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2N3055
  2N3055
  2N3055
 
2N3055
  2N3055
  2N3055
 
2N3055
  2N3055
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2N3055 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N3055 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N3055

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 117

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 70

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 15

Maksimalna temperatura (Tj), °C: 200

Transition frequency (ft), MHz: 0.2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N3055 transistor: TO3

2N3055 Equivalent Transistors - Cross-Reference Search

2N3055 PDF doc:

1.1. 2n3055.pdf Size:422K _rca

2N3055
2N3055
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1.2. mj2955-2n3055.pdf Size:130K _motorola

2N3055
2N3055
Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20–70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS • Excellent Safe Operating Area COMPLEMENTARY SILICON 60 VOLTS MAXIMUM RATINGS 115 WATTS IIIIIIIIIIIII IIIII IIIII III Rating Symbol Value Unit IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Collector–Emitter Voltage VCEO 60 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Collector–Emitter Voltage VCER 70 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Collector–Base Voltage VCB 100 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Emitter–Base Voltage VEB 7 Vdc IIIIIIIIIIIIIIIIIIIIIII IIIII III IIIIIIIII

1.3. 2n3055_mj2955.pdf Size:179K _motorola

2N3055
2N3055
Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20–70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS • Excellent Safe Operating Area COMPLEMENTARY IIIIIIIIIIIII IIIII IIIII III SILICON 60 VOLTS IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III MAXIMUM RATINGS 115 WATTS IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III IIIII III Rating Symbol Value Unit IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III IIIII III IIIII III Collector–Emitter Voltage VCEO 60 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III III

1.4. 2n3055a_mj2955a_mj15015_mj15016.pdf Size:235K _motorola

2N3055
2N3055
Order this document MOTOROLA by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon 2N3055A High-Power Transistors * MJ15015 . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc–to–dc converters, inverters, or MJ2955A for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955. PNP • Current–Gain — Bandwidth–Product @ IC = 1.0 Adc MJ15016* fT = 0.8 MHz (Min) – NPN IIIIIIIIIIIIIIIIIIIIIII = 2.2 MHz (Min) – PNP *Motorola Preferred Device • Safe Operating Area — Rated to 60 V and 120 V, Respectively IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII 15 AMPERE IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII *MAXIMUM RATINGS COMPLEMENTARY IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII 2N3055A MJ15015 SILI

1.5. 2n3055.pdf Size:130K _motorola

2N3055
2N3055
Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20–70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS • Excellent Safe Operating Area COMPLEMENTARY SILICON 60 VOLTS MAXIMUM RATINGS 115 WATTS IIIIIIIIIIIII IIIII IIIII III Rating Symbol Value Unit IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Collector–Emitter Voltage VCEO 60 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Collector–Emitter Voltage VCER 70 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Collector–Base Voltage VCB 100 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III Emitter–Base Voltage VEB 7 Vdc IIIIIIIIIIIIIIIIIIIIIII IIIII III IIIIIIIII

1.6. 2n3055_mj2955_2.pdf Size:90K _st

2N3055
2N3055
2N3055 MJ2955 Complementary power transistors Features ¦ Low collector-emitter saturation voltage ¦ Complementary NPN - PNP transistors Applications ¦ General purpose ¦ Audio Amplifier 1 2 Description TO-3 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2N3055 2N3055 TO-3 tray MJ2955 MJ2955 January 2008 Rev 7 1/7 . www.st.com 7 Absolute maximun rating 2N3055 MJ2955 1 Absolute maximun rating Table 2. Absolute maximum rating Symbol Parameter Value Unit NPN 2N3055 PNP MJ2955 VCBO Collector-emitter voltage (IE = 0) 100 V VCER Collector-emitter voltage (RBE = 100 ?) 70 V VCEO Collector-emitter voltage (IB = 0) 60 V VEBO Collector-base voltage (IC = 0) 7V IC Collector current 15 A IB Base current 7 A PTOT Total dissipation at Tc ?25°C 115 W Tstg Storage temp

1.7. 2n3055.pdf Size:39K _st

2N3055
2N3055
2N3055 SILICON NPN TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 100 V V Collector-Emitter Voltage (R = 100?)70 V CER BE VCEO Collector-Emitter Voltage (IB = 0) 60 V V Emitter-Base Voltage (I = 0) 7 V EBO C IC Collector Current 15 A IB Base Current 7 A o P Total Dissipation at T ? 25 C 115 W tot c o T Storage Temperature -65 to 200 C stg o T Max. Operating Junction Temperature 200 C j 1/4 October 1995 2N3055 THERMAL DATA o Rthj-ca se Thermal Resistance Junction-case Max 1.5 C/W o ELECTRICAL CHARACTERISTICS (Tcase =25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEV Collector C

1.8. 2n3055_mj2955.pdf Size:70K _onsemi

2N3055
2N3055
2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain - hFE = 20-70 @ IC = 4 Adc • Collector-Emitter Saturation Voltage - 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS • Excellent Safe Operating Area COMPLEMENTARY SILICON • Pb-Free Packages are Available* 60 VOLTS, 115 WATTS MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Emitter Voltage VCER 70 Vdc TO-204AA (TO-3) CASE 1-07 Collector-Base Voltage VCB 100 Vdc STYLE 1 Emitter-Base Voltage VEB 7 Vdc Collector Current - Continuous IC 15 Adc Base Current IB 7 Adc Total Power Dissipation @ TC = 25°C PD 115 W MARKING DIAGRAM Derate Above 25°C 0.657 W/°C Operating and Storage Junction TJ, Tstg - 65 to +200 °C Temperature Range Maximum ratings are those values beyond w

1.9. 2n3055a_mj15015_mj15016.pdf Size:89K _onsemi

2N3055
2N3055
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, inverters, or for inductive loads COMPLEMENTARY SILICON requiring higher safe operating area than the 2N3055. POWER TRANSISTORS Features 60, 120 VOLTS - 115, 180 WATTS • Current-Gain - Bandwidth-Product @ IC = 1.0 Adc fT = 0.8 MHz (Min) - NPN = 2.2 MHz (Min) - PNP • Safe Operating Area - Rated to 60 V and 120 V, Respectively • Pb-Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc TO-204AA (TO-3) 2N3055A 60 CASE 1-07 MJ15015, MJ15016 120 STYLE 1 Collector-Base Voltage VCBO Vdc 2N3055A 100 MJ15015, MJ15016

1.10. 2n3055.pdf Size:16K _utc

2N3055
2N3055
UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V Collector-Emitter Voltage VCEV 70 V Collector Current Ic 15 A Collector Peak Current(1) ICM 15 A Base Current IB 7 A Base Peak Current(1) IBM 15 A Total Dissipation at Ta=25°C Ptot 115 W Storage Temperature TSTG -65 to 200 °C Max. Operating Junction Temperature Tj 200 °C ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Sustaining VCEO(sus) Ic=200mA, IB=0V 60 V Voltage Collector-Emitter Sustaining Voltage VCER(sus) Ic=0.2 A, RBE=

1.11. mj15015-16_2n3055a_mj2955a.pdf Size:193K _mospec

2N3055
2N3055
A A A A

1.12. 2n3055hv.pdf Size:240K _cdil

2N3055
2N3055
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055HV NPN POWER TRANSISTOR TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage ( Open Emitter) V 100 VCEO Collector Emitter Voltage (Open Base) V 100 VEBO Emitter Base Voltage V 7.0 IC Collector Current A 15 IB Base Current A 7.0 Total Power Dissipation up toTc=25?C Ptot W 100 Tj Junction Temperature 200 ?C Tstg Storage Temperature - 65 to +200 ?C THERMAL RESISTANCE Rth(j-c) Junction to Case 1.75 ?C/W ELECTRICAL CHARACTERISTICS (TC=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS Breakdown Voltages VCEO(sus)* IC=200mA, IB=0 100 V VCBO IC=1mA, IE= 0 100 V VEBO IE=1mA, IC =0 7 V ICEX VCE=100V, VBE=(off)=1.5V Collector Cut off Current 1.0 mA ICEX Tc=150?C VCE=100V, VBE=(off)=1.5V 5.0 ICEO VCE=30V, IB=0 Collect

1.13. 2n3055_mj2955.pdf Size:330K _cdil

2N3055
2N3055
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN SILICON PLANAR POWER TRANSISTORS MJ2955 PNP TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITS VALUE Collector Base Voltage VCBO V 100 Collector Emitter Voltage VCEO V 60 Collector Emitter Voltage(RBE=100?) VCER V 70 Emitter Base Voltage VEBO 7 V Collector Current Continuous IC 15 A Base Current IB 7 A Power Dissipation @ Tc=25?C Ptot 115 W Derate Above 25?C 0.657 W/?C Operating And Storage Junction Tj, Tstg - 65 to +200 ?C Temperature Range THERMAL RESISTANCE Rth(j-c) Junction to Case 1.52 ?C/W ELECTRICAL CHARACTERISTICS (TC=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS Collector Emitter Sustaing Voltage VCEO(sus)*IC=200mA, IB=0 60 V Collector Emitter Sustaing Voltage VCER(sus)* IC=200mA, RBE=100? 70 V Collector Cut Off Current ICEX VCE=100V, VB

1.14. 2n3055h.pdf Size:31K _inchange_semiconductor

2N3055
2N3055
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055H DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 70 V CER VCEO Collector-Emitter Voltage 100 V V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 15 A C IB Base Current 7 A P Collector Power Dissipation@T =25? 115 W C C T Junction Temperature 200 ? J Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.52 ?/W isc Website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055H ELECTRICAL CHARA

1.15. 2n3055.pdf Size:107K _inchange_semiconductor

2N3055
2N3055
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955 APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IBB Base Current 7 A PC Collector Power Dissipation@TC=25? 115 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.52 ?/W Rth j-c isc Website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N3055 ELECTRI

1.16. 2n3055a.pdf Size:33K _inchange_semiconductor

2N3055
2N3055
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055A DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A APPLICATIONS ·Designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers,DC-DC converters, inverters, or for inductive loads. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CEV V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 15 A C I Base Current 7 A B P Collector Power Dissipation@T =25? 115 W C C T Junction Temperature 200 ? J Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal

See also transistors datasheet: 2N3053 , 2N3053A , 2N3053L , 2N3053S , 2N3053SM , 2N3054 , 2N3054A , 2N3054S , C103 , 2N3055-1 , 2N3055-10 , 2N3055-2 , 2N3055-3 , 2N3055-4 , 2N3055-5 , 2N3055-6 , 2N3055-7 .

Keywords

 2N3055 Datasheet  2N3055 Datenblatt  2N3055 RoHS  2N3055 Distributor
 2N3055 Application Notes  2N3055 Component  2N3055 Circuit  2N3055 Schematic
 2N3055 Equivalent  2N3055 Cross Reference  2N3055 Data Sheet  2N3055 Fiche Technique

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