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8050
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List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
8050 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

8050 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 8050

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 9

Forward current transfer ratio (hFE), min: 85

Noise Figure, dB: -

Package of 8050 transistor: TO92

8050 Equivalent Transistors - Cross-Reference Search

8050 PDF doc:

1.1. tpc8050-h_en_datasheet_090630.pdf Size:207K _toshiba2

8050
8050
TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.3 m? (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V Gate-source voltage VGSS 20 V JEDEC ? DC (Note 1) ID 11 Drain current A JEITA ? Pulsed (Note 1) IDP 44 Drain power dissipation (t = 10 s) TOSHIBA 2-6J1B PD 1.9 W (Note 2a) Weight: 0.085g (typ.) Drain power dissipation (t = 10 s) PD 1.0 W (Note 2b) Single-pulse avalan

1.2. tpca8050-h.pdf Size:185K _toshiba2

8050
8050
TPCA8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPCA8050-H Switching Regulator Applications Unit: mm Motor Drive Applications 1.27 0.4 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595 Small gate charge: QSW = 10 nC (typ.) 1 A Low drain-source ON-resistance: RDS (ON) = 9.0 m? (typ.) High forward transfer admittance: |Yfs| = 70 S (typ.) 5.0 0.2 Low leakage current: IDSS = 10 ?A (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 4.25 0.2 Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 k?) VDGR 60 V 8 5 Gate-source voltage VGSS 20 V DC (Note 1) ID 24 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) IDP 72 JEDEC ? Drain power dissipation (Tc = 25?

1.3. ss8050.pdf Size:157K _fairchild_semi

8050
8050
SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=100A, IE=0 40 V BVCEO Collector-Emitter Breakdown Voltage IC=2mA, IB=0 25 V BVEBO Emitter-Base Breakdown Voltage IE=100A, IC=0 6 V ICBO Collector Cut-off Current VCB=35V, IE=0 100 nA IEBO Emitter Cut-off Current VEB=6V, IC=0 100 nA hFE1 DC Curren

1.4. ss8050.pdf Size:62K _samsung

8050
8050
SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. Complimentary to SS8550 Collector Current IC=1.5A Collector Dissipation:PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1.5 A Collector Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0 25 V Emitter-Base Breakdown Voltage BVEBO IE=100 , IC=0 V 6 Collector Cut-off Current ICBO VCB=35V, IE=0 100 nA Emitter Cut-off Current IEBO VEB=6V, IC=0 100 nA DC Current Gain hFE1 VCE=1V, IC=5mA 45 135 hFE2 VCE=1V, IC=100mA 85 1

1.5. he8050l.pdf Size:19K _utc

8050
8050
UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to UTC HE8550 TO-92L 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Dissipation(Ta=25C) Pc 1 W Collector Current Ic 1.5 A Junction Temperature Tj 150 C Storage Temperature TSTG -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=100A,IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO I

1.6. utc8050s.pdf Size:23K _utc

8050
8050
UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V TO-92 *Complementary to UTC 8550S 1:EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Dissipation(Ta=25 ) Pc 1 W Collector Current Ic 800 mA Junction Temperature Tj 150 C Storage Temperature TSTG -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=100A,IE=0 30 V Collector-Emitter Breakdown Voltage BVCEO Ic=1mA,IB=0 20 V Emitter-Ba

1.7. s8050.pdf Size:19K _utc

8050
8050
UTC S8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. 1 FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V *Complementary to S8550 TO-92 1:EMITTER 2:BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Dissipation(Ta=25C) Pc 1 W Collector Current Ic 800 mA Junction Temperature Tj 150 C Storage Temperature TSTG -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=100A,IE=0 30 V Collector-Emitter Breakdown Voltage BVCEO Ic=1mA,IB=0 20 V Emitter-Ba

1.8. he8050.pdf Size:19K _utc

8050
8050
UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *complimentary to UTC HE8550 TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Dissipation(Ta=25C) Pc 1 W Collector Current Ic 1.5 A Junction Temperature Tj 150 C Storage Temperature TSTG -65 ~ +150 C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO Ic=100A,IE=0 40 V Collector-Emitter Breakdown Voltage BVCEO Ic

1.9. sps8050.pdf Size:199K _auk

8050
8050
SPS8050 Semiconductor Semiconductor NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6?(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code SPS8050 SPS8050 TO-92 Outline Dimensions unit : mm 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9104-002 1 SPS8050 Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 12 V Emitter-base voltage VEBO 6.5 V Collector current IC 1.5 A Collector dissipation PC 625 mW Junction temperature TJ 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO IC=50µA, IE=0 15 - - V Collecto

1.10. sts8050.pdf Size:237K _auk

8050
8050
STS8050 NPN Silicon Transistor Descriptions PIN Connection • High current application C • Radio in class B push-pull operation B Feature E • Complementary pair with STS8550 TO-92 Ordering Information Type NO. Marking Package Code STS8050 STS8050 TO-92 Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 6 V Collector current IC 800 mA Emitter current IE -800 mA Collector power dissipation PC 625 mW Junction temperature TJ 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO IC=500?A, IE=0 30 - - V Collector-emitter breakdown voltage BVCEO IC=1mA, IB=0 25 - - V Collector cut-off current ICBO VCB=15V, IE=0 - - 50 nA DC current gain hFE* VCE=1V, IC=50mA 85 - 300 - Collector-emitter saturation

1.11. ss8050w.pdf Size:258K _secos

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8050
SS8050W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM : 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM : 1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO : 40 V S Top View B K 0.350 0.500 Operating & storage junction temperature 1 2 L 0.590 0.720 O O Tj, Tstg : - 55 C ~ + 150 C S 2.000 2.400 V G V 0.280 0.420 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 25 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100?A, I =0 E C Collector cut-off current I V =40 V , I =0 0.1 CBO CB E ?A Collector cut-off cu

1.12. ss8050.pdf Size:310K _secos

8050
8050
SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L ? Complimentary to SS8550 3 3 Top View ? Power Dissipation C B 1 1 2 PCM : 0.3W 2 K E ? Collector Current ICM : 1.5A D Collector H J ? Collector - Base Voltage F G ?? V(BR)CBO : 40V ? Operating & Storage junction temperature Millimeter Millimeter REF. REF. Min. Max. Min. Max. TJ, TSTG : -55? ~ +150? ?? A 2.70 3.04 G - 0.18 Base B 2.10 2.80 H 0.40 0.60 MARKING : Y1 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 ?? Emitter MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 1.5 A Collector Power Dissapation PC 0.3 W Junction, Storage Temperature TJ, TSTG 15

1.13. s8050t.pdf Size:386K _secos

8050
8050
S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current: IC = 0.5 A 1 2 3 2.54 0.1 1: Emitter 2: Base 3: Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 5 V mA Collector Currrent IC 500 Total Power Dissipation PD 625 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base Breakdown Voltage V(BR)CBO 40 - - V IC = 100 ?A, IE = 0 Collector-emitter Breakdown Voltage V(BR)CEO 25 - - V IC = 0.1 mA, IB = 0 Emitter-base Breakdown Voltage V(BR)EBO 5 - - V IE = 100 ?A

1.14. m8050.pdf Size:365K _secos

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8050
M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A ? Power dissipation L 3 3 Top View C B MARKING 1 1 2 Product Marking Code 2 K E M8050 Y11 D H J F G PACKAGE INFORMATION Millimeter Millimeter Package MPQ Leader Size REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18 SOT-23 3K 7 inch B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 CLASSIFICATION OF hFE(2) Collector Product-Rank M8050-L ?? Range 80-300 ?? Base ?? Emitter MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 6 V Collector Current - Continuous IC 0.8 A Collector Power Dissipation PC 0.2 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELE

1.15. 8050sst.pdf Size:331K _secos

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8050
8050SST 1.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? General Purpose Switching and Amplification. G H ?Emitter ?Collector ?Base J CLASSIFICATION OF hFE (1) A D Millimeter Product-Rank 8050SST-B 8050SST-C 8050SST-D REF. B Min. Max. A 4.40 4.70 Range 85~160 120~200 160~300 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ?? ?? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 1.5 A Collector Power Dissipation PC 1 W Thermal Resistance From Junction to Ambient R?JA 125 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECT

1.16. ss8050t.pdf Size:105K _secos

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8050
SS8050T NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM : 1 W Collector Current ICM : 1.5 A 1 Collector-base voltage 2 3 V(BR)CBO : 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg : - 55 C ~ + 150 C 1. EMITTER 2 2. BASS 3 . COLLECTOR 3 O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V 40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 25 V (BR)CEO B Emitter-base breakdown voltage V 5 V (BR)EBO I =100?A, I =0 E C Collector cut-off current I V =40 V , I =0 0.1 CBO CB E ?A Collector cut-off current I V =20V , I =0 0.1 CEO CE B ?A Emitter cut-off current I V =5V, I =0 0.1 EBO EB C ?A H V =1V, I = 100mA 85 400 FE(1) CE C DC current gain H V =1V, I = 800mA 40 FE(2) CE

1.17. s8050.pdf Size:192K _secos

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8050
S8050 NPN Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8550 B 1.200 1.400 1 Base C 0.890 1.110 2 Collector Current: IC=0.5A Emitter D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.600 S Top View B 12 L 0.890 1.020 S 2.100 2.500 MARKING: J3Y V G V 0.450 0.600 All Dimension in mm C H J D K O MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown volt

1.18. cmbt8050.pdf Size:132K _cdil

8050
8050
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION (NPN) 1 = BASE SOT-23 2 = EMITTER 3 = COLLECTOR 3 Formed SMD Package 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 25 V Emitter Base Voltage VEBO 6 V Collector Current Continuous IC 800 mA Collector Dissipation @ Ta=25?C PC 250 mW Operating And Storage Junction Tj, Tstg - 55 to +125 ?C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Base Voltage VCBO IC=100µA, IE=0 30 V Collector Emitter Voltage VCEO IC=10mA, IB=0 25 V VEBO Emitter Base Voltage IE=10µA, IC=0 6 V Collector Cut Off Current ICBO VCB=15V, IE=0 50 nA Emitter Cut Off Current IEBO VEB=4V, IC=0 500 nA DC Current Gain hFE *IC=50mA, VCE=1V 100 400 IC=350mA, VCE=1V

1.19. cn8050_cn8550_c_d.pdf Size:227K _cdil

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8050
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS CN8050 NPN CN8550 PNP TO-92 Plastic Package C B E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 6.0 V IC Collector Current 800 mA ICM Peak Collector Current 1.0 A IB Base Current 100 mA Power Dissipation@ Ta=25?C *Ptot 625 mW Tj Junction Temperature 150 ?C Tstg Storage Temperature Range - 55 to +150 ?C THERMAL RESISTANCE *Rth (j-a) Junction to Ambient in free air 200 K/W * Valid provided that leads are kept at ambient temperature at a distance of 2mm from case. ELECTRICAL CHARACTERISTICS (Ta=25?C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS VCEO IC=2mA, IB=0 Collector Emitter Voltage 25 V VCBO Collector Base Voltage IC=10µA, IE=0 40 V VEBO Emitter Base Voltage IE=100µA, IC=0 6 V hF

1.20. ktc8050s.pdf Size:393K _kec

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SEMICONDUCTOR KTC8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 ~ 0.10 VCBO Collector-Base Voltage 35 V L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO Collector-Emitter Voltage 30 V P 7 VEBO Emitter-Base Voltage 5 V M IC Collector Current 800 mA 1. EMITTER IE Emitter Current -800 mA 2. BASE PC * Collector Power Dissipation 350 mW 3. COLLECTOR Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range SOT-23 * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) Marking hFE Rank Lot No. Type Name BK ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=15V, IE=0 Collector Cut-off Current - - 50 nA V(BR)CBO IC

1.21. mps8050.pdf Size:45K _kec

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SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to MPS8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25?) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 40 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 25 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage 6 V L 2.30 M 0.45 MAX IC Collector Current 1.5 A N 1.00 1 2 3 625 1. EMITTER PC* Collector Power Dissipation mW 2. BASE 400 3. COLLECTOR Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range TO-92 *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 100 nA IEBO VEB=6V, IC=0 Emitter Cut-off Current - - 100 nA V(BR)CBO A, IE=0 Collector-Base Breakdown Voltage IC=100? 40 - -

1.22. ktc8050.pdf Size:38K _kec

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SEMICONDUCTOR KTC8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage 5 V L 2.30 M 0.45 MAX IC Collector Current 800 mA N 1.00 1 2 3 IE Emitter Current -800 mA 1. EMITTER 2. BASE PC Collector Power Dissipation 625 mW 3. COLLECTOR Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=15V, IE=0 Collector Cut-off Current - - 50 nA V(BR)CBO IC=0.5mA, IE=0 Collector-Base Breakdown Voltage 35 - - V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 30 - - V hFE(1) (Note)

1.23. ktc8050a.pdf Size:48K _kec

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SEMICONDUCTOR KTC8050A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to KTC8550A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25?) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage 5 V L 2.30 M 0.45 MAX IC Collector Current 800 mA N 1.00 1 2 3 IE Emitter Current -800 mA 1. EMITTER 2. BASE PC Collector Power Dissipation 400 mW 3. COLLECTOR Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=15V, IE=0 Collector Cut-off Current - - 50 nA V(BR)CBO IC=0.5mA, IE=0 Collector-Base Breakdown Voltage 35 - - V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 30 - - V h

1.24. mps8050s.pdf Size:391K _kec

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SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 ~ 0.10 L 0.55 VCBO Collector-Base Voltage 40 V P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO Collector-Emitter Voltage 25 V P 7 VEBO Emitter-Base Voltage 6 V M IC Collector Current 1.5 A 1. EMITTER PC * Collector Power Dissipation 350 mW 2. BASE Tj Junction Temperature 150 3. COLLECTOR Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) SOT-23 Marking hFE Rank Lot No. Type Name BH ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=35V, IE=0 Collector Cut-off Current - - 100 nA IEBO VEB=6V, IC=0 Emitter Cut-off Curren

1.25. ss8050.pdf Size:888K _htsemi

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SS8 050 SOT-23 TRANSISTOR(NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) ? Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC= 100mA 120 400 DC current gain hFE(2) VCE=1V, I

1.26. m8050.pdf Size:479K _htsemi

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M8050 TRANSISTOR(NPN) SOT-23 FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20V, IB=0 0.1 ?A VCE=1V, IC=5mA 45 h FE(1) DC current gain VCE=1V, IC=100mA 80 300 h FE(2) h VCE=1V, IC=800mA 40 ( ) FE 3 Collec

1.27. pxt8050.pdf Size:471K _htsemi

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PXT8 050 TRANSISTOR(NPN) SOT-89 FEATURES Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Emitter cut-off current ICEO VCE=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC=100mA 85 400 DC current gain hFE(2) VCE=1V, IC=800mA 40 Col

1.28. s8050.pdf Size:526K _htsemi

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S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40 V , IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V , IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 ?A HFE(1) VCE=1V, IC= 50mA 120 350 DC cu

1.29. ss8050.pdf Size:292K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.30. m8050.pdf Size:292K _gsme

8050
8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.31. s8050.pdf Size:292K _gsme

8050
8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.32. s8050a.pdf Size:292K _gsme

8050
8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.33. mmt8050.pdf Size:292K _gsme

8050
8050
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage 40 VCBO Vdc ???-???? 25(GMC6802) Collect-Emitter Voltage 25 VCEO Vdc ???-????? 18(GMC6802) Emitter-Base Voltage VEBO 5.0 Vdc ???-???? 500(S8050A,S8050) 1000(M8050) Collector Current 1200(MMT8050) Ic mAdc ????? 1500(SS8050) 1800(GMC6802) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. S8050A=J3Y. S8050=J3Y M8050=Y1. MMT8050=Y1 SS8050=Y.1 GMC6802=

1.34. 8050s_to-92.pdf Size:181K _lge

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8050S(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.32 2.92 5.33 MIN Features Complimentary to 8550S 3.43 Collector current: IC=0.5A MIN 2.41 2.67 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter 3.18 Value Units 2.03 4.19 2.67 VCBO Collector-Base Voltage 40 V 1.14 1.40 VCEO Collector-Emitter Voltage 25 V 2.03 2.67 VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE

1.35. pxt8050.pdf Size:218K _lge

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PXT8050 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 3. EMITTER SOT-89 4.6 B 4.4 1.6 1.8 Features 1.4 1.4 Compliment to PXT8550 2.6 4.25 2.4 3.75 0.8 MARKING: Y1 MIN 0.53 0.40 0.48 0.44 2x) 0.13 B MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.35 0.37 1.5 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Emitter cut-

1.36. m8050_to-92.pdf Size:200K _lge

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M8050(NPN) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 625 mW Dimensions in inches and (millimeters) TJ Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC= 1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20V, IB=0 0.1 ?A hFE(1) VCE=1V, IC=5mA 45 DC current gain hFE(2) VCE=1V, IC=100mA 80 400 hFE(3) VCE=1V, I

1.37. s8050_sot-23.pdf Size:208K _lge

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S8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=40 V , IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V , IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V , IC=0 0.1

1.38. ss8050_to-92.pdf Size:168K _lge

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SS8050(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM : 1 W (TA=25?) : 2 W (TC=25?) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Emitter cut-off current ICEO VCE=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB=5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC=100mA 85 400 DC cur

1.39. s8050_to-92.pdf Size:566K _lge

8050
8050
S8050(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complimentary to S8550 Collector current: IC=0.5A MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V,

1.40. ss8050_sot-23.pdf Size:323K _lge

8050
8050
SS8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 ?A Collector cut-off current ICEO VCB=20V, IE=0 0.1 ?A Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 ?A hFE(1) VCE=1V, IC= 100mA 1

1.41. m8050_sot-23.pdf Size:234K _lge

8050
8050
M8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y11 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 ?A Collector cut-off current ICEO VCE= 20V, IB=0 0.1 ?A VCE=1V, IC=5mA 45 h FE(1) DC current gain VCE=1V, IC=100mA 80 300 h F

1.42. ss8050.pdf Size:223K _wietron

8050
8050
SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25?C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation TA=25°C PD W 1.0 TJ,Tstg Junction and Storage, Temperature -55 to +150 °C ELECTRICAL CHARACTERISTICS (TA=25?C unless otherwise noted) Characteristics Symbol Max Unit Min Typ Collector-Base Breakdown Voltage V(BR)CBO 40 - V - IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 25 - - V IC=0.1mA, IB=0 Emitter Base Breakdown Voltage V(BR)EBO 5 - - V IE=100µA, IC=0 Collector cut-off current µA ICBO - - 0.1 VCB=40V, IE=0 Emitter cut-off current µA - - 0.1 ICEO VCE=20V, IE=0 Emitter cut-off current µA IEBO - - 0.1 VEB=5V, IC=0 WEITRON 1/4 19-Jul-05 http://www.weitron.com.tw SS8050 ON

1.43. m8050lt1.pdf Size:325K _wietron

8050
8050
M8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 800 300 2.4 417 0.1 25 100 40 5.0 100 0.15 u 35 u 4.0 0.15 WEITRON 1/4 15-Jul-10 http://www.weitron.com.tw M8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max UnitM Min ON CHARACTERISTICS DC Current Gain - (IC=100 mAdc, VCE=1.0 Vdc) hFE (1) 600 100 Collector-Emitter Saturation Voltage VCE(sat) - 0.5 Vdc (IC=800 mAdc, IB=80mAdc) CLASSIFICATION OF h FE(1) P Rank Q R S Range 100-200 200-400 300-600 150-300 1YC 80S 80P Marking 1YE WEITRON 2/4 15-Jul-10 http://www.weitron.com.tw M8050LT1 1000 1 CE V =1V 100 0.1 10 VCE(sat) @ IC=10IB 1 0.01 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 Collector Current (mA) Collector Current (mA) FIG.1 - Current Gain & Collector Current FIG.2 - Saturation Voltage & Collector Current 1000 1 VCE=10V VBE(ON) @ VCE=1V 100 10 0.1

1.44. s8050.pdf Size:2028K _wietron

8050
8050
S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temperature Tstg C -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) V(BR)CEO 25 Vdc Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) V(BR)CBO 40 - Vdc - Vdc V(BR)EBO 5.0 Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0) uAdc ICE0 Collector Cutoff Current (V = 20 Vdc, I =0) - 0.1 CE B ICBO - 0.1 uAdc Collector Cutoff Current (V = 40 Vdc, IE=0) CB - IEBO d Emitter Cutoff Current (VEB= 3.0V c, I =0) 0.1 uAdc C WEITRON http://www.weitron.com.tw S8050 ELECTRICAL CHARACTERISTICS (TA=2

1.45. ss8050lt1.pdf Size:165K _wietron

8050
8050
SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 1500 300 2.4 417 0.1 25 40 100 5.0 100 u 0.15 35 0.15 u 4.0 WEITRON 27-Jul-2012 1/2 http://www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - (IC=100 mAdc, VCE=1.0 Vdc) hFE 600 100 Collector-Emitter Saturation Voltage VCE(sat) - Vdc 0.5 (IC=800 mAdc, IB=80mAdc) CLASSIFICATION OF h FE P Rank Q R S Range 100-200 150-300 200-400 300-600 Marking 1HA 1HC 1HE 1HG SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 D G G 1.70 2.10 E H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L 0.30 0.61 L M J M 0.076 0.25 WEITRON 27-Jul-2012 2/2 http://www.weitron.com.tw

1.46. 8050hxlt1.pdf Size:291K _willas

8050
8050
FM120-M WILLAS 8050HxLT1 THRU General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to NPN Silicon optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. FEATURE • High surge capability. High current capacity in compact package. • Guardring for overvoltage protection. IC 0.071(1.8) • Ul =1.5A.h-speed switching. tra hig 0.056(1.4) Epitaxial planar type. • Silicon epitaxial planar chip, metal silicon junction. NPN complement: 8050H • Lead-free parts meet environmental standards of MIL-STD-19500 /228 We declare that the material of product compliance with RoHS requ

1.47. 8050slt1.pdf Size:478K _willas

8050
8050
FM120-M WILLAS 8050SLT1THRU SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Prod Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (NPN) SOD-123H • Low profile surface mounted application in order to optimize board space. SOT-23 FEATURES • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. 0.071(1.8) 1. BASE • Ultra high-speed switching. 0.056(1.4) 2. EMITTER • Silicon epitaxial planar chip, metal silicon junction. Collector Current: ICt=0.5A 3. COLLECTOR • Lead-free par s meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" MARKING: J3Y Halogen free pro

1.48. 8050plt1_8050qlt1_8050rlt1.pdf Size:404K _willas

8050
8050
FM120-M WILLAS THRU 8050xLT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to NPN Silicon optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. FEATURErge capability. • High su High current capacity in compact package. • Guardring for overvoltage protection. IC 0.071(1.8) • Ul = 0.8A. tra high-speed switching. 0.056(1.4) Epitaxial planar type. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of NPN complement: 8050 MIL-STD-19500 /228 SOT–23 • RoHS product for packing code suffix "G" Halogen

1.49. ha8050s.pdf Size:54K _hsmc

8050
8050
Spec. No. : HE6116 HI-SINCERITY Issued Date : 1997.09.08 Revised Date : 2005.01.20 MICROELECTRONICS CORP. Page No. : 1/5 HA8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features • High DC Current Gain (hFE=100~500 at IC=150mA) • Complementary to HA8550S Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ....................

1.50. hmbt8050.pdf Size:43K _hsmc

8050
8050
Spec. No. : HE6812 HI-SINCERITY Issued Date : 1992.08.25 Revised Date :2010.10.19 MICROELECTRONICS CORP. Page No. : 1/4 HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current hFE=150-400 at IC=150mA • Complementary to HMBT8550 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage...............

1.51. he8050s.pdf Size:54K _hsmc

8050
8050
Spec. No. : HE6110 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2004.07.26 MICROELECTRONICS CORP. Page No. : 1/5 HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applications. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ................................................................................................................

1.52. ha8050.pdf Size:54K _hsmc

8050
8050
Spec. No. : HE6107 HI-SINCERITY Issued Date : 1998.09.05 Revised Date : 2004.11.29 MICROELECTRONICS CORP. Page No. : 1/5 HA8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) • Complementary to HA8550 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................................ +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)................................................................................................... 1 W Total Power Dissipation (TC=25°C).........................................

1.53. he8050.pdf Size:46K _hsmc

8050
8050
Spec. No. : HE6112 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2004.11.29 MICROELECTRONICS CORP. Page No. : 1/4 HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...................................................................................................................... 1 W • Maximum Voltages and Currents (TA=25°C)

See also transistors datasheet: 71T2 , 72T2 , 73T2 , 74T2 , 7NU73 , 7NU74 , 8003BBA , 8003BBB , D882 , 80DA020D , 810BLY-A , 8550 , 9003 , 9010 , 9011 , 9011D , 9011E .

Keywords

 8050 Datasheet  8050 Datenblatt  8050 RoHS  8050 Distributor
 8050 Application Notes  8050 Component  8050 Circuit  8050 Schematic
 8050 Equivalent  8050 Cross Reference  8050 Data Sheet  8050 Fiche Technique

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