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List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
8050 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

8050 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 8050

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 9

Forward current transfer ratio (hFE), min: 85

Noise Figure, dB: -

Package of 8050 transistor: TO92

8050 Equivalent Transistors - Cross-Reference Search

8050 PDF doc:

1.1. tpca8050-h.pdf Size:185K _toshiba2

8050
8050
TPCA8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPCA8050-H Switching Regulator Applications Unit: mm Motor Drive Applications 1.27 0.4 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595 Small gate charge: QSW = 10 nC (typ.) 1 A Low drain-source ON-resistance: RDS (ON) = 9.0 m? (typ.) High forward transfer admittance: |Yfs| = 70 S (typ.) 5.0 0.2 Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 4.25 0.2 Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V 8 5 Gate-source voltage VGSS 20 V DC (Note 1) ID 24 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) IDP 72 JEDEC ? Drain power dissipation (Tc = 25?

1.2. tpc8050-h_en_datasheet_090630.pdf Size:207K _toshiba2

8050
8050
TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.3 m? (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V Gate-source voltage VGSS 20 V JEDEC ? DC (Note 1) ID 11 Drain current A JEITA ? Pulsed (Note 1) IDP 44 Drain power dissipation (t = 10 s) TOSHIBA 2-6J1B PD 1.9 W (Note 2a) Weight: 0.085g (typ.) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Single-pulse avalan

1.3. ss8050.pdf Size:157K _fairchild_semi

8050
8050
SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100A, IE=0 40 V BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 V BVEBO Emitter-Base Breakdown Voltage IE=100A, IC=0 6 V ICBO Collector Cut-off Current VCB=35V, IE=0 100 nA IEBO Emitter Cut-off Current VEB=6V, IC=0 100 nA hFE1 DC Curren

1.4. fdms8050.pdf Size:331K _fairchild_semi

8050
8050
August 2014 FDMS8050 N-Channel PowerTrench® MOSFET 30 V, 200 A, 0.65 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A improve the overall efficiency and to minimize switch node Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low rDS(on) conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on). and high efficiency MSL1 robust package design Applications 100% UIL tested OringFET RoHS Compliant Synchronous Rectifier Bottom Top Pin 1 S S D S Pin 1 S G D S D S D D D D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous TC = 25 °C 200 ID -Conti

1.5. ss8050.pdf Size:62K _samsung

8050
8050
SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. Complimentary to SS8550 Collector Current IC=1.5A Collector Dissipation:PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1.5 A Collector Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0 25 V Emitter-Base Breakdown Voltage BVEBO IE=100 , IC=0 V 6 Collector Cut-off Current ICBO VCB=35V, IE=0 100 nA Emitter Cut-off Current IEBO VEB=6V, IC=0 100 nA DC Current Gain hFE1 VCE=1V, IC=5mA 45 135 hFE2 VCE=1V, IC=100mA 85 1

1.6. s8050.pdf Size:173K _utc

8050
8050
UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR ? DESCRIPTION The UTC S8050 is a low voltage high current small signal 1 NPN transistor, designed for Class B push-pull audio amplifier TO-92 and general purpose applications. ? FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to S8550 ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 S8050L-x-T92-B S8050G-x-T92-B TO-92 E B C Tape Box S8050L-x-T92-K S8050G-x-T92-K TO-92 E B C Bulk Note: Pin Assignment: E: Emitter B: Base C: Collector ? MARKING INFORMATION PACKAGE MARKING TO-92 www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R201-013.D S8050 NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Co

1.7. he8050.pdf Size:216K _utc

8050
8050
UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR ? DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. ? FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25V *Complimentary to UTC HE8550 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 HE8050L-x-AB3-R HE8050G-x-AB3-R SOT-89 B C E Tape Reel HE8050L-x-AE3-R HE8050G-x-AE3-R SOT-23 E B C Tape Reel HE8050L-x-T92-B HE8050G-x-T92-B TO-92 E C B Tape Box HE8050L-x-T92-K HE8050G-x-T92-K TO-92 E C B Bulk HE8050L-x-T9N-B HE8050G-x-T9N-B TO-92NL E C B Tape Box HE8050L-x-T9N-K HE8050G-x-T9N-K TO-92NL E C B Bulk Note: Pin Assignment: B: Base C: Collector E: Emitter www.unisonic.com.tw 1 of 5 QW-R211-018. F Copyright © 2014 Unisonic Te

1.8. he8050l.pdf Size:19K _utc

8050
8050
UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to UTC HE8550 TO-92L 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Dissipation(Ta=25C) Pc 1 W Collector Current Ic 1.5 A Junction Temperature Tj 150 C Storage Temperature TSTG -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=100A,IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO I

1.9. 8050s.pdf Size:207K _utc

8050
8050
UNISONIC TECHNOLOGIES CO., LTD 8050S NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR ? DESCRIPTION The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. ? FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20V *Complementary to UTC 8550S ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 8050SL-x-AE3-R 8050SG-x-AE3-R SOT-23 E B C Tape Reel 8050SL-x-T92-B 8050SG-x-T92-B TO-92 E C B Tape Box 8050SL-x-T92-K 8050SG-x-T92-K TO-92 E C B Bulk ? MARKING INFORMATION PACKAGE MARKING SOT-23 TO-92 www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R206-001.H 8050S NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collecto

1.10. utc8050s.pdf Size:23K _utc

8050
8050
UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V TO-92 *Complementary to UTC 8550S 1:EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Dissipation(Ta=25 ) Pc 1 W Collector Current Ic 800 mA Junction Temperature Tj 150 C Storage Temperature TSTG -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=100A,IE=0 30 V Collector-Emitter Breakdown Voltage BVCEO Ic=1mA,IB=0 20 V Emitter-Ba

1.11. sps8050.pdf Size:199K _auk

8050
8050
SPS8050 Semiconductor Semiconductor NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6?(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code SPS8050 SPS8050 TO-92 Outline Dimensions unit : mm 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9104-002 1 SPS8050 Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 12 V Emitter-base voltage VEBO 6.5 V Collector current IC 1.5 A Collector dissipation PC 625 mW Junction temperature TJ 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO IC=50µA, IE=0 15 - - V Collecto

1.12. sts8050.pdf Size:237K _auk

8050
8050
STS8050 NPN Silicon Transistor Descriptions PIN Connection • High current application C • Radio in class B push-pull operation B Feature E • Complementary pair with STS8550 TO-92 Ordering Information Type NO. Marking Package Code STS8050 STS8050 TO-92 Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 6 V Collector current IC 800 mA Emitter current IE -800 mA Collector power dissipation PC 625 mW Junction temperature TJ 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO IC=500?A, IE=0 30 - - V Collector-emitter breakdown voltage BVCEO IC=1mA, IB=0 25 - - V Collector cut-off current ICBO VCB=15V, IE=0 - - 50 nA DC current gain hFE* VCE=1V, IC=50mA 85 - 300 - Collector-emitter saturation

1.13. s8050m.pdf Size:863K _no

8050
8050
S8050M(BR3DG8050M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 与 S8550M(BR3CG8550M)互补。 Complementary pair with S8550M(BR3CG8550M). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector 放大及印章代码 / hFE Classifications & Marking hFE Classifications B C D Symbol hFE Range 85~160 120~200 160~300 Marking HY3B HY3C HY3D http://www.fsbrec.com 1 / 6 S8050M(BR3DG8050M) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 6.0 V Collector Current IC 800 mA Base Current IB

1.14. 8050sst.pdf Size:331K _secos

8050
8050
8050SST 1.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? General Purpose Switching and Amplification. G H ?Emitter ?Collector ?Base J CLASSIFICATION OF hFE (1) A D Millimeter Product-Rank 8050SST-B 8050SST-C 8050SST-D REF. B Min. Max. A 4.40 4.70 Range 85~160 120~200 160~300 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ?? ?? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 1.5 A Collector Power Dissipation PC 1 W Thermal Resistance From Junction to Ambient R?JA 125 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECT

1.15. s8050.pdf Size:192K _secos

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8050
S8050 NPN Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8550 B 1.200 1.400 1 Base C 0.890 1.110 2 Collector Current: IC=0.5A Emitter D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.600 S Top View B 12 L 0.890 1.020 S 2.100 2.500 MARKING: J3Y V G V 0.450 0.600 All Dimension in mm C H J D K O MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown volt

1.16. ss8050w.pdf Size:258K _secos

8050
8050
SS8050W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM : 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM : 1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO : 40 V S Top View B K 0.350 0.500 Operating & storage junction temperature 1 2 L 0.590 0.720 O O Tj, Tstg : - 55 C ~ + 150 C S 2.000 2.400 V G V 0.280 0.420 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 25 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100?A, I =0 E C Collector cut-off current I V =40 V , I =0 0.1 CBO CB E ?A Collector cut-off cu

1.17. ss8050.pdf Size:310K _secos

8050
8050
SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L ? Complimentary to SS8550 3 3 Top View ? Power Dissipation C B 1 1 2 PCM : 0.3W 2 K E ? Collector Current ICM : 1.5A D Collector H J ? Collector - Base Voltage F G ?? V(BR)CBO : 40V ? Operating & Storage junction temperature Millimeter Millimeter REF. REF. Min. Max. Min. Max. TJ, TSTG : -55? ~ +150? ?? A 2.70 3.04 G - 0.18 Base B 2.10 2.80 H 0.40 0.60 MARKING : Y1 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 ?? Emitter MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 1.5 A Collector Power Dissapation PC 0.3 W Junction, Storage Temperature TJ, TSTG 15

1.18. s8050t.pdf Size:386K _secos

8050
8050
S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current: IC = 0.5 A 1 2 3 2.54 0.1 1: Emitter 2: Base 3: Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 5 V mA Collector Currrent IC 500 Total Power Dissipation PD 625 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base Breakdown Voltage V(BR)CBO 40 - - V IC = 100 ?A, IE = 0 Collector-emitter Breakdown Voltage V(BR)CEO 25 - - V IC = 0.1 mA, IB = 0 Emitter-base Breakdown Voltage V(BR)EBO 5 - - V IE = 100 ?A

1.19. m8050.pdf Size:365K _secos

8050
8050
M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A ? Power dissipation L 3 3 Top View C B MARKING 1 1 2 Product Marking Code 2 K E M8050 Y11 D H J F G PACKAGE INFORMATION Millimeter Millimeter Package MPQ Leader Size REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18 SOT-23 3K 7 inch B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 CLASSIFICATION OF hFE(2) Collector Product-Rank M8050-L ?? Range 80-300 ?? Base ?? Emitter MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 6 V Collector Current - Continuous IC 0.8 A Collector Power Dissipation PC 0.2 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELE

1.20. ss8050t.pdf Size:105K _secos

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8050
SS8050T NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM : 1 W Collector Current ICM : 1.5 A 1 Collector-base voltage 2 3 V(BR)CBO : 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg : - 55 C ~ + 150 C 1. EMITTER 2 2. BASS 3 . COLLECTOR 3 O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 25 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100?A, I =0 E C Collector cut-off current I V =40 V , I =0 0.1 CBO CB E ?A Collector cut-off current I V =20V , I =0 0.1 CEO CE B ?A Emitter cut-off current I V =5V, I =0 0.1 EBO EB C ?A H V =1V, I = 100mA 85 400 FE(1) CE C DC current gain H V =1V, I = 800mA 40 FE(2) CE

1.21. cmbt8050.pdf Size:132K _cdil

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8050
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION (NPN) 1 = BASE SOT-23 2 = EMITTER 3 = COLLECTOR 3 Formed SMD Package 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 25 V Emitter Base Voltage VEBO 6 V Collector Current Continuous IC 800 mA Collector Dissipation @ Ta=25?C PC 250 mW Operating And Storage Junction Tj, Tstg - 55 to +125 ?C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Base Voltage VCBO IC=100µA, IE=0 30 V Collector Emitter Voltage VCEO IC=10mA, IB=0 25 V VEBO Emitter Base Voltage IE=10µA, IC=0 6 V Collector Cut Off Current ICBO VCB=15V, IE=0 50 nA Emitter Cut Off Current IEBO VEB=4V, IC=0 500 nA DC Current Gain hFE *IC=50mA, VCE=1V 100 400 IC=350mA, VCE=1V

1.22. cn8050_cn8550_c_d.pdf Size:227K _cdil

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8050
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS CN8050 NPN CN8550 PNP TO-92 Plastic Package C B E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 6.0 V IC Collector Current 800 mA ICM Peak Collector Current 1.0 A IB Base Current 100 mA Power Dissipation@ Ta=25?C *Ptot 625 mW Tj Junction Temperature 150 ?C Tstg Storage Temperature Range - 55 to +150 ?C THERMAL RESISTANCE *Rth (j-a) Junction to Ambient in free air 200 K/W * Valid provided that leads are kept at ambient temperature at a distance of 2mm from case. ELECTRICAL CHARACTERISTICS (Ta=25?C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS VCEO IC=2mA, IB=0 Collector Emitter Voltage 25 V VCBO Collector Base Voltage IC=10µA, IE=0 40 V VEBO Emitter Base Voltage IE=100µA, IC=0 6 V hF

1.23. mps8050s.pdf Size:391K _kec

8050
8050
SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 ~ 0.10 L 0.55 VCBO Collector-Base Voltage 40 V P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO Collector-Emitter Voltage 25 V P 7 VEBO Emitter-Base Voltage 6 V M IC Collector Current 1.5 A 1. EMITTER PC * Collector Power Dissipation 350 mW 2. BASE Tj Junction Temperature 150 3. COLLECTOR Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) SOT-23 Marking hFE Rank Lot No. Type Name BH ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 100 nA IEBO VEB=6V, IC=0 Emitter Cut-off Curren

1.24. mps8050.pdf Size:45K _kec

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8050
SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to MPS8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25?) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 40 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 25 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage 6 V L 2.30 M 0.45 MAX IC Collector Current 1.5 A N 1.00 1 2 3 625 1. EMITTER PC* Collector Power Dissipation mW 2. BASE 400 3. COLLECTOR Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range TO-92 *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 100 nA IEBO VEB=6V, IC=0 Emitter Cut-off Current - - 100 nA V(BR)CBO A, IE=0 Collector-Base Breakdown Voltage IC=100? 40 - -

1.25. ktc8050s.pdf Size:393K _kec

8050
8050
SEMICONDUCTOR KTC8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 ~ 0.10 VCBO Collector-Base Voltage 35 V L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO Collector-Emitter Voltage 30 V P 7 VEBO Emitter-Base Voltage 5 V M IC Collector Current 800 mA 1. EMITTER IE Emitter Current -800 mA 2. BASE PC * Collector Power Dissipation 350 mW 3. COLLECTOR Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range SOT-23 * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BK ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=15V, IE=0 Collector Cut-off Current - - 50 nA V(BR)CBO IC

1.26. ktc8050a.pdf Size:48K _kec

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8050
SEMICONDUCTOR KTC8050A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to KTC8550A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25?) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage 5 V L 2.30 M 0.45 MAX IC Collector Current 800 mA N 1.00 1 2 3 IE Emitter Current -800 mA 1. EMITTER 2. BASE PC Collector Power Dissipation 400 mW 3. COLLECTOR Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=15V, IE=0 Collector Cut-off Current - - 50 nA V(BR)CBO IC=0.5mA, IE=0 Collector-Base Breakdown Voltage 35 - - V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 30 - - V h

1.27. ktc8050.pdf Size:38K _kec

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8050
SEMICONDUCTOR KTC8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage 5 V L 2.30 M 0.45 MAX IC Collector Current 800 mA N 1.00 1 2 3 IE Emitter Current -800 mA 1. EMITTER 2. BASE PC Collector Power Dissipation 625 mW 3. COLLECTOR Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=15V, IE=0 Collector Cut-off Current - - 50 nA V(BR)CBO IC=0.5mA, IE=0 Collector-Base Breakdown Voltage 35 - - V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 30 - - V hFE(1) (Note)

1.28. c8050b_c8050c_c8050d.pdf Size:120K _usha

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8050
Transistors C8050

1.29. s8050.pdf Size:526K _htsemi

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8050
S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40 V , IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V , IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 ?A HFE(1) VCE=1V, IC= 50mA 120 350 DC cu

1.30. pxt8050.pdf Size:471K _htsemi

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8050
PXT8 050 TRANSISTOR(NPN) SOT-89 FEATURES Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Emitter cut-off current ICEO VCE=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC=100mA 85 400 DC current gain hFE(2) VCE=1V, IC=800mA 40 Col

1.31. ss8050.pdf Size:888K _htsemi

8050
8050
SS8 050 SOT-23 TRANSISTOR(NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) ? Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC= 100mA 120 400 DC current gain hFE(2) VCE=1V, I

1.32. m8050.pdf Size:479K _htsemi

8050
8050
M8050 TRANSISTOR(NPN) SOT-23 FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20V, IB=0 0.1 ?A VCE=1V, IC=5mA 45 h FE(1) DC current gain VCE=1V, IC=100mA 80 300 h FE(2) h VCE=1V, IC=800mA 40 ( ) FE 3 Collec

1.33. s8050.pdf Size:292K _gsme

8050
8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.34. ss8050.pdf Size:292K _gsme

8050
8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.35. m8050.pdf Size:292K _gsme

8050
8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.36. mmt8050.pdf Size:292K _gsme

8050
8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.37. s8050a.pdf Size:292K _gsme

8050
8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.38. ss8050_to-92.pdf Size:168K _lge

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SS8050(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM : 1 W (TA=25?) : 2 W (TC=25?) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Emitter cut-off current ICEO VCE=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC=100mA 85 400 DC cur

1.39. 8050s_to-92.pdf Size:181K _lge

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8050
8050S(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.32 2.92 5.33 MIN Features Complimentary to 8550S 3.43 Collector current: IC=0.5A MIN 2.41 2.67 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter 3.18 Value Units 2.03 4.19 2.67 VCBO Collector-Base Voltage 40 V 1.14 1.40 VCEO Collector-Emitter Voltage 25 V 2.03 2.67 VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE

1.40. pxt8050.pdf Size:218K _lge

8050
8050
PXT8050 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 3. EMITTER SOT-89 4.6 B 4.4 1.6 1.8 Features 1.4 1.4 Compliment to PXT8550 2.6 4.25 2.4 3.75 0.8 MARKING: Y1 MIN 0.53 0.40 0.48 0.44 2x) 0.13 B MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.35 0.37 1.5 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Emitter cut-

1.41. s8050_to-92.pdf Size:566K _lge

8050
8050
S8050(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complimentary to S8550 Collector current: IC=0.5A MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V,

1.42. ss8050_sot-23.pdf Size:323K _lge

8050
8050
SS8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC= 100mA 1

1.43. m8050_sot-23.pdf Size:234K _lge

8050
8050
M8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y11 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20V, IB=0 0.1 ?A VCE=1V, IC=5mA 45 h FE(1) DC current gain VCE=1V, IC=100mA 80 300 h F

1.44. s8050_sot-23.pdf Size:208K _lge

8050
8050
S8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=40 V , IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V , IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V , IC=0 0.1

1.45. m8050_to-92.pdf Size:200K _lge

8050
8050
M8050(NPN) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 625 mW Dimensions in inches and (millimeters) TJ Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC= 1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20V, IB=0 0.1 ?A hFE(1) VCE=1V, IC=5mA 45 DC current gain hFE(2) VCE=1V, IC=100mA 80 400 hFE(3) VCE=1V, I

1.46. m8050lt1.pdf Size:325K _wietron

8050
8050
M8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 800 300 2.4 417 0.1 25 100 40 5.0 100 0.15 u 35 u 4.0 0.15 WEITRON 1/4 15-Jul-10 http://www.weitron.com.tw M8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max UnitM Min ON CHARACTERISTICS DC Current Gain - (IC=100 mAdc, VCE=1.0 Vdc) hFE (1) 600 100 Collector-Emitter Saturation Voltage VCE(sat) - 0.5 Vdc (IC=800 mAdc, IB=80mAdc) CLASSIFICATION OF h FE(1) P Rank Q R S Range 100-200 200-400 300-600 150-300 1YC 80S 80P Marking 1YE WEITRON 2/4 15-Jul-10 http://www.weitron.com.tw M8050LT1 1000 1 CE V =1V 100 0.1 10 VCE(sat) @ IC=10IB 1 0.01 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 Collector Current (mA) Collector Current (mA) FIG.1 - Current Gain & Collector Current FIG.2 - Saturation Voltage & Collector Current 1000 1 VCE=10V VBE(ON) @ VCE=1V 100 10 0.1

1.47. s8050.pdf Size:2028K _wietron

8050
8050
S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temperature Tstg C -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) V(BR)CEO 25 Vdc Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) V(BR)CBO 40 - Vdc - Vdc V(BR)EBO 5.0 Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0) uAdc ICE0 Collector Cutoff Current (V = 20 Vdc, I =0) - 0.1 CE B ICBO - 0.1 uAdc Collector Cutoff Current (V = 40 Vdc, IE=0) CB - IEBO d Emitter Cutoff Current (VEB= 3.0V c, I =0) 0.1 uAdc C WEITRON http://www.weitron.com.tw S8050 ELECTRICAL CHARACTERISTICS (TA=2

1.48. ss8050.pdf Size:223K _wietron

8050
8050
SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25?C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation TA=25°C PD W 1.0 TJ,Tstg Junction and Storage, Temperature -55 to +150 °C ELECTRICAL CHARACTERISTICS (TA=25?C unless otherwise noted) Characteristics Symbol Max Unit Min Typ Collector-Base Breakdown Voltage V(BR)CBO 40 - V - IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 25 - - V IC=0.1mA, IB=0 Emitter Base Breakdown Voltage V(BR)EBO 5 - - V IE=100µA, IC=0 Collector cut-off current µA ICBO - - 0.1 VCB=40V, IE=0 Emitter cut-off current µA - - 0.1 ICEO VCE=20V, IE=0 Emitter cut-off current µA IEBO - - 0.1 VEB=5V, IC=0 WEITRON 1/4 19-Jul-05 http://www.weitron.com.tw SS8050 ON

1.49. ss8050lt1.pdf Size:165K _wietron

8050
8050
SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 1500 300 2.4 417 0.1 25 40 100 5.0 100 u 0.15 35 0.15 u 4.0 WEITRON 27-Jul-2012 1/2 http://www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - (IC=100 mAdc, VCE=1.0 Vdc) hFE 600 100 Collector-Emitter Saturation Voltage VCE(sat) - Vdc 0.5 (IC=800 mAdc, IB=80mAdc) CLASSIFICATION OF h FE P Rank Q R S Range 100-200 150-300 200-400 300-600 Marking 1HA 1HC 1HE 1HG SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 D G G 1.70 2.10 E H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L 0.30 0.61 L M J M 0.076 0.25 WEITRON 27-Jul-2012 2/2 http://www.weitron.com.tw

1.50. 8050plt1_8050qlt1_8050rlt1.pdf Size:404K _willas

8050
8050
FM120-M WILLAS THRU 8050xLT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to NPN Silicon optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. FEATURErge capability. • High su High current capacity in compact package. • Guardring for overvoltage protection. IC 0.071(1.8) • Ul = 0.8A. tra high-speed switching. 0.056(1.4) Epitaxial planar type. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of NPN complement: 8050 MIL-STD-19500 /228 SOT–23 • RoHS product for packing code suffix "G" Halogen

1.51. 8050hxlt1.pdf Size:291K _willas

8050
8050
FM120-M WILLAS 8050HxLT1 THRU General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to NPN Silicon optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. FEATURE • High surge capability. High current capacity in compact package. • Guardring for overvoltage protection. IC 0.071(1.8) • Ul =1.5A.h-speed switching. tra hig 0.056(1.4) Epitaxial planar type. • Silicon epitaxial planar chip, metal silicon junction. NPN complement: 8050H • Lead-free parts meet environmental standards of MIL-STD-19500 /228 We declare that the material of product compliance with RoHS requ

1.52. 8050slt1.pdf Size:478K _willas

8050
8050
FM120-M WILLAS 8050SLT1THRU SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Prod Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (NPN) SOD-123H • Low profile surface mounted application in order to optimize board space. SOT-23 FEATURES • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. 0.071(1.8) 1. BASE • Ultra high-speed switching. 0.056(1.4) 2. EMITTER • Silicon epitaxial planar chip, metal silicon junction. Collector Current: ICt=0.5A 3. COLLECTOR • Lead-free par s meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" MARKING: J3Y Halogen free pro

1.53. he8050.pdf Size:46K _hsmc

8050
8050
Spec. No. : HE6112 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2004.11.29 MICROELECTRONICS CORP. Page No. : 1/4 HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...................................................................................................................... 1 W • Maximum Voltages and Currents (TA=25°C)

1.54. hmbt8050.pdf Size:43K _hsmc

8050
8050
Spec. No. : HE6812 HI-SINCERITY Issued Date : 1992.08.25 Revised Date :2010.10.19 MICROELECTRONICS CORP. Page No. : 1/4 HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current hFE=150-400 at IC=150mA • Complementary to HMBT8550 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage...............

1.55. ha8050s.pdf Size:54K _hsmc

8050
8050
Spec. No. : HE6116 HI-SINCERITY Issued Date : 1997.09.08 Revised Date : 2005.01.20 MICROELECTRONICS CORP. Page No. : 1/5 HA8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features • High DC Current Gain (hFE=100~500 at IC=150mA) • Complementary to HA8550S Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ....................

1.56. he8050s.pdf Size:54K _hsmc

8050
8050
Spec. No. : HE6110 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2004.07.26 MICROELECTRONICS CORP. Page No. : 1/5 HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applications. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ................................................................................................................

1.57. ha8050.pdf Size:54K _hsmc

8050
8050
Spec. No. : HE6107 HI-SINCERITY Issued Date : 1998.09.05 Revised Date : 2004.11.29 MICROELECTRONICS CORP. Page No. : 1/5 HA8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) • Complementary to HA8550 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................................ +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)................................................................................................... 1 W Total Power Dissipation (TC=25°C).........................................

1.58. btn8050a3.pdf Size:265K _cystek

8050
8050
Spec. No. : C223A3 Issued Date : 2003.07.30 CYStech Electronics Corp. Revised Date : 2013.05.21 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTN8050A3 Description The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • High collector current , I = 1.5A C • Low V CE(sat) • Complementary to BTP8550A3. • Pb-free lead plating and halogen-free package Symbol Outline BTN8050A3 TO-92 B:Base C:Collector E:Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1.5 A Base Current IB 0.5 A Power Dissipation Pd 625 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTN8050A3 CYStek Product Specification Spec. No. : C223A3 Issued Date : 2003.07.30 CYStech Electronics Corp. Revised

1.59. btn8050ba3.pdf Size:264K _cystek

8050
8050
Spec. No. : C223A3-B Issued Date : 2004.02.18 CYStech Electronics Corp. Revised Date : 2012.10.03 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTN8050BA3 Description The BTN8050BA3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • High collector current , I = 1.5A C • Low V CE(sat) • Complementary to BTP8550BA3. • Pb-free lead plating and halogen-free package Symbol Outline BTN8050BA3 TO-92 B:Base C:Collector E:Emitter E B C Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation Pd 0.625 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C BTN8050BA3 CYStek Product Specification Spec. No. : C223A3-B Issued Date : 2004.02.18 CYStech Electronics Corp. Revised Date : 2012.1

1.60. ss8050.pdf Size:284K _can-sheng

8050
8050
TO-92 Plastic-Encapsulate Transistors FEATURES TO-92 Power dissipation PCM : 1 W (TA=25℃) 1.EMITTER : 2 W (TC=25℃) 2.BASE MAXIMUM RATINGS 3.COLLECTOR MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS 1 2 3 Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units VCBO 40 V VCBO VCBO Collector-Base Voltage VCBO VCEO 25 V VCEO VCEO Collector-Emitter Voltage VCEO VEBO 5 V VEBO VEBO Emitter-Base Voltage VEBO IC Collector Current -Continuous 1.5 A IC IC IC Tj Junction Temperature 150 ℃ Tj Tj Tj Tstg Storage Temperature -55-150 ℃ Tstg Tstg Tstg ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS Parameter Symbol Test conditions MIN TYP MAX UNIT Parameter Symbol Test conditions MIN TYP MAX UNIT Parameter Symbol Test conditions MIN TYP MAX UNIT Parameter

1.61. s8050_to-92.pdf Size:251K _can-sheng

8050
8050
 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current::Ic=0.5A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Voltage (集电极-基极电压) 40 V VCEO Collector-Emitter Voltage (集电极-发射极电压) 25 V VEBO Emitter-Base Voltage (发射极-基极电压) 5 V IC Collector Current -Continuous (集电极电流) 0.5 A PC Collector Power Dissipation (耗散功率) 0.625 W Tj Junction Temperature (结温) 150 ℃ Tstg Storage Temperature (储存温度) -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT (参数名称) (符号) (测试条件) (最小值

1.62. s8050_sot-23_8325.pdf Size:260K _can-sheng

8050
8050
 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current:Ic=0.5A MARKING:J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Voltage (集电极-基极电压) 40 V VCEO Collector-Emitter Voltage (集电极-发射极电压) 25 V VEBO Emitter-Base Voltage (发射极-基极电压) 5 V IC Collector Current -Continuous (集电极电流) 0.5 A PC Collector Power Dissipation (耗散功率) 0.3 W Tj Junction Temperature (结温) 150 ℃ Tstg Storage Temperature (储存温度) -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT (参数名称) (符号) (测试条件)

1.63. ss8050_y1_sot-23.pdf Size:550K _can-sheng

8050
8050
 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING:Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Voltage (集电极-基极电压) 40 V VCEO Collector-Emitter Voltage (集电极-发射极电压) 25 V VEBO Emitter-Base Voltage (发射极-基极电压) 5 V IC Collector Current -Continuous (集电极电流) 1.5 A PC Collector Power Dissipation (耗散功率) 0.625 W Tj Junction Temperature (结温) 150 ℃ Tstg Storage Temperature (储存温度) -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT (参数名称) (符号) (测试条件) (最小值) (典型值

1.64. l8050m.pdf Size:407K _blue-rocket-elect

8050
8050
L8050M Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 与 L8550M 互补。 Complementary pair with L8550M. 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector 放大及印章代码 / hFE Classifications & Marking hFE Classifications B C D Symbol hFE Range 85~160 120~200 160~300 Marking HY1B HY1C HY1D http://www.fsbrec.com 1 / 6 L8050M Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 20 V Emitter to Base Voltage VEBO 6.0 V Collector Current - Continuous IC 1.5 A Base Current - Continuous IB 0.5 A Collector Pow

1.65. 8050w.pdf Size:805K _blue-rocket-elect

8050
8050
8050W(BR3DA8050W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package. 特征 / Features 与 8550W(BR3CA8550W)互补。 Complementary pair with 8550W(BR3CA8550W). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector 印章代码 / Marking hFE Classifications B C D Symbol hFE Range 85~160 120~200 160~300 Marking HY1B HY1C HY1D http://www.fsbrec.com 1 / 6 8050W(BR3DA8050W) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 5.0 V Collector Current - Continuous IC 1.5 A Base Current - Continuous IB 0.

1.66. s8050w.pdf Size:904K _blue-rocket-elect

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S8050W(BR3DG8050W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package. 特征 / Features 与 S8550W(BR3CG8550W)互补。 Complementary pair with S8550W(BR3CG8550W). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector 印章代码 / Marking hFE Classifications B C D Symbol hFE Range 85~160 120~200 160~300 Marking HY3B HY3C HY3D http://www.fsbrec.com 1 / 6 S8050W(BR3DG8050W) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 6.0 V Collector Current - Continuous IC 800 mA Base Current - Continuous IB

1.67. 8050t.pdf Size:402K _blue-rocket-elect

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8050T(BR3DA8050T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 与 8550T(BR3CA8550T)互补。 Complementary pair with 8550T(BR3CA8550T). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 2 3 PIN1:Base PIN 2:Collector PIN 3:Emitter 印章代码 / Marking hFE Classifications B C D Symbol hFE Range 400~1000 100~300 200~600 Marking HY1B HY1C HY1D http://www.fsbrec.com 1 / 6 ** ** ** 8050T(BR3DA8050T) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 6.0 V Collector Current - Continuous IC 1.5 A Collector Base - Con

1.68. s8050m.pdf Size:862K _blue-rocket-elect

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S8050M(BR3DG8050M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 与 S8550M(BR3CG8550M)互补。 Complementary pair with S8550M(BR3CG8550M). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector 放大及印章代码 / hFE Classifications & Marking hFE Classifications B C D Symbol hFE Range 85~160 120~200 160~300 Marking HY3B HY3C HY3D http://www.fsbrec.com 1 / 6 S8050M(BR3DG8050M) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 6.0 V Collector Current IC 800 mA Base Current IB

1.69. 8050m.pdf Size:379K _blue-rocket-elect

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8050M(BR3DA8050M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 与 8550M(BR3CA8550M)互补。 Complementary pair with 8550M(BR3CA8550M). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector 放大及印章代码 / hFE Classifications & Marking hFE Classifications B C D Symbol hFE Range 85~160 120~200 160~300 Marking HY1B HY1C HY1D http://www.fsbrec.com 1 / 6 8050M(BR3DA8050M) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 6 V Collector Current - Continuous IC 1.5 A Collector Power

1.70. s8050a.pdf Size:420K _blue-rocket-elect

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8050
S8050A(BR3DG8050AK) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features PC, IC 大,与 S8550A(BR3CG8550AK)互补。 High PC and IC, complementary pair with S8550A(BR3CG8550AK). 用途 / Applications 用于乙类推挽功放。 Amplifier of portable radios in class B push-pull operation. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 2 3 PIN1:Base PIN 2:Collector PIN 3:Emitter 放大及印章代码 / hFE Classifications & Marking hFE Classifications B C D Symbol hFE Range 85~160 120~200 160~300 http://www.fsbrec.com 1 / 6 S8050A(BR3DG8050AK) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 6.0 V Collector Current -

1.71. l8050.pdf Size:597K _blue-rocket-elect

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L8050(BR3DA8050K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features PC, IC 大,与 L8550(BR3CA8550K)互补。 High PC and IC, complementary pair with L8550(BR3CA8550K). 用途 / Applications 用于 2W 乙类推挽功放。 2W output amplifier of portable radios in class B push-pull operation. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 2 3 PIN1:Collector PIN 2:Base PIN 3:Emitter 放大及印章代码 / hFE Classifications & Marking hFE Classifications B C D Symbol hFE Range 85~160 120~200 160~300 http://www.fsbrec.com 1 / 6 L8050(BR3DA8050K) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 20 V Emitter to Base Voltage VEBO 6.0 V Collector Curr

1.72. st8050-2a.pdf Size:385K _semtech

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ST 8050 (2A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 2 A Base Current IB 100 mA Power Dissipation Ptot 1 W O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 55 to + 150 C O Characteristics at Ta = 25 C Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 1 V, IC = 5 mA hFE 45 - - - at VCE = 1 V, IC = 100 mA Current Gain Group C hFE 120 - 200 - D hFE 160 - 300 - at VCE = 1 V, IC = 1.5 A hFE 40 - - - Collector Base Cutoff Current ICBO - - 100 nA at VCB = 35 V Em

1.73. st8050-1.5a.pdf Size:442K _semtech

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ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation Ptot 1 W Junction Temperature Tj 150 ℃ Storage Temperature Range TStg - 55 to + 150 ℃ Characteristics at Ta = 25℃ Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 1 V, IC = 5 mA hFE 45 - - - at VCE = 1 V, IC = 100 mA Current Gain Group C hFE 120 - 200 - D hFE 160 - 300 - at VCE = 1 V, IC = 800 mA hFE 40 - - - Collector Cutoff Current ICBO - - 100 nA at VCB = 35 V Emitter Cutoff Current IEBO - - 100

1.74. l8050qlt1g.pdf Size:70K _lrc

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LESHAN RADIO COMPANY, LTD. L8050PLT1G General Purpose Transistors Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. Epitaxial planar type. 3 NPN complement: L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOT–23 DEVICE MARKING AND ORDERING INFORMATION COLLECTOR Device Marking Shipping 3 L8050PLT1G S-L8050PLT1G 80P 3000/Tape&Reel 1 L8050PLT3G S-L8050PLT3G 80P 10000/Tape&Reel BASE 2 L8050QLT1G S-L8050QLT1G 1YC 3000/Tape&Reel EMITTER L8050QLT3G S-L8050QLT3G 1YC 10000/Tape&Reel L8050RLT1G S-L8050RLT1G 1YE 3000/Tape&Reel L8050RLT3G S-L8050RLT3G 1YE 10000/Tape&Reel 3000/Tape&Reel 80S L8050SLT1G S-L8050SLT1G 80S L8050SLT3G S-L8050SLT3G 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage V 25 V CEO Collector-Base Voltage VCBO 40

1.75. lx8050qlt1g.pdf Size:64K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LX8050PLT1G NPN Silicon Series S-LX8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.5A. Epitaxial planar type. 3 NPN complement: LX8050 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1 Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 DEVICE MARKING AND ORDERING INFORMATION SOT–23 Device Marking Shipping COLLECTOR (S-)LX8050PLT1G 3000/Tape&Reel X8A 3 (S-)LX8050PLT3G 10000/Tape&Reel X8A 1 (S-)LX8050QLT1G 3000/Tape&Reel X8C BASE (S-)LX8050QLT3G 2 X8C 10000/Tape&Reel EMITTER (S-)LX8050RLT1G X8E 3000/Tape&Reel (S-)LX8050RLT3G 10000/Tape&Reel X8E (S-)LX8050SLT1G X8G 3000/Tape&Reel (S-)LX8050SLT3G X8G 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage VCEO 25 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5V Collector Current-continuou

1.76. lh8050qlt1g.pdf Size:211K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE Series High current capacity in compact package. IC =1.5A. 3 Epitaxial planar type. NPN complement: LH8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOT–23 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping COLLECTOR 3 (S-)LH8050PLT1G KEO 3000/Tape&Reel KEO (S-)LH8050PLT3G 10000/Tape&Reel 1 BASE 3000/Tape&Reel (S-)LH8050QLT1G KEY 2 EMITTER 10000/Tape&Reel (S-)LH8050QLT3G KEY MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage V 50 V CEO Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 6V Collector Current-continuoun IC 1500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Dissipation Power P D 225 mW Junction and Storage Temperature T j , TSt

1.77. l8050hqlt1g.pdf Size:88K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement: L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 SOT–23 DEVICE MARKING AND ORDERING INFORMATION COLLECTOR Device Marking Shipping 3 S-L8050HPLT1G L8050HPLT1G 1HA 3000/Tape&Reel 1 1HA L8050HPLT3G S-L8050HPLT3G 10000/Tape&Reel BASE L8050HQLT1G S-L8050HQLT1G 1HC 3000/Tape&Reel 2 EMITTER S-L8050HQLT3G 1HC L8050HQLT3G 10000/Tape&Reel L8050HRLT1G S-L8050HRLT1G 1HE 3000/Tape&Reel 1HE L8050HRLT3G S-L8050HRLT3G 10000/Tape&Reel S-L8050HSLT1G L8050HSLT1G 1HG 3000/Tape&Reel S-L8050HSLT3G L8050HSLT3G 1HG 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage V 25 V CEO Coll

1.78. l8050hplt1g.pdf Size:101K _lrc

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LESHAN RADIO COMPANY, LTD. L8050HQLTIG General Purpose Transistors Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement: L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOT–23 DEVICE MARKING AND ORDERING INFORMATION COLLECTOR Device Marking Shipping 3 S-L8050HPLT1G L8050HPLT1G 1HA 3000/Tape&Reel 1 L8050HPLT3G S-L8050HPLT3G 1HA 10000/Tape&Reel BASE L8050HQLT1G S-L8050HQLT1G 1HC 3000/Tape&Reel 2 EMITTER 1HC L8050HQLT3G 10000/Tape&Reel S-L8050HQLT3G S-L8050HRLT1G L8050HRLT1G 1HE 3000/Tape&Reel S-L8050HRLT3G 1HE L8050HRLT3G 10000/Tape&Reel 1HG L8050HSLT1G S-L8050HSLT1G 3000/Tape&Reel S-L8050HSLT3G L8050HSLT3G 1HG 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage V 25 V CEO Collec

1.79. l8050plt1g.pdf Size:77K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050PLT1G Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. 3 Epitaxial planar type. NPN complement: L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOT–23 DEVICE MARKING AND ORDERING INFORMATION COLLECTOR Device Marking Shipping 3 L8050PLT1G S-L8050PLT1G 80P 3000/Tape&Reel 1 L8050PLT3G S-L8050PLT3G 80P 10000/Tape&Reel BASE 2 L8050QLT1G S- L8050QLT1G 1YC 3000/Tape&Reel EMITTER L8050QLT3G S-L8050QLT3G 1YC 10000/Tape&Reel L8050RLT1G S-L8050RLT1G 1YE 3000/Tape&Reel L8050RLT3G S-L8050RLT3G 1YE 10000/Tape&Reel 3000/Tape&Reel 80S L8050SLT1G S-L8050SLT1G 80S L8050SLT3G S-L8050SLT3G 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage V 25 V CEO Collector-Base Voltage VCBO 4

1.80. l8050hrlt1g.pdf Size:84K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE High current capacity in compact package. Series IC =1.5 A. Epitaxial planar type. 3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 SOT–23 DEVICE MARKING AND ORDERING INFORMATION COLLECTOR Device Marking Shipping 3 S-L8050HPLT1G L8050HPLT1G S-L8050HPLT1G 1HA 3000/Tape&Reel 1 1HA L8050HPLT3G S-L8050HPLT3G 10000/Tape&Reel BASE L8050HQLT1G S-L8050HQLT1G 1HC 3000/Tape&Reel 2 EMITTER 1HC L8050HQLT3G 10000/Tape&Reel S-L8050HQLT3G L8050HRLT1G S-L8050HRLT1G 1HE 3000/Tape&Reel S-L8050HRLT3G 1HE L8050HRLT3G 10000/Tape&Reel S-L8050HSLT1G L8050HSLT1G 1HG 3000/Tape&Reel L8050HSLT3G S-L8050HSLT3G 1HG 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage V 25

1.81. s8050.pdf Size:180K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 1 2 3 V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) 40 V CBO Ic= 100µA, I =0 E Collector-emitter breakdown voltage V(BR) Ic= 0.1mA, I =0 25 V CEO B Emitter-base breakdown voltage V(BR) 5 V EBO I = 100µA, I =0 E C Collector cut-off current I V = 40V, I =0 0.1 CBO CB E µA Collector cut-off current I V = 20V, I =0 0.1 CEO CE B µA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA h V = 1V, I = 50mA 85 300 FE(1) CE C DC current gain h V = 1V, I = 500mA 50 FE

1.82. ss8050.pdf Size:752K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25℃) 3. COLLECTOR : 2 W (TC=25℃) 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V Collector Current -Continuous IC 1500 mA Junction and Storage Temperature TJ, Tstg -55-150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO

1.83. s8050lt1.pdf Size:262K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8050LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25℃) 1. 3 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Unit: mm Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 40 V (BR)CBO Ic= 100µA, I =0 E Collector-emitter breakdown voltage V Ic=1mA, I =0 25 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100µA, I =0 E C Collector cut-off current ICBO VCB=40V, IE=0 0.1 µA Collector cut-off current I V =20V, I =0 0.1 CEO CB E µA Emitter cut-off current I V = 5V, I =0 0.1 EBO EB C µA H V =1V, I = 50mA 120 350 FE(1) CE C DC current gain H V =1V, I = 50

1.84. ss8050lt1.pdf Size:961K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.3 W ( Tamb=25℃) 1. 3 Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 25 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 25 V (BR)CBO Ic= 100µA, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 20 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100µA, I =0 E C Collector cut-off current ICBO VCB=25V, IE=0 0.1 µA Collector cut-off current I V=0 0.1 CEO CE=20V, IE µA Emitter cut-off current I V = 5V, I =0 0.1 EBO EB C µA h V =1V, I = 100mA 120 350 FE(1) CE C DC current gain h V =1V, I =

See also transistors datasheet: 71T2 , 72T2 , 73T2 , 74T2 , 7NU73 , 7NU74 , 8003BBA , 8003BBB , D882 , 80DA020D , 810BLYA , 8550 , 9003 , 9010 , 9011 , 9011D , 9011E .

Keywords

 8050 Datasheet  8050 Datenblatt  8050 RoHS  8050 Distributor
 8050 Application Notes  8050 Component  8050 Circuit  8050 Schematic
 8050 Equivalent  8050 Cross Reference  8050 Data Sheet  8050 Fiche Technique

 

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