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8050 Transistor (IC) Datasheet. Cross Reference Search. 8050 Equivalent

Type Designator: 8050

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 9

Forward current transfer ratio (hFE), min: 85

Noise Figure, dB: -

Package of 8050 transistor: TO92

8050 Transistor Equivalent Substitute - Cross-Reference Search

8050 PDF:

1.1. tpca8050-h.pdf Size:185K _toshiba2

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TPCA8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPCA8050-H Switching Regulator Applications Unit: mm Motor Drive Applications 1.27 0.4 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595 Small gate charge: QSW = 10 nC (typ.) 1 A Low drain-sour

1.2. tpc8050-h_en_datasheet_090630.pdf Size:207K _toshiba2

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TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.3 m? (typ.) High forward tra

1.3. ss8050.pdf Size:157K _fairchild_semi

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SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collect

1.4. fdms8050.pdf Size:331K _fairchild_semi

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August 2014 FDMS8050 N-Channel PowerTrench® MOSFET 30 V, 200 A, 0.65 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A improve the overall efficiency and to minimize switch node Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A ringing of DC/DC converters using either synchronous or Advanced P

1.5. ss8050.pdf Size:62K _samsung

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SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. Complimentary to SS8550 Collector Current IC=1.5A Collector Dissipation:PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collec

1.6. s8050.pdf Size:173K _utc

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UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR ? DESCRIPTION The UTC S8050 is a low voltage high current small signal 1 NPN transistor, designed for Class B push-pull audio amplifier TO-92 and general purpose applications. ? FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Com

1.7. he8050.pdf Size:216K _utc

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UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR ? DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. ? FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up t

1.8. he8050l.pdf Size:19K _utc

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UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to UTC

1.9. 8050s.pdf Size:207K _utc

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UNISONIC TECHNOLOGIES CO., LTD 8050S NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR ? DESCRIPTION The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. ? FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20V *Complementary t

1.10. utc8050s.pdf Size:23K _utc

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UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V TO-92 *Complementary to UTC 8550S 1:EMITTER 2:

1.11. sps8050.pdf Size:199K _auk

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SPS8050 Semiconductor Semiconductor NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6?(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code SPS805

1.12. sts8050.pdf Size:237K _auk

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STS8050 NPN Silicon Transistor Descriptions PIN Connection • High current application C • Radio in class B push-pull operation B Feature E • Complementary pair with STS8550 TO-92 Ordering Information Type NO. Marking Package Code STS8050 STS8050 TO-92 Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 30 V Coll

1.13. s8050m.pdf Size:863K _no

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S8050M(BR3DG8050M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 与 S8550M(BR3CG8550M)互补。 Complementary pair with S8550M(BR3CG8550M). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circu

1.14. 8050sst.pdf Size:331K _secos

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8050SST 1.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? General Purpose Switching and Amplification. G H ?Emitter ?Collector ?Base J CLASSIFICATION OF hFE (1) A D Millimeter Product-Rank 8050SST-B 8050SST-C 8050SST-D REF. B Min. Max. A 4.40 4.70 Rang

1.15. s8050.pdf Size:192K _secos

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S8050 NPN Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8550 B 1.200 1.400 1 Base C 0.890 1.110 2 Collector Current: IC=0.5A Emitter D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.600 S

1.16. ss8050w.pdf Size:258K _secos

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SS8050W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM : 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM : 1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO : 40 V S Top V

1.17. ss8050.pdf Size:310K _secos

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SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L ? Complimentary to SS8550 3 3 Top View ? Power Dissipation C B 1 1 2 PCM : 0.3W 2 K E ? Collector Current ICM : 1.5A D Collector H J ? Collector - Base Voltage F G ?? V(BR)CBO : 40V ? Operating & Sto

1.18. s8050t.pdf Size:386K _secos

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S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current: IC = 0.5 A 1 2 3 2.54 0.1 1: Emitter 2: Base 3: Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Pa

1.19. m8050.pdf Size:365K _secos

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M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A ? Power dissipation L 3 3 Top View C B MARKING 1 1 2 Product Marking Code 2 K E M8050 Y11 D H J F G PACKAGE INFORMATION Millimeter Millimeter Package MPQ Leader Size REF. REF. Min. Max.

1.20. ss8050t.pdf Size:105K _secos

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SS8050T NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM : 1 W Collector Current ICM : 1.5 A 1 Collector-base voltage 2 3 V(BR)CBO : 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg : - 55 C ~ + 150 C 1. EMITTER 2 2. BASS 3 . COLLECTOR

1.21. cmbt8050.pdf Size:132K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION (NPN) 1 = BASE SOT-23 2 = EMITTER 3 = COLLECTOR 3 Formed SMD Package 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 25 V Emitter Base Voltage VEB

1.22. cn8050_cn8550_c_d.pdf Size:227K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS CN8050 NPN CN8550 PNP TO-92 Plastic Package C B E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 6.0 V IC Collector Current 800 mA ICM Peak Collecto

1.23. mps8050s.pdf Size:391K _kec

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SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 ~ 0.10 L 0.55 VCBO Collector-Base Vo

1.24. mps8050.pdf Size:45K _kec

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SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to MPS8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25?) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 40 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 25 V _ H J 14.00 + 0.5

1.25. ktc8050s.pdf Size:393K _kec

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SEMICONDUCTOR KTC8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 ~ 0.10 VCBO Collector-Base Voltage 3

1.26. ktc8050a.pdf Size:48K _kec

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SEMICONDUCTOR KTC8050A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to KTC8550A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25?) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.00 + 0

1.27. ktc8050.pdf Size:38K _kec

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SEMICONDUCTOR KTC8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.00 + 0.50

1.28. c8050b_c8050c_c8050d.pdf Size:120K _usha

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Transistors C8050

1.29. s8050.pdf Size:526K _htsemi

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S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissi

1.30. pxt8050.pdf Size:471K _htsemi

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PXT8 050 TRANSISTOR(NPN) SOT-89 FEATURES Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ Junction Tem

1.31. ss8050.pdf Size:888K _htsemi

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SS8 050 SOT-23 TRANSISTOR(NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junctio

1.32. m8050.pdf Size:479K _htsemi

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M8050 TRANSISTOR(NPN) SOT-23 FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.2 W Tj Junction Temp

1.33. s8050.pdf Size:292K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ?

1.34. ss8050.pdf Size:292K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ?

1.35. m8050.pdf Size:292K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ?

1.36. mmt8050.pdf Size:292K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ?

1.37. s8050a.pdf Size:292K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ?

1.38. ss8050_to-92.pdf Size:168K _lge

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SS8050(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM : 1 W (TA=25?) : 2 W (TC=25?) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector

1.39. 8050s_to-92.pdf Size:181K _lge

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8050S(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.32 2.92 5.33 MIN Features Complimentary to 8550S 3.43 Collector current: IC=0.5A MIN 2.41 2.67 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter 3.18 Value Units 2.03 4.19 2.67 VCBO Collector-Base Voltage 40 V 1.14 1.40 VCEO Collector-Emitter Voltage 2

1.40. pxt8050.pdf Size:218K _lge

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PXT8050 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 3. EMITTER SOT-89 4.6 B 4.4 1.6 1.8 Features 1.4 1.4 Compliment to PXT8550 2.6 4.25 2.4 3.75 0.8 MARKING: Y1 MIN 0.53 0.40 0.48 0.44 2x) 0.13 B MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.35 0.37 1.5 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Volta

1.41. s8050_to-92.pdf Size:566K _lge

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S8050(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complimentary to S8550 Collector current: IC=0.5A MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in inch

1.42. ss8050_sot-23.pdf Size:323K _lge

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SS8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC C

1.43. m8050_sot-23.pdf Size:234K _lge

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M8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y11 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Coll

1.44. s8050_sot-23.pdf Size:208K _lge

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S8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Cu

1.45. m8050_to-92.pdf Size:200K _lge

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M8050(NPN) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 625 mW Dimensions in inc

1.46. m8050lt1.pdf Size:325K _wietron

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M8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 800 300 2.4 417 0.1 25 100 40 5.0 100 0.15 u 35 u 4.0 0.15 WEITRON 1/4 15-Jul-10 http://www.weitron.com.tw M8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max UnitM Min ON CHARACTERISTICS DC Current Gain - (I

1.47. s8050.pdf Size:2028K _wietron

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S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temperatu

1.48. ss8050.pdf Size:223K _wietron

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SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25?C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation TA=25°C PD W 1.0 TJ,Tstg Junction and

1.49. ss8050lt1.pdf Size:165K _wietron

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SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 1500 300 2.4 417 0.1 25 40 100 5.0 100 u 0.15 35 0.15 u 4.0 WEITRON 27-Jul-2012 1/2 http://www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain

1.50. 8050plt1_8050qlt1_8050rlt1.pdf Size:404K _willas

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FM120-M WILLAS THRU 8050xLT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to NPN Silicon op

1.51. 8050hxlt1.pdf Size:291K _willas

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FM120-M WILLAS 8050HxLT1 THRU General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to NPN Silicon op

1.52. 8050slt1.pdf Size:478K _willas

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FM120-M WILLAS 8050SLT1THRU SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Prod Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (NPN) SOD-123H • Low profile surface mounted application in o

1.53. he8050.pdf Size:46K _hsmc

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Spec. No. : HE6112 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2004.11.29 MICROELECTRONICS CORP. Page No. : 1/4 HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) Abs

1.54. hmbt8050.pdf Size:43K _hsmc

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8050

Spec. No. : HE6812 HI-SINCERITY Issued Date : 1992.08.25 Revised Date :2010.10.19 MICROELECTRONICS CORP. Page No. : 1/4 HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current hFE=150-400 at IC=150mA • Complementary to HMBT8550 Absolute Maximum Ratings • Maximum Temperatur

1.55. ha8050s.pdf Size:54K _hsmc

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8050

Spec. No. : HE6116 HI-SINCERITY Issued Date : 1997.09.08 Revised Date : 2005.01.20 MICROELECTRONICS CORP. Page No. : 1/5 HA8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features • High DC Current Gain (hFE=100~500 at IC=150mA) • Complementary to HA8550S Absolute Maximum Ratings • Maximum Temperatures

1.56. he8050s.pdf Size:54K _hsmc

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Spec. No. : HE6110 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2004.07.26 MICROELECTRONICS CORP. Page No. : 1/5 HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applications. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ......................................................................

1.57. ha8050.pdf Size:54K _hsmc

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Spec. No. : HE6107 HI-SINCERITY Issued Date : 1998.09.05 Revised Date : 2004.11.29 MICROELECTRONICS CORP. Page No. : 1/5 HA8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) •

1.58. btn8050a3.pdf Size:265K _cystek

8050
8050

Spec. No. : C223A3 Issued Date : 2003.07.30 CYStech Electronics Corp. Revised Date : 2013.05.21 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTN8050A3 Description The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • High collector current , I = 1.5A C • Low V CE(sat) • Complementary t

1.59. btn8050ba3.pdf Size:264K _cystek

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8050

Spec. No. : C223A3-B Issued Date : 2004.02.18 CYStech Electronics Corp. Revised Date : 2012.10.03 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTN8050BA3 Description The BTN8050BA3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • High collector current , I = 1.5A C • Low V CE(sat) • Complementa

1.60. ss8050.pdf Size:284K _can-sheng

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8050

TO-92 Plastic-Encapsulate Transistors FEATURES TO-92 Power dissipation PCM : 1 W (TA=25℃) 1.EMITTER : 2 W (TC=25℃) 2.BASE MAXIMUM RATINGS 3.COLLECTOR MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS 1 2 3 Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units VCBO 40 V VCBO VCBO Co

1.61. s8050_to-92.pdf Size:251K _can-sheng

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 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current::Ic=0.5A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO

1.62. s8050_sot-23_8325.pdf Size:260K _can-sheng

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 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current:Ic=0.5A MARKING:J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单

1.63. ss8050_y1_sot-23.pdf Size:550K _can-sheng

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 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING:Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base

1.64. l8050m.pdf Size:407K _blue-rocket-elect

8050
8050

L8050M Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 与 L8550M 互补。 Complementary pair with L8550M. 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2

1.65. 8050w.pdf Size:805K _blue-rocket-elect

8050
8050

8050W(BR3DA8050W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package. 特征 / Features 与 8550W(BR3CA8550W)互补。 Complementary pair with 8550W(BR3CA8550W). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circui

1.66. s8050w.pdf Size:904K _blue-rocket-elect

8050
8050

S8050W(BR3DG8050W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package. 特征 / Features 与 S8550W(BR3CG8550W)互补。 Complementary pair with S8550W(BR3CG8550W). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Cir

1.67. 8050t.pdf Size:402K _blue-rocket-elect

8050
8050

8050T(BR3DA8050T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 与 8550T(BR3CA8550T)互补。 Complementary pair with 8550T(BR3CA8550T). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit

1.68. s8050m.pdf Size:862K _blue-rocket-elect

8050
8050

S8050M(BR3DG8050M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 与 S8550M(BR3CG8550M)互补。 Complementary pair with S8550M(BR3CG8550M). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circu

1.69. 8050m.pdf Size:379K _blue-rocket-elect

8050
8050

8050M(BR3DA8050M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 与 8550M(BR3CA8550M)互补。 Complementary pair with 8550M(BR3CA8550M). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit

1.70. s8050a.pdf Size:420K _blue-rocket-elect

8050
8050

S8050A(BR3DG8050AK) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features PC, IC 大,与 S8550A(BR3CG8550AK)互补。 High PC and IC, complementary pair with S8550A(BR3CG8550AK). 用途 / Applications 用于乙类推挽功放。 Amplifier of portable radios in class B pu

1.71. l8050.pdf Size:597K _blue-rocket-elect

8050
8050

L8050(BR3DA8050K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features PC, IC 大,与 L8550(BR3CA8550K)互补。 High PC and IC, complementary pair with L8550(BR3CA8550K). 用途 / Applications 用于 2W 乙类推挽功放。 2W output amplifier of portable radios in cl

1.72. st8050-2a.pdf Size:385K _semtech

8050
8050

ST 8050 (2A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit C

1.73. st8050-1.5a.pdf Size:442K _semtech

8050
8050

ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Uni

1.74. l8050qlt1g.pdf Size:70K _lrc

8050
8050

LESHAN RADIO COMPANY, LTD. L8050PLT1G General Purpose Transistors Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. Epitaxial planar type. 3 NPN complement: L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PPA

1.75. lx8050qlt1g.pdf Size:64K _lrc

8050
8050

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LX8050PLT1G NPN Silicon Series S-LX8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.5A. Epitaxial planar type. 3 NPN complement: LX8050 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1 Control Change Requirements; AEC-Q101 Qualified and PPAP

1.76. lh8050qlt1g.pdf Size:211K _lrc

8050
8050

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE Series High current capacity in compact package. IC =1.5A. 3 Epitaxial planar type. NPN complement: LH8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 Control Change Requirements; AEC-Q101 Qualified and

1.77. l8050hqlt1g.pdf Size:88K _lrc

8050
8050

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement: L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

1.78. l8050hplt1g.pdf Size:101K _lrc

8050
8050

LESHAN RADIO COMPANY, LTD. L8050HQLTIG General Purpose Transistors Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement: L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and

1.79. l8050plt1g.pdf Size:77K _lrc

8050
8050

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050PLT1G Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. 3 Epitaxial planar type. NPN complement: L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PP

1.80. l8050hrlt1g.pdf Size:84K _lrc

8050
8050

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE High current capacity in compact package. Series IC =1.5 A. Epitaxial planar type. 3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qualified and P

1.81. ftc8050.pdf Size:222K _first_silicon

8050
8050

SEMICONDUCTOR FTC8050 TECHNICAL DATA TRANSISTOR (NPN) FTC8050 B C FEATURES Complimentary to FTA8550 Collector current: IC=0.5A DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) C 3.70 MAX D D 0.55 MAX Symbol Parameter Value Unit E 1.00 F 1.27 G 0.85 VCBO Collector-Base Voltage 40 V H 0.45 _ H J 14.00 0.50 + VCEO Col

1.82. ftc8050h.pdf Size:352K _first_silicon

8050
8050

SEMICONDUCTOR FTC8050H TECHNICAL DATA General Purpose Transistors NPN Silicon FEATURE 3 High current capacity in compact package. I C =1.5A. 1 Epitaxial planar type. 2 PNP complement: FTA8550H Pb-Free Package is available. SOT–23 COLLECTOR DEVICE MARKING AND ORDERING INFORMATION 3 Shipping Device Marking 1 FTC8050H 1FC 3000/Tape&Reel BASE 2 E

1.83. kst8050s.pdf Size:970K _kexin

8050
8050

SMD Type Transistors SMD Type NPN Transistors KST8050S SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current: IC=0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5

1.84. kst8050.pdf Size:1008K _kexin

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SMD Type Transistors SMD Type NPN Transistors KST8050 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current: IC=1.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V

1.85. kst8050m.pdf Size:810K _kexin

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SMD Type SMD Type Transistors NPN Transistors KST8050M SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current: IC=0.8A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Bas

1.86. kst8050d-50.pdf Size:1155K _kexin

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SMD Type Transistors SMD Type NPN Transistors KST8050D-50 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features ● Collector Current Capability IC=1.2A ● Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collec

1.87. h8050.pdf Size:788K _kexin

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SMD Type Transistors NPN Transistors H8050 ■ Features 1.70 0.1 ● Collector Power Dissipation: PC=1W ● Collector Current: IC=1.5A Comlementary to H8550 ● 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V C

1.88. kst8050x.pdf Size:594K _kexin

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8050

SMD Type Transistors NPN Transistors KST8050X SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Power Dissipation: PC=0.3W ● Collector Current: IC=1.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitte

1.89. s8050.pdf Size:180K _shenzhen-tuofeng-semi

8050
8050

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 1 2 3 V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

1.90. ss8050.pdf Size:752K _shenzhen-tuofeng-semi

8050
8050

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25℃) 3. COLLECTOR : 2 W (TC=25℃) 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Volt

1.91. s8050lt1.pdf Size:262K _shenzhen-tuofeng-semi

8050
8050

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8050LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25℃) 1. 3 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Unit: mm Operating and storage junction temperature range TJ, Tstg:

1.92. ss8050lt1.pdf Size:961K _shenzhen-tuofeng-semi

8050
8050

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.3 W ( Tamb=25℃) 1. 3 Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 25 V Operating and storage junction temperature range Unit: mm TJ, Tst

See also transistors datasheet: 71T2 , 72T2 , 73T2 , 74T2 , 7NU73 , 7NU74 , 8003BBA , 8003BBB , D882 , 80DA020D , 810BLYA , 8550 , 9003 , 9010 , 9011 , 9011D , 9011E .

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