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8050 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 8050

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100 MHz

Capacitancia de salida (Cc): 9 pF

Ganancia de corriente contínua (hfe): 85

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 8050

 

8050 Datasheet (PDF)

1.1. pxt8050-c-d-d3.pdf Size:446K _update

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PXT8050-C MCC Micro Commercial Components TM PXT8050-D 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 PXT8050-D3 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Halogen free available upon request by adding suffix "-HF" • Epoxy meets UL 94 V-0 flammability rating NPN Silicon • Moisture Sensitivity Level 1 • Marking:Y1 Plastic-Encapsulate

1.2. ms8050-l.pdf Size:218K _update

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MCC Micro Commercial Components MS8050-L TM 20736 Marilla Street Chatsworth Micro Commercial Components MS8050-H CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.2Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.8A Plastic-Encapsulate • Collector-base Voltage 40V • Operating an

 1.3. s8050b s8050c s8050d.pdf Size:222K _update

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MCC Micro Commercial Components TM S8050-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S8050-C Phone: (818) 701-4933 Fax: (818) 701-4939 S8050-D Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. NPN Silicon • Collector-current 0.5A • Collector-base Voltage 40V Transistors • Operating an

1.4. ms8050-h.pdf Size:218K _update

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MCC Micro Commercial Components MS8050-L TM 20736 Marilla Street Chatsworth Micro Commercial Components MS8050-H CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.2Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.8A Plastic-Encapsulate • Collector-base Voltage 40V • Operating an

 1.5. ss8050-c-d.pdf Size:179K _update

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MCC Micro Commercial Components TM SS8050-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SS8050-D Phone: (818) 701-4933 Fax: (818) 701-4939 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. NPN Silicon • Collector-current 1.5A • Collector-base Voltage 40V Transistors • Operating and storag

1.6. ss8050g.pdf Size:423K _update

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SS8050G Plastic-Encapsulate Transistors Simplified outline SS8050G TRANSISTOR( NPN ) TO-92 Features Power Dissipation 1.EMITTER PCM : 1 W (TA=25.) 2.BASE : 2 W (TC=25.) 3.COLLECTOR 123 Maximum Ratings(T a=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC

1.7. s8050g.pdf Size:361K _update

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S8050G Plastic-Encapsulate Transistors Simplified outline S8050G TRANSISTOR( NPN ) TO-92 Features Power dissipation 1.EMITTER PCM : 0.625 W(Tamb=25℃) 2. COLLECTOR Collector current ICM : 0.5 A 3.BASE Collector-base voltage 123 V(BR)CBO : 40 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ Electrical Characteristics

1.8. mps8050sc.pdf Size:610K _update

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SEMICONDUCTOR MPS8050SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE ·Complementary to MPS8550SC. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1,200 mA PC * Collector Power Dissipation 350 mW Tj Junction Te

1.9. m8050-d.pdf Size:271K _upd

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MCC Micro Commercial Components TM M8050-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 M8050-D Phone: (818) 701-4933 Fax: (818) 701-4939 Features • TO-92 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.8A Plastic-Encapsulate • Collector-base Voltage 40V • Operating an

1.10. mmbt8050.pdf Size:325K _upd

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Tel/Fax: +86 (0)769 82827329 Skype: topdiode Email: info@topdiode.com Website: www.topdiode.com Tel/Fax: +86 (0)769 82827329 Skype: topdiode Email: info@topdiode.com Website: www.topdiode.com

1.11. mms8050-h.pdf Size:181K _upd

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MCC MMS8050-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS8050-H Phone: (818) 701-4933 Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A Plastic-Encapsulate • Collector-base Voltage 40V • Operating

1.12. 8050ss-d 8050ss-c.pdf Size:340K _upd

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MCC Micro Commercial Components TM 8050SS-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 8050SS-D Phone: (818) 701-4933 Fax: (818) 701-4939 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. NPN Silicon • Collector-current 1.5A • Collector-base Voltage 40V Transistors • Operating and storag

1.13. mmss8050-h.pdf Size:174K _upd

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MCC MMSS8050-L TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8050-H CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A Plastic-Encapsulate • Collector-base Voltage 40V • Operat

1.14. l8050hslt1g.pdf Size:83K _upd

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG NPN Silicon Series S-L8050HQLTIG FEATURE High current capacity in compact package. Series IC =1.5 A. Epitaxial planar type. 3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qualified and P

1.15. dc8050.pdf Size:62K _upd

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DC COMPONENTS CO., LTD. DC8050 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Pinning .190(4.83) 1 = Emitter .170(4.33) 2 = Base 2oTyp 3 = Collector .190(4.83) .170(4.33) 2oTyp Absolute Maximum Ratings(TA=25oC) .500 Characterist

1.16. pt23t8050.pdf Size:113K _upd

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 PT23T8050 Transistor Feature 3 - Collector 1 - Base  This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Device meets MSL 1 requirements  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Structu

1.17. gstm8050lt1.pdf Size:210K _upd

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GSTM8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector Current : 800mA Lead(Pb)-Free Packages & Pin Assignments SOT-23 Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Rank Part Marking GSTM8050LT1F SOT-23 P 80P

1.18. lh8050plt1g.pdf Size:237K _upd

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE High current capacity in compact package. Series IC =1.5A. Epitaxial planar type. NPN complement: LH8050 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1 Control Change Requirements; AEC-Q101 Qualified and PP

1.19. f8050hplg.pdf Size:412K _upd

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F8050HPLG Plastic-Encapsulate Transistors Simplified outline F8050HPLG TRANSISTOR( NPN ) SOT-23 Features Complimentary to F8550HQLG Collector Current: IC=0.5A 1. BASE 2. EMITTER Marking: 1HA 3. COLLECTOR Maximum Ratings(T a=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-

1.20. gstss8050lt1.pdf Size:187K _upd

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GSTSS8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector-Base Voltage : 40V Collector Current : 1500mA Lead(Pb)-Free Packages & Pin Assignments SOT-23 Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Markin

1.21. m8050s.pdf Size:512K _upd

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 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 M8050S TRANSISTOR (NPN) 1.EMITTER FEATURES Power Dissipation 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Curr

1.22. mmss8050w-h-j-l.pdf Size:286K _upd

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MMSS8050W-L MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8050W-H CA 91311 Phone: (818) 701-4933 MMSS8050W-J Fax: (818) 701-4939 Features • SOT-323 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.2 Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A Plastic-Encapsulate • Collector-base Voltage 4

1.23. 8050c.pdf Size:263K _upd

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SUNROC 8050C TRANSISTOR(NPN) MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) 1. EMITTER Symbol Parameter Value Units Collector-Base Voltage 2. BASE VCBO 40 V Collector-Emitter Voltage VCEO 25 V 3. COLLECTOR Emitter-Base Voltage VEBO 5 V Collector Current IC 0.5 A Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ℃ Storag Temperature -55~150 ℃

1.24. 8050ss.pdf Size:265K _upd

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 8050SS TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching and Amplification. 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-

1.25. cht8050gp.pdf Size:141K _upd

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CHENMKO ENTERPRISE CO.,LTD CHT8050GP SURFACE MOUNT EPITAXIAL Transistor VOLTAGE 20 Volts CURRENT 700 mAmpere FEATURE * Small surface mounting type. (SOT-23) * High DC current . SOT-23 CONSTRUCTION (1) * NPN transistors in one package. (3) (2) MARKING ( ) ( ) * D805 .055 1.40 .028 0.70 ( ) ( ) .047 1.20 .020 0.50 * E805 ( ) .103 2.64 .086 (2.20) ( ) .045 1.15 C (3) CIR

1.26. mmbt8050lt1.pdf Size:150K _upd

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RoHS MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 1. Complement to MMPT8550LT1 1.BASE Collector Current:Ic=500mA 2.EMITTER o 2.4 Collector Dissipation:Pc=225mW(Tc=25 C) 3.COLLECTOR 1.3 Unit:mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Volta

1.27. gstss8050.pdf Size:183K _upd

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GSTSS8050 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector Current : 1.5A Lead(Pb)-Free Packages & Pin Assignments TO-92 Pin Description 1 Emitter 2 Base 3 Collector Marking Information P/N Package Rank Part Marking GSTSS8050F TO-92 (B) / (C) / (

1.28. f8050hqlg.pdf Size:465K _upd

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F8050HQLG Plastic-Encapsulate Transistors Simplified outline F8050HQLG TRANSISTOR( NPN ) SOT-23 Features Power dissipation PCM : 0.3 W(Tamb=25℃) 1. BASE Collector current 2. EMITTER ICM : 1.5 A 3. COLLECTOR Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ Device Mark

1.29. mmdt8050s.pdf Size:116K _upd

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UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat)=40mV (typ.)@IC / IB = 50mA / 2.5mA

1.30. m8050-c.pdf Size:271K _upd

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MCC Micro Commercial Components TM M8050-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 M8050-D Phone: (818) 701-4933 Fax: (818) 701-4939 Features • TO-92 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.8A Plastic-Encapsulate • Collector-base Voltage 40V • Operating an

1.31. mmt8050.pdf Size:207K _upd

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1.32. mmbt8050d.pdf Size:351K _upd

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MMBT8050D o TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current: IC=0.5A 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipat

1.33. mmss8050-l.pdf Size:174K _upd

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MCC MMSS8050-L TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8050-H CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A Plastic-Encapsulate • Collector-base Voltage 40V • Operat

1.34. mms8050-l.pdf Size:181K _upd

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MCC MMS8050-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS8050-H Phone: (818) 701-4933 Fax: (818) 701-4939 Features • SOT-23 Plastic-Encapsulate Transistors NPN Silicon • Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A Plastic-Encapsulate • Collector-base Voltage 40V • Operating

1.35. dmbt8050.pdf Size:823K _upd

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DC COMPONENTS CO., LTD. DMBT8050 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(2.80) 3 = Collector .047(1.20) .083(2.10) 1 2 .045(1.20) Absolute Maximum Ratings(TA=25oC) .034(0.90) .091(2.30) .0

1.36. shd280504.pdf Size:67K _upd-mosfet

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SENSITRON SHD280504 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4066, REV.- HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 400 Volt, 0.3 Ohm, 14A MOSFET œ Low RDS (on) œ Electrically Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - –20 Volts ID - - 14 Amps ON-ST

1.37. shd280502.pdf Size:65K _upd-mosfet

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SENSITRON SHD280502 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4065, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 100-VOLT, 0.055-OHM MOSFET IN A HERMETIC TO-3 / TO-204AA PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - –20 Volts ID - - 38 Amps CONTINUOUS DRAIN CURRENT @ TC

1.38. fdms8050et30.pdf Size:316K _upd-mosfet

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January 2015 FDMS8050ET30 N-Channel PowerTrench® MOSFET 30 V, 423 A, 0.65 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Extended TJ rating to 175°C improve the overall efficiency and to minimize switch node Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A ringing of DC/DC converters using either synchronous or conventional switching PWM

1.39. tpca8050-h.pdf Size:185K _toshiba2

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TPCA8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPCA8050-H Switching Regulator Applications Unit: mm Motor Drive Applications 1.27 0.4 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595 Small gate charge: QSW = 10 nC (typ.) 1 A Low drain-sour

1.40. tpc8050-h en datasheet 090630.pdf Size:207K _toshiba2

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TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?-H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit: mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.3 m? (typ.) High forward tra

1.41. ss8050.pdf Size:157K _fairchild_semi

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SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 40 V VCEO Collect

1.42. fdms8050.pdf Size:331K _fairchild_semi

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August 2014 FDMS8050 N-Channel PowerTrench® MOSFET 30 V, 200 A, 0.65 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A improve the overall efficiency and to minimize switch node Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A ringing of DC/DC converters using either synchronous or Advanced P

1.43. ss8050.pdf Size:62K _samsung

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SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. Complimentary to SS8550 Collector Current IC=1.5A Collector Dissipation:PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collec

1.44. s8050.pdf Size:173K _utc

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UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR ? DESCRIPTION The UTC S8050 is a low voltage high current small signal 1 NPN transistor, designed for Class B push-pull audio amplifier TO-92 and general purpose applications. ? FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Com

1.45. he8050.pdf Size:216K _utc

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UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR ? DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. ? FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up t

1.46. he8050l.pdf Size:19K _utc

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UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to UTC

1.47. 8050s.pdf Size:207K _utc

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UNISONIC TECHNOLOGIES CO., LTD 8050S NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR ? DESCRIPTION The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. ? FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20V *Complementary t

1.48. utc8050s.pdf Size:23K _utc

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UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V TO-92 *Complementary to UTC 8550S 1:EMITTER 2:

1.49. sps8050.pdf Size:199K _auk

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SPS8050 Semiconductor Semiconductor NPN Silicon Transistor Features • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6?(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code SPS805

1.50. sts8050.pdf Size:237K _auk

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STS8050 NPN Silicon Transistor Descriptions PIN Connection • High current application C • Radio in class B push-pull operation B Feature E • Complementary pair with STS8550 TO-92 Ordering Information Type NO. Marking Package Code STS8050 STS8050 TO-92 Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 30 V Coll

1.51. s8050m.pdf Size:863K _no

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S8050M(BR3DG8050M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 与 S8550M(BR3CG8550M)互补。 Complementary pair with S8550M(BR3CG8550M). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circu

1.52. 8050sst.pdf Size:331K _secos

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8050SST 1.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? General Purpose Switching and Amplification. G H ?Emitter ?Collector ?Base J CLASSIFICATION OF hFE (1) A D Millimeter Product-Rank 8050SST-B 8050SST-C 8050SST-D REF. B Min. Max. A 4.40 4.70 Rang

1.53. s8050.pdf Size:192K _secos

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S8050 NPN Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8550 B 1.200 1.400 1 Base C 0.890 1.110 2 Collector Current: IC=0.5A Emitter D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.600 S

1.54. ss8050w.pdf Size:258K _secos

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SS8050W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM : 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM : 1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO : 40 V S Top V

1.55. ss8050.pdf Size:310K _secos

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SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L ? Complimentary to SS8550 3 3 Top View ? Power Dissipation C B 1 1 2 PCM : 0.3W 2 K E ? Collector Current ICM : 1.5A D Collector H J ? Collector - Base Voltage F G ?? V(BR)CBO : 40V ? Operating & Sto

1.56. s8050t.pdf Size:386K _secos

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S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current: IC = 0.5 A 1 2 3 2.54 0.1 1: Emitter 2: Base 3: Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Pa

1.57. m8050.pdf Size:365K _secos

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M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A ? Power dissipation L 3 3 Top View C B MARKING 1 1 2 Product Marking Code 2 K E M8050 Y11 D H J F G PACKAGE INFORMATION Millimeter Millimeter Package MPQ Leader Size REF. REF. Min. Max.

1.58. ss8050t.pdf Size:105K _secos

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SS8050T NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM : 1 W Collector Current ICM : 1.5 A 1 Collector-base voltage 2 3 V(BR)CBO : 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg : - 55 C ~ + 150 C 1. EMITTER 2 2. BASS 3 . COLLECTOR

1.59. cmbt8050.pdf Size:132K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION (NPN) 1 = BASE SOT-23 2 = EMITTER 3 = COLLECTOR 3 Formed SMD Package 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 25 V Emitter Base Voltage VEB

1.60. cn8050 cn8550 c d.pdf Size:227K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS CN8050 NPN CN8550 PNP TO-92 Plastic Package C B E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 6.0 V IC Collector Current 800 mA ICM Peak Collecto

1.61. mps8050s.pdf Size:391K _kec

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SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 ~ 0.10 L 0.55 VCBO Collector-Base

1.62. mps8050.pdf Size:45K _kec

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SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to MPS8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25℃) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 40 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 25 V _ H J 14.00

1.63. ktc8050s.pdf Size:393K _kec

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SEMICONDUCTOR KTC8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 ~ 0.10 VCBO Collector-Base Voltag

1.64. ktc8050a.pdf Size:48K _kec

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SEMICONDUCTOR KTC8050A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to KTC8550A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25℃) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.0

1.65. ktc8050.pdf Size:38K _kec

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SEMICONDUCTOR KTC8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.00 + 0.

1.66. c8050b c8050c c8050d.pdf Size:120K _usha

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Transistors C8050

1.67. s8050.pdf Size:526K _htsemi

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S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissi

1.68. pxt8050.pdf Size:471K _htsemi

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PXT8 050 TRANSISTOR(NPN) SOT-89 FEATURES Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ Junction Tem

1.69. ss8050.pdf Size:888K _htsemi

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SS8 050 SOT-23 TRANSISTOR(NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junctio

1.70. m8050.pdf Size:479K _htsemi

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M8050 TRANSISTOR(NPN) SOT-23 FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.2 W Tj Junction Temp

1.71. s8050.pdf Size:292K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ?

1.72. ss8050.pdf Size:292K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ?

1.73. m8050.pdf Size:292K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ?

1.74. mmt8050.pdf Size:292K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ?

1.75. s8050a.pdf Size:292K _gsme

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? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage of Small Motor ????? Complementary to GM8550 ? GM8550 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ?

1.76. ss8050 to-92.pdf Size:168K _lge

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SS8050(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM : 1 W (TA=25?) : 2 W (TC=25?) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector

1.77. 8050s to-92.pdf Size:181K _lge

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8050

8050S(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.32 2.92 5.33 MIN Features Complimentary to 8550S 3.43 Collector current: IC=0.5A MIN 2.41 2.67 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter 3.18 Value Units 2.03 4.19 2.67 VCBO Collector-Base Voltage 40 V 1.14 1.40 VCEO Collector-Emitter Voltage 2

1.78. pxt8050.pdf Size:218K _lge

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PXT8050 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 3. EMITTER SOT-89 4.6 B 4.4 1.6 1.8 Features 1.4 1.4 Compliment to PXT8550 2.6 4.25 2.4 3.75 0.8 MARKING: Y1 MIN 0.53 0.40 0.48 0.44 2x) 0.13 B MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.35 0.37 1.5 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Volta

1.79. s8050 to-92.pdf Size:566K _lge

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S8050(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complimentary to S8550 Collector current: IC=0.5A MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in inch

1.80. ss8050 sot-23.pdf Size:323K _lge

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SS8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC C

1.81. m8050 sot-23.pdf Size:234K _lge

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8050

M8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y11 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Coll

1.82. s8050 sot-23.pdf Size:208K _lge

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S8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Cu

1.83. m8050 to-92.pdf Size:200K _lge

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M8050(NPN) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 625 mW Dimensions in inc

1.84. m8050lt1.pdf Size:325K _wietron

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8050

M8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 800 300 2.4 417 0.1 25 100 40 5.0 100 0.15 u 35 u 4.0 0.15 WEITRON 1/4 15-Jul-10 http://www.weitron.com.tw M8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max UnitM Min ON CHARACTERISTICS DC Current Gain - (I

1.85. s8050.pdf Size:2028K _wietron

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8050

S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temperatu

1.86. ss8050.pdf Size:223K _wietron

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8050

SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25?C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation TA=25°C PD W 1.0 TJ,Tstg Junction and

1.87. ss8050lt1.pdf Size:165K _wietron

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8050

SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 1500 300 2.4 417 0.1 25 40 100 5.0 100 u 0.15 35 0.15 u 4.0 WEITRON 27-Jul-2012 1/2 http://www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain

1.88. 8050plt1 8050qlt1 8050rlt1.pdf Size:404K _willas

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FM120-M WILLAS THRU 8050xLT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to NPN Silicon op

1.89. 8050hxlt1.pdf Size:291K _willas

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8050

FM120-M WILLAS 8050HxLT1 THRU General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to NPN Silicon op

1.90. 8050slt1.pdf Size:478K _willas

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8050

FM120-M WILLAS 8050SLT1THRU SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Prod Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (NPN) SOD-123H • Low profile surface mounted application in o

1.91. he8050.pdf Size:46K _hsmc

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8050

Spec. No. : HE6112 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2004.11.29 MICROELECTRONICS CORP. Page No. : 1/4 HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) Abs

1.92. hmbt8050.pdf Size:43K _hsmc

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8050

Spec. No. : HE6812 HI-SINCERITY Issued Date : 1992.08.25 Revised Date :2010.10.19 MICROELECTRONICS CORP. Page No. : 1/4 HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current hFE=150-400 at IC=150mA • Complementary to HMBT8550 Absolute Maximum Ratings • Maximum Temperatur

1.93. ha8050s.pdf Size:54K _hsmc

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8050

Spec. No. : HE6116 HI-SINCERITY Issued Date : 1997.09.08 Revised Date : 2005.01.20 MICROELECTRONICS CORP. Page No. : 1/5 HA8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features • High DC Current Gain (hFE=100~500 at IC=150mA) • Complementary to HA8550S Absolute Maximum Ratings • Maximum Temperatures

1.94. he8050s.pdf Size:54K _hsmc

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8050

Spec. No. : HE6110 HI-SINCERITY Issued Date : 1992.09.30 Revised Date : 2004.07.26 MICROELECTRONICS CORP. Page No. : 1/5 HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applications. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ......................................................................

1.95. ha8050.pdf Size:54K _hsmc

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8050

Spec. No. : HE6107 HI-SINCERITY Issued Date : 1998.09.05 Revised Date : 2004.11.29 MICROELECTRONICS CORP. Page No. : 1/5 HA8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) •

1.96. btn8050a3.pdf Size:265K _cystek

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8050

Spec. No. : C223A3 Issued Date : 2003.07.30 CYStech Electronics Corp. Revised Date : 2013.05.21 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTN8050A3 Description The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • High collector current , I = 1.5A C • Low V CE(sat) • Complementary t

1.97. btn8050ba3.pdf Size:264K _cystek

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8050

Spec. No. : C223A3-B Issued Date : 2004.02.18 CYStech Electronics Corp. Revised Date : 2012.10.03 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTN8050BA3 Description The BTN8050BA3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • High collector current , I = 1.5A C • Low V CE(sat) • Complementa

1.98. ss8050.pdf Size:284K _can-sheng

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8050

TO-92 Plastic-Encapsulate Transistors FEATURES TO-92 Power dissipation PCM : 1 W (TA=25℃) 1.EMITTER : 2 W (TC=25℃) 2.BASE MAXIMUM RATINGS 3.COLLECTOR MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS 1 2 3 Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units VCBO 40 V VCBO VCBO Co

1.99. s8050 to-92.pdf Size:251K _can-sheng

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8050

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current::Ic=0.5A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO

1.100. s8050 sot-23 8325.pdf Size:260K _can-sheng

8050
8050

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current:Ic=0.5A MARKING:J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单

1.101. ss8050 y1 sot-23.pdf Size:550K _can-sheng

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8050

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING:Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base

1.102. l8050m.pdf Size:407K _blue-rocket-elect

8050
8050

L8050M Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 与 L8550M 互补。 Complementary pair with L8550M. 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2

1.103. 8050w.pdf Size:805K _blue-rocket-elect

8050
8050

8050W(BR3DA8050W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package. 特征 / Features 与 8550W(BR3CA8550W)互补。 Complementary pair with 8550W(BR3CA8550W). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circui

1.104. s8050w.pdf Size:904K _blue-rocket-elect

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8050

S8050W(BR3DG8050W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package. 特征 / Features 与 S8550W(BR3CG8550W)互补。 Complementary pair with S8550W(BR3CG8550W). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Cir

1.105. 8050t.pdf Size:402K _blue-rocket-elect

8050
8050

8050T(BR3DA8050T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 与 8550T(BR3CA8550T)互补。 Complementary pair with 8550T(BR3CA8550T). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit

1.106. s8050m.pdf Size:862K _blue-rocket-elect

8050
8050

S8050M(BR3DG8050M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 与 S8550M(BR3CG8550M)互补。 Complementary pair with S8550M(BR3CG8550M). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circu

1.107. 8050m.pdf Size:379K _blue-rocket-elect

8050
8050

8050M(BR3DA8050M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 与 8550M(BR3CA8550M)互补。 Complementary pair with 8550M(BR3CA8550M). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit

1.108. s8050a.pdf Size:420K _blue-rocket-elect

8050
8050

S8050A(BR3DG8050AK) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features PC, IC 大,与 S8550A(BR3CG8550AK)互补。 High PC and IC, complementary pair with S8550A(BR3CG8550AK). 用途 / Applications 用于乙类推挽功放。 Amplifier of portable radios in class B pu

1.109. l8050.pdf Size:597K _blue-rocket-elect

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L8050(BR3DA8050K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features PC, IC 大,与 L8550(BR3CA8550K)互补。 High PC and IC, complementary pair with L8550(BR3CA8550K). 用途 / Applications 用于 2W 乙类推挽功放。 2W output amplifier of portable radios in cl

1.110. st8050-2a.pdf Size:385K _semtech

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ST 8050 (2A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit C

1.111. st8050-1.5a.pdf Size:442K _semtech

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ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Uni

1.112. l8050qlt1g.pdf Size:70K _lrc

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LESHAN RADIO COMPANY, LTD. L8050PLT1G General Purpose Transistors Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. Epitaxial planar type. 3 NPN complement: L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PPA

1.113. lx8050qlt1g.pdf Size:64K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LX8050PLT1G NPN Silicon Series S-LX8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.5A. Epitaxial planar type. 3 NPN complement: LX8050 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1 Control Change Requirements; AEC-Q101 Qualified and PPAP

1.114. lh8050qlt1g.pdf Size:211K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE Series High current capacity in compact package. IC =1.5A. 3 Epitaxial planar type. NPN complement: LH8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 Control Change Requirements; AEC-Q101 Qualified and

1.115. l8050hqlt1g.pdf Size:88K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement: L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

1.116. l8050hplt1g.pdf Size:101K _lrc

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LESHAN RADIO COMPANY, LTD. L8050HQLTIG General Purpose Transistors Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement: L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and

1.117. l8050plt1g.pdf Size:77K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050PLT1G Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. 3 Epitaxial planar type. NPN complement: L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PP

1.118. l8050hrlt1g.pdf Size:84K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE High current capacity in compact package. Series IC =1.5 A. Epitaxial planar type. 3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qualified and P

1.119. hc8050.pdf Size:137K _shantou-huashan

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8050

 Shantou Huashan Electronic Devices Co.,Ltd. HC8050 █ NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature………………………… -55~150℃ TO-92 Tj——Juncttion Temperature…………………………………150℃ PC——Collector Dissipation

1.120. hc8050s.pdf Size:130K _shantou-huashan

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8050

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC8050S █ APPLICATIONS Audio Frequency Amplifier. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature………………………… -55~150℃ TO-92 Tj——Juncttion Temperature…………………………………150℃ PC——Collector Dissipation……………………

1.121. h8050.pdf Size:137K _shantou-huashan

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 Shantou Huashan Electronic Devices Co.,Ltd. H8050 █ NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature………………………… -55~150℃ TO-92 Tj——Juncttion Temperature…………………………………150℃ PC——Collector Dissipatio

1.122. h8050s.pdf Size:130K _shantou-huashan

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NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H8050S █ APPLICATIONS Audio Frequency Amplifier. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature………………………… -55~150℃ TO-92 Tj——Juncttion Temperature…………………………………150℃ PC——Collector Dissipation……………………

1.123. 3dg8050.pdf Size:120K _china

8050

3DG8050 型 NPN 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 PCM TA=25℃ 330 mW 极 ICM 300 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥30 V V(BR)CEO ICE=0.1mA ≥25 V V(BR)EBO IEB=0.1mA ≥6.0 V 直 ICBO VCB=20V ≤0.1 μA 流 参 VBEsat ≤1.2 V IC=50mA 数 IB=5mA VCEsat ≤0.5 V VCE=1V hFE 20~100 IC=0.

1.124. 3dg8050m.pdf Size:281K _china

8050
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S8050M(3DG8050M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于功率放大电路。/Purpose: Power amplifier applications. 特点:与 S8550M(3CG8550M)互补。/Features: Complementary pair with S8550M(3CG8550M). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 40 V CBO V 25 V CEO V 6.0 V EBO I 800 mA C

1.125. 3dg8050a.pdf Size:189K _china

8050
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S8050A(3DG8050A) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于乙类推挽功放。 Purpose: Amplifier of portable radios in class B push-pull operation. 特点:P 、I 大,与 S8550A(3CG8550A)互补。 C C Features: High P ,I , complementary pair with S8550A(3CG8550A). C C 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating

1.126. ftc8050.pdf Size:222K _first_silicon

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SEMICONDUCTOR FTC8050 TECHNICAL DATA TRANSISTOR (NPN) FTC8050 B C FEATURES Complimentary to FTA8550 Collector current: IC=0.5A DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) C 3.70 MAX D D 0.55 MAX Symbol Parameter Value Unit E 1.00 F 1.27 G 0.85 VCBO Collector-Base Voltage 40 V H 0.45 _ H J 14.00 0.50 + VCEO Col

1.127. ftc8050h.pdf Size:352K _first_silicon

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SEMICONDUCTOR FTC8050H TECHNICAL DATA General Purpose Transistors NPN Silicon FEATURE 3 High current capacity in compact package. I C =1.5A. 1 Epitaxial planar type. 2 PNP complement: FTA8550H Pb-Free Package is available. SOT–23 COLLECTOR DEVICE MARKING AND ORDERING INFORMATION 3 Shipping Device Marking 1 FTC8050H 1FC 3000/Tape&Reel BASE 2 E

1.128. kst8050s.pdf Size:970K _kexin

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SMD Type Transistors SMD Type NPN Transistors KST8050S SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current: IC=0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5

1.129. kst8050.pdf Size:1008K _kexin

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SMD Type Transistors SMD Type NPN Transistors KST8050 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current: IC=1.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V

1.130. kst8050m.pdf Size:810K _kexin

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SMD Type SMD Type Transistors NPN Transistors KST8050M SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current: IC=0.8A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Bas

1.131. kst8050d-50.pdf Size:1155K _kexin

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SMD Type Transistors SMD Type NPN Transistors KST8050D-50 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features ● Collector Current Capability IC=1.2A ● Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collec

1.132. h8050.pdf Size:788K _kexin

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SMD Type Transistors NPN Transistors H8050 ■ Features 1.70 0.1 ● Collector Power Dissipation: PC=1W ● Collector Current: IC=1.5A Comlementary to H8550 ● 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V C

1.133. kst8050x.pdf Size:594K _kexin

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SMD Type Transistors NPN Transistors KST8050X SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Power Dissipation: PC=0.3W ● Collector Current: IC=1.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitte

1.134. s8050.pdf Size:180K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 1 2 3 V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

1.135. ss8050.pdf Size:752K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25℃) 3. COLLECTOR : 2 W (TC=25℃) 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Volt

1.136. s8050lt1.pdf Size:262K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8050LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25℃) 1. 3 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Unit: mm Operating and storage junction temperature range TJ, Tstg:

1.137. ss8050lt1.pdf Size:961K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.3 W ( Tamb=25℃) 1. 3 Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 25 V Operating and storage junction temperature range Unit: mm TJ, Tst

Otros transistores... 71T2 , 72T2 , 73T2 , 74T2 , 7NU73 , 7NU74 , 8003BBA , 8003BBB , D882 , 80DA020D , 810BLYA , 8550 , 9003 , 9010 , 9011 , 9011D , 9011E .

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