8050 - Даташиты. Аналоги. Основные параметры

isc Silicon NPN Power Transistor 8050 DESCRIPTION With SOT-23 packaging High collector-base voltage Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio output stage and converters/inverters circuits ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 40 V CBO V Col

Continental Device India Pvt. Limited An IATF 16949, ISO9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS CD8050 TO-92 Leaded Package RoHS compliant ABSOLUTE MAXIMUM RATINGS (Ta = 25 OC) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 40 V Collector -Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 2 A Collector Power Dissipat

TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 9.2 nC (typ.) Low drain-source ON-resistance RDS (ON) = 9.3 m (typ.)

TPCA8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCA8050-H Switching Regulator Applications Unit mm Motor Drive Applications 1.27 0.4 0.1 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595 Small gate charge QSW = 10 nC (typ.) 1 A

August 2014 FDMS8050 N-Channel PowerTrench MOSFET 30 V, 200 A, 0.65 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 A improve the overall efficiency and to minimize switch node Max rDS(on) = 0.9 m at VGS = 4.5 V, ID = 47 A ringing of DC/DC converters using either synchronous or Advanced P

January 2015 FDMS8050ET30 N-Channel PowerTrench MOSFET 30 V, 423 A, 0.65 m Features General Description This N-Channel MOSFET has been designed specifically to Extended TJ rating to 175 C improve the overall efficiency and to minimize switch node Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 A ringing of DC/DC converters using either synchronous or conventional switching PWM

July 2010 SS8050 NPN Epitaxial Silicon Transistor Features 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current IC=1.5A Collector Power Dissipation PC=2W (TC=25 C) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collecto

SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. Complimentary to SS8550 Collector Current IC=1.5A Collector Dissipation PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6

MCC MMSS8050-L TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8050-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5A Plastic-Encapsulate Collector-base Voltage 40V Operat

MCC MMS8050-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS8050-H Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating

MCC Micro Commercial Components TM S8050-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S8050-C Phone (818) 701-4933 Fax (818) 701-4939 S8050-D Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating an

MCC Micro Commercial Components TM M8050-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 M8050-D Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.8A Plastic-Encapsulate Collector-base Voltage 40V Operating an

MCC MMSS8050-L TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8050-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5A Plastic-Encapsulate Collector-base Voltage 40V Operatin

MCC Micro Commercial Components TM 8050SS-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 8050SS-D Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 1.5A Collector-base Voltage 40V Transistors Operating and storag

MCC Micro Commercial Components TM M8050-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 M8050-D Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.8A Plastic-Encapsulate Collector-base Voltage 40V Operating an

MCC MMS8050-L Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 MMS8050-H Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating

MCC Micro Commercial Components MS8050-L TM 20736 Marilla Street Chatsworth Micro Commercial Components MS8050-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.2Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.8A Plastic-Encapsulate Collector-base Voltage 40V Operating an

MCC Micro Commercial Components MS8050-L TM 20736 Marilla Street Chatsworth Micro Commercial Components MS8050-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.2Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.8A Plastic-Encapsulate Collector-base Voltage 40V Operating an

MCC MMSS8050-L TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8050-H CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5A Plastic-Encapsulate Collector-base Voltage 40V Operat

MMSS8050W-L MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MMSS8050W-H CA 91311 Phone (818) 701-4933 MMSS8050W-J Fax (818) 701-4939 Features SOT-323 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.2 Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5A Plastic-Encapsulate Collector-base Voltage 4

MMS8050 Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 NPN Silicon Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Plastic-Encapsulate Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified Transistor Operating Junction Tempera

MCC Micro Commercial Components TM SS8050-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SS8050-D Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 1.5A Collector-base Voltage 40V Transistors Operating and storag

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UTC HE8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *Complimentary to U

UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC S8050 is a low voltage high current small signal 1 NPN transistor, designed for Class B push-pull audio amplifier TO-92 and general purpose applications. FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V

UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. FEATURES *Collector current up to 1.5A *Collector-Emitter voltag

UNISONIC TECHNOLOGIES CO., LTD 8050S NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20V * Complem

UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat)=40mV (typ.)@IC / IB = 50mA / 2.5mA

UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V TO-92 *Complementary to UTC 8550S 1 EMITTER

SPS8050 Semiconductor Semiconductor NPN Silicon Transistor Features Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance RON=0.6 (Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code S

STS8050 NPN Silicon Transistor Descriptions PIN Connection High current application C Radio in class B push-pull operation B Feature E Complementary pair with STS8550 TO-92 Ordering Information Type NO. Marking Package Code STS8050 STS8050 TO-92 Absolute Maximum Ratings (Ta=25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 30 V C

@vic AV8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION 3 The @vic AV8050S is a low voltage high current small signal 1 NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. 2 FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complementary to @v

S8050 NPN Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8550 B 1.200 1.400 1 Base C 0.890 1.110 2 Collector Current IC=0.5A Emitter D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.600

S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free TO-92 FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current IC = 0.5 A 1 2 3 2.54 0.1 1 Emitter 2 Base 3 Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25 C

SS8050W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM 1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO 40 V S To

SS8050T NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM 1 W Collector Current ICM 1.5 A 1 Collector-base voltage 2 3 V(BR)CBO 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg - 55 C + 150 C 1. EMITTER 2 2. BASS 3 . COLLEC

8050SST 1.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G H Emitter Collector Base J CLASSIFICATION OF hFE (1) A D Millimeter Product-Rank 8050SST-B 8050SST-C 8050SST-D REF. B Min. Max. A 4.40

M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES A Power dissipation L 3 3 Top View C B MARKING 1 1 2 Product Marking Code 2 K E M8050 Y11 D H J F G PACKAGE INFORMATION Millimeter Millimeter Package MPQ Leader Size REF. REF. Min.

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS CN8050 NPN CN8550 PNP TO-92 Plastic Package C B E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 6.0 V IC Collector Current 800 mA ICM Peak Colle

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION (NPN) 1 = BASE SOT-23 2 = EMITTER 3 = COLLECTOR 3 Formed SMD Package 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 25 V Emitter Base Voltage

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S8050 TRANSISTOR (NPN) FEATURES 1.EMITTER Complimentary to S8550 Collector current IC=0.5A 2.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emit

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L PXT8050 TRANSISTOR (NPN) FEATURES Compliment to PXT8550 1. BASE MARKING Y1 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 M8050S TRANSISTOR (NPN) 1.EMITTER FEATURES Power Dissipation 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Curr

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050SS TRANSISTOR (NPN) FEATURES TO 92 General Purpose Switching and Amplification. 1. EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit 8050SS=Device code 8050SS Solid dot=Green molding compound device, Z if none,the normal device Z=Rank of hFE XXX=Code 1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors JC T TO-92 8050S TRANSISTOR (NPN) FEATURES 1.EMITTER Complimentary to 8550S 2.COLLECTOR Collector Current IC=0.5A 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 SS8050 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. BASE Power Dissipation 3. COLLECTOR PCM 1 W (TA=25.) 2 W (TC=25.) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEB

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 M8050 TRANSISTOR (NPN) 1.EMITTER FEATURES Power Dissipation 2. BASE 3. COLLECTOR Equivalent Circuit M8050 M8050=Device code Solid dot = Green molding compound device, Z if none, the normal device Z=Range of hFE XXX=Code 1 1 ORDERING INFORMATION Pa

SEMICONDUCTOR MPS8050SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE Complementary to MPS8550SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1,200 mA PC * Collector Power Dissipation 350 mW Tj Junction Te

SEMICONDUCTOR KTC8050A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8550A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.0

SEMICONDUCTOR KTC8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.10 VCBO Collector-Base Voltag

SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8550S. DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 MAXIMUM RATING (Ta=25 ) H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 0.10 Q L 0.55 VCBO P P Co

SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to MPS8550. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25 ) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 40 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 25 V _ H J 14.00 + 0.

Transistors C8050 www.DataSheet4U.com www.DataSheet4U.com

S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current IC=0.8A 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.8 A PC Collector

PXT8 050 TRANSISTOR(NPN) SOT-89 FEATURES Compliment to PXT8550 1. BASE MARKING Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ Junctio

SS8 050 SOT-23 TRANSISTOR(NPN) FEATURES 1. BASE High Collector Current 2. EMITTER Complementary to SS8550 3. COLLECTOR MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector

M8050 TRANSISTOR(NPN) SOT-23 FEATURES Power dissipation 1. BASE 2. EMITTER MARKING Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC Collector Power Dissipation 0.2 W Tj Junction

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES FEATURES FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES FEATURES FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES FEATURES FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8050 FEATURES FEATURES FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )

S8050 Silicon Epitaxial Planar Transistor FEATURES A SOT-23 High Collector Current.(IC= 500mA). Dim Min Max A 2.70 3.10 E Complementary To S8550. B 1.10 1.50 K B C 1.0 Typical Excellent HFE Linearity. D 0.4 Typical E 0.35 0.48 J High total power dissipation.(PC=300mW). D G 1.80 2.00 G H 0.02 0.1 J 0.1 Typical H APPLICATIONS K 2.20 2.60 C All Dimensions in mm

S8050(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complimentary to S8550 Collector current IC=0.5A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in

PXT8050 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 3. EMITTER SOT-89 4.6 B 4.4 1.6 1.8 Features 1.4 1.4 Compliment to PXT8550 2.6 4.25 2.4 3.75 0.8 MARKING Y1 MIN 0.53 0.40 0.48 0.44 2x) 0.13 B MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.35 0.37 1.5 3.0 Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base

S8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8550 Collector Current IC=0.5A MARKING J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collect

M8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING Y11 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.8 A PC

8050S(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.32 2.92 5.33 MIN Features Complimentary to 8550S 3.43 Collector current IC=0.5A MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 3.18 Value Units 2.03 4.19 2.67 VCBO Collector-Base Voltage 40 V 1.14 1.40 VCEO Collector-Emitter Volt

SS8050(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM 1 W (TA=25 ) 2 W (TC=25 ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC C

SS8050(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM 1 W (TA=25 ) 2 W (TC=25 ) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector

M8050(NPN) TO-92 Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 800 mA PC Collector Power Dissipation 625 mW Dimensions i

SS8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A

M8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 800 300 2.4 417 0.1 25 100 40 5.0 100 0.15 u 35 u 4.0 0.15 WEITRON 1/4 15-Jul-10 http //www.weitron.com.tw M8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max UnitM Min ON CHARACTERISTICS DC Current Gain -

S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temper

SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25 C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation TA=25 C PD W 1.0 TJ,Tstg Junction

SS8050LT1 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO 25 40 5.0 1500 300 2.4 417 0.1 25 40 100 5.0 100 u 0.15 35 0.15 u 4.0 WEITRON 27-Jul-2012 1/2 http //www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gai

FM120-M WILLAS THRU 8050xLT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to NPN Silicon

FM120-M WILLAS 8050HxLT1 THRU General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to NPN Silicon

FM120-M WILLAS 8050SLT1THRU SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Prod Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (NPN) SOD-123H Low profile surface mounted application i

Spec. No. HE6812 HI-SINCERITY Issued Date 1992.08.25 Revised Date 2010.10.19 MICROELECTRONICS CORP. Page No. 1/4 HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features High DC Current hFE=150-400 at IC=150mA Complementary to HMBT8550 Absolute Maximum Ratings Maximum Tempera

Spec. No. HE6112 HI-SINCERITY Issued Date 1992.09.30 Revised Date 2004.11.29 MICROELECTRONICS CORP. Page No. 1/4 HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features High total power dissipation (PT 2W, TC=25 C) High collector current (IC 1.5A)

Spec. No. HE6116 HI-SINCERITY Issued Date 1997.09.08 Revised Date 2005.01.20 MICROELECTRONICS CORP. Page No. 1/5 HA8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features High DC Current Gain (hFE=100 500 at IC=150mA) Complementary to HA8550S Absolute Maximum Ratings Maximum Temperatu

Spec. No. HE6110 HI-SINCERITY Issued Date 1992.09.30 Revised Date 2004.07.26 MICROELECTRONICS CORP. Page No. 1/5 HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................................................................

Spec. No. HE6107 HI-SINCERITY Issued Date 1998.09.05 Revised Date 2004.11.29 MICROELECTRONICS CORP. Page No. 1/5 HA8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features High total power dissipation (PT 2W, TC=25 C) High collector current (IC 1.5A)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM 0.625 W (Tamb=25 ) 3. COLLECTOR Collector current ICM 0.5 A Collector-base voltage 1 2 3 V(BR)CBO 40 V Operating and storage junction temperature range TJ, Tstg -55 to +150

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8050LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM 0.5 A Collector-base voltage V(BR)CBO 40 V Unit mm Operating and storage junction temperature range TJ, Tstg

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM 1 W (TA=25 ) 3. COLLECTOR 2 W (TC=25 ) 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Volt

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM 0.3 W ( Tamb=25 ) 1. 3 Collector current ICM 1.5 A Collector-base voltage V(BR)CBO 25 V Operating and storage junction temperature range Unit mm TJ, Tst

Spec. No. C223A3-B Issued Date 2004.02.18 CYStech Electronics Corp. Revised Date 2012.10.03 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTN8050BA3 Description The BTN8050BA3 is designed for use in output amplifier of portable radios in class B push pull operation. Features High collector current , I = 1.5A C Low V CE(sat) Complementa

Spec. No. C223A3 Issued Date 2003.07.30 CYStech Electronics Corp. Revised Date 2013.05.21 Page No. 1/5 General Purpose NPN Epitaxial Planar Transistor BTN8050A3 Description The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features High collector current , I = 1.5A C Low V CE(sat) Complementary t

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current Ic=0.5A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base

TO-92 Plastic-Encapsulate Transistors FEATURES TO-92 Power dissipation PCM 1 W (TA=25 ) 1.EMITTER 2 W (TC=25 ) 2.BASE MAXIMUM RATINGS 3.COLLECTOR MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS 1 2 3 Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units VCBO 40 V VCBO VCBO Co

8050T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features 8550T Complementary pair with 8550T. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 1 2

8050M Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 8550M Complementary pair with 8550M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning

L8050(BR3DA8050K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features PC, IC , L8550(BR3CA8550K) High PC and IC, complementary pair with L8550(BR3CA8550K). / Applications 2W 2W output amplifier of portable radios in cl

STC8050N Semiconductor Semiconductor NPN Silicon Transistor Descriptions High current application Radio in class B push-pull operation Feature Complementary pair with STA8550N Ordering Information Type NO. Marking Package Code STC8050N STC8050 TO-92N Outline Dimensions unit mm 4.20 4.40 2.25 Max. 0.52 Max. 0.90 Max. 1.27 Typ. 0.40 Max. 1 2 3 3.55

8050W(BR3DA8050W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features 8550W(BR3CA8550W) Complementary pair with 8550W(BR3CA8550W). / Applications Power amplifier applications. / Equivalent Circui

S8050A(BR3DG8050AK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features PC, IC , S8550A(BR3CG8550AK) High PC and IC, complementary pair with S8550A(BR3CG8550AK). / Applications Amplifier of portable radios in class B pu

S8050M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features S8550M Complementary pair with S8550M. / Applications Power amplifier applications. / Equivalent Circuit / Pinnin

S8050MG Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features S8550MG Complementary pair with S8550MG.HF Product. / Applications Power amplifier applications. / Equivalent Ci

S8050W(BR3DG8050W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features S8550W(BR3CG8550W) Complementary pair with S8550W(BR3CG8550W). / Applications Power amplifier applications. / Equivalent Cir

L8050M Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features L8550M Complementary pair with L8550M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 3 2

ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Uni

ST 8050 (2A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit C

MMBT8050W (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 5 V Peak Collector Current ICM 1.5 A Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Te

8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit

8050U NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. Absolute Maximum Ratings (Ta = 25 ) Symbol Value Unit Parameter Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation Ptot 625 m

8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE Series High current capacity in compact package. IC =1.5A. 3 Epitaxial planar type. NPN complement LH8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 Control Change Requirements; AEC-Q101 Qualified and

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE Series High current capacity in compact package. IC =1.5A. 3 Epitaxial planar type. NPN complement LH8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 Control Change Requirements; AEC-Q101 Qualified and

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

LESHAN RADIO COMPANY, LTD. L8050HQLTIG General Purpose Transistors Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG NPN Silicon Series S-L8050HQLTIG FEATURE High current capacity in compact package. Series IC =1.5 A. Epitaxial planar type. 3 NPN complement L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qualified and P

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE High current capacity in compact package. Series IC =1.5 A. Epitaxial planar type. 3 NPN complement L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qualified and P

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LX8050PLT1G NPN Silicon Series S-LX8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.5A. Epitaxial planar type. 3 NPN complement LX8050 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1 Control Change Requirements; AEC-Q101 Qualified and PPAP

LESHAN RADIO COMPANY, LTD. L8050PLT1G General Purpose Transistors Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. Epitaxial planar type. 3 NPN complement L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PPA

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE High current capacity in compact package. Series IC =1.5 A. Epitaxial planar type. 3 NPN complement L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qualified and P

LESHAN RADIO COMPANY, LTD. L8050PLT1G General Purpose Transistors Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. Epitaxial planar type. 3 NPN complement L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PPA

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE Series High current capacity in compact package. IC =1.5A. 3 Epitaxial planar type. NPN complement LH8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 Control Change Requirements; AEC-Q101 Qualified and

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE High current capacity in compact package. Series IC =1.5A. Epitaxial planar type. NPN complement LH8050 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1 Control Change Requirements; AEC-Q101 Qualified and PP

LESHAN RADIO COMPANY, LTD. L8050PLT1G General Purpose Transistors Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. Epitaxial planar type. 3 NPN complement L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PPA

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050PLT1G Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. 3 Epitaxial planar type. NPN complement L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PP

Shantou Huashan Electronic Devices Co.,Ltd. H8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 TO-92 Tj Juncttion Temperature 150 PC Collector Dissipatio

3DG8050 NPN PCM TA=25 330 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB 0.1mA 30 V V(BR)CEO ICE 0.1mA 25 V V(BR)EBO IEB 0.1mA 6.0 V ICBO VCB=20V 0.1 A VBEsat 1.2 V IC=50mA IB=5mA VCEsat 0.5 V VCE=1V hFE 20 100 IC=0.

SEMICONDUCTOR FTC8050H TECHNICAL DATA General Purpose Transistors NPN Silicon FEATURE 3 High current capacity in compact package. I C =1.5A. 1 Epitaxial planar type. 2 PNP complement FTA8550H Pb-Free Package is available. SOT 23 COLLECTOR DEVICE MARKING AND ORDERING INFORMATION 3 Shipping Device Marking 1 FTC8050H 1FC 3000/Tape&Reel BASE 2 E

SS8050G Plastic-Encapsulate Transistors Simplified outline SS8050G TRANSISTOR NPN TO-92 Features Power Dissipation 1.EMITTER PCM 1 W (TA=25.) 2.BASE 2 W (TC=25.) 3.COLLECTOR 123 Maximum Ratings(T a=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC

S8050G Plastic-Encapsulate Transistors Simplified outline S8050G TRANSISTOR NPN TO-92 Features Power dissipation 1.EMITTER PCM 0.625 W Tamb=25 2. COLLECTOR Collector current ICM 0.5 A 3.BASE Collector-base voltage 123 V(BR)CBO 40 V Operating and storage junction temperature range TJ Tstg -55 to +150 Electrical Characteristics

F8050HPLG Plastic-Encapsulate Transistors Simplified outline F8050HPLG TRANSISTOR NPN SOT-23 Features Complimentary to F8550HQLG Collector Current IC=0.5A 1. BASE 2. EMITTER Marking 1HA 3. COLLECTOR Maximum Ratings(T a=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-

SEMICONDUCTOR FTC8050 TECHNICAL DATA TRANSISTOR (NPN) FTC8050 B C FEATURES Complimentary to FTA8550 Collector current IC=0.5A DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G MAXIMUM RATINGS (Ta=25 unless otherwise noted) C 3.70 MAX D D 0.55 MAX Symbol Parameter Value Unit E 1.00 F 1.27 G 0.85 VCBO Collector-Base Voltage 40 V H 0.45 _ H J 14.00 0.50 + VCEO Col

F8050HQLG Plastic-Encapsulate Transistors Simplified outline F8050HQLG TRANSISTOR NPN SOT-23 Features Power dissipation PCM 0.3 W Tamb=25 1. BASE Collector current 2. EMITTER ICM 1.5 A 3. COLLECTOR Collector-base voltage V(BR)CBO 40 V Operating and storage junction temperature range TJ Tstg -55 to +150 Device Mark

SMD Type Transistors SMD Type NPN Transistors KST8050D-50 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=1.2A Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collec

SMD Type Transistors NPN Transistors H8050 Features 1.70 0.1 Collector Power Dissipation PC=1W Collector Current IC=1.5A Comlementary to H8550 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V C

SMD Type Transistors SMD Type NPN Transistors KST8050 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current IC=1.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V

SMD Type SMD Type Transistors NPN Transistors KST8050M SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current IC=0.8A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Bas

SMD Type Transistors NPN Transistors KST8050X SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Power Dissipation PC=0.3W Collector Current IC=1.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitte

SMD Type Transistors SMD Type NPN Transistors KST8050D SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current IC=1.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEB

SMD Type Transistors SMD Type NPN Transistors KST8050S SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current IC=0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5

MMBT8050D o TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current IC=0.5A 1 BASE 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipat

CHENMKO ENTERPRISE CO.,LTD CHT8050GP SURFACE MOUNT EPITAXIAL Transistor VOLTAGE 20 Volts CURRENT 700 mAmpere FEATURE * Small surface mounting type. (SOT-23) * High DC current . SOT-23 CONSTRUCTION (1) * NPN transistors in one package. (3) (2) MARKING ( ) ( ) * D805 .055 1.40 .028 0.70 ( ) ( ) .047 1.20 .020 0.50 * E805 ( ) .103 2.64 .086 (2.20) ( ) .045 1.15 C (3) CIR

DC COMPONENTS CO., LTD. DMBT8050 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(2.80) 3 = Collector .047(1.20) .083(2.10) 1 2 .045(1.20) Absolute Maximum Ratings(TA=25oC) .034(0.90) .091(2.30) .0

DC COMPONENTS CO., LTD. DC8050 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Pinning .190(4.83) 1 = Emitter .170(4.33) 2 = Base 2oTyp 3 = Collector .190(4.83) .170(4.33) 2oTyp Absolute Maximum Ratings(TA=25oC) .500 Characterist

IC 1.5A Epitaxial silicon VCEO 45V High switching speed PC 1W S8550DA Complementary to S8550DA RoHS RoHS product High frequency switch power supply Commonly power amplifier circuit High frequency power transform TO-92

S8050M(3DG8050M) NPN /SILICON NPN TRANSISTOR /Purpose Power amplifier applications. S8550M(3CG8550M) /Features Complementary pair with S8550M(3CG8550M). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 40 V CBO V 25 V CEO V 6.0 V EBO I 800 mA C

Product specification PLASTIC-ENCAPSULATE TRANSISTORS PXT8050(NPN) FEATURES Commplimentray to PXT8550 Pb Lead-free APPLICATIONS This device is designed as a general purpose amplifier and switching. SOT-89 ORDERING INFORMATION Type No. Marking Package Code PXT8050 8050 SOT-89 none is for Lead Free package; G is for Halogen Free package. MAX

Product specification NPN Silicon Epitaxial Planar Transistor SS8050 FEATURES Pb Collector Current.(I = 1.5A C Lead-free Complementary To SS8550. Collector dissipation P =300mW(T =25 ) C C APPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code SS8050 Y1 SOT-23 none is for Lead Free package;

GSTSS8050 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 25V amplifier and switch. Collector Current 1.5A Lead(Pb)-Free Packages & Pin Assignments TO-92 Pin Description 1 Emitter 2 Base 3 Collector Marking Information P/N Package Rank Part Marking GSTSS8050F TO-92 (B) / (C) / (

GSTSS8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 25V amplifier and switch. Collector-Base Voltage 40V Collector Current 1500mA Lead(Pb)-Free Packages & Pin Assignments SOT-23 Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Markin

GSTM8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 25V amplifier and switch. Collector Current 800mA Lead(Pb)-Free Packages & Pin Assignments SOT-23 Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Rank Part Marking GSTM8050LT1F SOT-23 P 80P

KS8050L NPN Silicon Transistor Descriptions PIN Connection High current application Features Complementary pair with KS8550L Ordering Information Type NO. Marking Package Code KK KS8050L SOT-23 Device Code HFE Grade Year& Week Code AUK Dalian SOT-23 Absolute maximum ratings Ta=25 C Characteristic Symbol Ratings Unit Colle

K8050S NPN Silicon Transistor 2018.09.07 2018.09.07 2018.09.07 2018.09.07 1 000 2017.11.02 2 001 2018.08.22 3 TAPING 003 2018.09.07 K8050S NPN S

S8050A(3DG8050A) NPN /SILICON NPN TRANSISTOR Purpose Amplifier of portable radios in class B push-pull operation. P I , S8550A(3CG8550A) C C Features High P ,I , complementary pair with S8550A(3CG8550A). C C /Absolute maximum ratings(Ta=25 ) Symbol Rating

PT23T8050 Transistor Feature 3 - Collector 1 - Base This device is Pb-Free, Halogen Free/BFR Free and Rohs compliant. 2 - Emitter Mechanical Characteristics Lead finish 100% matte Sn(Tin) Mounting position Any Qualified max reflow temperature 260 Device meets MSL 1 requirements Pure tin plating 7 17 um Pin flatness 3mil Structu

SENSITRON SHD280504 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4066, REV.- HERMETIC POWER MOSFET N-CHANNEL FEATURES 400 Volt, 0.3 Ohm, 14A MOSFET Low RDS (on) Electrically Equivalent to IRF350 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - 14 Amps ON-ST

SENSITRON SHD280502 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4065, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION A 100-VOLT, 0.055-OHM MOSFET IN A HERMETIC TO-3 / TO-204AA PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 20 Volts ID - - 38 Amps CONTINUOUS DRAIN CURRENT @ TC

SS8050 TRANSISTOR(NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperat

S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temper

S8050T NPN Transistors Marking Marking J3Y 3 2 1.Base 2.Emitter 3.Collector 1 Simplified outline(SOT-523) Absolute Maximum Ratings Ta = 25 Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.2 W Tj Junction Temperature 150

S8050W TRANSISTOR (NPN) FEATURES SOT-323 Complimentary to S8550 W Collector Current IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Diss

SS8050W NPN Transistors Features 3 High Collector Current Complementary to SS8550W 2 1.Base 2.Emitter 3.Collector 1 Simplified outline(SOT-323) Absolute Maximum Ratings Ta = 25 Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A PC Collector Power Dissip

SUNROC 8050C TRANSISTOR(NPN) MAXIMUM RATINGS(Ta=25 unless otherwise noted) 1. EMITTER Symbol Parameter Value Units Collector-Base Voltage 2. BASE VCBO 40 V Collector-Emitter Voltage VCEO 25 V 3. COLLECTOR Emitter-Base Voltage VEBO 5 V Collector Current IC 0.5 A Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Storag Temperature -55 150

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R UMW S8050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current IC=0.5A 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC C

R UMW UMW SS8050 SOT-23 Plastic-Encapsulate Transistors SOT-23 SS8050 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING Y1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Conti

RoHS MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 1. Complement to MMPT8550LT1 1.BASE Collector Current Ic=500mA 2.EMITTER o 2.4 Collector Dissipation Pc=225mW(Tc=25 C) 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Volta

MMBT8050C/D(1.5A) Features For switching and amplifier applications Especially suitable for AF-Driver stages and low power output stages Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation PD 350 mW

S8050 General Purpose Transistors NPN Silicon Package outline Features High current capacity in compact package IC = 0.5A. SOT-23 Epitaxial planar type Pb-Free package is available Suffix "-H" indicates Halogen free parts, ex. S8050-H. (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.047 (1.20) 0.013 (0.32) 0.108 (2.75) Mechanical data 0.083 (2.10) Epoxy UL94-V0 r

SS8050 General Purpose Transistors NPN Silicon Features Package outline High current capacity in compact package IC = 1.5A. Epitaxial planar type SOT-23 Pb-Free package is available Suffix "-H" indicates Halogen free parts, ex. SS8050-H. (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.047 (1.20) 0.013 (0.32) 0.108 (2.75) Mechanical data 0.083 (2.10) Epoxy UL94-V0 r

S8050 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features Complimentary to S8550 Collector Current IC=0.5A Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameter Value Symbol Units 1. BASE 40 VCBO Collector-Base Voltage V 2. EMITTER 25 VCEO Collector-Emitter Voltage V 3. COLLECTOR VEBO Emit

SS8050 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS Features SOT-23 High Collector Current Complementary to SS8550 Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO 1. BASE VCEO Collector-Emitter Voltage 25 V 2. EMITTER 3. COLLECTOR VEBO Emitter-Ba

M8050 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features Complimentary to M8550 Collector Current IC=0.8A Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameter Value Symbol Units 1. BASE 40 VCBO Collector-Base Voltage V 2. EMITTER 25 VCEO Collector-Emitter Voltage V 3. COLLECTOR VEBO Emit

S8050 General Purpose Transistors NPN Silicon FEATURES Complimentary to S8550 SOT-23 MARKING J3Y MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO VCE Collector-Emitter Voltage 25 V O V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power Dissipation 300 mW C R Thermal Resistance F

SS8050 General Purpose Transistors NPN Silicon FEATURES Complimentary to SS8550 SOT-23 MARKING Y1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO VCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBO I Collector Current 1.5 A C P Collector Power Dissipation 300 mW C R Thermal Resistance F

NPN SMD Transistors Formosa MS SS8050 General Purpose Transistors NPN Silicon Package outline SOT-23 Features High current capacity in compact package IC = 1.5A. Epitaxial planar type Pb-Free package is available Suffix "-H" indicates Halogen free parts, ex. SS8050-H. (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.047 (1.20) 0.013 (0.32) 0.108 (2.75) Mechanical data

S8050 HD-ST0.4 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Complimentary to S8550 Collector Current IC=0.5A Marking J3Y Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V V Collector-Emitter Voltage 25 V CEO C V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power Dissipation 300 mW

SS8050 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Complimentary to SS8550 Collector Current IC=1.5A Marking Y1 Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V V Collector-Emitter Voltage 25 V CEO C V Emitter-Base Voltage 5 V EBO I Collector Current C 1.5 A P Collector Power Dissipation 300 mW C B E

S8050 NPN Silicon General Purpose Transistor TO-92 FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550 1.25 0.2 Collector Current IC = 0.5 A 1 2 3 2.54 0.1 1 Emitter 2 Base 3 Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25 C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 25 V Emitt

SS8050 Silicon Epitaxial Planar Transistor FEATURES Collector Current.(I = 1.5A C Complementary To SS8550. Collector Power Dissipation P =2W(T =25 ) C C APPLICATIONS High Collector Current. TO-92 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Ratings Units Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 25

S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current IC=0.5A 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector

SS8 050 SOT-23 TRANSISTOR(NPN) FEATURES 1. BASE High Collector Current 2. EMITTER Complementary to SS8550 3. COLLECTOR MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector

www.msksemi.com SS8050-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Complimentary to SS8550-MS 1. BASE MARKING Y1 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector

www.msksemi.com S8050-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Complimentary to S8550-MS Collector Current IC=0.5A 1. BASE 2. EMITTER MARKING J3Y SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Ba

SS8050 PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES Collector Current IC = 1.5A C E B MECHANICAL DATA Available in SOT-23, SOT-323, TO-92 Package C Solderability MIL-STD-202, Method 208 E Full RoHS Compliance B E B C ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODE SS8050 - -T3 SOT-23 Tape Reel Y1 SS8050 - -

MMBT8050 NPN Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the PNP Transistor MMBT8550 is Recommended. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40 V CBO Collector Emitter Voltage V

MMBT8050-1.5A NPN Transistor Features SOT-23 For Switching and AF Amplifer Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code MMBT8050C-1.5A X1 MMBT8050D-1.5A Y1 1.Base 2. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40

S8050 S8050 SOT-23 NPN TRANSISTOR 3 FEATURES Complimentary to S8550 Collector Current IC=0.5A 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 40 V 2.EMITTER Collector Emitter Voltage VCEO 25 V 3.COLLECTOR Emitter Base Voltage VEBO 5 V 500 mA Collector Current Continuous IC mW Collect

SS8050 SS8050 SOT-23 NPN TRANSISTOR 3 FEATURES Complimentary to SS8550 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 40 V 2.EMITTER Collector Emitter Voltage VCEO 25 V 3.COLLECTOR Emitter Base Voltage VEBO 5 V 1.5 A Collector Current Continuous IC mW Collector Power Dissipation PC 300

S8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S8550 ; Complementary to S8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

Jingdao Microelectronics co.LTD SS8050 SS8050 SOT-23 NPN TRANSISTOR 3 FEATURES Complimentary to SS8550 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 40 V 2.EMITTER Collector Emitter Voltage VCEO 25 V 3.COLLECTOR Emitter Base Voltage VEBO 5 V

Jingdao Microelectronics co.LTD S8050 S8050 SOT-23 NPN TRANSISTOR 3 FEATURES Complimentary to S8550 Collector Current IC=0.5A 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 40 V 2.EMITTER Collector Emitter Voltage VCEO 25 V 3.COLLECTOR Emi

SS8 050 SOT-23 TRANSISTOR(NPN) FEATURES 1. BASE High Collector Current 2. EMITTER Complementary to SS8550 3. COLLECTOR MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector

S8 050 TRANSISTOR(NPN) SOT-23 FEATURES Complementary to S8550 1. BASE Collector Current IC=0.5A 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector

SS8050W SS8050W TRANSISTOR (NPN) FEATURES Complimentary to SS8550W MARKING Y1 SOT 323 3. COLLECTOR 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0

PXT8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation Ptot 625

Integrated in OVP&OCP products provider S8050 TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current IC=0.8A 1 BASE 2 EMITTER 3 COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collecto

Integrated in OVP&OCP products provider SS8050 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Vol

S8050 SOT-23 NPN Transistors 3 2 1.Base 2.Emitter 1 3.Collector Features Collector Current IC=0.5A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 0.5 A Collector Dissipation PC 0.3 W Junction Tempe

SS8050 SOT-23 NPN Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector Collector Current IC=1.5A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 1.5 A Collector Dissipation PC 0.3 W Junction Tempera

SS8050 TRANSISTOR (NPN) SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO VCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBO I Collector Current 1.5 A C P Collector Power Dissipation 250 mW C R Therm

S8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S8550 ; Complementary to S8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

SS8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features SS8550 ; Complementary to SS8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

S8050 S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 SOT-23 Collector Current IC=0.5A 1 BASE 2 EMITTER MARKING J3Y 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collecto

PXT8050 PXT8050 PXT8050 PXT8050 TRANSISTOR (NPN) SOT-89 FEATURES Compliment to PXT8550 1. BASE MARKING Y1 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBO I Collector Current -Continuous 1.5 A C P Collector Power dissipat

SS8050 SS8050 TRANSISTOR (NPN) SS8050 FEATURES Complimentary to SS8550 SOT-23 1 BASE MARKING Y1 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0

SS8050W SS8050W SS8050W SS8050W TRANSISTOR(NPN) SS8 0 50 W SOT 323 3 FEATURES Complimentary to SS8550W 1. BASE 1 2. EMITTER 2 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Co

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SEB T8050 EPITAXIAL PLANAR PNP TRANSISTOR Features Complementary to SEBT8050 Applications HIGH CURRENT APPLICATION Construction Maximum Ratings (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC mA

RoHS RoHS COMPLIANT COMPLIANT S8050-L THRU S8050-H NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking S8050-L J3Y L S8050-H J3Y Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Coll

RoHS COMPLIANT SS8050-L THRU SS8050-H NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 9

TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com S8050 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current IC=0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-B

PXT8050 SOT-89-3L PXT8050 TRANSISTOR (NPN) FEATURES Compliment to PXT8550 1. BASE MARKING Y1 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ J

SS8050-1.5A NPN Transistor Features SOT-23 For Switching and AF Amplifier Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code Y1 1.Base 2. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40 V CBO Collector Emitter Voltage V 25 V CEO

S8050 S8050 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S8550 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking J3Y Maximum Ratings & Thermal Characteristics TA = 25 C unle

SS8050 SS8050 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to SS8550 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking Y1 Maximum Ratings & Thermal Characteristics TA = 25 C un

S8050 TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current IC=0.5A 1 BASE 2 EMITTER 3 COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector

S8050T TRANSISTOR (NPN) SOT-523 FEATURES Complimentary to S8550T 1. BASE Collector Current IC=0.5A 2. EMITTER 3. COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Diss

GUANGDONG FENGHUA SEMICONDUCTOR TECHNOLOGY CO.,LTD S8050 10 NPN Transistor NO.10,2nd Nanxiang Road, Guangzhou Science Park,Guangzhou City,Guangdong Province,China. Applications . General purpose application switching

FHT8050-ME NPN Transistor DESCRIPTIONS SOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Additiona

FHT8050 APPROVAL SHEET FHT8050 CUSTOMER NAME PRODUCT NAME SOT-23 CUSTOMER PART NAME FENGHUA PART NAME FHT8050Y-E DATE 2008 10 21 CUSTOMER MANUFACTURER APPROVAL APPROVAL DESIGNER CHECKER APPROVER DESIGNER CHECKER AUTHORITY /

FHTA8050-ME NPN Transistor DESCRIPTIONS SOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Addition

FHTL8050-ME NPN Transistor DESCRIPTIONS SOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONS General purpose application,switching. PIN ASSIGNMENT 1 BASE 2 EMITTER 3 COLLECTOR Equivalent Circuit Name rule Name Addition

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD SS8050 FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to SS8550 SS8550 (Ta=25 ) CHARACTERISTIC Symbol Rating Unit Collector-Base Voltage VCB

S8050 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 25Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=25V. Collector current IC=0.5A. ansition frequency fT>150MHz @ Tr IC=20mAdc, VCE=6Vdc, f=30MHz. In compliance with EU RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Soldera

SS8050 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 25Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=25V. Collector current IC=1.5A. ansition frequency fT>100MHz @ Tr IC=50mAdc, VCE=10Vdc, f=30MHz. In compliance with EU RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Solde

S8050 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to S8550 Excellent h Linearity FE High Collector Current Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol

PXT8050 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to PXT8550 Surface Mount device SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V 40 V CBO Collect

SS8050 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to SS8550 High Collector Current Surface Mount device SOT-323 MECHANICAL DATA Case SOT-323 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base

NPN S8050 S8050 TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current IC=0.5A 1 BASE 2 EMITTER 3 COLLECTOR MARKING J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Volt

NPN SS8050 SS8050 TRANSISTOR (NPN) SOT-23 FEATURES Complimentary to SS8550 1 BASE 2 EMITTER 3 COLLECTOR MARKING Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Cu

S8050 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector Current IC=0.5A MARKING J3Y MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO SOT-23 V Collector-Emitter Voltage 25 V CEO VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA 1. BASE 2. EMITT

SS8050T23 NPN Transistor ROHS FEATURE NPN Transistor Collector Current IC=1.5A MARKING Y1 SOT-23 Absolute maximum ratings (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj

SS8050 MOT NPN TRANSISTOR NPN NPN High Voltage Transistor SMD SS8050 NPN, BEC Transistor Polarity NPN General Purpose Transistors Transistor pinout BEC SOT-23 Package Marking Code Y1 hFE 100 200, 200 300 Ldeal for Medium Power Amplification and Switching Inner circuit

MMBTSS8050 NPN Silicon General Purpose Transistors Features SOT23 High current capacity in compact package IC = 1.5A. Epitaxial planar type Pb-Free package is available Mechanical data Epoxy UL94-V0 rated flame retardant (B) (C) Case Molded plastic, SOT-23 (A) Terminals Solder plated, solderable per MIL-STD-750, Method 2026 0.063 (1.60) 0.027 (0.67)

S8050 Features Complimentary to S8550 Collector Current IC=0.5A SOT-23 Marking Code J3Y A Dim Min Max C A 0.37 0.51 B C B 1.20 1.40 C 2.30 2.50 TOP VIEW B E D 0.89 1.03 D E G E 0.45 0.60 G 1.78 2.05 H H 2.80 3.00 J MAXIMUM RATINGS (Ta=25 unless otherwise noted) 0.013 0.10 K K 0.903 1.10 Symbol Parameter

SS8050 Features Complimentary to SS8550 Collector Current IC=1.5A SOT-23 A Marking Code Y 1 Dim Min Max C A 0.37 0.51 B C B 1.20 1.40 C 2.30 2.50 TOP VIEW B E D 0.89 1.03 D E G E 0.45 0.60 G 1.78 2.05 H H 2.80 3.00 J 0.013 0.10 K MAXIMUM RATINGS (Ta=25 unless otherwise noted) K 0.903 1.10 J L 0.45 0.61

HMBT8050 NPN-TRANSISTOR NPN, 8050 NPN NPN Plastic-Encapsulate Transistors SMD HS8050, HS8050A HM8050, HMBT8050 High breakdown voltage Low collector-emitter saturation voltage HSS8050, HMC6802 Complementary to HMBT8550 Transistor Polarity NPN

Jiangsu Weida Semiconductor Co., Ltd. S8050 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit VCEO Collector-Emitter Voltage 25 Vdc VCBO Collector-Base Voltage 40 Vdc VEBO Emitter-Base VOltage 5.0 Vdc Collector Current IC 500 mAdc PD Total Device Dissipation T =25 C 0.625 W A Junction Te

Jiangsu Weida Semiconductor Co., Ltd. SS8050 NPN General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR MAXIMUM RATINGS(TA=25 C unless otherwise noted) Rating Symbol Value Unit VCBO 40 Collector-Base Voltage V Collector-Emitter Voltage VCEO 25 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous IC A 1.5 Total Device Dissipation