8050 Datasheet & Equivalent - 8050 Transistor DataSheet PDF. Parameters and Characteristics. Electronic Component Catalog

TPCA8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPCA8050-H Switching Regulator Applications Unit: mm Motor Drive Applications 1.27 0.4 � 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 � 0.05 � Small footprint due to a small and thin package � High-speed switching 4 0.595 � Small gate charge: QSW = 10 nC (typ.) 1 A � Low drain-source ON-resistance: RDS (ON) = 9.0 m? (typ.) � High forward transfer admittance: |Yfs| = 70 S (typ.) 5.0 � 0.2 � Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) � Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25�C) Characteristic Symbol Rating Unit 4.25 � 0.2 Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V 8 5 Gate-source voltage VGSS �20 V DC (Note 1) ID 24 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) IDP 72 JEDEC ? Drain power dissipation (Tc = 25?

1.2. tpc8050-h_en_datasheet_090630.pdf Size:207K _toshiba2

TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications � Small footprint due to a small and thin package � High-speed switching � Small gate charge: QSW = 9.2 nC (typ.) � Low drain-source ON-resistance: RDS (ON) = 9.3 m? (typ.) � High forward transfer admittance: |Yfs| = 40 S (typ.) � Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) � Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) Absolute Maximum Ratings (Ta = 25�C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V Gate-source voltage VGSS �20 V JEDEC ? DC (Note 1) ID 11 Drain current A JEITA ? Pulsed (Note 1) IDP 44 Drain power dissipation (t = 10 s) TOSHIBA 2-6J1B PD 1.9 W (Note 2a) Weight: 0.085g (typ.) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Single-pulse avalan

1.3. ss8050.pdf Size:157K _fairchild_semi

SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. � Complimentary to SS8550 � Collector Current: IC=1.5A � Collector Power Dissipation: PC=2W (TC=25�C) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25�C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 �C TSTG Storage Temperature -65 ~ 150 �C Electrical Characteristics Ta=25�C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100�A, IE=0 40 V BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 V BVEBO Emitter-Base Breakdown Voltage IE=100�A, IC=0 6 V ICBO Collector Cut-off Current VCB=35V, IE=0 100 nA IEBO Emitter Cut-off Current VEB=6V, IC=0 100 nA hFE1 DC Curren

1.4. ss8050.pdf Size:62K _samsung

SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. � Complimentary to SS8550 � Collector Current IC=1.5A � Collector Dissipation:PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1.5 A Collector Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0 25 V Emitter-Base Breakdown Voltage BVEBO IE=100 , IC=0 V 6 Collector Cut-off Current ICBO VCB=35V, IE=0 100 nA Emitter Cut-off Current IEBO VEB=6V, IC=0 100 nA DC Current Gain hFE1 VCE=1V, IC=5mA 45 135 hFE2 VCE=1V, IC=100mA 85 1

1.5. he8050.pdf Size:19K _utc

UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *complimentary to UTC HE8550 TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25�C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Dissipation(Ta=25�C) Pc 1 W Collector Current Ic 1.5 A Junction Temperature Tj 150 �C Storage Temperature TSTG -65 ~ +150 �C ELECTRICAL CHARACTERISTICS(Ta=25�C,unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=100�A,IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO Ic

1.6. he8050l.pdf Size:19K _utc

UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to UTC HE8550 TO-92L 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25�C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Dissipation(Ta=25�C) Pc 1 W Collector Current Ic 1.5 A Junction Temperature Tj 150 �C Storage Temperature TSTG -65 ~ +150 �C ELECTRICAL CHARACTERISTICS(Ta=25�C,unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=100�A,IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO I

1.7. s8050.pdf Size:19K _utc

UTC S8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. 1 FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V *Complementary to S8550 TO-92 1:EMITTER 2:BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25�C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Dissipation(Ta=25�C) Pc 1 W Collector Current Ic 800 mA Junction Temperature Tj 150 �C Storage Temperature TSTG -65 ~ +150 �C ELECTRICAL CHARACTERISTICS(Ta=25�C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=100�A,IE=0 30 V Collector-Emitter Breakdown Voltage BVCEO Ic=1mA,IB=0 20 V Emitter-Ba

1.8. utc8050s.pdf Size:23K _utc

UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V TO-92 *Complementary to UTC 8550S 1:EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25�C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Dissipation(Ta=25 ) Pc 1 W Collector Current Ic 800 mA Junction Temperature Tj 150 �C Storage Temperature TSTG -65 ~ +150 �C ELECTRICAL CHARACTERISTICS(Ta=25�C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=100�A,IE=0 30 V Collector-Emitter Breakdown Voltage BVCEO Ic=1mA,IB=0 20 V Emitter-Ba

1.9. s8050t.pdf Size:386K _secos

S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current: IC = 0.5 A 1 2 3 2.54 0.1 1: Emitter 2: Base 3: Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 5 V mA Collector Currrent IC 500 Total Power Dissipation PD 625 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base Breakdown Voltage V(BR)CBO 40 - - V IC = 100 ?A, IE = 0 Collector-emitter Breakdown Voltage V(BR)CEO 25 - - V IC = 0.1 mA, IB = 0 Emitter-base Breakdown Voltage V(BR)EBO 5 - - V IE = 100 ?A

1.10. m8050.pdf Size:365K _secos

M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A ? Power dissipation L 3 3 Top View C B MARKING 1 1 2 Product Marking Code 2 K E M8050 Y11 D H J F G PACKAGE INFORMATION Millimeter Millimeter Package MPQ Leader Size REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18 SOT-23 3K 7 inch B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 CLASSIFICATION OF hFE(2) Collector Product-Rank M8050-L ?? Range 80-300 ?? Base ?? Emitter MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 6 V Collector Current - Continuous IC 0.8 A Collector Power Dissipation PC 0.2 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELE

1.11. ss8050w.pdf Size:258K _secos

SS8050W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM : 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM : 1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO : 40 V S Top View B K 0.350 0.500 Operating & storage junction temperature 1 2 L 0.590 0.720 O O Tj, Tstg : - 55 C ~ + 150 C S 2.000 2.400 V G V 0.280 0.420 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 25 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100?A, I =0 E C Collector cut-off current I V =40 V , I =0 0.1 CBO CB E ?A Collector cut-off cu

1.12. ss8050.pdf Size:310K _secos

SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L ? Complimentary to SS8550 3 3 Top View ? Power Dissipation C B 1 1 2 PCM : 0.3W 2 K E ? Collector Current ICM : 1.5A D Collector H J ? Collector - Base Voltage F G ?? V(BR)CBO : 40V ? Operating & Storage junction temperature Millimeter Millimeter REF. REF. Min. Max. Min. Max. TJ, TSTG : -55? ~ +150? ?? A 2.70 3.04 G - 0.18 Base B 2.10 2.80 H 0.40 0.60 MARKING : Y1 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 ?? Emitter MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 1.5 A Collector Power Dissapation PC 0.3 W Junction, Storage Temperature TJ, TSTG 15

1.13. ss8050t.pdf Size:105K _secos

SS8050T NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM : 1 W Collector Current ICM : 1.5 A 1 Collector-base voltage 2 3 V(BR)CBO : 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg : - 55 C ~ + 150 C 1. EMITTER 2 2. BASS 3 . COLLECTOR 3 O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 25 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100?A, I =0 E C Collector cut-off current I V =40 V , I =0 0.1 CBO CB E ?A Collector cut-off current I V =20V , I =0 0.1 CEO CE B ?A Emitter cut-off current I V =5V, I =0 0.1 EBO EB C ?A H V =1V, I = 100mA 85 400 FE(1) CE C DC current gain H V =1V, I = 800mA 40 FE(2) CE

1.14. s8050.pdf Size:192K _secos

S8050 NPN Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8550 B 1.200 1.400 1 Base C 0.890 1.110 2 Collector Current: IC=0.5A Emitter D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.600 S Top View B 12 L 0.890 1.020 S 2.100 2.500 MARKING: J3Y V G V 0.450 0.600 All Dimension in mm C H J D K O MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown volt

1.15. 8050sst.pdf Size:331K _secos

8050SST 1.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? General Purpose Switching and Amplification. G H ?Emitter ?Collector ?Base J CLASSIFICATION OF hFE (1) A D Millimeter Product-Rank 8050SST-B 8050SST-C 8050SST-D REF. B Min. Max. A 4.40 4.70 Range 85~160 120~200 160~300 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ?? ?? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 1.5 A Collector Power Dissipation PC 1 W Thermal Resistance From Junction to Ambient R?JA 125 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECT

1.16. mps8050s.pdf Size:391K _kec

SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 ~ 0.10 L 0.55 VCBO Collector-Base Voltage 40 V P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO Collector-Emitter Voltage 25 V P 7 VEBO Emitter-Base Voltage 6 V M IC Collector Current 1.5 A 1. EMITTER PC * Collector Power Dissipation 350 mW 2. BASE Tj Junction Temperature 150 3. COLLECTOR Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) SOT-23 Marking hFE Rank Lot No. Type Name BH ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 100 nA IEBO VEB=6V, IC=0 Emitter Cut-off Curren

1.17. ktc8050a.pdf Size:48K _kec

SEMICONDUCTOR KTC8050A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to KTC8550A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25?) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage 5 V L 2.30 M 0.45 MAX IC Collector Current 800 mA N 1.00 1 2 3 IE Emitter Current -800 mA 1. EMITTER 2. BASE PC Collector Power Dissipation 400 mW 3. COLLECTOR Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=15V, IE=0 Collector Cut-off Current - - 50 nA V(BR)CBO IC=0.5mA, IE=0 Collector-Base Breakdown Voltage 35 - - V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 30 - - V h

1.18. ktc8050.pdf Size:38K _kec

SEMICONDUCTOR KTC8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage 5 V L 2.30 M 0.45 MAX IC Collector Current 800 mA N 1.00 1 2 3 IE Emitter Current -800 mA 1. EMITTER 2. BASE PC Collector Power Dissipation 625 mW 3. COLLECTOR Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=15V, IE=0 Collector Cut-off Current - - 50 nA V(BR)CBO IC=0.5mA, IE=0 Collector-Base Breakdown Voltage 35 - - V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 30 - - V hFE(1) (Note)

1.19. ktc8050s.pdf Size:393K _kec

SEMICONDUCTOR KTC8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 ~ 0.10 VCBO Collector-Base Voltage 35 V L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO Collector-Emitter Voltage 30 V P 7 VEBO Emitter-Base Voltage 5 V M IC Collector Current 800 mA 1. EMITTER IE Emitter Current -800 mA 2. BASE PC * Collector Power Dissipation 350 mW 3. COLLECTOR Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range SOT-23 * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BK ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=15V, IE=0 Collector Cut-off Current - - 50 nA V(BR)CBO IC

1.20. mps8050.pdf Size:45K _kec

SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to MPS8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25?) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 40 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 25 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage 6 V L 2.30 M 0.45 MAX IC Collector Current 1.5 A N 1.00 1 2 3 625 1. EMITTER PC* Collector Power Dissipation mW 2. BASE 400 3. COLLECTOR Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range TO-92 *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 100 nA IEBO VEB=6V, IC=0 Emitter Cut-off Current - - 100 nA V(BR)CBO A, IE=0 Collector-Base Breakdown Voltage IC=100? 40 - -

1.21. m8050.pdf Size:479K _htsemi

M8050 TRANSISTOR(NPN) SOT-23 FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20V, IB=0 0.1 ?A VCE=1V, IC=5mA 45 h FE(1) DC current gain VCE=1V, IC=100mA 80 300 h FE(2) h VCE=1V, IC=800mA 40 ( ) FE 3 Collec

1.22. pxt8050.pdf Size:471K _htsemi

PXT8 050 TRANSISTOR(NPN) SOT-89 FEATURES Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Emitter cut-off current ICEO VCE=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC=100mA 85 400 DC current gain hFE(2) VCE=1V, IC=800mA 40 Col

1.23. ss8050.pdf Size:888K _htsemi

SS8 050 SOT-23 TRANSISTOR(NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) ? Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC= 100mA 120 400 DC current gain hFE(2) VCE=1V, I

1.24. s8050.pdf Size:526K _htsemi

S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40 V , IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V , IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 ?A HFE(1) VCE=1V, IC= 50mA 120 350 DC cu

1.25. m8050.pdf Size:292K _gsme

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.26. s8050a.pdf Size:292K _gsme

1.27. mmt8050.pdf Size:292K _gsme

1.28. ss8050.pdf Size:292K _gsme

1.29. s8050.pdf Size:292K _gsme

1.30. 8050s_to-92.pdf Size:181K _lge

8050S(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.32 2.92 5.33 MIN Features Complimentary to 8550S 3.43 Collector current: IC=0.5A MIN 2.41 2.67 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter 3.18 Value Units 2.03 4.19 2.67 VCBO Collector-Base Voltage 40 V 1.14 1.40 VCEO Collector-Emitter Voltage 25 V 2.03 2.67 VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE

1.31. m8050_to-92.pdf Size:200K _lge

M8050(NPN) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 625 mW Dimensions in inches and (millimeters) TJ Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC= 1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20V, IB=0 0.1 ?A hFE(1) VCE=1V, IC=5mA 45 DC current gain hFE(2) VCE=1V, IC=100mA 80 400 hFE(3) VCE=1V, I

1.32. ss8050_sot-23.pdf Size:323K _lge

SS8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC= 100mA 1

1.33. s8050_sot-23.pdf Size:208K _lge

S8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=40 V , IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V , IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V , IC=0 0.1

1.34. pxt8050.pdf Size:218K _lge

PXT8050 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 3. EMITTER SOT-89 4.6 B 4.4 1.6 1.8 Features 1.4 1.4 Compliment to PXT8550 2.6 4.25 2.4 3.75 0.8 MARKING: Y1 MIN 0.53 0.40 0.48 0.44 2x) 0.13 B MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.35 0.37 1.5 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Emitter cut-

1.35. m8050_sot-23.pdf Size:234K _lge

M8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y11 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20V, IB=0 0.1 ?A VCE=1V, IC=5mA 45 h FE(1) DC current gain VCE=1V, IC=100mA 80 300 h F

1.36. s8050_to-92.pdf Size:566K _lge

S8050(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complimentary to S8550 Collector current: IC=0.5A MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V,

1.37. ss8050_to-92.pdf Size:168K _lge

SS8050(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM : 1 W (TA=25?) : 2 W (TC=25?) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Emitter cut-off current ICEO VCE=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC=100mA 85 400 DC cur

1.38. m8050lt1.pdf Size:325K _wietron

M8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 800 300 2.4 417 0.1 25 100 40 5.0 100 0.15 u 35 u 4.0 0.15 WEITRON 1/4 15-Jul-10 http://www.weitron.com.tw M8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max UnitM Min ON CHARACTERISTICS DC Current Gain - (IC=100 mAdc, VCE=1.0 Vdc) hFE (1) 600 100 Collector-Emitter Saturation Voltage VCE(sat) - 0.5 Vdc (IC=800 mAdc, IB=80mAdc) CLASSIFICATION OF h FE(1) P Rank Q R S Range 100-200 200-400 300-600 150-300 1YC 80S 80P Marking 1YE WEITRON 2/4 15-Jul-10 http://www.weitron.com.tw M8050LT1 1000 1 CE V =1V 100 0.1 10 VCE(sat) @ IC=10IB 1 0.01 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 Collector Current (mA) Collector Current (mA) FIG.1 - Current Gain & Collector Current FIG.2 - Saturation Voltage & Collector Current 1000 1 VCE=10V VBE(ON) @ VCE=1V 100 10 0.1

1.39. ss8050lt1.pdf Size:165K _wietron

SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 1500 300 2.4 417 0.1 25 40 100 5.0 100 u 0.15 35 0.15 u 4.0 WEITRON 27-Jul-2012 1/2 http://www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - (IC=100 mAdc, VCE=1.0 Vdc) hFE 600 100 Collector-Emitter Saturation Voltage VCE(sat) - Vdc 0.5 (IC=800 mAdc, IB=80mAdc) CLASSIFICATION OF h FE P Rank Q R S Range 100-200 150-300 200-400 300-600 Marking 1HA 1HC 1HE 1HG SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 D G G 1.70 2.10 E H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L 0.30 0.61 L M J M 0.076 0.25 WEITRON 27-Jul-2012 2/2 http://www.weitron.com.tw

1.40. ss8050.pdf Size:223K _wietron

SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25?C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation TA=25°C PD W 1.0 TJ,Tstg Junction and Storage, Temperature -55 to +150 °C ELECTRICAL CHARACTERISTICS (TA=25?C unless otherwise noted) Characteristics Symbol Max Unit Min Typ Collector-Base Breakdown Voltage V(BR)CBO 40 - V - IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 25 - - V IC=0.1mA, IB=0 Emitter Base Breakdown Voltage V(BR)EBO 5 - - V IE=100µA, IC=0 Collector cut-off current µA ICBO - - 0.1 VCB=40V, IE=0 Emitter cut-off current µA - - 0.1 ICEO VCE=20V, IE=0 Emitter cut-off current µA IEBO - - 0.1 VEB=5V, IC=0 WEITRON 1/4 19-Jul-05 http://www.weitron.com.tw SS8050 ON

1.41. s8050.pdf Size:2028K _wietron

S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temperature Tstg C -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) V(BR)CEO 25 Vdc Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) V(BR)CBO 40 - Vdc - Vdc V(BR)EBO 5.0 Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0) uAdc ICE0 Collector Cutoff Current (V = 20 Vdc, I =0) - 0.1 CE B ICBO - 0.1 uAdc Collector Cutoff Current (V = 40 Vdc, IE=0) CB - IEBO d Emitter Cutoff Current (VEB= 3.0V c, I =0) 0.1 uAdc C WEITRON http://www.weitron.com.tw S8050 ELECTRICAL CHARACTERISTICS (TA=2

See also transistors datasheet: 71T2 , 72T2 , 73T2 , 74T2 , 7NU73 , 7NU74 , 8003BBA , 8003BBB , C102 , 80DA020D , 810BLY-A , 8550 , 9003 , 9010 , 9011 , 9011D , 9011E .

Keywords

8050 Datasheet	8050 Datenblatt	8050 RoHS	8050 Distributor
8050 Application Notes	8050 Component	8050 Circuit	8050 Schematic
8050 Equivalent	8050 Cross Reference	8050 Data Sheet	8050 Fiche Technique


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