8050 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 8050 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 9 pF
Ganancia de corriente contínua (hFE): 85
Encapsulados: TO92
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PXT8050 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 3. EMITTER SOT-89 4.6 B 4.4 1.6 1.8 Features 1.4 1.4 Compliment to PXT8550 2.6 4.25 2.4 3.75 0.8 MARKING Y1 MIN 0.53 0.40 0.48 0.44 2x) 0.13 B MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.35 0.37 1.5 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base
s8050 sot-23.pdf
S8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8550 Collector Current IC=0.5A MARKING J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collect
m8050 sot-23.pdf
M8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING Y11 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC
8050s to-92.pdf
8050S(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.32 2.92 5.33 MIN Features Complimentary to 8550S 3.43 Collector current IC=0.5A MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 3.18 Value Units 2.03 4.19 2.67 VCBO Collector-Base Voltage 40 V 1.14 1.40 VCEO Collector-Emitter Volt
ss8050 to-92.pdf
SS8050(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM 1 W (TA=25 ) 2 W (TC=25 ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC C
ss8050.pdf
SS8050(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM 1 W (TA=25 ) 2 W (TC=25 ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector
m8050 to-92.pdf
M8050(NPN) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 625 mW Dimensions i
ss8050 sot-23.pdf
SS8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A
m8050lt1.pdf
M8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 800 300 2.4 417 0.1 25 100 40 5.0 100 0.15 u 35 u 4.0 0.15 WEITRON 1/4 15-Jul-10 http //www.weitron.com.tw M8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max UnitM Min ON CHARACTERISTICS DC Current Gain -
s8050.pdf
S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temper
ss8050.pdf
SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25 C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation TA=25 C PD W 1.0 TJ,Tstg Junction
ss8050lt1.pdf
SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 1500 300 2.4 417 0.1 25 40 100 5.0 100 u 0.15 35 0.15 u 4.0 WEITRON 27-Jul-2012 1/2 http //www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gai
8050plt1 8050qlt1 8050rlt1.pdf
FM120-M WILLAS THRU 8050xLT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to NPN Silicon
8050hxlt1.pdf
FM120-M WILLAS 8050HxLT1 THRU General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to NPN Silicon
8050slt1.pdf
FM120-M WILLAS 8050SLT1THRU SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Prod Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (NPN) SOD-123H Low profile surface mounted application i
hmbt8050.pdf
Spec. No. HE6812 HI-SINCERITY Issued Date 1992.08.25 Revised Date 2010.10.19 MICROELECTRONICS CORP. Page No. 1/4 HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features High DC Current hFE=150-400 at IC=150mA Complementary to HMBT8550 Absolute Maximum Ratings Maximum Tempera
he8050.pdf
Spec. No. HE6112 HI-SINCERITY Issued Date 1992.09.30 Revised Date 2004.11.29 MICROELECTRONICS CORP. Page No. 1/4 HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features High total power dissipation (PT 2W, TC=25 C) High collector current (IC 1.5A)
ha8050s.pdf
Spec. No. HE6116 HI-SINCERITY Issued Date 1997.09.08 Revised Date 2005.01.20 MICROELECTRONICS CORP. Page No. 1/5 HA8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features High DC Current Gain (hFE=100 500 at IC=150mA) Complementary to HA8550S Absolute Maximum Ratings Maximum Temperatu
he8050s.pdf
Spec. No. HE6110 HI-SINCERITY Issued Date 1992.09.30 Revised Date 2004.07.26 MICROELECTRONICS CORP. Page No. 1/5 HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................................................................
ha8050.pdf
Spec. No. HE6107 HI-SINCERITY Issued Date 1998.09.05 Revised Date 2004.11.29 MICROELECTRONICS CORP. Page No. 1/5 HA8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features High total power dissipation (PT 2W, TC=25 C) High collector current (IC 1.5A)
s8050.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM 0.625 W (Tamb=25 ) 3. COLLECTOR Collector current ICM 0.5 A Collector-base voltage 1 2 3 V(BR)CBO 40 V Operating and storage junction temperature range TJ, Tstg -55 to +150
s8050lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8050LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM 0.5 A Collector-base voltage V(BR)CBO 40 V Unit mm Operating and storage junction temperature range TJ, Tstg
ss8050.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM 1 W (TA=25 ) 3. COLLECTOR 2 W (TC=25 ) 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Volt
ss8050lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM 0.3 W ( Tamb=25 ) 1. 3 Collector current ICM 1.5 A Collector-base voltage V(BR)CBO 25 V Operating and storage junction temperature range Unit mm TJ, Tst
btn8050ba3.pdf
Spec. No. C223A3-B Issued Date 2004.02.18 CYStech Electronics Corp. Revised Date 2012.10.03 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTN8050BA3 Description The BTN8050BA3 is designed for use in output amplifier of portable radios in class B push pull operation. Features High collector current , I = 1.5A C Low V CE(sat) Complementa
btn8050a3.pdf
Spec. No. C223A3 Issued Date 2003.07.30 CYStech Electronics Corp. Revised Date 2013.05.21 Page No. 1/5 General Purpose NPN Epitaxial Planar Transistor BTN8050A3 Description The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features High collector current , I = 1.5A C Low V CE(sat) Complementary t
s8050 to-92.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current Ic=0.5A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO
ss8050 y1 sot-23.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base
ss8050.pdf
TO-92 Plastic-Encapsulate Transistors FEATURES TO-92 Power dissipation PCM 1 W (TA=25 ) 1.EMITTER 2 W (TC=25 ) 2.BASE MAXIMUM RATINGS 3.COLLECTOR MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS 1 2 3 Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units VCBO 40 V VCBO VCBO Co
8050t.pdf
8050T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features 8550T Complementary pair with 8550T. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 1 2
8050m.pdf
8050M Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 8550M Complementary pair with 8550M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning
l8050.pdf
L8050(BR3DA8050K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features PC, IC , L8550(BR3CA8550K) High PC and IC, complementary pair with L8550(BR3CA8550K). / Applications 2W 2W output amplifier of portable radios in cl
stc8050n.pdf
STC8050N Semiconductor Semiconductor NPN Silicon Transistor Descriptions High current application Radio in class B push-pull operation Feature Complementary pair with STA8550N Ordering Information Type NO. Marking Package Code STC8050N STC8050 TO-92N Outline Dimensions unit mm 4.20 4.40 2.25 Max. 0.52 Max. 0.90 Max. 1.27 Typ. 0.40 Max. 1 2 3 3.55
8050w.pdf
8050W(BR3DA8050W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features 8550W(BR3CA8550W) Complementary pair with 8550W(BR3CA8550W). / Applications Power amplifier applications. / Equivalent Circui
s8050a.pdf
S8050A(BR3DG8050AK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features PC, IC , S8550A(BR3CG8550AK) High PC and IC, complementary pair with S8550A(BR3CG8550AK). / Applications Amplifier of portable radios in class B pu
s8050m.pdf
S8050M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features S8550M Complementary pair with S8550M. / Applications Power amplifier applications. / Equivalent Circuit / Pinnin
s8050mg.pdf
S8050MG Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features S8550MG Complementary pair with S8550MG.HF Product. / Applications Power amplifier applications. / Equivalent Ci
s8050w.pdf
S8050W(BR3DG8050W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features S8550W(BR3CG8550W) Complementary pair with S8550W(BR3CG8550W). / Applications Power amplifier applications. / Equivalent Cir
l8050m.pdf
L8050M Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features L8550M Complementary pair with L8550M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 3 2
st8050-1.5a.pdf
ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Uni
st8050-2a.pdf
ST 8050 (2A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit C
mmbt8050cw mmbt8050dw.pdf
MMBT8050W (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 5 V Peak Collector Current ICM 1.5 A Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Te
8050b 8050c 8050d 8050e.pdf
8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit
8050u-c 8050u-d.pdf
8050U NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. Absolute Maximum Ratings (Ta = 25 ) Symbol Value Unit Parameter Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation Ptot 625 m
8050c 8050d.pdf
8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit
l8050hqlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and
lh8050qlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE Series High current capacity in compact package. IC =1.5A. 3 Epitaxial planar type. NPN complement LH8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 Control Change Requirements; AEC-Q101 Qualified and
lh8050plt1g lh8050plt3g lh8050qlt1g lh8050qlt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE Series High current capacity in compact package. IC =1.5A. 3 Epitaxial planar type. NPN complement LH8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 Control Change Requirements; AEC-Q101 Qualified and
l8050hplt1g l8050hplt3g l8050hqlt1g l8050hqlt3g l8050hrlt1g l8050hrlt3g l8050hslt1g l8050hslt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and
l8050hplt1g.pdf
LESHAN RADIO COMPANY, LTD. L8050HQLTIG General Purpose Transistors Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and
l8050hslt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG NPN Silicon Series S-L8050HQLTIG FEATURE High current capacity in compact package. Series IC =1.5 A. Epitaxial planar type. 3 NPN complement L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qualified and P
l8050hrlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE High current capacity in compact package. Series IC =1.5 A. Epitaxial planar type. 3 NPN complement L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qualified and P
lx8050qlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors LX8050PLT1G NPN Silicon Series S-LX8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.5A. Epitaxial planar type. 3 NPN complement LX8050 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1 Control Change Requirements; AEC-Q101 Qualified and PPAP
l8050plt1g l8050qlt1g l8050rlt1g l8050slt1g.pdf
LESHAN RADIO COMPANY, LTD. L8050PLT1G General Purpose Transistors Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. Epitaxial planar type. 3 NPN complement L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PPA
l8050hplt1g l8050hqlt1g l8050hrlt1g l8050hslt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE High current capacity in compact package. Series IC =1.5 A. Epitaxial planar type. 3 NPN complement L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qualified and P
l8050qlt1g.pdf
LESHAN RADIO COMPANY, LTD. L8050PLT1G General Purpose Transistors Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. Epitaxial planar type. 3 NPN complement L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PPA
lh8050plt1g lh8050qlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE Series High current capacity in compact package. IC =1.5A. 3 Epitaxial planar type. NPN complement LH8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 Control Change Requirements; AEC-Q101 Qualified and
lh8050plt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE High current capacity in compact package. Series IC =1.5A. Epitaxial planar type. NPN complement LH8050 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1 Control Change Requirements; AEC-Q101 Qualified and PP
l8050plt1g l8050plt3g l8050qlt1g l8050qlt3g l8050rlt1g l8050rlt3g l8050slt1g l8050slt3g.pdf
LESHAN RADIO COMPANY, LTD. L8050PLT1G General Purpose Transistors Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. Epitaxial planar type. 3 NPN complement L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PPA
l8050plt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050PLT1G Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. 3 Epitaxial planar type. NPN complement L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PP
h8050.pdf
Shantou Huashan Electronic Devices Co.,Ltd. H8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 TO-92 Tj Juncttion Temperature 150 PC Collector Dissipatio
3dg8050.pdf
3DG8050 NPN PCM TA=25 330 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB 0.1mA 30 V V(BR)CEO ICE 0.1mA 25 V V(BR)EBO IEB 0.1mA 6.0 V ICBO VCB=20V 0.1 A VBEsat 1.2 V IC=50mA IB=5mA VCEsat 0.5 V VCE=1V hFE 20 100 IC=0.
ftc8050h.pdf
SEMICONDUCTOR FTC8050H TECHNICAL DATA General Purpose Transistors NPN Silicon FEATURE 3 High current capacity in compact package. I C =1.5A. 1 Epitaxial planar type. 2 PNP complement FTA8550H Pb-Free Package is available. SOT 23 COLLECTOR DEVICE MARKING AND ORDERING INFORMATION 3 Shipping Device Marking 1 FTC8050H 1FC 3000/Tape&Reel BASE 2 E
ss8050g.pdf
SS8050G Plastic-Encapsulate Transistors Simplified outline SS8050G TRANSISTOR NPN TO-92 Features Power Dissipation 1.EMITTER PCM 1 W (TA=25.) 2.BASE 2 W (TC=25.) 3.COLLECTOR 123 Maximum Ratings(T a=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC
s8050g.pdf
S8050G Plastic-Encapsulate Transistors Simplified outline S8050G TRANSISTOR NPN TO-92 Features Power dissipation 1.EMITTER PCM 0.625 W Tamb=25 2. COLLECTOR Collector current ICM 0.5 A 3.BASE Collector-base voltage 123 V(BR)CBO 40 V Operating and storage junction temperature range TJ Tstg -55 to +150 Electrical Characteristics
f8050hplg.pdf
F8050HPLG Plastic-Encapsulate Transistors Simplified outline F8050HPLG TRANSISTOR NPN SOT-23 Features Complimentary to F8550HQLG Collector Current IC=0.5A 1. BASE 2. EMITTER Marking 1HA 3. COLLECTOR Maximum Ratings(T a=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-
ftc8050.pdf
SEMICONDUCTOR FTC8050 TECHNICAL DATA TRANSISTOR (NPN) FTC8050 B C FEATURES Complimentary to FTA8550 Collector current IC=0.5A DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G MAXIMUM RATINGS (Ta=25 unless otherwise noted) C 3.70 MAX D D 0.55 MAX Symbol Parameter Value Unit E 1.00 F 1.27 G 0.85 VCBO Collector-Base Voltage 40 V H 0.45 _ H J 14.00 0.50 + VCEO Col
f8050hqlg.pdf
F8050HQLG Plastic-Encapsulate Transistors Simplified outline F8050HQLG TRANSISTOR NPN SOT-23 Features Power dissipation PCM 0.3 W Tamb=25 1. BASE Collector current 2. EMITTER ICM 1.5 A 3. COLLECTOR Collector-base voltage V(BR)CBO 40 V Operating and storage junction temperature range TJ Tstg -55 to +150 Device Mark
kst8050d-50.pdf
SMD Type Transistors SMD Type NPN Transistors KST8050D-50 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=1.2A Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collec
h8050.pdf
SMD Type Transistors NPN Transistors H8050 Features 1.70 0.1 Collector Power Dissipation PC=1W Collector Current IC=1.5A Comlementary to H8550 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V C
kst8050.pdf
SMD Type Transistors SMD Type NPN Transistors KST8050 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current IC=1.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V
kst8050m.pdf
SMD Type SMD Type Transistors NPN Transistors KST8050M SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current IC=0.8A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Bas
kst8050x.pdf
SMD Type Transistors NPN Transistors KST8050X SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Power Dissipation PC=0.3W Collector Current IC=1.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitte
kst8050d.pdf
SMD Type Transistors SMD Type NPN Transistors KST8050D SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current IC=1.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEB
kst8050s.pdf
SMD Type Transistors SMD Type NPN Transistors KST8050S SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current IC=0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5
mmbt8050d.pdf
MMBT8050D o TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current IC=0.5A 1 BASE 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipat
cht8050gp.pdf
CHENMKO ENTERPRISE CO.,LTD CHT8050GP SURFACE MOUNT EPITAXIAL Transistor VOLTAGE 20 Volts CURRENT 700 mAmpere FEATURE * Small surface mounting type. (SOT-23) * High DC current . SOT-23 CONSTRUCTION (1) * NPN transistors in one package. (3) (2) MARKING ( ) ( ) * D805 .055 1.40 .028 0.70 ( ) ( ) .047 1.20 .020 0.50 * E805 ( ) .103 2.64 .086 (2.20) ( ) .045 1.15 C (3) CIR
dmbt8050.pdf
DC COMPONENTS CO., LTD. DMBT8050 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(2.80) 3 = Collector .047(1.20) .083(2.10) 1 2 .045(1.20) Absolute Maximum Ratings(TA=25oC) .034(0.90) .091(2.30) .0
dc8050.pdf
DC COMPONENTS CO., LTD. DC8050 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Pinning .190(4.83) 1 = Emitter .170(4.33) 2 = Base 2oTyp 3 = Collector .190(4.83) .170(4.33) 2oTyp Absolute Maximum Ratings(TA=25oC) .500 Characterist
s8050da.pdf
IC 1.5A Epitaxial silicon VCEO 45V High switching speed PC 1W S8550DA Complementary to S8550DA RoHS RoHS product High frequency switch power supply Commonly power amplifier circuit High frequency power transform TO-92
3dg8050m.pdf
S8050M(3DG8050M) NPN /SILICON NPN TRANSISTOR /Purpose Power amplifier applications. S8550M(3CG8550M) /Features Complementary pair with S8550M(3CG8550M). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 40 V CBO V 25 V CEO V 6.0 V EBO I 800 mA C
pxt8050.pdf
Product specification PLASTIC-ENCAPSULATE TRANSISTORS PXT8050(NPN) FEATURES Commplimentray to PXT8550 Pb Lead-free APPLICATIONS This device is designed as a general purpose amplifier and switching. SOT-89 ORDERING INFORMATION Type No. Marking Package Code PXT8050 8050 SOT-89 none is for Lead Free package; G is for Halogen Free package. MAX
ss8050.pdf
Product specification NPN Silicon Epitaxial Planar Transistor SS8050 FEATURES Pb Collector Current.(I = 1.5A C Lead-free Complementary To SS8550. Collector dissipation P =300mW(T =25 ) C C APPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code SS8050 Y1 SOT-23 none is for Lead Free package;
gstss8050.pdf
GSTSS8050 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 25V amplifier and switch. Collector Current 1.5A Lead(Pb)-Free Packages & Pin Assignments TO-92 Pin Description 1 Emitter 2 Base 3 Collector Marking Information P/N Package Rank Part Marking GSTSS8050F TO-92 (B) / (C) / (
gstss8050lt1.pdf
GSTSS8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 25V amplifier and switch. Collector-Base Voltage 40V Collector Current 1500mA Lead(Pb)-Free Packages & Pin Assignments SOT-23 Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Markin
gstm8050lt1.pdf
GSTM8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 25V amplifier and switch. Collector Current 800mA Lead(Pb)-Free Packages & Pin Assignments SOT-23 Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Rank Part Marking GSTM8050LT1F SOT-23 P 80P
ks8050l.pdf
KS8050L NPN Silicon Transistor Descriptions PIN Connection High current application Features Complementary pair with KS8550L Ordering Information Type NO. Marking Package Code KK KS8050L SOT-23 Device Code HFE Grade Year& Week Code AUK Dalian SOT-23 Absolute maximum ratings Ta=25 C Characteristic Symbol Ratings Unit Colle
k8050s.pdf
K8050S NPN Silicon Transistor 2018.09.07 2018.09.07 2018.09.07 2018.09.07 1 000 2017.11.02 2 001 2018.08.22 3 TAPING 003 2018.09.07 K8050S NPN S
3dg8050a.pdf
S8050A(3DG8050A) NPN /SILICON NPN TRANSISTOR Purpose Amplifier of portable radios in class B push-pull operation. P I , S8550A(3CG8550A) C C Features High P ,I , complementary pair with S8550A(3CG8550A). C C /Absolute maximum ratings(Ta=25 ) Symbol Rating
pt23t8050.pdf
PT23T8050 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics Lead finish 100% matte Sn(Tin) Mounting position Any Qualified max reflow temperature 260 Device meets MSL 1 requirements Pure tin plating 7 17 um Pin flatness 3mil Structu
shd280504.pdf
SENSITRON SHD280504 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4066, REV.- HERMETIC POWER MOSFET N-CHANNEL FEATURES 400 Volt, 0.3 Ohm, 14A MOSFET Low RDS (on) Electrically Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - 14 Amps ON-ST
shd280502.pdf
SENSITRON SHD280502 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4065, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION A 100-VOLT, 0.055-OHM MOSFET IN A HERMETIC TO-3 / TO-204AA PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - 38 Amps CONTINUOUS DRAIN CURRENT @ TC
ss8050-l ss8050-h ss8050-j.pdf
SS8050 TRANSISTOR(NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperat
s8050b s8050c s8050d.pdf
S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temper
s8050tl s8050th s8050tj.pdf
S8050T NPN Transistors Marking Marking J3Y 3 2 1.Base 2.Emitter 3.Collector 1 Simplified outline(SOT-523) Absolute Maximum Ratings Ta = 25 Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.2 W Tj Junction Temperature 150
s8050w-l s8050w-h s8050w-j.pdf
S8050W TRANSISTOR (NPN) FEATURES SOT-323 Complimentary to S8550 W Collector Current IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Diss
ss8050w.pdf
SS8050W NPN Transistors Features 3 High Collector Current Complementary to SS8550W 2 1.Base 2.Emitter 3.Collector 1 Simplified outline(SOT-323) Absolute Maximum Ratings Ta = 25 Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A PC Collector Power Dissip
8050c.pdf
SUNROC 8050C TRANSISTOR(NPN) MAXIMUM RATINGS(Ta=25 unless otherwise noted) 1. EMITTER Symbol Parameter Value Units Collector-Base Voltage 2. BASE VCBO 40 V Collector-Emitter Voltage VCEO 25 V 3. COLLECTOR Emitter-Base Voltage VEBO 5 V Collector Current IC 0.5 A Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Storag Temperature -55 150
mmbt8050.pdf
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s8050l s8050h.pdf
R UMW S8050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current IC=0.5A 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC C
ss8050l ss8050h ss8050j.pdf
R UMW UMW SS8050 SOT-23 Plastic-Encapsulate Transistors SOT-23 SS8050 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING Y1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Conti
mmbt8050lt1.pdf
RoHS MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 1. Complement to MMPT8550LT1 1.BASE Collector Current Ic=500mA 2.EMITTER o 2.4 Collector Dissipation Pc=225mW(Tc=25 C) 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Volta
mmbt8050c mmbt8050d.pdf
MMBT8050C/D(1.5A) Features For switching and amplifier applications Especially suitable for AF-Driver stages and low power output stages Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation PD 350 mW
s8050.pdf
S8050 General Purpose Transistors NPN Silicon Package outline Features High current capacity in compact package IC = 0.5A. SOT-23 Epitaxial planar type Pb-Free package is available Suffix "-H" indicates Halogen free parts, ex. S8050-H. (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.047 (1.20) 0.013 (0.32) 0.108 (2.75) Mechanical data 0.083 (2.10) Epoxy UL94-V0 r
ss8050.pdf
SS8050 General Purpose Transistors NPN Silicon Features Package outline High current capacity in compact package IC = 1.5A. Epitaxial planar type SOT-23 Pb-Free package is available Suffix "-H" indicates Halogen free parts, ex. SS8050-H. (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.047 (1.20) 0.013 (0.32) 0.108 (2.75) Mechanical data 0.083 (2.10) Epoxy UL94-V0 r
s8050.pdf
S8050 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features Complimentary to S8550 Collector Current IC=0.5A Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameter Value Symbol Units 1. BASE 40 VCBO Collector-Base Voltage V 2. EMITTER 25 VCEO Collector-Emitter Voltage V 3. COLLECTOR VEBO Emit
ss8050.pdf
SS8050 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS Features SOT-23 High Collector Current Complementary to SS8550 Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO 1. BASE VCEO Collector-Emitter Voltage 25 V 2. EMITTER 3. COLLECTOR VEBO Emitter-Ba
m8050.pdf
M8050 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features Complimentary to M8550 Collector Current IC=0.8A Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameter Value Symbol Units 1. BASE 40 VCBO Collector-Base Voltage V 2. EMITTER 25 VCEO Collector-Emitter Voltage V 3. COLLECTOR VEBO Emit
s8050.pdf
S8050 General Purpose Transistors NPN Silicon FEATURES Complimentary to S8550 SOT-23 MARKING J3Y MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO VCE Collector-Emitter Voltage 25 V O V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power Dissipation 300 mW C R Thermal Resistance F
ss8050.pdf
SS8050 General Purpose Transistors NPN Silicon FEATURES Complimentary to SS8550 SOT-23 MARKING Y1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO VCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBO I Collector Current 1.5 A C P Collector Power Dissipation 300 mW C R Thermal Resistance F
ss8050.pdf
NPN SMD Transistors Formosa MS SS8050 General Purpose Transistors NPN Silicon Package outline SOT-23 Features High current capacity in compact package IC = 1.5A. Epitaxial planar type Pb-Free package is available Suffix "-H" indicates Halogen free parts, ex. SS8050-H. (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.047 (1.20) 0.013 (0.32) 0.108 (2.75) Mechanical data
s8050.pdf
S8050 HD-ST0.4 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Complimentary to S8550 Collector Current IC=0.5A Marking J3Y Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V V Collector-Emitter Voltage 25 V CEO C V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power Dissipation 300 mW
ss8050.pdf
SS8050 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Complimentary to SS8550 Collector Current IC=1.5A Marking Y1 Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V V Collector-Emitter Voltage 25 V CEO C V Emitter-Base Voltage 5 V EBO I Collector Current C 1.5 A P Collector Power Dissipation 300 mW C B E
s8050.pdf
S8050 NPN Silicon General Purpose Transistor TO-92 FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550 1.25 0.2 Collector Current IC = 0.5 A 1 2 3 2.54 0.1 1 Emitter 2 Base 3 Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25 C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitt
ss8050.pdf
SS8050 Silicon Epitaxial Planar Transistor FEATURES Collector Current.(I = 1.5A C Complementary To SS8550. Collector Power Dissipation P =2W(T =25 ) C C APPLICATIONS High Collector Current. TO-92 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Ratings Units Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 25
s8050.pdf
S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current IC=0.5A 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector
ss8050.pdf
SS8 050 SOT-23 TRANSISTOR(NPN) FEATURES 1. BASE High Collector Current 2. EMITTER Complementary to SS8550 3. COLLECTOR MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector
ss8050-ms.pdf
www.msksemi.com SS8050-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Complimentary to SS8550-MS 1. BASE MARKING Y1 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector
s8050-ms.pdf
www.msksemi.com S8050-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Complimentary to S8550-MS Collector Current IC=0.5A 1. BASE 2. EMITTER MARKING J3Y SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Ba
ss8050.pdf
SS8050 PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES Collector Current IC = 1.5A C E B MECHANICAL DATA Available in SOT-23, SOT-323, TO-92 Package C Solderability MIL-STD-202, Method 208 E Full RoHS Compliance B E B C ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODE SS8050 - -T3 SOT-23 Tape Reel Y1 SS8050 - -
mmbt8050-c mmbt8050-d.pdf
MMBT8050 NPN Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the PNP Transistor MMBT8550 is Recommended. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40 V CBO Collector Emitter Voltage V
mmbt8050c-1.5a mmbt8050d-1.5a.pdf
MMBT8050-1.5A NPN Transistor Features SOT-23 For Switching and AF Amplifer Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code MMBT8050C-1.5A X1 MMBT8050D-1.5A Y1 1.Base 2. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40
s8050.pdf
S8050 S8050 SOT-23 NPN TRANSISTOR 3 FEATURES Complimentary to S8550 Collector Current IC=0.5A 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 40 V 2.EMITTER Collector Emitter Voltage VCEO 25 V 3.COLLECTOR Emitter Base Voltage VEBO 5 V 500 mA Collector Current Continuous IC mW Collect
ss8050.pdf
SS8050 SS8050 SOT-23 NPN TRANSISTOR 3 FEATURES Complimentary to SS8550 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 40 V 2.EMITTER Collector Emitter Voltage VCEO 25 V 3.COLLECTOR Emitter Base Voltage VEBO 5 V 1.5 A Collector Current Continuous IC mW Collector Power Dissipation PC 300
s8050-l s8050-h s8050-j.pdf
S8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S8550 ; Complementary to S8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package
ss8050-l ss8050-h ss8050-j.pdf
Jingdao Microelectronics co.LTD SS8050 SS8050 SOT-23 NPN TRANSISTOR 3 FEATURES Complimentary to SS8550 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 40 V 2.EMITTER Collector Emitter Voltage VCEO 25 V 3.COLLECTOR Emitter Base Voltage VEBO 5 V
s8050-l s8050-h s8050-j.pdf
Jingdao Microelectronics co.LTD S8050 S8050 SOT-23 NPN TRANSISTOR 3 FEATURES Complimentary to S8550 Collector Current IC=0.5A 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 40 V 2.EMITTER Collector Emitter Voltage VCEO 25 V 3.COLLECTOR Emi
ss8050-l ss8050-h ss8050-j.pdf
SS8 050 SOT-23 TRANSISTOR(NPN) FEATURES 1. BASE High Collector Current 2. EMITTER Complementary to SS8550 3. COLLECTOR MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector
s8050-l s8050-h.pdf
S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complementary to S8550 1. BASE Collector Current IC=0.5A 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector
ss8050w-l ss8050w-h ss8050w-j.pdf
SS8050W SS8050W TRANSISTOR (NPN) FEATURES Complimentary to SS8550W MARKING Y1 SOT 323 3. COLLECTOR 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0
pxt8050c pxt8050d.pdf
PXT8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation Ptot 625
s8050.pdf
Integrated in OVP&OCP products provider S8050 TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current IC=0.8A 1 BASE 2 EMITTER 3 COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collecto
ss8050.pdf
Integrated in OVP&OCP products provider SS8050 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Vol
s8050 s8050l s8050h s8050j.pdf
S8050 SOT-23 NPN Transistors 3 2 1.Base 2.Emitter 1 3.Collector Features Collector Current IC=0.5A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 0.5 A Collector Dissipation PC 0.3 W Junction Tempe
ss8050 ss8050-l ss8050-h ss8050-j.pdf
SS8050 SOT-23 NPN Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector Collector Current IC=1.5A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 1.5 A Collector Dissipation PC 0.3 W Junction Tempera
ss8050l ss8050h ss8050j.pdf
SS8050 TRANSISTOR (NPN) SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO VCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBO I Collector Current 1.5 A C P Collector Power Dissipation 250 mW C R Therm
s8050l s8050h s8050j.pdf
S8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S8550 ; Complementary to S8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package
ss8050l ss8050h ss8050j.pdf
SS8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features SS8550 ; Complementary to SS8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package
s8050.pdf
S8050 S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 SOT-23 Collector Current IC=0.5A 1 BASE 2 EMITTER MARKING J3Y 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collecto
pxt8050-c pxt8050-d pxt8050-d1 pxt8050-d2.pdf
PXT8050 PXT8050 PXT8050 PXT8050 TRANSISTOR (NPN) SOT-89 FEATURES Compliment to PXT8550 1. BASE MARKING Y1 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBO I Collector Current -Continuous 1.5 A C P Collector Power dissipat
ss8050.pdf
SS8050 SS8050 TRANSISTOR (NPN) SS8050 FEATURES Complimentary to SS8550 SOT-23 1 BASE MARKING Y1 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0
ss8050w-l ss8050w-h ss8050w-j.pdf
SS8050W SS8050W SS8050W SS8050W TRANSISTOR(NPN) SS8 0 50 W SOT 323 3 FEATURES Complimentary to SS8550W 1. BASE 1 2. EMITTER 2 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Co
sebt8050-c sebt8050-d.pdf
SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SEB T8050 EPITAXIAL PLANAR PNP TRANSISTOR Features Complementary to SEBT8050 Applications HIGH CURRENT APPLICATION Construction Maximum Ratings (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC mA
s8050-l s8050-h.pdf
RoHS RoHS COMPLIANT COMPLIANT S8050-L THRU S8050-H NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking S8050-L J3Y L S8050-H J3Y Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Coll
ss8050-l ss8050-h.pdf
RoHS COMPLIANT SS8050-L THRU SS8050-H NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 9
s8050.pdf
TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com S8050 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current IC=0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-B
pxt8050.pdf
PXT8050 SOT-89-3L PXT8050 TRANSISTOR (NPN) FEATURES Compliment to PXT8550 1. BASE MARKING Y1 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ J
ss8050-1.5a.pdf
SS8050-1.5A NPN Transistor Features SOT-23 For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code Y1 1.Base 2. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40 V CBO Collector Emitter Voltage V 25 V CEO
s8050.pdf
S8050 S8050 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S8550 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking J3Y Maximum Ratings & Thermal Characteristics TA = 25 C unle
ss8050.pdf
SS8050 SS8050 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to SS8550 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking Y1 Maximum Ratings & Thermal Characteristics TA = 25 C un
s8050.pdf
S8050 TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current IC=0.5A 1 BASE 2 EMITTER 3 COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector
s8050t.pdf
S8050T TRANSISTOR (NPN) SOT-523 FEATURES Complimentary to S8550T 1. BASE Collector Current IC=0.5A 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Diss
s8050.pdf
GUANGDONG FENGHUA SEMICONDUCTOR TECHNOLOGY CO.,LTD S8050 10 NPN Transistor NO.10,2nd Nanxiang Road, Guangzhou Science Park,Guangzhou City,Guangdong Province,China. Applications . General purpose application switching
fht8050-me.pdf
FHT8050-ME NPN Transistor DESCRIPTIONS SOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Additiona
fht8050.pdf
FHT8050 APPROVAL SHEET FHT8050 CUSTOMER NAME PRODUCT NAME SOT-23 CUSTOMER PART NAME FENGHUA PART NAME FHT8050Y-E DATE 2008 10 21 CUSTOMER MANUFACTURER APPROVAL APPROVAL DESIGNER CHECKER APPROVER DESIGNER CHECKER AUTHORITY /
fhta8050-me.pdf
FHTA8050-ME NPN Transistor DESCRIPTIONS SOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Addition
fhtl8050-me.pdf
FHTL8050-ME NPN Transistor DESCRIPTIONS SOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Addition
ss8050.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD SS8050 FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to SS8550 SS8550 (Ta=25 ) CHARACTERISTIC Symbol Rating Unit Collector-Base Voltage VCB
s8050.pdf
S8050 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 25Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=25V. Collector current IC=0.5A. ansition frequency fT>150MHz @ Tr IC=20mAdc, VCE=6Vdc, f=30MHz. In compliance with EU RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Soldera
ss8050.pdf
SS8050 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 25Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=25V. Collector current IC=1.5A. ansition frequency fT>100MHz @ Tr IC=50mAdc, VCE=10Vdc, f=30MHz. In compliance with EU RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Solde
s8050.pdf
S8050 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to S8550 Excellent h Linearity FE High Collector Current Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol
pxt8050.pdf
PXT8050 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to PXT8550 Surface Mount device SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V 40 V CBO Collect
ss8050.pdf
SS8050 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to SS8550 High Collector Current Surface Mount device SOT-323 MECHANICAL DATA Case SOT-323 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base
s8050.pdf
NPN S8050 S8050 TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current IC=0.5A 1 BASE 2 EMITTER 3 COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Volt
ss8050.pdf
NPN SS8050 SS8050 TRANSISTOR (NPN) SOT-23 FEATURES Complimentary to SS8550 1 BASE 2 EMITTER 3 COLLECTOR MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Cu
s8050.pdf
S8050 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector Current IC=0.5A MARKING J3Y MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO SOT-23 V Collector-Emitter Voltage 25 V CEO VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA 1. BASE 2. EMITT
ss8050t23.pdf
SS8050T23 NPN Transistor ROHS FEATURE NPN Transistor Collector Current IC=1.5A MARKING Y1 SOT-23 Absolute maximum ratings (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj
ss8050.pdf
SS8050 MOT NPN TRANSISTOR NPN NPN High Voltage Transistor SMD SS8050 NPN, BEC Transistor Polarity NPN General Purpose Transistors Transistor pinout BEC SOT-23 Package Marking Code Y1 hFE 100 200, 200 300 Ldeal for Medium Power Amplification and Switching Inner circuit
mmbtss8050l mmbtss8050h mmbtss8050j.pdf
MMBTSS8050 NPN Silicon General Purpose Transistors Features SOT23 High current capacity in compact package IC = 1.5A. Epitaxial planar type Pb-Free package is available Mechanical data Epoxy UL94-V0 rated flame retardant (B) (C) Case Molded plastic, SOT-23 (A) Terminals Solder plated, solderable per MIL-STD-750, Method 2026 0.063 (1.60) 0.027 (0.67)
s8050l s8050h s8050j.pdf
S8050 Features Complimentary to S8550 Collector Current IC=0.5A SOT-23 Marking Code J3Y A Dim Min Max C A 0.37 0.51 B C B 1.20 1.40 C 2.30 2.50 TOP VIEW B E D 0.89 1.03 D E G E 0.45 0.60 G 1.78 2.05 H H 2.80 3.00 J MAXIMUM RATINGS (Ta=25 unless otherwise noted) 0.013 0.10 K K 0.903 1.10 Symbol Parameter
ss8050l ss8050h ss8050j.pdf
SS8050 Features Complimentary to SS8550 Collector Current IC=1.5A SOT-23 A Marking Code Y 1 Dim Min Max C A 0.37 0.51 B C B 1.20 1.40 C 2.30 2.50 TOP VIEW B E D 0.89 1.03 D E G E 0.45 0.60 G 1.78 2.05 H H 2.80 3.00 J 0.013 0.10 K MAXIMUM RATINGS (Ta=25 unless otherwise noted) K 0.903 1.10 J L 0.45 0.61
hs8050 hs8050a hm8050 hmbt8050 hss8050 hmc6802.pdf
HMBT8050 NPN-TRANSISTOR NPN, 8050 NPN NPN Plastic-Encapsulate Transistors SMD HS8050, HS8050A HM8050, HMBT8050 High breakdown voltage Low collector-emitter saturation voltage HSS8050, HMC6802 Complementary to HMBT8550 Transistor Polarity NPN
s8050b s8050c s8050d.pdf
Jiangsu Weida Semiconductor Co., Ltd. S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit VCEO Collector-Emitter Voltage 25 Vdc VCBO Collector-Base Voltage 40 Vdc VEBO Emitter-Base VOltage 5.0 Vdc Collector Current IC 500 mAdc PD Total Device Dissipation T =25 C 0.625 W A Junction Te
ss8050b ss8050c ss8050d ss8050e.pdf
Jiangsu Weida Semiconductor Co., Ltd. SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25 C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation
Otros transistores... 71T2, 72T2, 73T2, 74T2, 7NU73, 7NU74, 8003BBA, 8003BBB, C1815, 80DA020D, 810BLYA, 8550, 9003, 9010, 9011, 9011D, 9011E
Parámetros del transistor bipolar y su interrelación.
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