1 = BASE SOT-23 2 = EMITTER 3 = COLLECTOR 3 Formed SMD Package 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 25 V Emitter Base Voltage VEBO 6 V Collector Current Continuous IC 800 mA Collector Dissipation @ Ta=25?C PC 250 mW Operating And Storage Junction Tj, Tstg - 55 to +125 ?C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Base Voltage VCBO IC=100µA, IE=0 30 V Collector Emitter Voltage VCEO IC=10mA, IB=0 25 V VEBO Emitter Base Voltage IE=10µA, IC=0 6 V Collector Cut Off Current ICBO VCB=15V, IE=0 50 nA Emitter Cut Off Current IEBO VEB=4V, IC=0 500 nA DC Current Gain hFE *IC=50mA, VCE=1V 100 400 IC=350mA, VCE=1V

1.22. ktc8050.pdf Size:38K _kec

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SEMICONDUCTOR KTC8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage 5 V L 2.30 M 0.45 MAX IC Collector Current 800 mA N 1.00 1 2 3 IE Emitter Current -800 mA 1. EMITTER 2. BASE PC Collector Power Dissipation 625 mW 3. COLLECTOR Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=15V, IE=0 Collector Cut-off Current - - 50 nA V(BR)CBO IC=0.5mA, IE=0 Collector-Base Breakdown Voltage 35 - - V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 30 - - V hFE(1) (Note)

1.23. mps8050s.pdf Size:391K _kec

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SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 ~ 0.10 L 0.55 VCBO Collector-Base Voltage 40 V P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO Collector-Emitter Voltage 25 V P 7 VEBO Emitter-Base Voltage 6 V M IC Collector Current 1.5 A 1. EMITTER PC * Collector Power Dissipation 350 mW 2. BASE Tj Junction Temperature 150 3. COLLECTOR Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) SOT-23 Marking hFE Rank Lot No. Type Name BH ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 100 nA IEBO VEB=6V, IC=0 Emitter Cut-off Curren

1.24. ktc8050s.pdf Size:393K _kec

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SEMICONDUCTOR KTC8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 ~ 0.10 VCBO Collector-Base Voltage 35 V L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO Collector-Emitter Voltage 30 V P 7 VEBO Emitter-Base Voltage 5 V M IC Collector Current 800 mA 1. EMITTER IE Emitter Current -800 mA 2. BASE PC * Collector Power Dissipation 350 mW 3. COLLECTOR Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range SOT-23 * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BK ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=15V, IE=0 Collector Cut-off Current - - 50 nA V(BR)CBO IC

1.25. ktc8050a.pdf Size:48K _kec

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SEMICONDUCTOR KTC8050A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to KTC8550A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25?) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage 5 V L 2.30 M 0.45 MAX IC Collector Current 800 mA N 1.00 1 2 3 IE Emitter Current -800 mA 1. EMITTER 2. BASE PC Collector Power Dissipation 400 mW 3. COLLECTOR Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=15V, IE=0 Collector Cut-off Current - - 50 nA V(BR)CBO IC=0.5mA, IE=0 Collector-Base Breakdown Voltage 35 - - V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 30 - - V h

1.26. mps8050.pdf Size:45K _kec

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SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to MPS8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25?) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 40 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 25 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage 6 V L 2.30 M 0.45 MAX IC Collector Current 1.5 A N 1.00 1 2 3 625 1. EMITTER PC* Collector Power Dissipation mW 2. BASE 400 3. COLLECTOR Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range TO-92 *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 100 nA IEBO VEB=6V, IC=0 Emitter Cut-off Current - - 100 nA V(BR)CBO A, IE=0 Collector-Base Breakdown Voltage IC=100? 40 - -

1.27. pxt8050.pdf Size:471K _htsemi

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PXT8 050 TRANSISTOR(NPN) SOT-89 FEATURES Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Emitter cut-off current ICEO VCE=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC=100mA 85 400 DC current gain hFE(2) VCE=1V, IC=800mA 40 Col

1.28. s8050.pdf Size:526K _htsemi

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S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40 V , IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V , IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 ?A HFE(1) VCE=1V, IC= 50mA 120 350 DC cu

1.29. m8050.pdf Size:479K _htsemi

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M8050 TRANSISTOR(NPN) SOT-23 FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20V, IB=0 0.1 ?A VCE=1V, IC=5mA 45 h FE(1) DC current gain VCE=1V, IC=100mA 80 300 h FE(2) h VCE=1V, IC=800mA 40 ( ) FE 3 Collec

1.30. ss8050.pdf Size:888K _htsemi

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SS8 050 SOT-23 TRANSISTOR(NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) ? Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC= 100mA 120 400 DC current gain hFE(2) VCE=1V, I

1.31. s8050.pdf Size:292K _gsme

8050
8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.32. m8050.pdf Size:292K _gsme

8050
8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.33. ss8050.pdf Size:292K _gsme

8050
8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.34. mmt8050.pdf Size:292K _gsme

8050
8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.35. s8050a.pdf Size:292K _gsme

8050
8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.36. pxt8050.pdf Size:218K _lge

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PXT8050 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 3. EMITTER SOT-89 4.6 B 4.4 1.6 1.8 Features 1.4 1.4 Compliment to PXT8550 2.6 4.25 2.4 3.75 0.8 MARKING: Y1 MIN 0.53 0.40 0.48 0.44 2x) 0.13 B MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.35 0.37 1.5 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Emitter cut-

1.37. s8050_sot-23.pdf Size:208K _lge

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S8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=40 V , IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V , IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V , IC=0 0.1

1.38. ss8050_sot-23.pdf Size:323K _lge

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SS8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC= 100mA 1

1.39. 8050s_to-92.pdf Size:181K _lge

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8050S(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.32 2.92 5.33 MIN Features Complimentary to 8550S 3.43 Collector current: IC=0.5A MIN 2.41 2.67 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter 3.18 Value Units 2.03 4.19 2.67 VCBO Collector-Base Voltage 40 V 1.14 1.40 VCEO Collector-Emitter Voltage 25 V 2.03 2.67 VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE

1.40. m8050_sot-23.pdf Size:234K _lge

8050
8050
M8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y11 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20V, IB=0 0.1 ?A VCE=1V, IC=5mA 45 h FE(1) DC current gain VCE=1V, IC=100mA 80 300 h F

1.41. ss8050_to-92.pdf Size:168K _lge

8050
8050
SS8050(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM : 1 W (TA=25?) : 2 W (TC=25?) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Emitter cut-off current ICEO VCE=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC=100mA 85 400 DC cur

1.42. m8050_to-92.pdf Size:200K _lge

8050
8050
M8050(NPN) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 625 mW Dimensions in inches and (millimeters) TJ Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC= 1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20V, IB=0 0.1 ?A hFE(1) VCE=1V, IC=5mA 45 DC current gain hFE(2) VCE=1V, IC=100mA 80 400 hFE(3) VCE=1V, I

1.43. s8050_to-92.pdf Size:566K _lge

8050
8050
S8050(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complimentary to S8550 Collector current: IC=0.5A MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V,

1.44. ss8050lt1.pdf Size:165K _wietron

8050
8050
SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 1500 300 2.4 417 0.1 25 40 100 5.0 100 u 0.15 35 0.15 u 4.0 WEITRON 27-Jul-2012 1/2 http://www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - (IC=100 mAdc, VCE=1.0 Vdc) hFE 600 100 Collector-Emitter Saturation Voltage VCE(sat) - Vdc 0.5 (IC=800 mAdc, IB=80mAdc) CLASSIFICATION OF h FE P Rank Q R S Range 100-200 150-300 200-400 300-600 Marking 1HA 1HC 1HE 1HG SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 D G G 1.70 2.10 E H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L 0.30 0.61 L M J M 0.076 0.25 WEITRON 27-Jul-2012 2/2 http://www.weitron.com.tw

1.45. s8050.pdf Size:2028K _wietron

8050
8050
S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temperature Tstg C -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) V(BR)CEO 25 Vdc Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) V(BR)CBO 40 - Vdc - Vdc V(BR)EBO 5.0 Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0) uAdc ICE0 Collector Cutoff Current (V = 20 Vdc, I =0) - 0.1 CE B ICBO - 0.1 uAdc Collector Cutoff Current (V = 40 Vdc, IE=0) CB - IEBO d Emitter Cutoff Current (VEB= 3.0V c, I =0) 0.1 uAdc C WEITRON http://www.weitron.com.tw S8050 ELECTRICAL CHARACTERISTICS (TA=2

1.46. ss8050.pdf Size:223K _wietron

8050
8050
SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25?C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation TA=25°C PD W 1.0 TJ,Tstg Junction and Storage, Temperature -55 to +150 °C ELECTRICAL CHARACTERISTICS (TA=25?C unless otherwise noted) Characteristics Symbol Max Unit Min Typ Collector-Base Breakdown Voltage V(BR)CBO 40 - V - IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 25 - - V IC=0.1mA, IB=0 Emitter Base Breakdown Voltage V(BR)EBO 5 - - V IE=100µA, IC=0 Collector cut-off current µA ICBO - - 0.1 VCB=40V, IE=0 Emitter cut-off current µA - - 0.1 ICEO VCE=20V, IE=0 Emitter cut-off current µA IEBO - - 0.1 VEB=5V, IC=0 WEITRON 1/4 19-Jul-05 http://www.weitron.com.tw SS8050 ON

1.47. m8050lt1.pdf Size:325K _wietron

8050
8050
M8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 800 300 2.4 417 0.1 25 100 40 5.0 100 0.15 u 35 u 4.0 0.15 WEITRON 1/4 15-Jul-10 http://www.weitron.com.tw M8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max UnitM Min ON CHARACTERISTICS DC Current Gain - (IC=100 mAdc, VCE=1.0 Vdc) hFE (1) 600 100 Collector-Emitter Saturation Voltage VCE(sat) - 0.5 Vdc (IC=800 mAdc, IB=80mAdc) CLASSIFICATION OF h FE(1) P Rank Q R S Range 100-200 200-400 300-600 150-300 1YC 80S 80P Marking 1YE WEITRON 2/4 15-Jul-10 http://www.weitron.com.tw M8050LT1 1000 1 CE V =1V 100 0.1 10 VCE(sat) @ IC=10IB 1 0.01 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 Collector Current (mA) Collector Current (mA) FIG.1 - Current Gain & Collector Current FIG.2 - Saturation Voltage & Collector Current 1000 1 VCE=10V VBE(ON) @ VCE=1V 100 10 0.1

1.48. 8050slt1.pdf Size:478K _willas

8050
8050
FM120-M WILLAS 8050SLT1THRU SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Prod Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (NPN) SOD-123H • Low profile surface mounted application in order to optimize board space. SOT-23 FEATURES • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. 0.071(1.8) 1. BASE • Ultra high-speed switching. 0.056(1.4) 2. EMITTER • Silicon epitaxial planar chip, metal silicon junction. Collector Current: ICt=0.5A 3. COLLECTOR • Lead-free par s meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" MARKING: J3Y Halogen free pro

1.49. 8050plt1_8050qlt1_8050rlt1.pdf Size:404K _willas

8050
8050
FM120-M WILLAS THRU 8050xLT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to NPN Silicon optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. FEATURErge capability. • High su High current capacity in compact package. • Guardring for overvoltage protection. IC 0.071(1.8) • Ul = 0.8A. tra high-speed switching. 0.056(1.4) Epitaxial planar type. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of NPN complement: 8050 MIL-STD-19500 /228 SOT–23 • RoHS product for packing code suffix "G" Halogen

1.50. 8050hxlt1.pdf Size:291K _willas

8050
8050
FM120-M WILLAS 8050HxLT1 THRU General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to NPN Silicon optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. FEATURE • High surge capability. High current capacity in compact package. • Guardring for overvoltage protection. IC 0.071(1.8) • Ul =1.5A.h-speed switching. tra hig 0.056(1.4) Epitaxial planar type. • Silicon epitaxial planar chip, metal silicon junction. NPN complement: 8050H • Lead-free parts meet environmental standards of MIL-STD-19500 /228 We declare that the material of product compliance with RoHS requ

1.51. he8050.pdf Size:46K _hsmc

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8050
Spec. No. : HE6112 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2004.11.29 MICROELECTRONICS CORP. Page No. : 1/4 HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...................................................................................................................... 1 W • Maximum Voltages and Currents (TA=25°C)

1.52. he8050s.pdf Size:54K _hsmc

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8050
Spec. No. : HE6110 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2004.07.26 MICROELECTRONICS CORP. Page No. : 1/5 HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applications. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ................................................................................................................

1.53. hmbt8050.pdf Size:43K _hsmc

8050
8050
Spec. No. : HE6812 HI-SINCERITY Issued Date : 1992.08.25 Revised Date :2010.10.19 MICROELECTRONICS CORP. Page No. : 1/4 HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current hFE=150-400 at IC=150mA • Complementary to HMBT8550 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage...............

1.54. ha8050s.pdf Size:54K _hsmc

8050
8050
Spec. No. : HE6116 HI-SINCERITY Issued Date : 1997.09.08 Revised Date : 2005.01.20 MICROELECTRONICS CORP. Page No. : 1/5 HA8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features • High DC Current Gain (hFE=100~500 at IC=150mA) • Complementary to HA8550S Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ....................

1.55. ha8050.pdf Size:54K _hsmc

8050
8050
Spec. No. : HE6107 HI-SINCERITY Issued Date : 1998.09.05 Revised Date : 2004.11.29 MICROELECTRONICS CORP. Page No. : 1/5 HA8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) • Complementary to HA8550 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................................ +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)................................................................................................... 1 W Total Power Dissipation (TC=25°C).........................................

1.56. btn8050a3.pdf Size:265K _cystek

8050
8050
Spec. No. : C223A3 Issued Date : 2003.07.30 CYStech Electronics Corp. Revised Date : 2013.05.21 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTN8050A3 Description The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • High collector current , I = 1.5A C • Low V CE(sat) • Complementary to BTP8550A3. • Pb-free lead plating and halogen-free package Symbol Outline BTN8050A3 TO-92 B:Base C:Collector E:Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1.5 A Base Current IB 0.5 A Power Dissipation Pd 625 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTN8050A3 CYStek Product Specification Spec. No. : C223A3 Issued Date : 2003.07.30 CYStech Electronics Corp. Revised

1.57. btn8050ba3.pdf Size:264K _cystek

8050
8050
Spec. No. : C223A3-B Issued Date : 2004.02.18 CYStech Electronics Corp. Revised Date : 2012.10.03 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTN8050BA3 Description The BTN8050BA3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • High collector current , I = 1.5A C • Low V CE(sat) • Complementary to BTP8550BA3. • Pb-free lead plating and halogen-free package Symbol Outline BTN8050BA3 TO-92 B:Base C:Collector E:Emitter E B C Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation Pd 0.625 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTN8050BA3 CYStek Product Specification Spec. No. : C223A3-B Issued Date : 2004.02.18 CYStech Electronics Corp. Revised Date : 2012.1

See also transistors datasheet: 71T2 , 72T2 , 73T2 , 74T2 , 7NU73 , 7NU74 , 8003BBA , 8003BBB , D882 , 80DA020D , 810BLY-A , 8550 , 9003 , 9010 , 9011 , 9011D , 9011E .

Keywords

 8050 Datasheet  8050 Datenblatt  8050 RoHS  8050 Distributor
 8050 Application Notes  8050 Component  8050 Circuit  8050 Schematic
 8050 Equivalent  8050 Cross Reference  8050 Data Sheet  8050 Fiche Technique

 

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